CN206070038U - A kind of crystal growth by flux method platinum crucible cover - Google Patents

A kind of crystal growth by flux method platinum crucible cover Download PDF

Info

Publication number
CN206070038U
CN206070038U CN201621042412.2U CN201621042412U CN206070038U CN 206070038 U CN206070038 U CN 206070038U CN 201621042412 U CN201621042412 U CN 201621042412U CN 206070038 U CN206070038 U CN 206070038U
Authority
CN
China
Prior art keywords
capping
platinum crucible
crucible cover
crystal growth
flux method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201621042412.2U
Other languages
Chinese (zh)
Inventor
李百中
李铮
施振华
刘有臣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Optics and Fine Mechanics of CAS
Original Assignee
Shanghai Institute of Optics and Fine Mechanics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Optics and Fine Mechanics of CAS filed Critical Shanghai Institute of Optics and Fine Mechanics of CAS
Priority to CN201621042412.2U priority Critical patent/CN206070038U/en
Application granted granted Critical
Publication of CN206070038U publication Critical patent/CN206070038U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The utility model discloses a kind of crystal growth by flux method platinum crucible cover, the platinum crucible cover includes cover rim, circular capping and the circular hole concentric with capping.At the edge of capping, straight down, length range is 3mm~20mm to the cover rim;The circular lid face has certain radian, and the circular capping is 5 °~45 ° with the angular range of horizontal plane, and diameter range is 60mm~200mm;The circular hole is concentric with capping, and Circularhole diameter scope is 15mm~30mm, and the circular has an outer wall of certain altitude, and the altitude range of outer wall is 3mm~10mm;The platinum crucible cover thickness range is 0.3mm~2mm.This utility model is applied to the thermograde regulation and control during crystal growth by flux method, while being effectively reduced pollution of the volatile matter to melt in insulation material and melt, it is ensured that the purity of melt.

