CN206244925U - It is a kind of to prevent the device that graphite crucible is aoxidized and SiC steam is escaped - Google Patents
It is a kind of to prevent the device that graphite crucible is aoxidized and SiC steam is escaped Download PDFInfo
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- CN206244925U CN206244925U CN201621345351.7U CN201621345351U CN206244925U CN 206244925 U CN206244925 U CN 206244925U CN 201621345351 U CN201621345351 U CN 201621345351U CN 206244925 U CN206244925 U CN 206244925U
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- Prior art keywords
- crucible
- insulation layer
- insulation
- sic
- heat
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Abstract
The utility model is related to a kind of device for preventing graphite crucible oxidation and SiC steam from escaping, including：Crucible, closure insulation, side heat-insulation layer, bottom heat-insulation layer, induction coil, primary heater and boron carbide painting apply flitch；Described crucible side, bottom and top measurements of the chest, waist and hips are coated with side heat-insulation layer, bottom heat-insulation layer and closure insulation, and described closure insulation upper end sets fluted；Described primary heater is arranged on position between side heat-insulation layer and bottom heat-insulation layer and crucible；Described boron carbide painting apply flitch are vertically and fixedly arranged at crucible top upper surface；Described crucible inside includes raw material area and seed crystal area.The beneficial effects of the utility model are：Prevent oxygen from corroding crucible and then polluting SiC single crystal, while reducing escaped quantity of the SiC steam by hole.Ensure to improve raw material availability while monocrystalline quality.
Description
Technical field
The utility model is related to a kind of for preventing from existing with the graphite crucible of air contact during growing silicon carbice crystals
Under high temperature be oxidized and growth crystal in introduce impurity structure, be specifically related to one kind prevent graphite crucible aoxidize and
The device of SiC steam effusion, belongs to carborundum crystals manufacture class field.
Background technology
In SiC crystal preparation field, growing method the most ripe is physical vapor transport（PVT）.Crystal growth
The crucible for using uses graphite material, on the one hand when graphite crucible temperature reaches 600 DEG C will by the dioxygen oxidation in air,
There is the possibility that oxygen impurities enter the SiC single crystal in crucible overburden while crucible is corroded, influence grows the pure of monocrystalline
Degree, and corresponding defect is introduced in monocrystalline, reduce the quality of SiC single crystal；On the other hand, graphite material has certain hole
Gap rate, the SiC steam produced during high temperature can be escaped by these holes, reacted to corrode with the insulation layer material of top and protected
Adiabator and the to a certain extent utilization rate of reduction raw material SiC.The boron nitride material good compactness of diamond-type, heat endurance
It is good, it is to isolate well and protection materials.
It is the utility model research therefore, how to provide a kind of device for preventing graphite crucible oxidation and SiC steam from escaping
Purpose.
Utility model content
Prevent graphite crucible from aoxidizing and the effusion of SiC steam to overcome the shortcomings of the existing technology, the utility model offer is a kind of
Device, installs a structure for coating boron nitride additional, it is ensured that protected while growing high-quality SiC crystal by crucible top
Shield crucible simultaneously improves raw material availability.
To solve prior art problem, the technical scheme that the utility model is used is：
It is a kind of to prevent graphite crucible from aoxidizing the device with the effusion of SiC steam, including：Crucible, closure insulation, side heat-insulation layer,
Bottom heat-insulation layer, induction coil, primary heater and boron carbide painting apply flitch；Described crucible side, bottom and top measurements of the chest, waist and hips are coated with side insulation
Layer, bottom heat-insulation layer and closure insulation, described closure insulation upper end set fluted；Described primary heater is arranged on side insulation
Position between layer and bottom heat-insulation layer and crucible；Described boron carbide painting apply flitch are vertically and fixedly arranged at crucible top upper surface, complete
All standing crucible top upper surface；Described crucible inside includes raw material area and seed crystal area.
Further, described boron carbide painting apply flitch select different-thickness as needed.
The beneficial effects of the utility model are：Prevent oxygen from corroding crucible and then polluting SiC single crystal, while reducing SiC
The escaped quantity that steam passes through hole.Ensure to improve raw material availability while monocrystalline quality.
Brief description of the drawings
Fig. 1 is the utility model structural representation.
