CN205856654U - The effectively grower of inhibited oxidation gallium crystal defect - Google Patents
The effectively grower of inhibited oxidation gallium crystal defect Download PDFInfo
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- CN205856654U CN205856654U CN201620817453.8U CN201620817453U CN205856654U CN 205856654 U CN205856654 U CN 205856654U CN 201620817453 U CN201620817453 U CN 201620817453U CN 205856654 U CN205856654 U CN 205856654U
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- iridium
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- crucible
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Abstract
The utility model discloses the grower of a kind of effective inhibited oxidation gallium crystal defect.This device includes constituting multiple thermal field components in single crystal growing furnace, multiple thermal field component levels and concentricity installation；Thermal field center is embedded with heater and iridium crucible, circular induction coil heat, and heater separates with iridium crucible, leaves gap between the two；Thermal field component includes the zirconium oxide inside holding cylinder for supporting iridium radiation shield；Cover the top heat preservation component on iridium radiation shield, it leaves seed rod entrance；Middle part heat preservation component around zirconium oxide inside holding cylinder；Around iridium crucible and the bottom heat preservation component of heater.This device is designed to reduce the loss of iridium crucible, effectively suppress the content of crystals impurity element, it is thus possible to suppress matter crystal internal defect well, extending pot life, for realizing large-scale production high-quality, the gallium oxide single crystal of low cost lays a good foundation.
Description
Technical field
This utility model relates to crystal material growth technology, particularly relates to a kind of effective inhibited oxidation gallium crystal defect
Grower.
Background technology
Gallium oxide material energy gap is 4.9eV, in dark purple outskirt transmitance up to about 80%, can be used for making ultraviolet
Laser instrument, various sensor elements and imaging apparatus.It addition, its breakdown field strength is about more than 20 times of Si, with SiC and
GaN compares, and uses gallium oxide material can produce high pressure and low-loss power semiconductor, is a kind of up-and-coming
Broad stopband oxide semiconductor material.But, gallium oxide fusing point higher (1740-1820 DEG C), volatile and decomposition, simultaneously to earthenware
Crucible corrosion is more serious, thus is readily incorporated impurity in crystal growing process, produces more defect.Owing to gallium oxide fusing point is high,
And readily volatilized and decomposition near fusing point, therefore, growing large-size monocrystalline is extremely difficult.At present, domestic employing EFG technique
Prepare gallium oxide crystal full-size and be only 1 inch, it is impossible to enough meet the device requirement to large-sized substrate.Typically grow oxidation
Gallium crystal uses EFG technique or czochralski method, and owing to gallium oxide melt corrosivity is strong, growing environment is the harshest.
The most general mode using sensing heating iridium crucible grows gallium oxide crystal.But, this mode of heating is to iridium
Crucible loss is big, and irida matter can be made to mix in crystal in a large number, so that matter crystal internal defect increases.Therefore, to oxygen
Change gallium crystal growing apparatus to have higher requirement: need to reduce the loss to iridium crucible, reduce the incorporation of impurity element, from
And effectively suppress the generation of crystal defect.
Summary of the invention
The problem existed for prior art, the purpose of this utility model is: in gallium oxide crystal growing process
The mode using sensing heating iridium crucible causes producing substantial amounts of defect in crystal, it is provided that a kind of effective suppression crystal defect
Grower.
For achieving the above object, this utility model adopts the technical scheme that: a kind of effectively inhibited oxidation gallium crystal defect
Grower, it is characterised in that this device includes constituting in single crystal growing furnace for protecting multiple thermal field components of mild heat thermal field,
Multiple thermal field component levels and concentricity installation；Thermal field center is embedded with heater and iridium crucible, by circular induction coil simultaneously
Heating heater and iridium crucible, heater separates with iridium crucible, leaves gap between the two；Thermal field component includes using
In the zirconium oxide inside holding cylinder of support iridium radiation shield, zirconium oxide inside holding cylinder is positioned on heater, heater support；Including
Cover the top heat preservation component on iridium radiation shield, it leaves seed rod entrance；Including around zirconium oxide inside holding cylinder
Middle part heat preservation component；Also include around iridium crucible and the bottom heat preservation component of heater；The purity of each thermal field component material is
More than 99.7%.
