CN106222737A - Shorten single crystal growing furnace melt time device and method - Google Patents
Shorten single crystal growing furnace melt time device and method Download PDFInfo
- Publication number
- CN106222737A CN106222737A CN201610901227.2A CN201610901227A CN106222737A CN 106222737 A CN106222737 A CN 106222737A CN 201610901227 A CN201610901227 A CN 201610901227A CN 106222737 A CN106222737 A CN 106222737A
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- CN
- China
- Prior art keywords
- single crystal
- heater
- crystal growing
- growing furnace
- melt time
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention relates to shorten single crystal growing furnace melt time device and method, including in the furnace chamber being arranged on single crystal growing furnace, be positioned at the heater above crucible, described heater can heating power.Shorten single crystal growing furnace melt time method, including single crystal growing furnace, equipped with silicon material crucible, be arranged on the peripheral heater of crucible, above-mentioned shortening single crystal growing furnace melt time device；The step of melted silicon material is as follows: a), is transferred to heater apart from the suitable position of crucible end face by power set；B), open switch, make heater heating power；C), after silicon material melts, closing switch, by power set, heater is lifted up at bell.By single silicon material is heated together with existing heater by the heater of the application, shorten the melt time, improve the production efficiency of monocrystal rod, reduce the production cost of monocrystal rod.
Description
Technical field
The invention belongs to monocrystalline silicon production technical field, relate to a kind of shortening single crystal growing furnace melt time device and method.
Background technology
In field of photovoltaic power generation, monocrystal silicon is the important materials of solaode, the one-tenth of current monocrystalline solar electrical energy generation
This is about at 1 yuan/degree, and the cost of solar electrical energy generation is mainly the cost of solar battery sheet fabrication and processing, after power station is built up
Administration fee is at a fairly low.The cost of solar electrical energy generation to be reduced, or the conversion of monocrystalline solar cells sheet will be improved
Efficiency, or the processing cost of cell piece will be reduced.The commercial batteries efficiency of large-scale production now has reached 16%-
18%, almost without room for improvement, the unit cost of monocrystalline solar electrical energy generation to be reduced will be set about from solar battery sheet.Monocrystalline
The cost of the cell piece base material silicon chip of solar electrical energy generation accounts for about the 70% of cell piece totle drilling cost, and the crystal pulling cost of monocrystalline silicon piece accounts for
The 70% of whole monocrystalline silicon piece production cost.So the cost of solar electrical energy generation to be reduced is it is necessary to the production reducing monocrystal rod becomes
This.
The growing method of monocrystal rod uses vertical pulling method to produce in single crystal growing furnace mostly now.All of melt is all adopted
Carry out heating with graphite heater, because of in the middle of heater and silicon material across silica crucible, graphite crucible two-layer, slow leading of absorbing heat
Cause heat time heating time long.Single crystal growing furnace carry out the technological process of vertical pulling method monocrystalline production include shove charge, feed, close stove, evacuate, molten
Material, seeding, necking down, shouldering, isometrical, ending, blowing out, tearing the techniques such as stove open, above-mentioned a whole set of production technology is time-consuming about at 80 hours
Left and right, owing to the firing rate of single crystal growing furnace makes present melt technique need 8-10 hour slowly, the overall crystal pulling efficiency of impact,
Production cost is high.
Summary of the invention
Based on this, it is necessary to provide a kind of shortening single crystal growing furnace melt time device that can shorten the melt time and method.
The shortening single crystal growing furnace melt time device of the present invention, including in the furnace chamber being arranged on single crystal growing furnace, be positioned at above crucible
Heater, described heater can heating power.
The advantage of the application is: existing single crystal growing furnace has that silicon material is heated, be arranged on outside crucible wall
The heater enclosed, the application is by being provided above a heater, to single silicon together with existing heater at crucible
Material heats, thus shortens the melt time, improves the production efficiency of monocrystal rod, reduces the production cost of monocrystal rod.
Wherein in an embodiment, described shortening single crystal growing furnace melt time device also includes the bell being arranged on single crystal growing furnace
On heterogeneous electrode, between described heterogeneous electrode and bell insulation arrange；Described heater is connected with heterogeneous electrodes conduct, described
Heterogeneous electrode is connected to power supply by electric wire and switch.
Wherein in an embodiment, described heater is connected with heterogeneous electrodes conduct by conductive cords.
Wherein in an embodiment, described shortening single crystal growing furnace melt time device includes to promote or transferring heater
Power set.
Wherein in an embodiment, described power set include that the motor being arranged on bell and two ends connect respectively
Stay cord on motor and heater.
Wherein in an embodiment, described stay cord is tungsten rope, and described tungsten rope includes top tungsten rope and bottom tungsten rope,
It is connected with each other by insulator between described top tungsten rope and bottom tungsten rope.
Wherein in an embodiment, described heater is circular structure.
