CN206194755U - Crystal silicon cell's surface texture , crystal silicon cell piece and solar cell - Google Patents
Crystal silicon cell's surface texture , crystal silicon cell piece and solar cell Download PDFInfo
- Publication number
- CN206194755U CN206194755U CN201621142273.0U CN201621142273U CN206194755U CN 206194755 U CN206194755 U CN 206194755U CN 201621142273 U CN201621142273 U CN 201621142273U CN 206194755 U CN206194755 U CN 206194755U
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- China
- Prior art keywords
- smooth surface
- crystal silicon
- suede structure
- micron
- cell
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 235000008216 herbs Nutrition 0.000 claims description 10
- 210000002268 wool Anatomy 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 239000002585 base Substances 0.000 claims description 5
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 11
- 210000004027 cell Anatomy 0.000 description 29
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a crystal silicon cell's surface texture, including this surface texture's crystal silicon cell and solar cell. Crystal silicon cell's surface texture, including the sensitive surface, the sensitive surface include with electrode contact's the contact region and not with electrode contact's non - the contact region, the contact region is nanometer matte structure, non -contact area is micron matte structure or sub -micron matte structure. Nanometer matte structure can increase the contact region area of contact, has littleer contact resistance, and non - the contact region sets up to micron matte structure or sub -micron matte structure, and the passivation degree of difficulty is smaller.
Description
Technical field
The utility model is related to the technical field of solar cell, more particularly to a kind of surface texture of crystal silicon cell,
Crystalline silicon battery plate and solar cell.
Background technology
In the middle of the development of all renewable sources of energy, it is most rapid and most reliable generation assets that solar energy can be said.With too
It is positive can photoelectric technology continue to develop, nowadays, solar cell is more and more applied.The structure of solar cell
Mainly include p-type semiconductor material layer and N-type semiconductor material layer.When sunlight, luminous energy is inhaled by semiconductor material layer
Receive, electron hole pair is produced in a semiconductor material, and in p-type semiconductor material layer and N-type semiconductor material layer interface two
End is assembled electric charge and forms electric field, if now being drawn with electrode in p-type semiconductor material layer and N-type semiconductor material layer outside respectively
Go out, connect load, then external circuit forms loop, so that luminous energy can be changed into electric energy.In the making of solar cell, photoelectricity
The height of conversion efficiency is an important index.
Typically using silicon as base material, the smooth surface of crystal silicon cell is usually formed suede to existing solar battery sheet
Face increases utilization rate of the inside battery to light, and the surface texture of existing crystal silicon cell in smooth surface 1 ' as shown in figure 1, form
Micron suede structure 14 ' or sub-micron suede structure, but micron suede structure 14 ' or sub-micron suede structure limit light action simultaneously
It is not too preferable.If smooth surface 1 ' directly forms nanometer suede structure, now the area of surface texture is bigger, and limit light action is more managed
Think, but because exposed silicon area is also accordingly multiplied, the surface passivation to nanometer suede structure becomes more to be stranded
It is difficult.Additionally, internal resistance of the series resistance of silion cell as battery, it should as small as possible, in series resistance, metal electrode and silicon
Smooth surface contact resistance RcAccount for greatly, wherein, Rc=ρc/ A, ρcIt is contact resistivity, A is contact area, to be subtracted
Few contact resistance Rc, can be by improving doping concentration reduction contact resistivity ρcMode, or by increasing contact area A's
Mode reduces contact resistance Rc.How by setting a kind of structure of rational smooth surface, the limit light action of silion cell, blunt is taken into account
It is a problem for urgent need to resolve to change difficulty and contact resistance.
Utility model content
First purpose of the present utility model is to propose a kind of surface texture of crystal silicon cell, keeps preferably limit light to make
With while, reduce contact resistance, and passivation difficulty it is also smaller.
It is that, up to this purpose, the utility model uses following technical scheme：
A kind of surface texture of crystal silicon cell, including smooth surface, the smooth surface include the contact zone with electrode contact
Domain and not with the non-contact area of electrode contact, the contact area be nanometer suede structure, the non-contact area be micron
Suede structure or sub-micron suede structure.
