CN206471348U - A kind of high intensity and the full spectrum SMD type LED/light source of high radiating - Google Patents
A kind of high intensity and the full spectrum SMD type LED/light source of high radiating Download PDFInfo
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- CN206471348U CN206471348U CN201621404318.7U CN201621404318U CN206471348U CN 206471348 U CN206471348 U CN 206471348U CN 201621404318 U CN201621404318 U CN 201621404318U CN 206471348 U CN206471348 U CN 206471348U
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- silicon rubber
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- packaging silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The utility model is related to the full spectrum SMD type LED/light source of a kind of high intensity and high radiating, including SMD supports, blue-light LED chip, first packaging silicon rubber layer, full-spectrum LED phosphor powder layer and the second packaging silicon rubber layer, SMD supports include the aluminium base containing circuit layer and plastic cement seat, plastic cement seat is fixed on aluminium base by embedded division, blue-light LED chip is fixed on by crystal-bonding adhesive in the encapsulation groove of plastic cement seat, first packaging silicon rubber layer is coated on blue-light LED chip, full-spectrum LED phosphor powder layer is coated on the first packaging silicon rubber layer, second packaging silicon rubber layer is coated on full-spectrum LED phosphor powder layer.Structural strength of the present utility model is high, good heat dissipation, and spectrum continuity is good, colour rendering is high, light efficiency is good, and the lighting demand of different field is met well, and fluorescent material consumption is low, heat damage is difficult, light decay is few, light emission rate is high, light guide is uniform, soft, and good illumination effect, service life is long.
Description
Technical field
The utility model is related to LED/light source technical field, the full spectrum SMD type of specifically a kind of high intensity and high radiating
LED/light source.
Background technology
Traditional LED/light source can only accomplish the spectroscopic data specified, and fractional object is fond of women under traditional LED illumination to be present
Certain distortion phenomenon；And traditional LED often can not meet some printing houses, the factory that dyes cloth, also have plant growth factory
Demand.Traditional LED/light source also haves the shortcomings that intensity difference, thermal diffusivity be not good.
Utility model content
In order to overcome the defect of above-mentioned prior art, technical problem to be solved in the utility model is to provide a kind of high-strength
Degree and the full spectrum SMD type LED/light source of high radiating.
In order to solve the above-mentioned technical problem, the technical solution adopted in the utility model is：
A kind of high intensity and the full spectrum SMD type LED/light source of high radiating, including SMD supports, blue-light LED chip, the first envelope
Fill layer of silica gel, full-spectrum LED phosphor powder layer and the second packaging silicon rubber layer；
The SMD supports include the aluminium base containing circuit layer, and the top surface of aluminium base is attached with plastic cement seat, the plastic cement seat
Encapsulation groove of the opening away from aluminium base is offered, the positive pole and negative pole of the circuit layer of the aluminium base are exposed to the groove of encapsulation groove
Multiple through holes are offered on bottom, the aluminium base, described in the bottom of the plastic cement seat is provided with corresponding to the through hole and is embedded in
The embedded division of through hole, the plastic cement seat is fixed on the aluminium base by embedded division；
The blue-light LED chip is fixed in encapsulation groove by crystal-bonding adhesive, and the positive pole gold thread of blue-light LED chip is welded on electricity
On the positive pole of road floor, the negative pole gold thread of blue-light LED chip is welded on the negative pole of circuit layer, the first packaging silicon rubber layer cladding
On blue-light LED chip, the full-spectrum LED phosphor powder layer is coated on the first packaging silicon rubber layer, second packaging silicon rubber
Layer is coated on full-spectrum LED phosphor powder layer.
Wherein, it is coated with reflecting layer on the cell wall of the encapsulation groove.
Wherein, the outer surface of the second packaging silicon rubber layer is frosting.
Wherein, first packaging silicon rubber layer is in segment shape, the central angle of the arc surface of the first packaging silicon rubber layer for 120~
140 degree, the full-spectrum LED phosphor powder layer is evenly coated on the first packaging silicon rubber layer, and the second packaging silicon rubber layer is uniform
It is coated on full-spectrum LED phosphor powder layer, the thickness of the second packaging silicon rubber layer is 1~5mm.
The beneficial effects of the utility model are：
(1) by opening up through hole on aluminium base, while being molded embedded division on plastic cement seat, embedded division is made to be embedded into aluminium base
In the through hole of plate, on the one hand embedded division can realize the fixation of plastic cement seat and both aluminium bases, on the other hand, in embedded aluminium base
Embedded division can also strengthen the bulk strength of aluminium base, it is to avoid aluminium base flexural deformation, thus need not using aluminium base be embedded in modeling
The fixed form of rubber base, area of dissipation is big, takes full advantage of the heat dispersion of aluminium base, improve the overall structural strength of product and
Radiating effect.
(2) coordinate by using blue-light LED chip and full-spectrum LED phosphor powder layer, spectrum continuity can be obtained good, aobvious
Color is high, light efficiency is good high intensity and the full spectrum SMD type LED/light source of high radiating, meet the illumination of different field well
Demand；Full-spectrum LED phosphor powder layer is arranged between the first packaging silicon rubber layer and the second packaging silicon rubber layer, with being set directly at indigo plant
In light LED chip or compared with packaging silicon rubber is mixed and made into after fluorescent glue again mode for dispensing glue, it can both greatly reduce fluorescent material
Usage amount, reduce production cost, and it is possible to prevente effectively from blue-light LED chip work produce heat directly or closely pass
Lead fluorescent material and cause fluorescent material to be damaged, so as to reduce the optical attenuation of light source, improve the light emission rate of product and use the longevity
Life.
Brief description of the drawings
Fig. 1 show the high intensity of the utility model embodiment and the structure of the full spectrum SMD type LED/light source of high radiating is shown
It is intended to.
Label declaration：
1-SMD supports；2- blue-light LED chips；The packaging silicon rubbers of 3- first layer；
4- full-spectrum LED phosphor powder layers；The packaging silicon rubbers of 5- second layer；6- crystal-bonding adhesives；10- aluminium bases；
11- plastic cement seat；12- encapsulates groove；13- through holes；14- embedded divisions；20- positive pole gold threads；
21- negative pole gold threads.
Embodiment
To describe technology contents of the present utility model, the objects and the effects in detail, below in conjunction with embodiment and match somebody with somebody
Accompanying drawing is closed to be explained.
It refer to shown in Fig. 1, the full spectrum SMD type LED/light source of high intensity of the present utility model and high radiating, including SMD
Support 1, blue-light LED chip 2, the first packaging silicon rubber layer 3, the packaging silicon rubber of full-spectrum LED phosphor powder layer 4 and second layer 5；
The SMD supports 1 include the aluminium base 10 containing circuit layer, and the top surface of aluminium base 10 is attached with plastic cement seat 11, institute
State plastic cement seat 11 and offer encapsulation groove 12 of the opening away from aluminium base 10, the positive pole and negative pole of the circuit layer of the aluminium base 10 are naked
It is exposed on the bottom land of encapsulation groove 12, the aluminium base 10 and offers multiple through holes 13, the bottom of the plastic cement seat 11 corresponds to institute
State through hole 13 and be provided with the embedded division 14 for being embedded in the through hole 13, the plastic cement seat 11 is fixed on the aluminium by embedded division 14
On substrate 10；
The blue-light LED chip 2 is fixed in encapsulation groove 12 by crystal-bonding adhesive 6, the positive pole gold thread 20 of blue-light LED chip 2
It is welded on the positive pole of circuit layer, the negative pole gold thread 21 of blue-light LED chip 2 is welded on the negative pole of circuit layer, first envelope
Dress layer of silica gel 3 is coated on blue-light LED chip 2, and the full-spectrum LED phosphor powder layer 4 is coated on the first packaging silicon rubber layer 3,
The second packaging silicon rubber layer 5 is coated on full-spectrum LED phosphor powder layer 4.
In the above-described embodiments, the full-spectrum LED fluorescent material that full-spectrum LED phosphor powder layer 4 is used is existing material, tool
Body can using the full-spectrum LED fluorescent material disclosed in Patent No. CN104263359A, accordingly, blue-light LED chip 2 it is specific
The record that wavelength can refer to embodiment 1 to the embodiment 4 of the patent is arranged in pairs or groups, so as to obtain that spectrum continuity is good, colour rendering
The good high intensity of high, light efficiency and the full spectrum SMD type LED/light source of high radiating.
High intensity of the present utility model and the full spectrum SMD type LED/light source of high radiating, substantially can refer to following technological process
Production is obtained：
The SMD supports 1 for having assembled aluminium base 10 and plastic cement seat 11 are put into automatic die bond equipment, die bond is set automatically
The standby bottom land in encapsulation groove 12 carries out a point crystal-bonding adhesive 6 positive pole and negative pole of coating circuit layer (crystal-bonding adhesive not), then by blue-ray LED
Chip 2 is solid to having put in the encapsulation groove 12 of crystal-bonding adhesive 6 by automatic die bond equipment, and being put into baking box after completion die bond operation sets
Standby interior carry out baking-curing；
Solidification complete and by inspection after, the positive pole gold thread 20 of blue-light LED chip 2 is welded to by circuit by bonding equipment
On the positive pole of layer, the negative pole gold thread 21 of blue-light LED chip 2 is welded on the positive pole of circuit layer；
After the completion of bonding wire, packaging silicon rubber is coated on blue-light LED chip 2 by dispensing operation and forms the first packaging silicon rubber
Layer 3, forms full-spectrum LED phosphor powder layer 4 on the first packaging silicon rubber layer 3 by the uniform spreading of full-spectrum LED fluorescent material, then dries
Roasting solidification；
Packaging silicon rubber is coated on full-spectrum LED phosphor powder layer 4 by dispensing operation and forms the second packaging silicon rubber layer 5,
Then baking-curing；
Go out after baking and carry out finished product detection, packaging and storage.
Technological process：
Die bond --- baking --- bonding wire --- second point of first time dispensing, spreading fluorescent material --- baking ---
Glue --- baking --- spectrophotometric test --- detection storage.
It was found from foregoing description, the beneficial effects of the utility model are：
(1) by opening up through hole on aluminium base, while being molded embedded division on plastic cement seat, embedded division is made to be embedded into aluminium base
In the through hole of plate, on the one hand embedded division can realize the fixation of plastic cement seat and both aluminium bases, on the other hand, in embedded aluminium base
Embedded division can also strengthen the bulk strength of aluminium base, it is to avoid aluminium base flexural deformation, thus need not using aluminium base be embedded in modeling
The fixed form of rubber base, area of dissipation is big, takes full advantage of the heat dispersion of aluminium base, improve the overall structural strength of product and
Radiating effect.
(2) coordinate by using blue-light LED chip and full-spectrum LED phosphor powder layer, spectrum continuity can be obtained good, aobvious
Color is high, light efficiency is good high intensity and the full spectrum SMD type LED/light source of high radiating, meet the illumination of different field well
Demand；Full-spectrum LED phosphor powder layer is arranged between the first packaging silicon rubber layer and the second packaging silicon rubber layer, with being set directly at indigo plant
In light LED chip or compared with packaging silicon rubber is mixed and made into after fluorescent glue again mode for dispensing glue, it can both greatly reduce fluorescent material
Usage amount, reduce production cost, and it is possible to prevente effectively from blue-light LED chip work produce heat directly or closely pass
Lead fluorescent material and cause fluorescent material to be damaged, so as to reduce the optical attenuation of light source, improve the light emission rate of product and use the longevity
Life.
Further, it is coated with reflecting layer on the cell wall of the encapsulation groove 12.
It was found from foregoing description, the beneficial effects of the utility model are：By coating minute surface on the cell wall of encapsulation groove
Coating, can greatly improve the light emission rate of product, reduce luminous energy and waste.
Further, the outer surface of the second packaging silicon rubber layer 5 is frosting.
It was found from foregoing description, the beneficial effects of the utility model are：By by the second packaging silicon rubber layer outer surface
Frosting is designed as, the light guide of product can be made more uniform soft, the illuminating effect of product is improved.
Further, the first packaging silicon rubber layer 3 is in segment shape, the central angle of the arc surface of the first packaging silicon rubber layer 3
For 120~140 degree, the full-spectrum LED phosphor powder layer 4 is evenly coated on the first packaging silicon rubber layer 3, the second encapsulation silicon
Glue-line 5 is evenly coated on full-spectrum LED phosphor powder layer 4, and the thickness of the second packaging silicon rubber layer 5 is 1~5mm.
It was found from foregoing description, the beneficial effects of the utility model are：Using said structure design, be conducive to improving and produce
Luminous efficiency, irradiating angle and the heat dispersion of product.
It refer to shown in Fig. 1, embodiment one of the present utility model is：
A kind of high intensity and the full spectrum SMD type LED/light source of high radiating, including SMD supports 1, blue-light LED chip 2, first
Packaging silicon rubber layer 3, the packaging silicon rubber of full-spectrum LED phosphor powder layer 4 and second layer 5；
The SMD supports 1 include the aluminium base 10 containing circuit layer, and the top surface of aluminium base 10 is attached with plastic cement seat 11, institute
State plastic cement seat 11 and offer encapsulation groove 12 of the opening away from aluminium base 10, the positive pole and negative pole of the circuit layer of the aluminium base 10 are naked
It is exposed on the bottom land of encapsulation groove 12, the aluminium base 10 and offers multiple through holes 13, the bottom of the plastic cement seat 11 corresponds to institute
State through hole 13 and be provided with the embedded division 14 for being embedded in the through hole 13, the plastic cement seat 11 is fixed on the aluminium by embedded division 14
On substrate 10；
The blue-light LED chip 2 is fixed in encapsulation groove 12 by crystal-bonding adhesive 6, the positive pole gold thread 20 of blue-light LED chip 2
It is welded on the positive pole of circuit layer, the negative pole gold thread 21 of blue-light LED chip 2 is welded on the negative pole of circuit layer, first envelope
Dress layer of silica gel 3 is coated on blue-light LED chip 2, and the full-spectrum LED phosphor powder layer 4 is coated on the first packaging silicon rubber layer 3,
The second packaging silicon rubber layer 5 is coated on full-spectrum LED phosphor powder layer 4.
Reflecting layer is coated with the cell wall of the encapsulation groove 12.
The outer surface of the second packaging silicon rubber layer 5 is frosting.The first packaging silicon rubber layer 3 is in segment shape, first
The central angle of the arc surface of packaging silicon rubber layer 3 is 120~140 degree, and the full-spectrum LED phosphor powder layer 4 is evenly coated at first
On packaging silicon rubber layer 3, the second packaging silicon rubber layer 5 is evenly coated on full-spectrum LED phosphor powder layer 4, the second packaging silicon rubber
The thickness of layer 5 is 1~5mm.
In summary, the utility model is provided high intensity and the full spectrum SMD type LED/light source of high radiating, overall structure
Intensity is high, good heat dissipation, and spectrum continuity is good, colour rendering is high, light efficiency is good, and the lighting demand of different field is met well, and
And fluorescent material consumption is low, heat damage is difficult, light decay is few, light emission rate is high, light guide is uniform, soft, and good illumination effect is used
Long lifespan.