Wherein in an embodiment, the sidewall of every phase electrode is coated with encapsulant.
A kind of shortening single crystal growing furnace melt time method, utilizes above-mentioned shortening single crystal growing furnace melt time device melted silicon material,
Step is as follows:
A), by power set, heater dropped to the position that distance crucible end face is predetermined；
B), heater heating power is made；
C), after silicon material melts, disconnect the power supply of heater, by power set, heater is lifted up bell
Place.
The advantage of the application is: existing single crystal growing furnace has that silicon material is heated, be arranged on outside crucible wall
The heater enclosed, the application is by being provided above a heater, to single silicon together with existing heater at crucible
Material heats, thus shortens the melt time, improves the production efficiency of monocrystal rod, reduces the production cost of monocrystal rod.
It addition, after silicon material melts, heater is risen at bell by power set, thus does not interferes with the growth of monocrystal rod
Journey.
Wherein in an embodiment, in step b), set the voltage and current of heater, adjust the heat production of heater
Temperature.
Accompanying drawing explanation
Fig. 1 is the structural representation that the present invention shortens single crystal growing furnace melt time device；
Fig. 2 is the longitudinal sectional view that the present invention shortens single crystal growing furnace melt time device；
Fig. 3 is Fig. 2 partial enlarged drawing at B；
Fig. 4 is Fig. 1 partial enlarged drawing at C；
Fig. 5 is Fig. 2 partial enlarged drawing at D；
Fig. 6 is that the present invention shortens the sectional view after single crystal growing furnace melt time device is installed to single crystal growing furnace.
Detailed description of the invention
Understandable, below in conjunction with the accompanying drawings to the present invention for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
Detailed description of the invention be described in detail.Elaborate a lot of detail in the following description so that fully understanding this
Bright.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can be not
Doing similar improvement in the case of running counter to intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
Below in conjunction with the accompanying drawings, the better embodiment of the present invention is described.
The shortening single crystal growing furnace melt time device of the present invention, including in the furnace chamber being arranged on single crystal growing furnace, be positioned at above crucible
Heater 8, heater can heating power.Heater is circular structure.
Shorten single crystal growing furnace melt time device and include the three-phase electrode that is arranged on the bell 1 of single crystal growing furnace, three-phase electrode with
Between bell, insulation is arranged, and is provided with ceramics seat 2 between concrete electrode bottom surface and bell, and the top of electrode is additionally provided with pottery
Lid 3；Heater is conductively connected with three-phase electrode, and three-phase electrode is by through ceramic cap 3 electric wire and setting switch in circuit
It is connected in electrical control cubicles.Preferably, electrode 4 is copper electrode.
Heater is conductively connected with three-phase electrode by conductive cords, and this conductive cords 5 is conduction tungsten rope.Owing to heater is circle
Ring-type structure, conductive cords can be connected directly between on heater, without additionally offering on heater by line nose 7
Installing hole.
Shorten the power set that single crystal growing furnace melt time device includes promoting or to transfer heater.Power set include
The motor 6 being arranged on bell and two ends are connected to the stay cord on motor and heater.Stay cord is resistant to elevated temperatures tungsten rope,
And tungsten rope includes top tungsten rope 9 and bottom tungsten rope 11, interconnected by insulator 10 phase between top tungsten rope 9 and bottom tungsten rope 11
Connect, as shown in Figure 4, be connected with each other by ceramic block between concrete top tungsten rope and bottom tungsten rope.
After silicon material melts, by power set, heater is risen at bell, thus do not interfere with the life of monocrystal rod
Growth process, and be conducive to improving the service life of whole shortening single crystal growing furnace melt time device.
Being coated with encapsulant on the sidewall of every phase electrode, this encapsulant is tetrafluoride carbon block 12.
A kind of shorten single crystal growing furnace melt time method, including single crystal growing furnace, equipped with silicon material crucible, to be arranged on crucible peripheral
Heater, above-mentioned shortening single crystal growing furnace melt time device；The step of melted silicon material is as follows:
A), by power set, heater is transferred to apart from the suitable position of crucible end face；
B), open switch, make heater heating power；
C), after silicon material melts, closing switch, by power set, heater is lifted up at bell.
Heterogeneous electrode is connected to electrical control cubicles, in step b), is set the voltage and current of heater by electrical control cubicles, adjusts
The heat production temperature of heater.Preferably, setting electric current as 800-1000A, voltage is 40-60V, can save 3.5-4.5 hour
The melt time.Setting electric current 800A, voltage 50V, power is 40KW, finally can save the melt time of 4 hours.Set
Electric current 1000A, voltage 60V, power is 60KW, finally can save the melt time of 4.5 hours.
Existing single crystal growing furnace has heater that heat silicon material, that be arranged on crucible wall periphery, this Shen
Together with existing heater, single silicon material please be heated by being provided above a heater at crucible, thus contracts
The short melt time, improve the production efficiency of monocrystal rod, reduce the production cost of monocrystal rod.It addition, after silicon material melts,
By power set, heater is risen at bell, thus do not interfere with the growth course of monocrystal rod, also can improve whole contracting
The service life of short single crystal growing furnace melt time.
In prior art, owing to the time of melt is longer, thermal loss also ratio is more serious, and the shortening single crystal growing furnace of the application melts
Material time method accelerates the speed of melt, reduces the loss of heat.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic executed in example is all described, but, as long as the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but also
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that, come for those of ordinary skill in the art
Saying, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a shortening single crystal growing furnace melt time device, it is characterised in that: include being arranged in the furnace chamber of single crystal growing furnace, be positioned at crucible
The heater of top, described heater can heating power.
Shortening single crystal growing furnace melt time device the most according to claim 1, it is characterised in that: described shortening single crystal growing furnace melt
Time device also includes the heterogeneous electrode being arranged on the bell of single crystal growing furnace, and between described heterogeneous electrode and bell, insulation is arranged；
Described heater is connected with heterogeneous electrodes conduct, and described heterogeneous electrode is connected to power supply by electric wire and switch.
Shortening single crystal growing furnace melt time device the most according to claim 2, it is characterised in that: described heater is by conduction
Rope is connected with heterogeneous electrodes conduct.
Shortening single crystal growing furnace melt time device the most according to claim 3, it is characterised in that: described shortening single crystal growing furnace melt
Time device includes the power set that can promote or transfer heater.
Shortening single crystal growing furnace melt time device the most according to claim 4, it is characterised in that: described power set include peace
The motor being contained on bell and two ends are connected to the stay cord on motor and heater.
Shortening single crystal growing furnace melt time device the most according to claim 5, it is characterised in that: described stay cord is tungsten rope, and
And described tungsten rope includes top tungsten rope and bottom tungsten rope, interconnected mutually by insulator between described top tungsten rope and bottom tungsten rope
Connect.
Shortening single crystal growing furnace melt time device the most according to claim 1, it is characterised in that: described heater is circular
Structure.
Shortening single crystal growing furnace melt time device the most according to claim 1, it is characterised in that: wrap on the sidewall of every phase electrode
It is covered with encapsulant.
9. a shortening single crystal growing furnace melt time method, it is characterised in that: utilize the single crystal growing furnace that shortens as claimed in claim 1 to melt
Material time device melted silicon material, step is as follows:
A), by power set, heater dropped to the position that distance crucible end face is predetermined；
B), heater heating power is made；
C), after silicon material melts, disconnect the power supply of heater, by power set, heater is lifted up at bell.
Shortening single crystal growing furnace melt time method the most according to claim 9, it is characterised in that: in step b), set and send out
The voltage and current of hot body, adjusts the heat production temperature of heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610901227.2A CN106222737A (en) | 2016-10-17 | 2016-10-17 | Shorten single crystal growing furnace melt time device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610901227.2A CN106222737A (en) | 2016-10-17 | 2016-10-17 | Shorten single crystal growing furnace melt time device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106222737A true CN106222737A (en) | 2016-12-14 |
Family
ID=58076998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610901227.2A Pending CN106222737A (en) | 2016-10-17 | 2016-10-17 | Shorten single crystal growing furnace melt time device and method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001010892A (en) * | 1999-06-22 | 2001-01-16 | Mitsubishi Materials Silicon Corp | Method for melting polycrystalline silicon for silicon single crystal pulling device |
| CN101240444A (en) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | Method and device for manufacturing silica semiconductor wafer |
| CN104583467A (en) * | 2013-06-21 | 2015-04-29 | Lg矽得荣株式会社 | Silicon single crystal growing device and method of growing same |
| CN206188921U (en) * | 2016-10-17 | 2017-05-24 | 宁夏协鑫晶体科技发展有限公司 | Shorten single crystal growing furnace melt time device |
-
2016
- 2016-10-17 CN CN201610901227.2A patent/CN106222737A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001010892A (en) * | 1999-06-22 | 2001-01-16 | Mitsubishi Materials Silicon Corp | Method for melting polycrystalline silicon for silicon single crystal pulling device |
| CN101240444A (en) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | Method and device for manufacturing silica semiconductor wafer |
| CN104583467A (en) * | 2013-06-21 | 2015-04-29 | Lg矽得荣株式会社 | Silicon single crystal growing device and method of growing same |
| CN206188921U (en) * | 2016-10-17 | 2017-05-24 | 宁夏协鑫晶体科技发展有限公司 | Shorten single crystal growing furnace melt time device |
Non-Patent Citations (1)
| Title |
|---|
| 姜洪舟主编: "《无机非金属材料热工设备》", 28 February 2015, 武汉理工大学出版社 * |
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Application publication date: 20161214 |