Wherein, the nanometer suede structure is 10nm~500nm in the height on the direction of smooth surface, parallel
10nm~500nm is in the length and width on the direction of smooth surface.
Wherein, the smooth surface is formed by monocrystalline silicon by alkali making herbs into wool, and the nanometer suede structure is the length one on base
The uniform pyramid suede structure for causing.
Wherein, the micron suede structure the height on the direction of smooth surface be 1 μm~5 μm, parallel to
Length and width on the direction of smooth surface is 1 μm~5 μm.
Wherein, the smooth surface is formed by polycrystalline silicic acid making herbs into wool, and the nanometer suede structure is rectangular-shaped worm channel matte
Structure.
Wherein, the micron suede structure is 0.7 μm~5 μm in the height on the direction of smooth surface, parallel
0.7 μm~5 μm are in the length and width on the direction of smooth surface.
Second purpose of the present utility model is to propose a kind of crystal silicon cell, with preferably limit light action, can be subtracted
Few contact resistance, and its surface passivation difficulty is also smaller.
It is that, up to this purpose, the utility model uses following technical scheme：
A kind of crystalline silicon battery plate, including above-mentioned crystal silicon cell surface texture.
3rd purpose of the present utility model is to propose a kind of solar cell, keeps preferably limit light action, contact electricity
Resistance is smaller, and passivation difficulty is also smaller, improves the efficiency of battery.
It is that, up to this purpose, the utility model uses following technical scheme：
A kind of solar cell, including above-mentioned crystalline silicon battery plate.
Beneficial effect：The utility model provides a kind of surface texture of crystal silicon cell, the crystalline substance including the surface texture
Body silion cell and solar cell.The surface texture of crystal silicon cell, including smooth surface, the smooth surface include being connect with electrode
Tactile contact area and not with the non-contact area of electrode contact, the contact area is nanometer suede structure, the noncontact
Region is micron suede structure or sub-micron suede structure.Nanometer suede structure can increase the contact area of contact area, tool
There is smaller contact resistance, non-contact area is set to micron suede structure or sub-micron suede structure, and passivation difficulty is smaller.
Brief description of the drawings
Fig. 1 is the structural representation of the surface texture of the crystal silicon cell that prior art is provided.
Fig. 2 is the structural representation of the surface texture of the crystal silicon cell that the utility model is provided.
Wherein：
1- smooth surfaces, 11- contact areas, 12- non-contact areas, 13- nanometer suede structures, 14- microns of suede structure,
1 '-smooth surface, 14 '-micron suede structure.
Specific embodiment
It is that the technical problem for solving the utility model, the technical scheme for using and the technique effect for reaching are clearer,
Further illustrate the technical solution of the utility model below in conjunction with the accompanying drawings and by specific embodiment.
As shown in Fig. 2 the utility model provides a kind of surface texture of crystal silicon cell, including smooth surface 1, smooth surface
1 include with the contact area 11 of electrode contact and not with the non-contact area 12 of electrode contact, contact area 11 is nanometer suede
Structure 13, non-contact area 12 is micron suede structure 14.It is set to the smooth surface of micron suede structure 14 entirely with prior art
Compare, nanometer suede structure 13 can increase the contact area of contact area 11, with smaller contact resistance, non-contact area
12 remain set to a micron suede structure, and passivation difficulty is smaller, the need for having taken into account smooth surface passivation.Non-contact area 12 is real
Micron suede structure, or sub-micron suede structure are also not limited on border.
Nanometer suede structure 13 is general between 10nm-500nm in the height on the direction of smooth surface 1, flat
Row is general between 10nm-500nm in the length and width on the direction of smooth surface 1, and contact resistance is smaller.
Smooth surface 1 can be formed by monocrystalline silicon by alkali making herbs into wool, now nanometer suede structure 13 for base length it is consistent
Uniform pyramid suede structure, the length on its base is between 10nm-500nm.The micron suede structure of monocrystalline silicon alkali making herbs into wool
14 is general between 1 μm -5 μm in the height on the direction of smooth surface 1, the length on parallel to the direction of smooth surface 1
Degree and width are general between 1 μm -5 μm.
Smooth surface 1 can also be formed by polycrystalline silicic acid making herbs into wool, and now nanometer suede structure 13 is rectangular-shaped worm channel matte
Structure, between the general 10nm-500nm of length and width of rectangle.The micron suede structure 14 that the making herbs into wool of polycrystalline silicic acid is formed is hanging down
It is straight general between 0.7 μm -5 μm in the height on the direction of smooth surface 1, length on parallel to the direction of smooth surface 1 and
Width is general between 0.7 μm -5 μm.
When nanometer suede structure 13 and micron suede structure 14 on smooth surface 1 are in above-mentioned parameter area, can with and
Limit light action is turned round and look at, contact resistance is smaller, and passivation difficulty is also than relatively low.
The present embodiment additionally provides a kind of crystalline silicon battery plate of the surface texture including above-mentioned crystal silicon cell.With it is existing
The smooth surface for having technology to be set to micron suede structure 14 entirely is compared, and nanometer suede structure 13 can increase contact area 11
Contact area, with smaller contact resistance, non-contact area 12 remains set to a micron suede structure, and passivation difficulty compares
It is small, the need for having taken into account smooth surface passivation.Non-contact area 12 is actually also not limited to micron suede structure, or Asia
Micron suede structure.
The present embodiment additionally provides a kind of solar cell including above-mentioned crystalline silicon battery plate, taken into account limit light action,
The need for contact resistance and smooth surface are passivated, the efficiency of solar cell is improve.
In order to form the smooth surface 1 of the present embodiment, crystalline silicon battery plate can be done following treatment：(with p type single crystal silicon and
P-type polysilicon is illustrated)
Ⅰ：To p type single crystal silicon alkali making herbs into wool, the micron suede structure 14 or sub-micron matte knot of 1 μm -5 μm of size are formed
Structure；Silicon nitride diaphragm is formed on the surface of micron suede structure 14；Pass through laser incising eating away silicon nitride in electrode contact region
The nanometer suede structure 13 of 10nm-500nm nanometers of size is formed after diaphragm；Remove silicon nitride diaphragm；By phosphorus divergent contour
Into P/N knots；Wash edge P/N knots；Film is penetrated in smooth surface deposition passivated reflection reducing；Printing forms positive and negative electrode；Sintering is formed
Battery.
Ⅱ：To p-type polysilicon acid making herbs into wool, the micron suede structure 14 or sub-micron matte of 0.7 μm of -5um of size are formed
Structure；Silicon nitride diaphragm is formed on the surface of micron suede structure 14；Nitrogenized by laser incising eating away in electrode contact region
The nanometer suede structure 13 of 10nm-500nm nanometers of size is formed after silicon diaphragm；Remove silicon nitride diaphragm；Spread by phosphorus
Form P/N knots；Wash edge P/N knots；Film is penetrated in smooth surface deposition passivated reflection reducing；Printing forms positive and negative electrode；Sintering shape
Into battery.
By above-mentioned technical process, you can form the smooth surface 1 of above-described embodiment, taken into account limit light action, contact resistance
The need for being passivated with smooth surface, the efficiency of solar cell is improve.
Above content is only preferred embodiment of the present utility model, for one of ordinary skill in the art, according to this reality
With new thought, will change in specific embodiments and applications, this specification content should not be construed as
To limitation of the present utility model.
Claims (8)
1. a kind of surface texture of crystal silicon cell, it is characterised in that including smooth surface (1), the smooth surface (1) including with electricity
Pole contact contact area (11) and not with the non-contact area (12) of electrode contact, the contact area (11) is nanometer suede
Structure (13), the non-contact area (12) is micron suede structure (14) or sub-micron suede structure.
2. the surface texture of crystal silicon cell as claimed in claim 1, it is characterised in that the nanometer suede structure (13) exists
Height on the direction of smooth surface (1) is 10nm~500nm, length on parallel to the direction of smooth surface (1) and
Width is 10nm~500nm.
3. the surface texture of the crystal silicon cell as described in claim any one of 1-2, it is characterised in that the smooth surface (1)
Formed by alkali making herbs into wool by monocrystalline silicon, the nanometer suede structure (13) is the consistent uniform pyramid matte knot of the length on base
Structure.
4. the surface texture of crystal silicon cell as claimed in claim 3, it is characterised in that the micron suede structure (14) exists
Height on the direction of smooth surface (1) is 1 μm~5 μm, the length and width on parallel to the direction of smooth surface (1)
It is 1 μm~5 μm.
5. the surface texture of the crystal silicon cell as described in claim any one of 1-2, it is characterised in that the smooth surface (1)
Formed by polycrystalline silicic acid making herbs into wool, the nanometer suede structure (13) is rectangular-shaped worm channel suede structure.
6. the surface texture of crystal silicon cell as claimed in claim 5, it is characterised in that the micron suede structure (14) exists
Height on the direction of smooth surface (1) is 0.7 μm~5 μm, length and width on parallel to the direction of smooth surface (1)
Degree is 0.7 μm~5 μm.
7. a kind of crystalline silicon battery plate, it is characterised in that the surface including the crystal silicon cell described in claim any one of 1-6
Structure.
8. a kind of solar cell, it is characterised in that including the crystalline silicon battery plate described in claim 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621142273.0U CN206194755U (en) | 2016-10-20 | 2016-10-20 | Crystal silicon cell's surface texture , crystal silicon cell piece and solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621142273.0U CN206194755U (en) | 2016-10-20 | 2016-10-20 | Crystal silicon cell's surface texture , crystal silicon cell piece and solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN206194755U true CN206194755U (en) | 2017-05-24 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112466968A (en) * | 2020-11-18 | 2021-03-09 | 隆基绿能科技股份有限公司 | Photovoltaic cell and photovoltaic module |
| WO2022016742A1 (en) * | 2020-07-22 | 2022-01-27 | 宁夏隆基乐叶科技有限公司 | Back polishing method of perc battery |
| CN114171643A (en) * | 2021-12-02 | 2022-03-11 | 中节能太阳能科技（镇江）有限公司 | Fabrication method of selectively texturing heterojunction solar cells |
| CN114823951A (en) * | 2022-06-28 | 2022-07-29 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
| CN116404071A (en) * | 2023-06-07 | 2023-07-07 | 晶科能源(海宁)有限公司 | A kind of solar cell and its preparation method, photovoltaic module |
| CN117293194A (en) * | 2023-09-06 | 2023-12-26 | 天合光能股份有限公司 | Solar cell and photovoltaic module |
| US12349501B2 (en) | 2020-11-18 | 2025-07-01 | Longi Green Energy Technology Co., Ltd. | Photovoltaic cell and photovoltaic module |
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2016
- 2016-10-20 CN CN201621142273.0U patent/CN206194755U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022016742A1 (en) * | 2020-07-22 | 2022-01-27 | 宁夏隆基乐叶科技有限公司 | Back polishing method of perc battery |
| CN112466968A (en) * | 2020-11-18 | 2021-03-09 | 隆基绿能科技股份有限公司 | Photovoltaic cell and photovoltaic module |
| WO2022105821A1 (en) * | 2020-11-18 | 2022-05-27 | 隆基绿能科技股份有限公司 | Photovoltaic cell and photovoltaic assembly |
| CN112466968B (en) * | 2020-11-18 | 2025-02-11 | 隆基绿能科技股份有限公司 | Photovoltaic cell and photovoltaic module |
| AU2021383880B2 (en) * | 2020-11-18 | 2025-03-27 | Longi Green Energy Technology Co., Ltd. | Photovoltaic cell and photovoltaic assembly |
| US12349501B2 (en) | 2020-11-18 | 2025-07-01 | Longi Green Energy Technology Co., Ltd. | Photovoltaic cell and photovoltaic module |
| CN114171643A (en) * | 2021-12-02 | 2022-03-11 | 中节能太阳能科技（镇江）有限公司 | Fabrication method of selectively texturing heterojunction solar cells |
| CN114823951A (en) * | 2022-06-28 | 2022-07-29 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
| CN116404071A (en) * | 2023-06-07 | 2023-07-07 | 晶科能源(海宁)有限公司 | A kind of solar cell and its preparation method, photovoltaic module |
| CN117293194A (en) * | 2023-09-06 | 2023-12-26 | 天合光能股份有限公司 | Solar cell and photovoltaic module |
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