This utility model produces and provides the benefit that: this device is designed to reduce the loss of iridium crucible, effectively suppresses brilliant
The content of internal portion impurity element such that it is able to suppress matter crystal internal defect well, extends pot life, big for realizing
Large-scale production high-quality, the gallium oxide single crystal of low cost are laid a good foundation.
This utility model has the advantage that
A. the mode using induction heating body can be substantially reduced the infringement to iridium crucible, extends crucible and uses the longevity
Life.
B. can effectively reduce in iridium crucible in iridium incorporation crystal, thus inhibit the generation of matter crystal internal defect.
C. heater separates with iridium crucible, can support zirconium oxide inside holding cylinder and be prevented from portion of external impurity
Enter raw material.
D. heater external diameter is φ 55-100mm, and iridium crucible external diameter is φ 40-80mm, can grow 1 inch to 2 inches oxygen
Change gallium crystal.
Accompanying drawing explanation
Fig. 1 is the grower schematic diagram of effective inhibited oxidation gallium crystal defect；
Fig. 2 is the generalized section that in Fig. 1, zirconium oxide inside holding cylinder amplifies；
Fig. 3 is the schematic top plan view that in Fig. 1, iridium radiation shield amplifies.
Detailed description of the invention
Below in conjunction with drawings and Examples, the utility model is described in further detail:
With reference to Fig. 1, Fig. 2 and Fig. 3, it is interior for protecting multiple thermal field portions of mild heat thermal field that this device includes constituting single crystal growing furnace
Part, multiple thermal field component levels and concentricity installation；Thermal field center is embedded with heater 8 and iridium crucible 7, by circular induction coil
Heater 8 and iridium crucible 7 are heated by 10 simultaneously, and heater 8 separates with iridium crucible 7, leaves gap between the two；Thermal field
Parts include the zirconium oxide inside holding cylinder 4 for supporting iridium radiation shield 9, and zirconium oxide inside holding cylinder 4 is positioned on heater 8, by
Heater 8 supports；Including the top heat preservation component 2 covered on iridium radiation shield 9, it leaves seed rod entrance 1；Including ring
Middle part heat preservation component 3 around zirconium oxide inside holding cylinder 4；Also include around iridium crucible 7 and the bottom heat preservation component 6 of heater 8；Respectively
The purity of thermal field component material is more than 99.7%.
The top heat preservation component 2 of this device, middle part heat preservation component 3 and bottom heat preservation component 6 are 25-50mm's by thickness
Zirconium oxide fiber board is constituted.
Zirconium oxide inside holding cylinder 4 thickness of this device is 6-12mm, and external diameter is 64-110mm, and height is 40-100mm, its
A little groove 4-1 is opened in upper end, is used for placing iridium radiation shield 9, and depth of groove is 2.5-5mm.
The sidewall of the zirconium oxide inside holding cylinder 4 of this device be provided be inclined upwardly and connect with middle part heat preservation component 3 can
Window 5.
The iridium radiation shield 9 of this device is shaped as the iridium disk of center drilling and makes, and thickness is 2.5-4mm, a diameter of 60-
110mm, a diameter of 35-60mm of central small hole 9-1, and connect with seed rod entrance 1；Iridium radiation shield 9 is positioned at directly over iridium crucible 7
50-150mm。
The iridium crucible 7 of this device is circular crucible, and external diameter is φ 40-85mm, and wall thickness is 2-4mm, and height is 40-70mm,
Described iridium crucible 7 is made up of the metal iridium that purity is 99.9%.
The thermocouple 11 of thermometric it is provided for bottom the iridium crucible 7 of this device.
It is provided for supporting the zirconium oxide pad 12 of iridium crucible bottom the iridium crucible 7 of this device.
The heater 8 of this device is cylindric, and external diameter is φ 55-100mm, upper and lower opening, wall thickness 5-7mm, and height is 55-
90mm, is prepared by metal iridium or resistance to oxidation, high temperature resistant conductivity ceramics.
