CN206188921U - Shorten single crystal growing furnace melt time device - Google Patents
Shorten single crystal growing furnace melt time device Download PDFInfo
- Publication number
- CN206188921U CN206188921U CN201621131779.1U CN201621131779U CN206188921U CN 206188921 U CN206188921 U CN 206188921U CN 201621131779 U CN201621131779 U CN 201621131779U CN 206188921 U CN206188921 U CN 206188921U
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crystal growing
- growing furnace
- melt time
- time device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a shorten single crystal growing furnace melt time device, in setting up the furnace chamber at the single crystal growing furnace, be located the heat -generating body of crucible top, the heat -generating body can be switched on and generated heat, and shorten single crystal growing furnace melt time device is still including installing the heterogeneous electrode on the bell of single crystal growing furnace, the insulating setting between heterogeneous electrode and the bell, the heat -generating body is connected with heterogeneous electrode is electrically conductive, and heterogeneous electrode is connected to the power through electric wire and switch. The heat -generating body passes through that conductive rope and heterogeneous electrode are electrically conductive to be connected. Shorten single crystal growing furnace melt time device is including the power device that can promote or transfer the heat -generating body. Expect to heat to single silicon together with current heating device through the heat -generating body with this application, shortened the melt time, improved monocrystalline rod's production efficiency, reduced monocrystalline rod's manufacturing cost.
Description
Technical field
The utility model belongs to monocrystalline silicon production technical field, is related to a kind of shortening single crystal growing furnace melt time device.
Background technology
In field of photovoltaic power generation, monocrystalline silicon is the important materials of solar cell, current monocrystalline solar power generation into
, about in 1 yuan/degree, the cost of solar power generation is mainly the cost that solar battery sheet makes processing, after power station is built up for this
Administration fee is at a fairly low.The cost of solar power generation is reduced, otherwise the conversion of monocrystalline solar cells piece will be improved
Efficiency, otherwise the processing cost of cell piece will be reduced.The commercial batteries efficiency of present large-scale production has reached 16%-
18%, almost without room for improvement, the unit cost that reduce monocrystalline solar power generation will set about from solar battery sheet.Monocrystalline
The cost of the battery plate substrate silicon chip of solar power generation accounts for 70% or so of cell piece totle drilling cost, and the crystal pulling cost of monocrystalline silicon piece is accounted for
The 70% of whole monocrystalline silicon piece production cost.So to reduce the cost of solar power generation it is necessary to reduce being produced into for monocrystal rod
This.
The growing method of present monocrystal rod is produced using vertical pulling method in single crystal growing furnace mostly.All of melt is all adopted
Heated with graphite heater, because of slow leading of, across silica crucible, graphite crucible two-layer, being absorbed heat in the middle of heater and silicon material
Cause the heat time long.The technological process that single crystal growing furnace carries out vertical pulling method monocrystalline production includes shove charge, charging, closes stove, evacuation, melts
Material, seeding, necking down, shouldering, isometrical, ending, blowing out, tear the techniques such as stove open, above-mentioned a whole set of production technology is time-consuming about at 80 hours
Left and right, because the firing rate of single crystal growing furnace causes that present melt technique needs 8-10 hour slowly, the overall crystal pulling efficiency of influence,
Production cost is high.
Utility model content
Based on this, it is necessary to provide a kind of shortening single crystal growing furnace melt time device that can shorten the melt time.
Shortening single crystal growing furnace melt time device of the present utility model, including in being arranged on the furnace chamber of single crystal growing furnace, positioned at crucible
The heater of top, the heater being capable of heating power.
The advantage of the application is：In existing single crystal growing furnace have silicon material is heated, be arranged on outside crucible wall
The heater for enclosing, the application sets a heater by the top of crucible, to single silicon together with existing heater
Material is heated, and so as to shorten the melt time, improves the production efficiency of monocrystal rod, reduces the production cost of monocrystal rod.
Wherein in one embodiment, the single crystal growing furnace melt time device that shortens also includes being arranged on the bell of single crystal growing furnace
On multiphase electrode, insulation set between the multiphase electrode and bell；The heater is connected with multiphase electrodes conduct, described
Multiphase electrode is connected to power supply by electric wire and switch.
Wherein in one embodiment, the heater is connected by conductive cords with multiphase electrodes conduct.
Wherein in one embodiment, the shortening single crystal growing furnace melt time device includes to be lifted or transferring heater
Power set.
Wherein in one embodiment, the power set include that the motor being arranged on bell and two ends connect respectively
Drawstring on motor and heater.
Wherein in one embodiment, the drawstring is tungsten rope, and the tungsten rope includes top tungsten rope and bottom tungsten rope,
It is connected with each other by insulator between the top tungsten rope and bottom tungsten rope.
