CN206225326U - A kind of cleaning device - Google Patents

Abstract

The utility model provides a kind of cleaning device, is suitable to clean the crystal column surface of low-K material, and the cleaning device includes：Cleaning chamber, is adapted to provide for the working environment of a sealing；Whirligig, carries the wafer and drives it to rotate；Gas pipeline, positioned at whirligig top, is suitable to output gas and rinses the crystal column surface, and the gas pipeline moves reciprocatingly along the radial direction of the wafer, and coordinates to rinse all surfaces of the wafer with the whirligig；Exhaust apparatus, is suitable to extract gas and pollution particle in the cleaning chamber.Cleaning device of the present utility model solves the problems, such as that the crystal column surface cleaning of low-K material is unsuitable for liquid wash, while improve cleaning efficiency.

Description

A kind of cleaning device

Technical field

The utility model is related to semiconductor fabrication techniques field, more particularly to a kind of wafer table being suitable to low-K material The cleaning device that face is cleaned.

Background technology

With the development of semiconductor technology, especially 40nm and 28nm stages, in order to obtain lower signal lag and High performance response characteristic, more selection low K (low-k) materials, but low K material densities are poor.For example Gap is larger between M1 (the first metal layer) -- BD (Black Diamond, black diamond) film, its surface molecule structure, in honeycomb Shape, hydrophily is stronger, therefore, product yield can be influenceed when its surface there are some grain defects, cannot but use water or other liquid Body is cleaned.

At present, traditional clean method is mainly using the washer of wet method anion water come cleaning wafer surface, such as Fig. 1 It is shown, it is the structural representation of traditional washer, the cleaning chamber 1 ' of the washer is not sealing, inside sets two pipelines 2 ', wherein one is aqueduct 21 ' for conveying deionized water, another is applied to conveying inert gas such as nitrogen Gas pipeline 22 ', the gas pipeline 22 ' for providing pressure to the deionized water, wherein, aqueduct 21 ' perpendicular to The surface of wafer 4 ' simultaneously moves reciprocatingly, and the end of aqueduct 21 ' is provided only with a nozzle 3 ', and such as Fig. 2 is shown as water-supply-pipe Schematic cross-sectional view of the road 21 ' perpendicular to wafer 4 '.The whirligig 5 ' for carrying wafer 4 ' is additionally provided with cleaning chamber 1 ', clearly The clean bottom of chamber 1 ' is provided with the blowdown apparatus 6 ' for draining-off sewage and pollution particle 7 ', and Fig. 3 show going for the ejection of nozzle 3 ' Trajectory diagram of the ionized water on the surface of wafer 4 '.

But the method for above-mentioned use liquid scrubbing is only used for non-low K materials, and single pipe and single-nozzle washing It is less efficient；Therefore a kind of new efficient cleaning device of design is needed to solve the cleaning problems of low K material surfaces.

Utility model content

The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of cleaning device, is used for Solve the problems, such as that the washer in the prior art with water as cleaning agent is unsuitable for cleaning the crystal column surface of low-K material.

To achieve the above object, the utility model provides a kind of cleaning device, is suitable to carry out the crystal column surface of low-K material Cleaning, the cleaning device includes：Cleaning chamber, is adapted to provide for the working environment of a sealing；Whirligig, carries the wafer And drive it to rotate；Gas pipeline, positioned at whirligig top, is suitable to output gas and rinses the crystal column surface, described Gas pipeline moves reciprocatingly along the radial direction of the wafer, and coordinates to rinse the wafer with the whirligig All surfaces；Exhaust apparatus, is suitable to extract gas and pollution particle in the cleaning chamber.

In an implementation method of the present utility model, the gas pipeline is 30- with the angular range of the crystal column surface 45°。

In an implementation method of the present utility model, the outlet side of the gas pipeline is provided with combination nozzle.

In an implementation method of the present utility model, the combination nozzle includes three nozzles of different directions.

In an implementation method of the present utility model, the inwall of the cleaning chamber is provided with a circle groove, the groove Position correspond to the wafer where horizontal plane.

In an implementation method of the present utility model, the exhaust apparatus be installed on it is described cleaning chamber outside, and with The position of the groove is corresponding.

In an implementation method of the present utility model, the gas pipeline is provided with two.

In an implementation method of the present utility model, the gas is nitrogen.

As described above, cleaning device of the present utility model, has the advantages that：

1st, using the cleaning chamber of closing, and it is evacuated to form negative pressure operation using exhaust apparatus, is strengthened air stream It is dynamic, keep the cleanliness factor of cleaning chamber；

2nd, groove is provided with the cleaning chamber inner wall, to pollute the aggregation of particle, and is arranged in time by exhaust apparatus Remove；

3rd, using double joint gas pipeline, the area of unit interval interior air-flow covering is improved；

4th, double joint gas pipeline connects combination nozzle respectively, and combination nozzle forms three direction air-flows, is subject to particle Three different directions power, with the rotation and the movement of combination nozzle of wafer, make the pollution particle of diverse location be closed by this The effect of power, improves the efficiency for removing pollution particle, so as to lift product yield.