The preparation material purity of the iridium crucible 7 of this device, heater 8 and iridium radiation shield 9 is 99.95-99.999%.
Embodiment: this utility model provides the grower design of a kind of effective inhibited oxidation gallium crystal defect, simultaneously
It is applicable for use with EFG technique or Czochralski grown large scale gallium oxide crystal.Specifically can use following steps:
First, installing in single crystal growing furnace and protect mild heat thermal field component, thermal field component includes being made up of zirconium oxide fiber board
The bottom heat preservation component 6 around heater 8, iridium crucible 7, zirconium oxide inside holding cylinder 4 passive to iridium radiation shield 9,
The top heat preservation component 2 being made up of zirconium oxide fiber board and middle part heat preservation component 3, iridium radiation shield 9 and cincture heat preservation structural component group
Circular induction coil 10.The purity of each thermal field component material is above 99.7%.
Heater 8 separates with iridium crucible 7, thus realize heater 8 to the support of zirconium oxide inside holding cylinder 4 and preventing outside
Carry out the effect of impurity.Heater 8 is cylindric, and material is prepared by metal iridium, and heater external diameter is φ 100mm, wall thickness 5mm, high
Degree is 60mm.Iridium crucible 7 is circular, and crucible external diameter is φ 84mm, and wall thickness is 3mm, and height is 40mm.
For the ease of real-time monitored crystal growth condition, at middle part heat preservation component 3(zirconium oxide fiber board) and zirconium oxide in
One group of window 5 is offered on heat-preservation cylinder 4.The shape in hole does not limits, and can be oval alternatively rectangle.The direction of viewing hole 5 with
Horizontal direction is that 50 degree of angles are inclined upwardly, to obtain optimal observation angle.
In order to reduce in single crystal growing furnace axially and radially thermograde, in suppression crystal growing process cracking, cleavage and
Polymorphism, directly over iridium crucible, the circular iridium radiation shield 9 of center drilling is installed in 80mm position, and iridium radiation shield 9 thickness is
3mm, a diameter of 106mm, a diameter of 35mm of iridium radiation shield 9 central small hole 9-1, and connect with seed rod entrance 1.
For the ease of fixing iridium radiation shield 9, using the zirconium oxide heat-preservation cylinder 4 of upper end recessing, zirconium oxide inside holding cylinder 4 is thick
Degree is 6mm, and external diameter is 110mm, and height is 75mm, and a little groove 4-1 is opened in upper end, and depth of groove is 5mm.
In order to monitor crystal growth temperature, point for measuring temperature-thermocouple 11 is set bottom iridium crucible 7, in order to whole crystal
Growth course carries out real time temperature monitoring.
The preferred 99.95-99.999% of preparation material purity of above-mentioned iridium crucible 7, heater 8 and iridium radiation shield 9.
In above-mentioned single crystal growing furnace, thermal field design is suitable for 2 inch oxidized gallium crystal growth.
Claims (10)
1. the grower of an effective inhibited oxidation gallium crystal defect, it is characterised in that this device includes constituting in single crystal growing furnace
For protecting multiple thermal field components of mild heat thermal field, multiple thermal field component levels and concentricity installation；Thermal field center is embedded with
Heater (8) and iridium crucible (7), heated heater (8) and iridium crucible (7) by circular induction coil (10) simultaneously,
Heater (8) separates with iridium crucible (7), leaves gap between the two；Thermal field component includes the oxygen for supporting iridium radiation shield (9)
Changing zirconium inside holding cylinder (4), zirconium oxide inside holding cylinder (4) is positioned on heater (8), heater (8) support；Including covering
Top heat preservation component (2) on iridium radiation shield (9), it leaves seed rod entrance (1)；Including around zirconium oxide inside holding cylinder
(4) middle part heat preservation component (3)；Also include around iridium crucible (7) and the bottom heat preservation component (6) of heater (8)；Each thermal field portion
The purity of part material is more than 99.7%.
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 1, it is characterised in that described is upper
Portion's heat preservation component (2), middle part heat preservation component (3) and bottom heat preservation component (6) are the zirconium oxide fiber board of 25-50mm by thickness
Constitute.
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 1, it is characterised in that described oxygen
Changing zirconium inside holding cylinder (4) thickness is 6-12mm, and external diameter is 64-110mm, and height is 40-100mm, and a little groove (4-is opened in its upper end
1), being used for placing iridium radiation shield (9), depth of groove is 2.5-5mm.
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 3, it is characterised in that described
The sidewall of zirconium oxide inside holding cylinder (4) is provided with the viewing hole (5) being inclined upwardly and connecting with middle part heat preservation component (3).
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 1, it is characterised in that described iridium
Radiation shield (9) is shaped as the iridium disk of center drilling and makes, and thickness is 2.5-4mm, a diameter of 60-110mm, central small hole (9-
1) a diameter of 35-60mm, and connect with seed rod entrance (1)；Iridium radiation shield (9) is positioned at 50-directly over described iridium crucible (7)
150mm。
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 1, it is characterised in that described iridium
Crucible (7) is circular crucible, and external diameter is φ 40-85mm, and wall thickness is 2-4mm, and height is 40-70mm, described iridium crucible (7) by
Purity be 99.9% metal iridium make.
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 6, it is characterised in that described iridium
Crucible (7) bottom is provided for the thermocouple (11) of thermometric.
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 7, it is characterised in that described iridium
Crucible (7) bottom is provided for supporting the zirconium oxide pad (12) of iridium crucible.
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 1, it is characterised in that described sends out
Hot body (8) is cylindric, and external diameter is φ 55-100mm, upper and lower opening, wall thickness 5-7mm, and height is 55-90mm, by metal iridium or
Prepared by person's resistance to oxidation, high temperature resistant conductivity ceramics.
The grower of effective inhibited oxidation gallium crystal defect the most according to claim 1, it is characterised in that described
The preparation material purity of iridium crucible (7), heater (8) and iridium radiation shield (9) is 99.95-99.999%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620817453.8U CN205856654U (en) | 2016-08-01 | 2016-08-01 | The effectively grower of inhibited oxidation gallium crystal defect |
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| CN201620817453.8U CN205856654U (en) | 2016-08-01 | 2016-08-01 | The effectively grower of inhibited oxidation gallium crystal defect |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105970290A (en) * | 2016-08-01 | 2016-09-28 | 中国电子科技集团公司第四十六研究所 | Grower for effectively restraining gallium oxide crystal defects |
| CN114059162A (en) * | 2022-01-14 | 2022-02-18 | 浙江大学杭州国际科创中心 | Gallium oxide crystal growth device and crystal growth method |
| WO2022141758A1 (en) * | 2020-12-31 | 2022-07-07 | 杭州富加镓业科技有限公司 | High-resistance gallium oxide mass prediction method, and preparation method and system based on deep learning and czochralski method |
-
2016
- 2016-08-01 CN CN201620817453.8U patent/CN205856654U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105970290A (en) * | 2016-08-01 | 2016-09-28 | 中国电子科技集团公司第四十六研究所 | Grower for effectively restraining gallium oxide crystal defects |
| CN105970290B (en) * | 2016-08-01 | 2019-03-08 | 中国电子科技集团公司第四十六研究所 | A kind of effective grower for inhibiting gallium oxide crystal defect |
| WO2022141758A1 (en) * | 2020-12-31 | 2022-07-07 | 杭州富加镓业科技有限公司 | High-resistance gallium oxide mass prediction method, and preparation method and system based on deep learning and czochralski method |
| US12031230B2 (en) | 2020-12-31 | 2024-07-09 | Hangzhou Fujia Gallium Technology Co. Ltd. | Quality prediction method, preparation method and system of high resistance gallium oxide based on deep learning and Czochralski method |
| CN114059162A (en) * | 2022-01-14 | 2022-02-18 | 浙江大学杭州国际科创中心 | Gallium oxide crystal growth device and crystal growth method |
| CN114059162B (en) * | 2022-01-14 | 2022-05-13 | 浙江大学杭州国际科创中心 | Gallium oxide crystal growth device and crystal growth method |
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