Embodiment of the present utility model is the foregoing is only, the scope of the claims of the present utility model is not thereby limited, it is every
The equivalents made using the utility model specification and accompanying drawing content, or directly or indirectly it is used in the technology neck of correlation
Domain, is similarly included in scope of patent protection of the present utility model.
Claims (4)
1. a kind of high intensity and the full spectrum SMD type LED/light source of high radiating, it is characterised in that：Including SMD supports, blue-ray LED core
Piece, the first packaging silicon rubber layer, full-spectrum LED phosphor powder layer and the second packaging silicon rubber layer；
The SMD supports include the aluminium base containing circuit layer, and the top surface of aluminium base is attached with plastic cement seat, and the plastic cement seat is opened up
There is encapsulation groove of the opening away from aluminium base, the positive pole and negative pole of the circuit layer of the aluminium base are exposed to the bottom land of encapsulation groove, institute
State and multiple through holes are offered on aluminium base, the bottom of the plastic cement seat is provided with corresponding to the through hole is embedded in the through hole
Embedded division, the plastic cement seat is fixed on the aluminium base by embedded division；
The blue-light LED chip is fixed in encapsulation groove by crystal-bonding adhesive, and the positive pole gold thread of blue-light LED chip is welded on circuit layer
Positive pole on, the negative pole gold thread of blue-light LED chip is welded on the negative pole of circuit layer, and first packaging silicon rubber layer is coated on indigo plant
In light LED chip, the full-spectrum LED phosphor powder layer is coated on the first packaging silicon rubber layer, the second packaging silicon rubber layer bag
Overlay on full-spectrum LED phosphor powder layer.
2. high intensity according to claim 1 and the full spectrum SMD type LED/light source of high radiating, it is characterised in that：The envelope
Reflecting layer is coated with the cell wall of tankage.
3. high intensity according to claim 1 and the full spectrum SMD type LED/light source of high radiating, it is characterised in that：Described
The outer surface of two packaging silicon rubbers layer is frosting.
4. high intensity according to claim 1 and the full spectrum SMD type LED/light source of high radiating, it is characterised in that：Described
One packaging silicon rubber layer is in segment shape, and the central angle of the arc surface of the first packaging silicon rubber layer is 120~140 degree, the full-spectrum LED
Phosphor powder layer is evenly coated on the first packaging silicon rubber layer, and the second packaging silicon rubber layer is evenly coated at full-spectrum LED fluorescence
On bisque, the thickness of the second packaging silicon rubber layer is 1~5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404318.7U CN206471348U (en) | 2016-12-20 | 2016-12-20 | A kind of high intensity and the full spectrum SMD type LED/light source of high radiating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404318.7U CN206471348U (en) | 2016-12-20 | 2016-12-20 | A kind of high intensity and the full spectrum SMD type LED/light source of high radiating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206471348U true CN206471348U (en) | 2017-09-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621404318.7U Expired - Fee Related CN206471348U (en) | 2016-12-20 | 2016-12-20 | A kind of high intensity and the full spectrum SMD type LED/light source of high radiating |
Country Status (1)
| Country | Link |
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| CN (1) | CN206471348U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598070A (en) * | 2018-06-25 | 2018-09-28 | 江苏罗化新材料有限公司 | A kind of chip-scale LED encapsulation structure of dual chip and preparation method thereof |
-
2016
- 2016-12-20 CN CN201621404318.7U patent/CN206471348U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598070A (en) * | 2018-06-25 | 2018-09-28 | 江苏罗化新材料有限公司 | A kind of chip-scale LED encapsulation structure of dual chip and preparation method thereof |
| CN108598070B (en) * | 2018-06-25 | 2023-07-18 | 江苏罗化新材料有限公司 | Dual-chip-level LED packaging structure and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170905 Termination date: 20181220 |
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| CF01 | Termination of patent right due to non-payment of annual fee |