Brief description of the drawings

Fig. 1 is the schematic cross-sectional view of washer structure in the prior art.

Fig. 2 is the schematic cross-sectional view of the pipeline of washer and wafer position in the prior art.

Fig. 3 is the trajectory diagram of the deionized water in crystal column surface of the nozzle ejection of washer in the prior art.

Fig. 4 is the schematic cross-sectional view of the utility model cleaning device structure.

Fig. 5 is the schematic top plan view of the utility model cleaning device structure.

Fig. 6 is the schematic cross-sectional view of gas pipeline and wafer position in the utility model cleaning device.

Fig. 7 is the trajectory diagram of the air-flow in crystal column surface of nozzle ejection in the utility model cleaning device.

Fig. 8 is to pollute the impulse force schematic diagram that particle is subject to all directions air-flow.

The figure of making a concerted effort that Fig. 9 is subject to for pollution particle in Fig. 8.

Component label instructions

1 ' cleaning chamber

2 ' pipelines

21 ' aqueducts

22 ' gas pipelines

3 ' nozzles

4 ' wafers

5 ' whirligigs

6 ' blowdown apparatus

7 ' pollution particles

1 cleaning chamber

2 whirligigs

3 gas pipelines

4 wafers

5 exhaust apparatus

6 combination nozzles

7 grooves

8 pollution particles

α, β angle

F, F1-F3 air flow impulse

Specific embodiment

Implementation method of the present utility model is illustrated by particular specific embodiment below, those skilled in the art can be by this Content disclosed by specification understands other advantages of the present utility model and effect easily.

Refer to Fig. 4 to Fig. 9.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., is only used to Coordinate the content disclosed in specification, so that those skilled in the art understands and reads, be not limited to the utility model Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size Adjustment, in the effect for not influenceing the utility model can be generated and under the purpose to be reached, all should still fall in the utility model In the range of disclosed technology contents are obtained and can covered.Meanwhile, in this specification it is cited as " on ", D score, " left side ", The term on " right side ", " centre " and " one " etc., is merely convenient to understanding for narration, and it is enforceable to be not used to restriction the utility model Scope, being altered or modified for its relativeness is enforceable when the utility model is also considered as under without essence change technology contents Category.

Fig. 4-Fig. 5 is referred to, the utility model provides a kind of cleaning device, is suitable to carry out the surface of wafer 4 of low-K material Cleaning, the cleaning device includes：Cleaning chamber 1, is adapted to provide for the working environment of a sealing；Whirligig 2, carries the crystalline substance Circle 4 simultaneously drives it to rotate；Gas pipeline 3, positioned at the top of the whirligig 2, is suitable to output gas and rinses the table of wafer 4 Face, the gas pipeline 3 moves reciprocatingly along the radial direction of the wafer 4, and coordinates to rinse with the whirligig 2 The all surfaces of the wafer 4；Exhaust apparatus 5, is suitable to extract gas and pollution particle 8 in the cleaning chamber 1.

The cleaning chamber 1 is an environment for sealing, it can be ensured that operation is not by the dirt of outside in cleaning chamber 1 Dye, the flushing on the surface of wafer 4 is only carried out due to cleaning device of the present utility model using gas, is solved and is rushed using deionized water Washing the surface of wafer 4 of low-K material causes wafer 4 to absorb the problem of moisture.

Here gas is inert gas, as an example, the gas is nitrogen.

Cleaning device is evacuated using the exhaust apparatus 5 so that is formed negative pressure in cleaning chamber 1, is facilitated in chamber Gas and pollution particle 8 exclusion and real-time ensuring cleaning chamber 1 in clean environment.

As an example, the gas pipeline 3 is provided with two, relative to the single pipeline of prior art, in the unit interval The area of wafer 4 of air-flow covering is bigger, improves the efficiency of cleaning.

As shown in fig. 6, two gas pipelines 3 are 30-45 ° with the angle α on the surface of the wafer 4, the scope of β. The angular range can control the direction of air-flow and rinse the air flow impulse on wafer 4 surface (in the case where air flow pressure is certain Make to finely tune).

Whirligig 2 counterclockwise or is turned clockwise with certain speed, and two gas pipelines 3 are along the wafer 4 Radial direction move reciprocatingly, and coordinate to rinse all surfaces of the wafer 4 with the whirligig 2.Here, as long as Adjust two reciprocating tracks of the gas pipeline 3, the gas that two gas pipelines 3 are excluded can cover/ Scan the whole surface of the wafer 4.Fig. 7 is referred to, is nozzle sprays in utility model cleaning device air-flow in the table of wafer 4 The trajectory diagram in face.As an example, the outlet side of two gas pipelines 3 is mounted on combining nozzle 6.Relative to prior art Single-nozzle, blowout air-flow covering wafer 4 area it is bigger, be further adapted for adjust air-flow direction, improve cleaning efficiency.

