CN110928143A - Wafer workbench cleaning system and cleaning method - Google Patents
Wafer workbench cleaning system and cleaning method Download PDFInfo
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- CN110928143A CN110928143A CN201811094175.8A CN201811094175A CN110928143A CN 110928143 A CN110928143 A CN 110928143A CN 201811094175 A CN201811094175 A CN 201811094175A CN 110928143 A CN110928143 A CN 110928143A
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- wafer
- cleaning
- grinding block
- grinding
- spray head
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Abstract
The invention provides a wafer workbench cleaning system and a cleaning method, wherein the wafer workbench cleaning system comprises: a grinding block and a cleaning liquid spray head; the grinding block is positioned above the wafer workbench and used for grinding the wafer workbench, the grinding surface of the grinding block is parallel to the wafer workbench, and the grinding surface extends to the inside of the grinding block from the grinding surface and comprises at least one grinding block through hole; and the cleaning liquid spray head is positioned in the grinding block through hole, is not in contact with the side wall of the grinding block through hole and is used for spraying cleaning liquid on the wafer workbench. According to the invention, the cleaning effect and the cleaning efficiency of the wafer workbench can be improved through the grinding block and the cleaning liquid spray head; the cleanliness and the flatness of the wafer worktable are improved, so that the product quality is improved; the damage to the wafer worktable is reduced, and the service life of the wafer worktable is prolonged.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuits, and relates to a wafer workbench cleaning system and a wafer workbench cleaning method.
Background
In the field of semiconductor integrated circuits, circuit patterns in semiconductor integrated circuits are usually prepared by using a photolithography process, which has been regarded as the most critical step in the manufacture of integrated circuits, and the circuit patterns need to be used for many times in the whole process, which has a significant influence on the quality of products.
The photolithography process is a complex process, mainly comprising the following steps: firstly, forming a thin film layer to be etched on a substrate, then Coating (Coating) photoresist on the thin film layer to be etched by using a glue spreader, irradiating the photoresist by using a mask plate with a certain pattern through an Exposure machine to expose (expose), then Developing (Developing) the photoresist by using a Developing solution, thereby transferring the pattern in the mask plate to the photoresist to form a photoresist pattern, and finally carrying out an etching (Etch) process on the thin film layer to be etched under the protection of the photoresist pattern, thereby transferring the photoresist pattern to the thin film layer to be etched, and patterning the thin film layer to obtain a circuit pattern.
In the existing semiconductor integrated circuit, before a wafer enters a photoetching machine, unwanted pollutants are often remained on the back surface, and in the process of exposing the wafer, the pollutants can fall off and adhere to the surface of a wafer worktable, so that the cleanliness of the wafer worktable is reduced, and the pollutants can be transferred to the back surface of the next wafer placed on the wafer worktable, so that the pollution range of the wafer is enlarged. The partial pollutants can also reduce the flatness of the wafer worktable, so that the wafer can generate defocusing phenomenon in the exposure process, and the product quality is influenced. The long-term accumulation of this portion of contaminants can also cause damage to the expensive wafer stage, resulting in waste of resources. Therefore, in order to improve the flatness and cleanliness of the wafer worktable, a worker usually adopts a dry mechanical grinding method to remove the contaminants on the surface of the wafer worktable, but the effect of removing the contaminants by the dry mechanical grinding method is poor, and particularly when the area range of the contaminants is large, repeated grinding is sometimes required for many times or manual grinding is sometimes required to achieve a better cleaning effect, and the repeated grinding or manual grinding is adopted for many times, so that the time consumption is long, the cleaning efficiency is reduced, the damage to the wafer worktable is increased, the service life of the wafer worktable is shortened, and the waste of resources is caused.
Therefore, there is a need to provide a novel wafer stage cleaning system and a cleaning method, which are used to solve the above-mentioned problems in the prior art.
Disclosure of Invention
In view of the above-mentioned disadvantages of the prior art, an object of the present invention is to provide a wafer stage cleaning system and a cleaning method thereof, which are used to solve the problems of poor cleaning effect, low cleaning efficiency and shortened service life of the wafer stage during cleaning the wafer stage in the prior art.
To achieve the above and other related objects, the present invention provides a wafer table cleaning system, comprising:
the grinding block is positioned above the wafer workbench and used for grinding the wafer workbench, the grinding surface of the grinding block is parallel to the wafer workbench, and the grinding surface extends towards the inside of the grinding block and comprises at least one grinding block through hole;
and the cleaning liquid spray head is positioned in the grinding block through hole, is in non-contact with the side wall of the grinding block through hole and is used for spraying cleaning liquid on the wafer workbench.
Optionally, the wafer table cleaning system further includes a connecting portion connected to the grinding block, the connecting portion being located above the grinding block and including a connecting portion through hole communicating with the grinding block through hole.
Optionally, the connection mode of the connection part and the grinding block includes one of pin connection, lock catch connection and threaded connection.
Optionally, the projection of the grinding block on the wafer worktable has a circular shape with an outer diameter ranging from 10mm to 35 mm.
Optionally, the range of the minimum distance of the grinding block through hole includes 4mm to 10 mm.
Optionally, the grinding block through hole is located in the center of the grinding block.
Optionally, the cleaning solution nozzle comprises a circular nozzle with an inner diameter ranging from 2mm to 4 mm.
Optionally, the number of the cleaning liquid spray heads is N, wherein N is more than or equal to 2.
Optionally, the longitudinal section of the grinding block through hole includes one of a square shape and a reverse T shape.
Optionally, the operation mode of the grinding block comprises one or a combination of a translation mode and a rotation mode.
Optionally, the cleaning liquid spray head includes one of a fixed cleaning liquid spray head and a telescopic cleaning liquid spray head.
Optionally, the wafer worktable cleaning system further comprises a liquid storage tank connected with the cleaning liquid spray head through a guide pipe, and a control valve is further included between the liquid storage tank and the cleaning liquid spray head.
Optionally, the wafer table cleaning system further comprises a detection mechanism, and the detection mechanism is located above the wafer table.
The invention also provides a wafer workbench cleaning method, which comprises the following steps:
providing the wafer worktable cleaning system with the detection mechanism;
detecting the upper surface of the wafer worktable through the detection mechanism;
grinding the upper surface of the wafer worktable through the grinding block, and cleaning the upper surface of the wafer worktable through the cleaning fluid spray head;
and detecting the upper surface of the wafer workbench after grinding and cleaning through the detection mechanism.
Optionally, the manner of acting the grinding block and the cleaning liquid spray head on the upper surface of the wafer worktable includes one or a combination of before grinding and cleaning after, before cleaning, after grinding and simultaneously grinding and cleaning.
As described above, the wafer stage cleaning system and the wafer stage cleaning method according to the present invention have the following advantageous effects: through grinding block and washing liquid shower nozzle, reach: 1) the cleaning effect and the cleaning efficiency of the wafer workbench are improved; 2) the cleanliness and the flatness of the wafer worktable are improved, so that the product quality is improved; 3) the damage to the wafer worktable is reduced, and the service life of the wafer worktable is prolonged.
Drawings
FIG. 1 is a schematic cross-sectional view of a wafer stage cleaning system according to the present invention.
Fig. 2 is a schematic structural view of the polishing block of fig. 1.
Fig. 3 is a schematic structural view of another grinding block of the present invention.
Fig. 4 is a schematic structural view of the cleaning liquid spray head of the present invention.
FIG. 5 is a schematic process flow diagram of the wafer stage cleaning method of the present invention.
FIG. 6 is a schematic view showing the operation of the wafer cleaning stage according to the present invention.
Description of the element reference numerals
100 wafer workbench
101 contamination
200 wafer workstation cleaning system
210 grinding block
211 grinding block through hole
220 cleaning liquid spray head
221 liquid storage tank
222 conduit
230 connecting part
231 connecting part through hole
D1, D2, D3, D4 diameters
Height H1, H2
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 6. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
As shown in fig. 1, the present invention provides a wafer stage cleaning system 200, wherein the wafer stage cleaning system 200 comprises: a grinding block 210 and a cleaning liquid spray head 220, wherein the grinding block 210 is located above the wafer stage 100, a grinding surface of the grinding block 210 is parallel to the wafer stage 100, and is used for grinding the wafer stage 100, and the grinding surface extends to the inside of the grinding block 210 and comprises at least one grinding block through hole 211; the cleaning solution nozzle 220 is located in the grinding block through hole 211, is not in contact with the sidewall of the grinding block through hole 211, and is used for spraying a cleaning solution on the wafer table 100.
According to the invention, through the grinding block 210 and the cleaning liquid spray head 220, the cleaning effect and the cleaning efficiency of the pollutants 101 on the upper surface of the wafer workbench 100 can be improved; so as to improve the cleanliness and flatness of the wafer table 100, thereby improving the product quality; meanwhile, the damage to the wafer table 100 is reduced, and the service life of the wafer table 100 is prolonged.
As a further embodiment of this embodiment, the wafer stage cleaning system 200 further includes a connecting portion 230 connected to the polishing block 210, wherein the connecting portion 230 is located above the polishing block 210 and includes a connecting portion through hole 231 communicated with the polishing block through hole 211.
Specifically, as shown in fig. 1, the grinding block 210 is located above the pollutant 101, the grinding block through hole 211 is communicated with the connection portion through hole 231, so as to form a space capable of accommodating the cleaning solution spray head 220, and the side walls of the grinding block through hole 211 and the connection portion through hole 231 are in non-contact with the cleaning solution spray head 220, so as to prevent the grinding block 210 from stressing the cleaning solution spray head 220 and damaging the cleaning solution spray head 220 in the process of grinding by contacting with the pollutant 101, thereby achieving the effect of protecting the cleaning solution spray head 220.
As a further example of this embodiment, the connection means of the connection part 230 and the grinding block 210 includes one of a pin connection, a snap connection and a screw connection. Preferably, the connection is a simple and convenient locking connection, and in order to ensure that the connection through hole 231 has enough space to accommodate the cleaning solution nozzle 220 and ensure the connection stability of the connection part 230 and the grinding block 210, the cross-sectional shape of the connection part 230 may include a circular ring shape with an outer diameter ranging from 10mm to 20mm and an inner diameter ranging from 4mm to 10 mm. The outer diameter of the connecting portion 230 is preferably 13.5mm to adapt to the existing equipment, and the specific shape and operation of the connecting portion 230 are not limited herein, and may be selected according to the requirement, such as a rotary type to drive the grinding block 210 to rotate, or a mobile type, which is not limited herein.
As a further embodiment of this embodiment, the projected topography of the grinding block 210 on the wafer table 100 includes a circular ring shape with an outer diameter D1 ranging from 10mm to 35 mm; the minimum distance range of the grinding block through hole 211 comprises 4 mm-10 mm; the longitudinal section of the grinding block through hole 211 comprises one of a square shape and a reverse T shape.
Specifically, as shown in fig. 2, the structure of the grinding block 210 is illustrated, the grinding block 210 adopts a grinding block with an outer diameter D1 of 32mm, which is commonly used on a production line, so as to be directly utilized by resources, and the inner diameter D2 of the grinding block 210 adopts 7mm, that is, the minimum distance of the grinding block through hole 211 adopts 7mm, so as to satisfy the requirement of accommodating the cleaning solution nozzle 220 with a conventional size, and simultaneously expand the area of the grinding surface of the grinding block 210 as much as possible. The grinding block 210 may be a diamond grinding block having a high hardness or Al2O3A grinding block to increase the service life of the grinding block 210. In this embodiment, the longitudinal cross-sectional profile of the through hole 211 in the grinding block 210 is in a shape of inverted "T", that is, the grinding surface of the grinding block 210 has a recessed area extending from the grinding surface to the inside of the grinding block 210And a reverse T-shaped grinding block through hole 211 with a bottom diameter D3 larger than an inner diameter D2 is formed in the grinding block 210, so that the range of the cleaning liquid sprayed by the cleaning liquid spray head 220 is enlarged, and the discharge of grinding waste is facilitated. The specific shape, size and material of the grinding block 210 can also be selected according to specific needs, and is not limited herein.
As a further embodiment of this embodiment, in order to simplify the structure of the grinding block 210, in this embodiment, only 1 grinding block through hole 211 is adopted, and is located in the center of the grinding block 210. In another embodiment, the grinding block through hole 211 may be located at other positions of the grinding block 210, or a structure in which the grinding block 210 has a plurality of grinding block through holes 211 is adopted, as shown in fig. 3, which illustrates a structure including 5 grinding block through holes 211. In this structure, the grinding block 210 includes 5 grinding block through holes 211, and correspondingly includes 5 cleaning solution nozzles 220 located in the grinding block through holes 211, and the specific number, shape and distribution of the grinding block through holes 211 and the cleaning solution nozzles 220 are not limited herein.
As a further embodiment of this embodiment, the cleaning solution spray head 220 comprises a circular spray head with an inner diameter D4 ranging from 2mm to 4 mm. As shown in fig. 4, in the present embodiment, a circular nozzle with a nozzle inner diameter D4 of 3.5mm, a nozzle height H1 of 10mm, and a nozzle height H2 of 3mm is adopted, but in another embodiment, the specific size and shape of the cleaning liquid nozzle 220 may be selected according to the specific type of the cleaning liquid, and the invention is not limited herein.
As a further embodiment of this embodiment, the cleaning solution spray head 220 includes one of a fixed cleaning solution spray head and a retractable cleaning solution spray head.
Specifically, the bottom of the cleaning solution nozzle 220 does not protrude from the grinding surface, and when the cleaning solution nozzle 220 is a telescopic cleaning solution nozzle, if the cleaning solution nozzle 220 is required to be used, the distance between the cleaning solution nozzle 220 and the pollutant 101 can be reduced, so that the action effect of the cleaning solution and the pollutant 101 is further enhanced; if the cleaning solution nozzle 220 is not needed, the distance between the cleaning solution nozzle 220 and the contaminants 101 may be increased, so as to prevent the contaminants 101 from contaminating the cleaning solution nozzle 220 during the polishing process.
As a further embodiment of this embodiment, the operation manner of the grinding block 210 includes one or a combination of a translation and a rotation. The wafer stage 100 is used for adsorbing a wafer, and the wafer stage 100 may be one of a movable wafer stage or a fixed wafer stage to meet the requirement of the production process, which is not limited herein. When performing the cleaning operation, it is preferable to fix the wafer stage 100 so that the contaminants 101 having fixed positions can be provided, thereby reducing the complexity of the operation. The operation of the grinding block 210 can be a translation type, a rotation type or a combination of translation and rotation, wherein a combination of translation and rotation is preferred to improve the grinding efficiency.
As a further embodiment of this embodiment, the wafer table cleaning system 200 further includes a liquid storage tank 221 connected to the cleaning liquid spray head 220, and a control valve is further included between the liquid storage tank 221 and the cleaning liquid spray head 220.
Specifically, the cleaning solution may include one or a combination of deionized water, IPA, OK73, PGMEA, and PGME. The liquid storage tank 221 and the cleaning liquid spray head 220 are connected by a conduit 222, the conduit 222 may further be connected with a control valve, the control valve includes one or a combination of a pneumatic valve and an electromagnetic valve to control the cleaning liquid, and the type and flow rate of the cleaning liquid are not limited herein.
As a further embodiment of this embodiment, the wafer table cleaning system 200 further comprises a detection mechanism (not shown) located above the wafer table 100. The specific position of the contaminant 101 is detected by the detection mechanism, and the detected specific position information of the contaminant 101 is fed back to the grinding block 210 and the cleaning solution spray head 220, so that the contaminant 101 is cleaned. The detection mechanism may comprise, for example, a CCD, CMOS image detection mechanism, and the specific type is not limited herein.
As shown in fig. 5, the present invention further provides a method for cleaning a wafer stage, comprising the steps of:
providing the wafer table cleaning system 200 with a detection mechanism;
detecting the upper surface of the wafer stage 100 by the detection mechanism;
grinding the upper surface of the wafer table 100 by the grinding block 210, and cleaning the upper surface of the wafer table by the cleaning solution spray head 220;
the upper surface of the wafer stage 100 after being ground and cleaned is detected by the detection mechanism.
As a further embodiment of this embodiment, the manner in which the polishing block 210 and the cleaning solution nozzle 220 act on the upper surface of the wafer stage 100 includes one or a combination of before polishing and after cleaning, before cleaning and after polishing, and simultaneously performing polishing and cleaning.
Specifically, the cleaning solution nozzle 220 may spray the cleaning solution while the grinding block 210 is grinding, or spray the cleaning solution after the grinding block 210 is grinding, so as to remove the contaminants 101 generated by grinding the grinding block 210; or the cleaning liquid is sprayed before the grinding block 210 is ground, so as to improve the grinding effect. The cleaning solution is preferably sprayed before, during and after the polishing of the polishing block 210, so as to improve the polishing effect and clean the contaminants 101 timely and effectively.
Referring to fig. 6, a specific operation flow for cleaning the wafer stage 100 is illustrated. Firstly, detecting whether the upper surface of the wafer worktable 100 has the pollutant 101 by using the detection mechanism, and judging whether three cleaning operations have been performed, if the upper surface of the wafer worktable 100 has the pollutant 101 and the three cleaning operations have not been performed, feeding back the specific position information of the pollutant 101 to the grinding block 210 and the cleaning liquid spray head 220 by using the detection mechanism to clean the pollutant 101; after the cleaning process is completed, the detection mechanism detects the upper surface of the wafer table 100 again, and determines whether the contaminant 101 still exists, if the contaminant 101 does not exist, the next process operation, such as exposure and other processes, can be performed, and if the contaminant 101 still exists, the above steps are repeated until three cleaning operations are performed; after three cleaning operations, if the contaminants 101 are still present, manual cleaning is required to ensure removal of the contaminants 101.
According to the invention, the position of the pollutant 101 can be accurately judged through the detection of the detection mechanism, and the cleaning effect and the cleaning efficiency of the wafer workbench 100 can be improved through the grinding block 210 and the cleaning liquid spray head 220, so that the cleanliness and the flatness of the wafer workbench 100 are improved, the product quality can be improved, the damage to the wafer workbench 100 is reduced, and the service life of the wafer workbench 100 is prolonged.
In summary, the wafer worktable cleaning system and the cleaning method of the invention have the following beneficial effects: through grinding block and washing liquid shower nozzle, reach: 1) the cleaning effect and the cleaning efficiency of the wafer workbench are improved; 2) the cleanliness and the flatness of the wafer worktable are improved, so that the product quality is improved; 3) the damage to the wafer worktable is reduced, and the service life of the wafer worktable is prolonged. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (15)
1. A wafer table cleaning system, comprising:
the grinding block is positioned above the wafer workbench and used for grinding the wafer workbench, the grinding surface of the grinding block is parallel to the wafer workbench, and the grinding surface extends towards the inside of the grinding block and comprises at least one grinding block through hole;
and the cleaning liquid spray head is positioned in the grinding block through hole, is in non-contact with the side wall of the grinding block through hole and is used for spraying cleaning liquid on the wafer workbench.
2. The wafer table cleaning system of claim 1, wherein: the wafer workbench cleaning system further comprises a connecting part connected with the grinding block, wherein the connecting part is positioned above the grinding block and comprises a connecting part through hole communicated with the grinding block through hole.
3. The wafer table cleaning system of claim 2, wherein: the connection mode of the connecting part and the grinding block comprises one of pin connection, lock catch connection and threaded connection.
4. The wafer table cleaning system of claim 1, wherein: the projection morphology of the grinding block on the wafer workbench comprises a circular ring with the outer diameter range of 10 mm-35 mm.
5. The wafer table cleaning system of claim 1, wherein: the minimum distance range of the grinding block through hole comprises 4 mm-10 mm.
6. The wafer table cleaning system of claim 1, wherein: the grinding block through hole is positioned in the center of the grinding block.
7. The wafer table cleaning system of claim 1, wherein: the cleaning liquid spray head comprises a circular spray head with the inner diameter range of 2 mm-4 mm.
8. The wafer table cleaning system of claim 1, wherein: the cleaning liquid spray heads comprise N cleaning liquid spray heads, wherein N is more than or equal to 2.
9. The wafer table cleaning system of claim 1, wherein: the longitudinal section of the grinding block through hole is in one of a square shape and a reverse T shape.
10. The wafer table cleaning system of claim 1, wherein: the operation mode of the grinding block comprises one or a combination of a translation mode and a rotation mode.
11. The wafer table cleaning system of claim 1, wherein: the cleaning liquid spray head comprises one of a fixed cleaning liquid spray head and a telescopic cleaning liquid spray head.
12. The wafer table cleaning system of claim 1, wherein: the wafer workbench cleaning system further comprises a liquid storage tank connected with the cleaning liquid spray head through a guide pipe, and a control valve is further arranged between the liquid storage tank and the cleaning liquid spray head.
13. The wafer table cleaning system according to any one of claims 1 to 12, wherein: the wafer workbench cleaning system further comprises a detection mechanism, and the detection mechanism is located above the wafer workbench.
14. A wafer table cleaning method is characterized in that: the method comprises the following steps:
providing the wafer table cleaning system of any of claim 13;
detecting the upper surface of the wafer worktable through the detection mechanism;
grinding the upper surface of the wafer worktable through the grinding block, and cleaning the upper surface of the wafer worktable through the cleaning fluid spray head;
and detecting the upper surface of the wafer workbench after grinding and cleaning through the detection mechanism.
15. The wafer table cleaning method of claim 14, wherein: the mode that the grinding block and the cleaning liquid spray head act on the upper surface of the wafer workbench comprises one or a combination of grinding before and cleaning after, cleaning before and grinding after, and grinding and cleaning simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811094175.8A CN110928143A (en) | 2018-09-19 | 2018-09-19 | Wafer workbench cleaning system and cleaning method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811094175.8A CN110928143A (en) | 2018-09-19 | 2018-09-19 | Wafer workbench cleaning system and cleaning method |
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| CN110928143A true CN110928143A (en) | 2020-03-27 |
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| CN201811094175.8A Pending CN110928143A (en) | 2018-09-19 | 2018-09-19 | Wafer workbench cleaning system and cleaning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114012596A (en) * | 2021-10-29 | 2022-02-08 | 长江存储科技有限责任公司 | Wafer thinning equipment and method |
| CN114415479A (en) * | 2022-02-14 | 2022-04-29 | 长江存储科技有限责任公司 | Method and apparatus for removing contaminants from a lithographic apparatus |
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