Wherein：Crucible 1, closure insulation 2, side heat-insulation layer 3, bottom heat-insulation layer 4, induction coil 5, primary heater 6, seed crystal area 7,
Raw material area 8, groove 9, boron carbide painting apply flitch 10.
Specific embodiment
In order that those skilled in the art can more understand technical solutions of the utility model, 1 pair of sheet below in conjunction with the accompanying drawings
Utility model is further analyzed.
As shown in figure 1, a kind of prevent graphite crucible from aoxidizing the device with the effusion of SiC steam, including：Crucible 1, closure insulation
2nd, side heat-insulation layer 3, bottom heat-insulation layer 4, induction coil 5, primary heater 6 and boron carbide painting apply flitch 10；The side of crucible 1, bottom and top measurements of the chest, waist and hips
Side heat-insulation layer 3, bottom heat-insulation layer 4 and closure insulation 2 are coated with, the upper end of closure insulation 2 sets fluted 9；Primary heater 6 is arranged on
Position between side heat-insulation layer 3 and bottom heat-insulation layer 4 and crucible 1；Boron carbide painting apply flitch 10 are vertically and fixedly arranged at the top upper table of crucible 1
Face；Described crucible inside includes raw material area 8 and seed crystal area 7.Wherein the thickness of boron carbide painting apply flitch 10, selects not as needed
Stack pile.
Described device of the present utility model is a kind of stone for being prevented during growing silicon carbice crystals with air contact
Black crucible is oxidized and introduces impurity in the crystal of growth at high temperature, while it is former to reduce SiC steam effusion crucible raising SiC
Expect the material structure of utilization rate.Have certain gap between graphite crucible top and top heat-insulation layer, by thermometric it is empty with
The external world communicates.One layer of boron nitride coating is coated in crucible top to be allowed to and air insulated, can avoid graphite crucible at high temperature
It is oxidized, is introduced into the crystal that oxygen impurities enter into growth；On the other hand, because graphite material consistency is relatively low, the SiC of generation
Steam partly in gap location effusion can reduce the utilization rate of SiC raw materials.The material structure of this Patent design is used in crucible top
Crucible can be protected while ensureing to grow high-quality SiC crystal and improve raw material availability.
Technical scheme provided herein is described in detail above, embodiment used herein is to the application
Principle and implementation method be set forth, the explanation of above example is only intended to help and understands the present processes and its core
Thought is thought；Simultaneously for those of ordinary skill in the art, according to the thought of the application, in specific embodiment and model is applied
Place and will change, in sum, this specification content should not be construed as the limitation to the application.
Claims (2)
- It is 1. a kind of to prevent the device that graphite crucible is aoxidized and SiC steam is escaped, it is characterised in that：Including：Crucible, closure insulation, Side heat-insulation layer, bottom heat-insulation layer, induction coil, primary heater and boron carbide painting apply flitch；Described crucible side, bottom and top measurements of the chest, waist and hips cladding There are side heat-insulation layer, bottom heat-insulation layer and closure insulation, described closure insulation upper end sets fluted；Described primary heater is set The position between side heat-insulation layer and bottom heat-insulation layer and crucible；Described boron carbide painting apply flitch are vertically and fixedly arranged on crucible top Surface, is completely covered crucible top upper surface；Described crucible inside includes raw material area and seed crystal area.
- 2. it is according to claim 1 it is a kind of prevent graphite crucible aoxidize and SiC steam effusion device, it is characterised in that： Described boron carbide painting apply flitch select different-thickness as needed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345351.7U CN206244925U (en) | 2016-12-09 | 2016-12-09 | It is a kind of to prevent the device that graphite crucible is aoxidized and SiC steam is escaped |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345351.7U CN206244925U (en) | 2016-12-09 | 2016-12-09 | It is a kind of to prevent the device that graphite crucible is aoxidized and SiC steam is escaped |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206244925U true CN206244925U (en) | 2017-06-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621345351.7U Expired - Fee Related CN206244925U (en) | 2016-12-09 | 2016-12-09 | It is a kind of to prevent the device that graphite crucible is aoxidized and SiC steam is escaped |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206244925U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
-
2016
- 2016-12-09 CN CN201621345351.7U patent/CN206244925U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170613 Termination date: 20201209 |