Wherein in one embodiment, the heater is circular structure.
Wherein in one embodiment, encapsulant is coated with the side wall per phase electrode.
Brief description of the drawings
Fig. 1 is the structural representation that the utility model shortens single crystal growing furnace melt time device；
Fig. 2 is the longitudinal sectional view that the utility model shortens single crystal growing furnace melt time device；
Fig. 3 is partial enlarged drawings of the Fig. 2 at B；
Fig. 4 is partial enlarged drawings of the Fig. 1 at C；
Fig. 5 is partial enlarged drawings of the Fig. 2 at D；
Fig. 6 is that the utility model shortening single crystal growing furnace melt time device is installed to the sectional view after single crystal growing furnace.
Specific embodiment
To enable above-mentioned purpose of the present utility model, feature and advantage more obvious understandable, below in conjunction with the accompanying drawings to this
The specific embodiment of utility model is described in detail.Elaborate many details in order to abundant in the following description
Understand the utility model.But the utility model can be implemented with being much different from other manner described here, this area
Technical staff can do similar improvement in the case of without prejudice to the utility model intension, therefore the utility model does not receive following public affairs
The limitation of the specific embodiment opened.
Below in conjunction with the accompanying drawings, better embodiment of the present utility model is illustrated.
Shortening single crystal growing furnace melt time device of the present utility model, including in being arranged on the furnace chamber of single crystal growing furnace, positioned at crucible
The heater 8 of top, heater being capable of heating power.Heater is circular structure.
Shorten the three-phase electrode that single crystal growing furnace melt time device is included on the bell 1 of single crystal growing furnace, three-phase electrode with
Insulation set between bell, ceramics seat 2 is provided between specific electrode bottom surface and bell, and ceramics are additionally provided with the top of electrode
Lid 3；Heater is conductively connected with three-phase electrode, and three-phase electrode is by the switch through the electric wire of ceramic cap 3 and setting in circuit
It is connected in electrical control cubicles.Preferably, electrode 4 is copper electrode.
Heater is conductively connected by conductive cords with three-phase electrode, and the conductive cords 5 are conductive tungsten rope.Because heater is circle
The structure of ring-type, conductive cords can be connected directly between on heater by line nose 7, without being opened up on heater in addition
Mounting hole.
Shortening single crystal growing furnace melt time device includes to be lifted or being transferred the power set of heater.Power set include
Motor 6 and two ends on bell are connected to the drawstring on motor and heater.Drawstring is resistant to elevated temperatures tungsten rope,
And tungsten rope includes top tungsten rope 9 and bottom tungsten rope 11, mutually interconnected by insulator 10 between top tungsten rope 9 and bottom tungsten rope 11
Connect, as shown in figure 4, specific be connected with each other between top tungsten rope and bottom tungsten rope by ceramic block.
After silicon material thawing, heater is lifted at bell by power set, so as to not interfere with the life of monocrystal rod
Growth process, and be conducive to improving the whole service life for shortening single crystal growing furnace melt time device.
Encapsulant is coated with side wall per phase electrode, the encapsulant is tetrafluoride carbon block 12.
The step of fusing silicon material, is as follows：
A), heater is transferred to apart from the suitable position of crucible top surface by power set；
B), switch is opened, makes heater heating power；
C), after silicon material is melted, be lifted up heater at bell by power set by closing switch.
Multiphase electrode is connected to electrical control cubicles, in step b), the voltage and current of heater, adjustment is set by electrical control cubicles
The heat production temperature of heater.Preferably, setting electric current is 800-1000A, and voltage is 40-60V, can be saved 3.5-4.5 hours
The melt time.Setting electric current 800A, voltage 50V, power is 40KW, can finally save 4 melt times of hour.Setting
Electric current 1000A, voltage 60V, power is 60KW, can finally save 4.5 melt times of hour.
There is heater being heated to silicon material, being arranged on crucible wall periphery, this Shen in existing single crystal growing furnace
One heater please is set by the top of crucible, single silicon material is heated together with existing heater, so as to contract
The short melt time, the production efficiency of monocrystal rod is improve, reduce the production cost of monocrystal rod.In addition, after silicon material thawing,
Heater is lifted at bell by power set, so as to not interfere with the growth course of monocrystal rod, can also improve whole contracting
The service life of short single crystal growing furnace melt time.
In the prior art, because the time of melt is more long, also than more serious, the shortening single crystal growing furnace of the application melts thermal loss
Material time method accelerates the speed of melt, reduces the loss of heat.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and its description is more specific and detailed,
But therefore can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (8)
- It is 1. a kind of to shorten single crystal growing furnace melt time device, it is characterised in that：In including being arranged on the furnace chamber of single crystal growing furnace, positioned at crucible The heater of top, the heater being capable of heating power.