Description

A kind of crystal growth by flux method platinum crucible cover
Technical field
This utility model is related to crystal growth by flux method equipment technical field, more particularly to a kind of life of flux growth metrhod crystal Length platinum crucible cover.
Background technology
Many crystal just had begun to decompose before intensification is also not up to fusing point, therefore can not use melt method direct growth This crystalloid, for this crystal-like growth, generally using flux growth metrhod.Flux growth metrhod is to grow a kind of important side of crystal Method, it is that crystal (as solute) is dissolved in flux at a temperature of far below fusing point, forms uniform and stable high temperature Solution, by slow cooling, forms supersaturated solution, and under the driving of degree of supersaturation, crystal is slowly constantly analysed on seed crystal Go out.Using flux growth metrhod, successful growth has gone out a series of nonlinear optical crystals, such as KTiOPO to people4(KTP)、 RbTiOPO4(RTP)、KTiOAsO4(KTA)、RbTiOAsO4(RTA)、β-BaB2O4(BBO)、LiB3O5(LBO)、CsLiB6O10 (CLBO)、K2Al2B2O7(KABO)、KBe2BO3F2(KBBF)、BaAlBO3F2(BABF) etc..
Crystal growth by flux method stove winds resistance wire generally using two-layer ceramic sleeve pipe outside inner sleeve as burner hearth Used as heater element, burner hearth is placed in a rustless steel furnace shell, bottom pad insulating brick, and fire resistant heat preserving cotton is filled around trocar sheath, Electric furnace heating wire is separated by trocar sheath with heat-preservation cotton, is prevented because electric furnace heating wire is contacted with heat-preservation cotton and the heating of caused electric furnace heating wire is unstable. Stockhole adds insulating brick to build thermograde appropriate in burner hearth, and platinum crucible is placed on inside burner hearth, can be according to actual need Increase or decrease pad brick to adjust crucible in the position of vertical direction.When crystal being grown with flux growth metrhod require there is less Longitudinally and radially thermograde, and bath surface is contacted with air, the convection current of air causes bath surface temperature to reduce, and causes Bath surface is larger with melt internal temperature gradient, is easy to produce " drift is brilliant " or in crucible internal walls melt and sky in bath surface Gas intersection produces parasitic nucleation, has a strong impact on the growth of crystal.The insulating brick of stockhole typically by resistant to elevated temperatures aluminium oxide or Zirconium oxide is prepared from, and in crystal growing process, stockhole insulating brick inevitably has some aluminium oxidies or zirconium oxide Particle detachment falls into melt;In addition, the low-boiling point material in melt also can constantly volatilize and then crystallize on stockhole insulating brick Get off, slowly corrode after insulating brick causes insulating brick " decortication " and melt is fallen into crystal.After these impurity enter melt, Especially easily cause new crystalline temperature at the crystal growth initial stage, these new crystalline temperatures compete life in the melt together with crystal It is long, cause plane of crystal because crystallizing generation that is uneven and easily causing inclusion enclave, when serious, cause crystal growth to fail;Drop These impurity elements into melt can also be in the form of dopant ion into the lattice for growing crystal, so as to reduce crystal Purity, affects crystal property.
At present, during crystal growth by flux method, typically do not use crucible cover or be utilized in mouth of pot and add a cover one Individual platinum flat board annulus cover plate, this platinum flat board annulus cover plate typically have larger circular hole, although can reduce in crucible The probability of parasitic nucleation is produced at wall melt and air interface, but during crystal growth by flux method, it is impossible to effectively keep away Exempt from pollution of the impurity on stockhole insulating brick to melt.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of crystal growth by flux method platinum crucible cover, energy It is enough effectively to reduce volatile matter in stockhole insulating brick and melt and come off the pollution to melt;Meanwhile, the radian folder of circular capping Angle arranges the thermograde of solid liquid interface when crucible face can be made to adjust crystal growth as heat radiation shield, so as to reach significantly Improve crystal yield rate, improve the effect of crystals quality in ground.
To solve above-mentioned technical problem, technical solution of the present utility model is as follows:
A kind of crystal growth by flux method platinum crucible cover, its feature are that the platinum crucible cover includes cover rim, circle The capping of shape and the circular hole concentric with capping, the cover rim are centered around the edge of the capping, and straight down, the capping is It is circular, and there is downwards certain radian, be provided with manhole at the center of the capping, the excircle of the through hole is provided with outer wall.
Preferably, the capping and the angle of horizontal plane are 5 °~45 °, a diameter of 60mm~200mm.
Preferably, a diameter of 15mm~30mm of the through hole.
Preferably, the height of the outer wall is 3mm~10mm.
Preferably, the height of the cover rim is 3mm~20mm.
Preferably, the thickness of the crucible cover is 0.3mm~2mm.
Compared with prior art, the beneficial effects of the utility model are:This utility model platinum crucible cover, before crystal growth Crucible cover circular hole outer wall is clamped with Crucible tongss platinum crucible cover to be covered on platinum crucible, cover rim blocks platinum crucible, makes platinum Crucible cover is not easy " sideslip ", and the radian angle of circular capping is arranged can make crucible face adjust crystal life as heat radiation shield The thermograde of solid liquid interface when long, while reduce volatile matter in stockhole insulating brick and melt come off the pollution to melt, from And reach the effect for improving crystal yield rate, improving crystals quality.
Description of the drawings
Fig. 1 is the axonometric chart of this utility model embodiment;
Fig. 2 is the front view of this utility model embodiment;
Fig. 3 is the upward view of this utility model embodiment;
Specific embodiment
Below in conjunction with the accompanying drawings preferred embodiment of the present utility model is described in detail, so that advantage of the present utility model It is easier to be understood by this area scientific and technical personnel with feature, it is apparent clear and definite so as to make to protection domain of the present utility model Define.
As shown in Figures 1 to 3, a kind of crystal growth by flux method platinum crucible cover, including cover rim 1, circular 2 and of capping The circular hole 3 concentric with capping.At the edge of capping 2, straight down, length range is 3mm~20mm to the cover rim 1;The circle Shape capping 2 has certain radian, and the circular capping 2 is 5 °~45 ° with the angular range of horizontal plane, and diameter range is 60~ 200mm;The circular hole 3 is concentric with capping 2, and 3 diameter range of circular hole is 15mm~30mm, has certain altitude around the circular hole 3 Outer wall 4, the altitude range of outer wall 4 is 3mm~10mm;The platinum crucible cover thickness range is 0.3mm~2mm.
The course of work of this utility model platinum crucible cover is as follows:Before crystal growth, crucible cover circular hole is clamped with Crucible tongss Outer wall covers platinum crucible cover on platinum crucible, and cover rim blocks platinum crucible.According to actual process, suitable temperature is selected, Seed crystal is touched into melt from the slow test of crucible cover circular hole, suitable crystalline substance rotary speed and cooling process is set, is started growth brilliant Body.This utility model platinum crucible cover is applied to the growth of flux growth metrhod crystal and prepares, and the radian angle of circular capping is arranged can So that crucible face as heat radiation shield adjust crystal growth when solid liquid interface thermograde and reduce stockhole insulating brick and In melt, volatile matter comes off the pollution to melt, so as to reach the effect for improving crystal yield rate, improving crystals quality.
Embodiment of the present utility model is the foregoing is only, interest field of the present utility model is not thereby limited.It is aobvious and It is clear to, any to the embodiment associated change or change that those skilled in the art are made, all without beyond this The design of utility model and the protection domain of claims.

Claims (6)

1. a kind of crystal growth by flux method platinum crucible cover, it is characterised in that the platinum crucible cover includes cover rim, circle Capping and the circular hole concentric with capping, the cover rim is centered around the edge of the capping, and straight down, the capping is circle Shape and downwards have certain radian, be provided with manhole at the center of the capping, the excircle of the through hole is provided with outer wall.
2. a kind of crystal growth by flux method platinum crucible cover as claimed in claim 1, it is characterised in that the capping with The angle of horizontal plane is 5 °~45 °, a diameter of 60mm~200mm.
3. a kind of crystal growth by flux method platinum crucible cover as claimed in claim 1, it is characterised in that the through hole A diameter of 15mm~30mm.
4. a kind of crystal growth by flux method platinum crucible cover as claimed in claim 1, it is characterised in that the outer wall Highly it is 3mm~10mm.
5. a kind of crystal growth by flux method platinum crucible cover as claimed in claim 1, it is characterised in that the cover rim Highly it is 3mm~20mm.
6. a kind of crystal growth by flux method platinum crucible cover as described in any one of Claims 1 to 5, it is characterised in that The thickness of the crucible cover is 0.3mm~2mm.
CN201621042412.2U 2016-09-08 2016-09-08 A kind of crystal growth by flux method platinum crucible cover Active CN206070038U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201621042412.2U CN206070038U (en) 2016-09-08 2016-09-08 A kind of crystal growth by flux method platinum crucible cover

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201621042412.2U CN206070038U (en) 2016-09-08 2016-09-08 A kind of crystal growth by flux method platinum crucible cover

Publications (1)

Publication Number Publication Date
CN206070038U true CN206070038U (en) 2017-04-05

Family

ID=58437201

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201621042412.2U Active CN206070038U (en) 2016-09-08 2016-09-08 A kind of crystal growth by flux method platinum crucible cover

Country Status (1)

Country Link
CN (1) CN206070038U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114875473A (en) * 2022-05-30 2022-08-09 福建福晶科技股份有限公司 Crystal preparation method for improving KGW crystal quality and utilization rate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114875473A (en) * 2022-05-30 2022-08-09 福建福晶科技股份有限公司 Crystal preparation method for improving KGW crystal quality and utilization rate
CN114875473B (en) * 2022-05-30 2023-11-14 福建福晶科技股份有限公司 Crystal preparation method for improving KGW crystal quality and utilization rate

Similar Documents

Publication Publication Date Title
CN104047047B (en) A kind of horizontal growth device of phosphorus silicon Cd monocrystal and growing method
CN105970295B (en) A kind of device and method of liquid phase method growth carborundum crystals
JPH02133389A (en) Production device of silicon single crystal
CN101445954A (en) Method for controlling temperature gradient and thermal history of a crystal-melt interface in growth process of czochralski silicon monocrystal
CN105696078A (en) Preparation method of lithium tantalate monocrystal
CN206070038U (en) A kind of crystal growth by flux method platinum crucible cover
CN105970290B (en) A kind of effective grower for inhibiting gallium oxide crystal defect
CN104264213A (en) EFG (edge-defined film-fed growth) device of large-size doped sapphire crystals and growth process thereof
JP6853445B2 (en) Heater insulation structure and single crystal manufacturing equipment
CN205856654U (en) The effectively grower of inhibited oxidation gallium crystal defect
CN100494513C (en) Fluxing agent growth method for trigallium phosphate crystal
CN207244045U (en) A kind of Czochralski grown tellurium oxide crystal frock
JP2019127411A (en) Method for making single domain of lithium niobate monocrystal
CN205839183U (en) A kind of device preparing gem crystal
CN205241851U (en) Single crystal furnace heating system
JP2018111633A (en) Apparatus and method for growing oxide single crystal
CN106958041B (en) A kind of xTeO2·P2O5(x=2,4) preparation method and preparation facilities of crystal
US8691013B2 (en) Feed tool for shielding a portion of a crystal puller
CN206359658U (en) A kind of heavy duty detergent ingot furnace
CN204356436U (en) The surplus material of a kind of crystal growing crucible is from bleeder
JP7396183B2 (en) Heat-resistant container used for single-segmentation treatment of oxide single crystal and method for single-segmentation treatment of oxide single crystal
JPH01317188A (en) Production of single crystal of semiconductor and device therefor
JP7275674B2 (en) Method for growing lithium niobate single crystal
JPH02172885A (en) Production of silicon single crystal
WO2014073165A1 (en) Single crystal producing apparatus

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant