CN201349006Y - Selective emitter solar cell - Google Patents
Selective emitter solar cell Download PDFInfo
- Publication number
- CN201349006Y CN201349006Y CN 200820137684 CN200820137684U CN201349006Y CN 201349006 Y CN201349006 Y CN 201349006Y CN 200820137684 CN200820137684 CN 200820137684 CN 200820137684 U CN200820137684 U CN 200820137684U CN 201349006 Y CN201349006 Y CN 201349006Y
- Authority
- CN
- China
- Prior art keywords
- solar cell
- selective emitter
- battery
- electrode
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a selective emitter solar cell, which comprises a back surface field 1 connected with a phosphorus layer 2. The upper end of the phosphorus layer 2 has a convex-concave surface covered with a silicon carbide layer 4, and the groove of the convex-concave surface is provided with a silicon silver alloy junction 3. The utility model has the advantages that the emitting area of the solar cell is divided into a heavily doped area and a lightly doped zone, and the heavily doped area is formed in the area in contact with an electrode, which is conducive to achieving ohmic contact, thereby inhibiting the rectification effect of a semiconductor and a metal contact resistor.
Description
Technical field
The utility model relates to a kind of solar cell.
Background technology
The proposition of the notion of third generation solar cell is that high efficiency solar cell is the basis, crystal silicon solar batteries occupies more than 90% of the photovoltaic market share always, in recent years, the great achievement that efficient monocrystalline silicon battery obtains makes status and the prospect of crystal silicon cell in future development more optimistic.University of New South Wales photovoltaic device research center is the most outstanding representative in this research field, their the PERL battery of development is the keeper of current monocrystalline silicon battery world record, the laboratory conversion efficiency is up to 24.7%, and it is exactly the making of having used selective emitter solar battery that a key technology is wherein arranged.So-called selective emitter is meant, the emitter region of electrode is divided into two parts: carry out heavy doping below the front surface gate electrode line, realize good Ohmic contact, its sheet resistance is about 5-20 Ω/; And carrying out light dope at non-electrode district (being the light accepting part branch), its sheet resistance is about 80-200 Ω/.
The selective emitter battery is considered to improve the effective means of the efficient of solar cell, its advantage is as follows: a) because it can realize lateral junction below the electrode, minimizing minority carrier hole is compound this electrode zone, so can effectively improve the collection efficiency of photo-generated carrier; B) because the semiconductor below the metal electrode is carried out heavy doping, can reduce metal and semi-conductive contact resistance; C) because non-electrode zone is carried out the doping of low concentration, help reducing the recombination rate of front surface photo-generated carrier; D) can make very thin " dead layer " district, so can improve the short wave response of battery to solar spectrum.
So the making selective emitter solar battery can increase substantially the conversion efficiency of solar cell.Nowadays, realize that selective emitter has a variety of forms, as photoetching, lbg etc., but these methods are too complicated, and production cost is higher, in industrial production, be difficult to obtain one simply, effectively, the implement device of selective emitter battery cheaply.
Summary of the invention
At the shortcoming of existing selective emitter solar battery, the utility model provides a kind of new type of selective emitter solar battery.
To achieve these goals, the measure taked of the utility model is:
A kind of selective emitter solar battery, this battery comprise back of the body electric field 1, and back of the body electric field 1 is connected with phosphorus layer 2, and there is male and fomale(M﹠F) the upper end of phosphorus layer 2, is coated with silicon carbide layer 4 on the male and fomale(M﹠F), and the groove of male and fomale(M﹠F) is provided with silicon silver alloy knot 3.
The beneficial effects of the utility model: the emitter region of solar cell is divided into heavily doped region and light doping section, forms heavily doped region, help realizing ohmic contact, thereby suppress the rectifying effect of semiconductor and Metal Contact resistance in the zone that contacts with electrode; And below non-electrode district, carry out light dope, help improving the life-span of minority carrier, and then improve the efficient of battery.
Description of drawings
Fig. 1. structural representation of the present utility model.
Embodiment
See also its implementation process of description of drawings:
A kind of selective emitter solar battery, this battery comprise back of the body electric field 1, and back of the body electric field 1 is connected with phosphorus layer 2, and there is male and fomale(M﹠F) the upper end of phosphorus layer 2, is coated with silicon carbide layer 4 on the male and fomale(M﹠F), and the groove of male and fomale(M﹠F) is provided with silicon silver alloy knot 3.With POCL
3Be the phosphorus source; P type silicon chip is carried out high-concentration dopant; the sheet resistance that forms the surface is about 10-20 Ω/; utilize then silk screen printing the mode printed battery positive electrode and carry out sintering; generate the Si-Ag alloy junction; make Si-Ag form good Ohmic contact; then the positive electrode grid line is all eroded; only keep the Si-Ag alloy junction; utilize aqueous slkali that the battery sheet is corroded then; form the light dope of non-electrode district; the sheet resistance of realizing the surface is about 80-150 Ω/; the Si-Ag alloy junction of the initial generation that generates can be made the protective layer of the Si below the electrode, makes the Si below the electrode avoid corrosion like this, thereby realizes the preparation of selective emitter solar battery.Beneficial effect is: the emitter region of solar cell is divided into heavily doped region and light doping section, forms heavily doped region in the zone that contacts with electrode, help realizing ohmic contact, thereby suppress the rectifying effect of semiconductor and Metal Contact resistance; And below non-electrode district, carry out light dope, help improving the life-span of minority carrier, and then improve the efficient of battery.
Claims (1)
1, a kind of selective emitter solar battery is characterized in that, this battery comprises back of the body electric field (1), and back of the body electric field (1) is connected with phosphorus layer (2), and there is male and fomale(M﹠F) the upper end of phosphorus layer (2), be coated with silicon carbide layer (4) on the male and fomale(M﹠F), the groove of male and fomale(M﹠F) is provided with silicon silver alloy knot (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200820137684 CN201349006Y (en) | 2008-09-28 | 2008-09-28 | Selective emitter solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200820137684 CN201349006Y (en) | 2008-09-28 | 2008-09-28 | Selective emitter solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201349006Y true CN201349006Y (en) | 2009-11-18 |
Family
ID=41368473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200820137684 Expired - Fee Related CN201349006Y (en) | 2008-09-28 | 2008-09-28 | Selective emitter solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201349006Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976702A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing process and structure of selective emitter solar cell |
| CN106663713A (en) * | 2014-08-07 | 2017-05-10 | 仁川大学校产学协力团 | High-performance selective emitter element and method for manufacturing same |
-
2008
- 2008-09-28 CN CN 200820137684 patent/CN201349006Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976702A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing process and structure of selective emitter solar cell |
| CN106663713A (en) * | 2014-08-07 | 2017-05-10 | 仁川大学校产学协力团 | High-performance selective emitter element and method for manufacturing same |
| CN106663713B (en) * | 2014-08-07 | 2018-04-13 | 仁川大学校产学协力团 | High performance selective emitter element and its manufacture method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201112399Y (en) | Solar energy battery with condensed-boron condensed-phosphorus diffusion structure | |
| CN105870215A (en) | Rear surface passivation contact battery electrode structure and preparation method thereof | |
| CN201966219U (en) | N type silicon solar cell | |
| CN103489934A (en) | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof | |
| CN102738304B (en) | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure | |
| CN103029423B (en) | Solar battery sheet and printing screen thereof | |
| CN104752562A (en) | Preparation method of local boron back surface passive field solar cell | |
| CN205657066U (en) | Back passivation contact battery electrode structure | |
| WO2020211207A1 (en) | Bifacial solar cell and preparation method therefor | |
| CN110047952A (en) | A kind of solar battery Al grid line structure and preparation method thereof | |
| CN109585600A (en) | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC | |
| CN203932078U (en) | A kind of back of the body passivation solar cell | |
| CN102956719A (en) | Selectivity emitting electrode solar battery prepared by using silicon micro nanometer structure | |
| CN203250754U (en) | Front grid line of solar cell and solar cell | |
| CN104716209A (en) | Solar cell based on silicon substrate nanowire and preparing method thereof | |
| CN103346172B (en) | Heterojunction solar battery and preparation method thereof | |
| CN201349006Y (en) | Selective emitter solar cell | |
| CN205564764U (en) | Back passivation contact battery structure | |
| CN201717269U (en) | Solar cell with selective emitter | |
| CN202076297U (en) | Back contact HIT solar cell structure based on P-type silicon chip | |
| CN209199966U (en) | A kind of low cost p-type all back-contact electrodes crystal silicon solar battery | |
| CN204102912U (en) | A kind of Graphene silicon solar cell | |
| CN207458953U (en) | A kind of high performance solar batteries of two-sided doping | |
| CN104282772A (en) | Positive electrode solar crystalline silicon battery with four main grid lines | |
| CN103117311B (en) | A kind of crystal silicon solar batteries with transparency electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091118 Termination date: 20120928 |