As an example, the combination nozzle 6 includes three nozzles one of different directions, nozzle two and nozzle three are (in figure It is not shown), the angle between the nozzle one, the nozzle two and the three of the nozzle three can be adjusted arbitrarily.Such as Fig. 8 and Tu Shown in 9, the pollution particle 8 is respectively by the air flow impulse that the nozzle one, the nozzle two and the nozzle three spray F1, F2 and F3, finally ensure that the direction of the F that makes a concerted effort of F1, F2 and F3 is directed towards the outside of the wafer 4, namely the combination shape of nozzle 6 Into three air-flows in direction, pollution particle 8 is set to be subject to three different directions power (direction of F is pointed to outside the wafer 4 with joint efforts), As the whirligig 2 drives, the wafer 4 rotates and the gas pipeline 3 drives the movement for combining nozzle 6, makes not Acted on by this F that makes a concerted effort with the pollution particle 8 of position, finally the pollution particle 8 is removed from the surface of wafer 4.

As an example, the inwall of the cleaning chamber 1 is provided with a circle groove 7, the position of the groove 7 is corresponding to described Horizontal plane where wafer 4.

As an example, the exhaust apparatus 5 be installed on it is described cleaning chamber 1 outside, and with the position phase of the groove 7 Correspondence.

Here the groove 7 for setting is beneficial in that, certain centrifugal force, institute can be produced when wafer 4 rotates Stating pollution particle 8 can be thrown to the outside of wafer 4 and be left the surface of wafer 4 in the presence of centrifugal force and air flow impulse, by Horizontal plane where the position of the groove 7 corresponds to the wafer 4, at this moment, the pollution particle 8 can be towards the groove 7 motions, are eventually gathered at groove 7.

It is again because the exhaust apparatus 5 is installed on the outside of the cleaning chamber 1 and relative with the position of the groove 7 Should, the pollution particle 8 is timely excluded the outside of the cleaning chamber 1 by the exhaust apparatus 5 together with gas.

As described above, cleaning chamber of the cleaning device of the present utility model using closing, and taken out using exhaust apparatus Gas strengthens air flow to form negative pressure operation, keeps the cleanliness factor of cleaning chamber；It is provided with recessed in the cleaning chamber inner wall Groove, to pollute the aggregation of particle, and is excluded in time by exhaust apparatus；Using double joint gas pipeline, improve in the unit interval Air-flow covers the area of crystal column surface；Double joint gas pipeline connects combination nozzle respectively, and combination nozzle forms three direction gas Stream, makes particle be subject to three different directions power, as wafer rotates and combine the movement of nozzle, makes the pollution particle of diverse location Be subject to it is same make a concerted effort act on, improve remove pollution particle efficiency, so as to lift product yield.

Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited Type.Any person skilled in the art can all be carried out under without prejudice to spirit and scope of the present utility model to above-described embodiment Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model All equivalent modifications completed under god and technological thought or change, should be covered by claim of the present utility model.

Claims (8)

1. a kind of cleaning device, is suitable to clean the crystal column surface of low-K material, it is characterised in that the cleaning device bag Include：

Cleaning chamber, is adapted to provide for the working environment of a sealing；

Whirligig, carries the wafer and drives it to rotate；

Gas pipeline, positioned at whirligig top, is suitable to output gas and rinses the crystal column surface, the gas pipeline edge The radial direction for the wafer moves reciprocatingly, and coordinates to rinse all surfaces of the wafer with the whirligig；

Exhaust apparatus, is suitable to extract gas and pollution particle in the cleaning chamber.

2. cleaning device according to claim 1, it is characterised in that the angle of the gas pipeline and the crystal column surface Scope is 30-45 °.

3. cleaning device according to claim 1, it is characterised in that the outlet side of the gas pipeline is provided with combination spray Mouth.

4. cleaning device according to claim 3, it is characterised in that the combination nozzle includes three sprays of different directions Mouth.

5. cleaning device according to claim 1, it is characterised in that it is recessed that the inwall of the cleaning chamber is provided with a circle Groove, the position of the groove is corresponding to the horizontal plane where the wafer.

6. cleaning device according to claim 5, it is characterised in that the exhaust apparatus is installed on the cleaning chamber Outside, and it is corresponding with the position of the groove.

7. cleaning device according to claim 1, it is characterised in that the gas pipeline is provided with two.

8. the cleaning device according to claim any one of 1-7, it is characterised in that the gas is nitrogen.