- It is 2. according to claim 1 to shorten single crystal growing furnace melt time device, it is characterised in that：The shortening single crystal growing furnace melt Time device also includes the multiphase electrode on the bell of single crystal growing furnace, insulation set between the multiphase electrode and bell； The heater is connected with multiphase electrodes conduct, and the multiphase electrode is connected to power supply by electric wire and switch.
- It is 3. according to claim 2 to shorten single crystal growing furnace melt time device, it is characterised in that：The heater is by conduction Rope is connected with multiphase electrodes conduct.
- It is 4. according to claim 3 to shorten single crystal growing furnace melt time device, it is characterised in that：The shortening single crystal growing furnace melt Time device includes to be lifted or being transferred the power set of heater.
- It is 5. according to claim 4 to shorten single crystal growing furnace melt time device, it is characterised in that：The power set include peace Motor and two ends on bell are connected to the drawstring on motor and heater.
- It is 6. according to claim 5 to shorten single crystal growing furnace melt time device, it is characterised in that：The drawstring is tungsten rope, and And the tungsten rope includes top tungsten rope and bottom tungsten rope, is mutually interconnected by insulator between the top tungsten rope and bottom tungsten rope Connect.
- It is 7. according to claim 1 to shorten single crystal growing furnace melt time device, it is characterised in that：The heater is annular shape Structure.
- It is 8. according to claim 1 to shorten single crystal growing furnace melt time device, it is characterised in that：Wrapped on side wall per phase electrode It is covered with encapsulant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621131779.1U CN206188921U (en) | 2016-10-17 | 2016-10-17 | Shorten single crystal growing furnace melt time device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621131779.1U CN206188921U (en) | 2016-10-17 | 2016-10-17 | Shorten single crystal growing furnace melt time device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206188921U true CN206188921U (en) | 2017-05-24 |
Family
ID=58730644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621131779.1U Active CN206188921U (en) | 2016-10-17 | 2016-10-17 | Shorten single crystal growing furnace melt time device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206188921U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222737A (en) * | 2016-10-17 | 2016-12-14 | 宁夏协鑫晶体科技发展有限公司 | Shorten single crystal growing furnace melt time device and method |
-
2016
- 2016-10-17 CN CN201621131779.1U patent/CN206188921U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222737A (en) * | 2016-10-17 | 2016-12-14 | 宁夏协鑫晶体科技发展有限公司 | Shorten single crystal growing furnace melt time device and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204779921U (en) | Novel polycrystalline silicon side layering heating device | |
| CN102296352A (en) | Ingot casting method for single polysilicon of 800kg | |
| CN201466173U (en) | Heating and insulating device for storage batteries | |
| CN108922973A (en) | A kind of photovoltaic module and its packaging method based on perovskite solar battery | |
| CN206188921U (en) | Shorten single crystal growing furnace melt time device | |
| CN102865685B (en) | Preheating, heat-insulating and anti-freezing device for fused salt heat absorber | |
| CN105063747A (en) | Liquid continuous feeding polysilicon casting equipment and production method thereof | |
| CN202390560U (en) | Large-capacity polysilicon ingot furnace thermal field structure | |
| CN113479873A (en) | Continuous graphitization and high-temperature carbonization integrated furnace and working method thereof | |
| CN206188920U (en) | Single crystal growing furnace melt time contraction device | |
| CN202430328U (en) | Heater used for thermal field of MCZ (magnetic-field-applied Czochralski method) monocrystal furnace | |
| CN106222737A (en) | Shorten single crystal growing furnace melt time device and method | |
| CN215946775U (en) | Continuous graphitization and high-temperature carbonization integrated furnace | |
| CN203923449U (en) | A kind of low-energy consumption single-crystal stove | |
| WO2019041144A1 (en) | Lithium-ion battery and lithium-ion battery pack | |
| CN102259861B (en) | Starting method and system of polycrystalline silicon reduction furnace | |
| CN203382848U (en) | High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate | |
| CN115925226A (en) | Electric melting furnace starting method for glass solidification of high-level radioactive waste liquid | |
| CN201473324U (en) | Overhead type polysilicon furnace with upper heater and lower heater | |
| CN101717962B (en) | One-section three-area electric heating baking method of prebaking aluminium cell | |
| CN210886316U (en) | Polysilicon ingot casting thermal field heat insulation cage | |
| CN210458426U (en) | Polycrystal ingot furnace heater | |
| CN203807180U (en) | Internal serial graphitization furnace for producing artificial graphite negative electrode material | |
| CN205907394U (en) | Polycrystalline silicon ingot furnace is with six heating device | |
| CN207425978U (en) | A kind of lithium battery group |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |