CN205692835U - Enhancement mode self-supporting vertical stratification III group-III nitride HEMT device and AlGaN/GaN HEMT device - Google Patents
Enhancement mode self-supporting vertical stratification III group-III nitride HEMT device and AlGaN/GaN HEMT device Download PDFInfo
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Abstract
The utility model discloses a kind of enhancement mode self-supporting vertical stratification III group-III nitride HEMT device and AlGaN/GaN HEMT device.In a preferred embodiment, described HEMT device includes N polarity epitaxial structure, described N polarity epitaxial structure includes current barrier layer, the first AlGaN layer of N polarity, N polarity intrinsic GaN layer and the second AlGaN layer of N polarity being sequentially formed on substrate, described substrate, intrinsic GaN layer form Ohmic contact with drain electrode, source electrode respectively, described grid is arranged in the second AlGaN layer, the current lead-through passage that vertically run through current barrier layer is distributed in described current barrier layer, and the resistivity of described current lead-through passage is less than described current barrier layer.The enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device that this utility model provides has vertical stratification, is simultaneously achieved enhancement mode, also has the advantages such as high pressure, Low dark curient, and its preparation technology is simple, easily operated, low cost, beneficially industrialized production.
Description
Technical field
This utility model relates to a kind of enhancement mode HEMT device, particularly to a kind of enhancement mode self-supporting vertical stratification III race
Nitride (such as AlGaN/GaN) HEMT device and preparation method thereof, belongs to microelectronics technology.
Background technology
Khan in 1993 et al. produces first GaN base metal-semiconductor field effect transistor (MESFET) AlGaN/
GaN HEMT (HEMT), its horizontal structure, AlGaN/GaN performance, energy consumption and the figure of merit etc. are superior to Si device
Part.But still there are some problems and govern the commercialization process of GaN device, such as AlGaN/GaN HFET is inclined at big grid
There will be current collapse effect under pressure or high frequency condition, can produce under AlGaN/GaN HFET is operated in high temperature, high-power environment
Raw " self-heating effect ", reduces the microwave power characteristic of device, and is not easy to the compatible very poor problem of Si power-type device.
In order to meet the requirements such as different rated power, switching frequency and gain, Si based power type device is from bipolar transistor, brilliant lock
Pipe, bipolar transistor, MOSHFET and the IGBT developed finally.The electric current transmission direction of Si based power type device is from water
Square to the transmission to vertical direction, and this transmission mode is provided convenience for the commercialization such as encapsulation of device afterwards.
The trend that AlGaN/GaN HEMT device develops from horizontal type structure to vertical type structure.
But consumption vertical-type AlGaN/GaN HEMT device also exists the technological difficulties that relatively difficulty is disconnected, and enhancement mode is vertical
Type AlGaN/GaN HEMT device can solve this problem.It addition, when HEMT device is applied in high-power switching circuit,
In order to the design of circuit is simple and secure context considers, typically require that switching device has the normally off characteristic and i.e. needs device to be enhancing
Type device.
For horizontal device, the conventional method realizing enhancement mode HEMT device have thin barrier layer, p-type grid structure,
Notched gates structure, fluoro plasma process and fluorion injection technique.These several technology all have certain defect: thin barrier layer is not
Using etching technics, so the damage brought is little, but due to relatively thin barrier layer, the saturation current of device is less；Recessed grid are tied
Structure solves the problem that saturation current is less, but among general HEMT device, barrier layer only has 20-30nm, uses etching work
Skill forms the technique of recessed grid structure and is difficult to control, and repeatability is poor and p-type cap produces interfacial state, affects stablizing of device
Property；F plasma treatment also can realize enhancement mode HEMT device, and need not etching, but during injecting F ion, by
In the existence of plasma, the phenomenon of etching barrier layer can be produced, and owing to plasma existing different kinds of ions, in experiment
Middle control is more difficult, if directly using ion implantation apparatus that F ion is injected into barrier layer, owing to barrier layer only has 20-30nm left
The right side, and the Implantation Energy of general ion implantation apparatus is higher, buffers so the F ion injected enters GaN by barrier layer AlGaN
Layer, the mobility having a strong impact on two-dimensional electron gas makes device when opening, and source-drain current is less.Same, for hanging down
For straight device, it equally exists these defects aforesaid.
Summary of the invention
Main purpose of the present utility model is to provide a kind of enhancement mode self-supporting vertical stratification III group-III nitride HEMT device
Part and preparation method thereof, to overcome deficiency of the prior art.
For realizing aforementioned invention purpose, the technical solution adopted in the utility model includes:
This utility model embodiment provides a kind of enhancement mode self-supporting vertical stratification III group-III nitride HEMT device, its bag
Including N polarity or P polarity epitaxial structure and source electrode, drain and gate, described epitaxial structure includes being sequentially formed in from bottom to top
The current barrier layer of the first surface of substrate, heterojunction structure and the 3rd quasiconductor, described heterojunction structure is mainly by the first quasiconductor
Formed with the second quasiconductor, and in described heterojunction structure, be formed with two-dimensional electron gas, described substrate with first surface back to
Second surface and drain electrode form Ohmic contact, described second quasiconductor and source electrode form Ohmic contact, and described grid is arranged on
On 3rd quasiconductor, current lead-through passage being distributed in described current barrier layer, described current lead-through passage vertically passes through
Wear described current barrier layer, and the resistivity of described current lead-through passage is less than described current barrier layer, wherein said the first half
Conductor, the second quasiconductor and the 3rd semiconductor equalizing are N polarity, and described first quasiconductor, the second quasiconductor and the 3rd half are led
Body is selected from III group-III nitride semiconductor.
This utility model embodiment additionally provides a kind of enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device, its
Including N polarity epitaxial structure and source electrode, drain and gate, described N polarity epitaxial structure includes being sequentially formed in from bottom to top
The current barrier layer of the first surface of substrate, the first AlGaN layer of N polarity, N polarity intrinsic GaN layer and the second of N polarity
AlGaN layer, described substrate with first surface back to second surface and drain electrode formed Ohmic contact, described intrinsic GaN layer
Forming Ohmic contact with source electrode, described grid is arranged in the second AlGaN layer, current lead-through is distributed in described current barrier layer
Passage, described current lead-through passage vertically runs through described current barrier layer, and the resistivity of described current lead-through passage
Less than described current barrier layer.
This utility model embodiment additionally provides one and prepares described enhancement mode self-supporting vertical stratification AlGaN/GaN
The method of HEMT device, comprising:
There is provided have back to first surface and the substrate of second surface；
First surface at described substrate grows and forms current barrier layer, and enters at the selection area of described current barrier layer
Row n-type doping, thus in described current barrier layer, form the current lead-through passage vertically running through current barrier layer, and
The resistivity of described current lead-through passage is less than described current barrier layer；
On described current barrier layer, growth forms the first AlGaN layer of N polarity, N polarity intrinsic GaN layer and N polarity
Second AlGaN layer；
Etch described second AlGaN layer, and only make the second AlGaN layer being positioned at region under grid remaining；
It is processed to form source electrode and the leakage forming Ohmic contact respectively with the second surface of described intrinsic GaN layer and described substrate
Electrode；
And, it is processed to form and the grid of the second AlGaN layer formation Schottky contacts.
Compared with prior art, advantage of the present utility model includes:
(1) the enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device that this utility model provides is use N pole
Property III group-III nitride formed N polarity epitaxial structure, easily realize enhancement mode, the superiors AlGaN only under grid region exist, can make
Under grid, two-dimensional electron gas exhausts, thus realizes enhancement device, and it without the most harsh requirement, is beneficial to industry in terms of precision
Metaplasia is produced.
(2) more preferred, that this utility model provides enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device
Manufacture method can use high resistant GaN as current barrier layer, by utilizing the modes such as Si ion implanting to be formed in this high resistant GaN
Current lead-through passage, it is possible to achieve the vertical stratification AlGaN/GaN HEMT device of grid-control.Wherein, by use various dose and
The Si ion implanting of energy, can control to inject the degree of depth and doping content, more effectively realize the low resistance of current lead-through passage
Rate, to reach ON state and the shutoff of grid-control.
(3) more preferred, that this utility model provides enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device system
Make method can use SiO2Dielectric layers etc. are as current barrier layer, and its potential barrier that both can improve current barrier layer further is high
Degree, can utilize again the insulating properties that it is good to reduce vertical electric leakage.In addition compared with traditional barrier layer structure, this utility model profit
With based on graphical SiO2Deng epitaxial lateral overgrowth technology can obtain higher crystal mass, and only need an epitaxial growth, keep away
Exempt from more pollutions that secondary epitaxy growth is introduced, growth technique can have been simplified, reduce production cost.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, the accompanying drawing in describing below is only
It is some embodiments described in this utility model, for those of ordinary skill in the art, is not paying creative work
On the premise of, it is also possible to other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 is the outer sectional view delaying high resistant GaN layer in this utility model embodiment 1；
Fig. 2 is the sectional view being realized current lead-through through hole in this utility model embodiment 1 by Si ion implanting；
Fig. 3 is a kind of enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device in this utility model embodiment 1
Sectional view；
Fig. 4 is deposit SiO in this utility model embodiment 22Sectional view as current barrier layer；
Fig. 5 is to SiO in this utility model embodiment 22The sectional view of current barrier layer etching；
Fig. 6 is the section view of enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device in this utility model embodiment 2
Figure；
Description of reference numerals: drain electrode 1, N polar GaN substrate 2, current barrier layer 3, current barrier layer 3 ', current lead-through is led to
Road 4, N polarity AlGaN potential barrier 5, N polarity intrinsic GaN layer 6, Two-dimensional electron gas channel 7, N polarity AlGaN layer 8, source electrode 9, grid
Pole 10.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with the accompanying drawings to this utility model
Detailed description of the invention be described in detail.The example of these preferred implementations is illustrated in the accompanying drawings.Institute in accompanying drawing
The embodiment of the present utility model shown and describe with reference to the accompanying drawings is merely exemplary, and this utility model is not limited to this
A little embodiments.
Here, also, it should be noted in order to avoid having obscured this utility model because of unnecessary details, in the accompanying drawings
Illustrate only and according to the closely-related structure of scheme of the present utility model and/or process step, and eliminate and this practicality
Other details that new relationship is little.
A kind of enhancement mode self-supporting vertical stratification AlGaN/GaN that one aspect of this utility model embodiment provides
HEMT device includes that N polarity epitaxial structure and source electrode, drain and gate, described N polarity epitaxial structure include depending on from bottom to top
The current barrier layer of the secondary first surface being formed at substrate, the first AlGaN layer of N polarity, N polarity intrinsic GaN layer and N polarity
Second AlGaN layer, described substrate with first surface back to second surface and drain electrode formed Ohmic contact, described intrinsic
GaN layer forms Ohmic contact with source electrode, and described grid is arranged in the second AlGaN layer, electricity is distributed in described current barrier layer
Conductance circulation passage, described current lead-through passage vertically runs through described current barrier layer, and described current lead-through passage
Resistivity is less than described current barrier layer.
In enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device of the present utility model, utilize N polarity epitaxy junction
Structure has drawn high and can carry, so that two-dimensional electron gas exhausts under normality, device is off state.
The operation principle of enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device of the present utility model includes: work as device
Under part is in the conduction state, electronics from source electrode along two-dimensional electron gas channel pass, when in electric transmission to current lead-through through hole
Fang Shi, owing to current lead-through aisle resistance rate is relatively low, electronics transmits from Two-dimensional electron gas channel diverted current conductive channel, arrives
Reaching drain electrode, when grid voltage is zero, the two-dimensional electron gas below grid exhausts, and electric transmission is blocked, and at this moment device is in OFF state.
More preferred, described second AlGaN layer is only distributed in and is being positioned at the region immediately below grid.
Further, described second AlGaN layer can etch by delaying outward and formed, and its thickness is preferably greater than 0
And less than or equal to 30nm so that the two-dimensional electron gas under grid is depleted.
More preferred, described substrate is selected from N polar GaN self-supported substrate.
More preferred, the thickness of described first AlGaN layer (being also regarded as AlGaN potential barrier) more than 0 less than or
Equal to 30nm, reduce AlGaN electric leakage under two-dimensional electron gas the most as far as possible.
More preferred, the thickness of described intrinsic GaN layer is less than or equal to 50nm more than 0 so that device is to two dimension electricity
Edema of the legs during pregnancy has effective grid-control.
More preferred, form Schottky contacts between described second AlGaN layer and grid.
More preferred, described current lead-through passage is distributed only over the region being positioned at immediately below the second AlGaN layer.
More preferred, described current lead-through passage is by the selection area of current barrier layer carries out n-type doping
Formed.
It is for instance possible to use N polarity high resistant GaN layer is as the current barrier layer in epitaxial structure, and by electric current is hindered
The selection area of barrier carries out n-type doping by modes such as Si ion implantings, can form resistivity less than current barrier layer
Current lead-through passage (is also regarded as current lead-through through hole).
More preferred, described current lead-through passage can also be by performing etching the selection area of current barrier layer
Forming through hole, the first AlGaN layer of laterally overgrown N polarity on current barrier layer, makes AlGaN be packed into logical simultaneously afterwards
Hole and form resistivity less than the current lead-through passage of current barrier layer.That is, described current lead-through passage is by hindering at electric current
The conductive channel filling the AlGaN material of N polarity in through hole in barrier and formed.
More preferred, sealing coat is also distributed between the first AlGaN layer and intrinsic GaN layer.Wherein, described sealing coat
Material can be AlN etc., and its thickness can be preferably 1-5nm.
Such as, the AlN sealing coat that described sealing coat can use thickness to be 1-5nm, wherein, the existence one of AlN sealing coat
On the other hand aspect can increase AlGaN/GaN polarization, Si atom also can be suppressed in the diffusion of interface, and then improve AlGaN/
The two-dimensional electron gas of GaN.
The one that another aspect of this utility model embodiment provides makes described enhancement mode self-supporting vertical stratification
The method of AlGaN/GaN HEMT device includes:
There is provided have back to first surface and the substrate of second surface；
First surface at described substrate grows and forms current barrier layer, and enters at the selection area of described current barrier layer
Row n-type doping, thus in described current barrier layer, form the current lead-through passage vertically running through current barrier layer, and
The resistivity of described current lead-through passage is less than described current barrier layer；
On described current barrier layer, growth forms the first AlGaN layer of N polarity, N polarity intrinsic GaN layer and N polarity
Second AlGaN layer；
Etch described second AlGaN layer, and only make the second AlGaN layer being positioned at region under grid remaining；
It is processed to form source electrode and the leakage forming Ohmic contact respectively with the second surface of described intrinsic GaN layer and described substrate
Electrode；
And, it is processed to form and the grid of the second AlGaN layer formation Schottky contacts.
In some embodiments, described manufacture method includes: by using ion implanting mode to hinder described electric current
The selection area of barrier carries out n-type doping, thus forms described current lead-through passage.
In some embodiments, described manufacture method includes: the selection area of current barrier layer is performed etching shape
Becoming through hole, the first AlGaN layer of laterally overgrown N polarity on current barrier layer, makes AlGaN fill in the process afterwards
Enter through hole and form the resistivity current lead-through passage less than current barrier layer.
In some embodiments, described manufacture method includes: after the source of completing, drain electrode, uses ion note
The active area entering the mode device to being formed carries out mesa-isolated, carries out the making of grid afterwards.
In some more specific embodiment, described manufacture method includes but not limited to:
Substrate arranges N polarity high resistant GaN layer as the current barrier layer in epitaxial structure, and to current barrier layer
Selection area carries out N-shaped doping by Si ion implanting and forms the resistivity current lead-through through hole less than current barrier layer；With
And, described current barrier layer continues other structure sheaf of epitaxial growth, on the device formed, makes source, leakage, grid electricity afterwards
Pole.
In some more specific embodiment, described manufacture method includes but not limited to: arrange on substrate pGaN or
SiO2Dielectric layer is as the current barrier layer in epitaxial structure, and performs etching the selection area of current barrier layer, then enters
Row horizontal extension, continues epitaxy junction on described current barrier layer and grows other structure sheaf and form current lead-through passage, afterwards
The device formed makes source, leakage, gate electrode.
Further, this utility model the most also applies also for other enhancement mode HEMT device based on group III-nitride
Part.
Therefore, embodiment of the present utility model additionally provides a kind of enhancement mode self-supporting vertical stratification III group-III nitride HEMT
Device, it includes N polarity epitaxial structure and source electrode, drain and gate, and described epitaxial structure includes sequentially forming from bottom to top
In the current barrier layer of first surface, heterojunction structure and the 3rd quasiconductor of substrate, described heterojunction structure is mainly led by the first half
Body and the second quasiconductor are formed, and are formed with two-dimensional electron gas in described heterojunction structure, described substrate opposing with first surface
To second surface and drain electrode form Ohmic contact, described second quasiconductor and source electrode form Ohmic contact, and described grid is arranged
On the 3rd quasiconductor, current lead-through passage being distributed in described current barrier layer, described current lead-through passage is vertically
Run through described current barrier layer, and the resistivity of described current lead-through passage is less than described current barrier layer, wherein said first
Quasiconductor, the second quasiconductor and the 3rd semiconductor equalizing are N polarity, and described first quasiconductor, the second quasiconductor and the 3rd half
Conductor is selected from III group-III nitride semiconductor.
Below in conjunction with accompanying drawing and some embodiments, the technical solution of the utility model is further explained.
Embodiment 1
The present embodiment relate to a kind of making based on N polarity III group-III nitride, use GaN self-supported substrate realize enhancement mode
The method of self-supporting vertical stratification AlGaN/GaN HEMT device, it comprises the following steps:
(1) the N polarity high resistant in the N polar GaN self-supported substrate 2 hundreds of nanometer of Epitaxial growth to several micrometer ranges
GaN layer (i.e. current barrier layer 3), takes out from MOCVD chamber after having grown, and utilizes organic solution to be carried out, then with high
Pure nitrogen gas purges, it is thus achieved that high resistant GaN epitaxial slice structure as shown in Figure 1.
(2) the high resistant GaN epitaxial wafer cleaned up carrying out photoetching development, photoresist uses AZ5214, and time of exposure is
6.5s, developing time is 50s-60s, forms a Si ion implanting window.
(3) to by be lithographically formed the epitaxial wafer of ion implanting window utilize ion implantation apparatus introduce Si line, adjust simultaneously
The Implantation Energy of joint Si ion and dosage, complete Si ion implanting, enables Si to realize effective doping at high resistant GaN, is formed
One current lead-through passage 4 low relative to high resistant GaN resistivity, the structure of the epitaxial wafer having been obtained Si ion implanting can be joined
See Fig. 2.
(4) with organic solvent, the epitaxial wafer completing Si ion implanting is carried out, and before carrying out secondary epitaxy growth
Insert in 200 DEG C of baking ovens and dry 2 hours, to remove surface moisture and impurity.
(5) during carrying out secondary epitaxy, sample is placed into the growth chamber of MOCVD device, and first MOCVD heats up
To 1160 DEG C, Si ion implanting is annealed, make impaired lattice have certain recovery, then growth N polarity AlGaN potential barrier
Layer 5, N polarity intrinsic GaN layer 6, Two-dimensional electron gas channel 7 and N polarity AlGaN layer 8, form N polarity vertical stratification AlGaN/GaN
Epitaxial wafer.
(6) first epitaxially grown N polarity vertical stratification AlGaN/GaN epitaxial wafer is carried out organic solution cleaning, then use
Deionized water rinsing, clean with high pure nitrogen purging afterwards, then the superiors' N polarity AlGaN 5 in region under non-grid is carried out
Etching so that it is be substantially etched clean.
(7) N polarity vertical stratification AlGaN/GaN HEMT epitaxial wafer is carried out photoetching, form source area, place into electronics
Bundle deposition table, deposit ohmic contacting metal Ti/Al/Ni/Au (20nm/130/nm/50nm/150nm), carry out afterwards peeling off clearly
Wash, complete the making of source electrode 9.
(8) to substrate 2 backside deposition drain electrode 1 and form Ohmic contact, its process equally utilizes electron beam deposition Ti/
Al/Ni/Au (20nm/130/nm/50nm/150nm) and peel off cleaning parallel, carries out 890 DEG C of 30s Europe to sample after having deposited
Nurse contact annealing.
(9) after sample has been annealed, carrying out photoetching and development, utilize photoresist mask to protect active area, F injects
Isolation forms device isolation.
(10) after mesa-isolated completes, it is carried out being lithographically formed gate regions, also with electron beam deposition Ni/Au
(50/250nm) carrying out peeling off and form grid 10,400 DEG C of 10min annealing form Schottky contacts the most in a nitrogen atmosphere, complete
Become the making of grid 10, also complete the making of whole HEMT device simultaneously.
The knot of the enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device prepared for the present embodiment shown in Figure 3
Structure schematic diagram.
Embodiment 2
The present embodiment relate to a kind of making based on N polarity III group-III nitride, use GaN self-supported substrate realize enhancement mode
The method of self-supporting vertical stratification AlGaN/GaN HEMT device, it comprises the following steps:
(1) the N polarity pGaN layer in the N polar GaN self-supported substrate 2 hundreds of nanometer of Epitaxial growth to several micrometer ranges
And/or SiO2Dielectric layer 3 (i.e. current barrier layer 3 '), the structure of the high resistant GaN epitaxial wafer formed can be found in Fig. 4.
(2) the high resistant GaN epitaxial wafer cleaned up carrying out photoetching development, photoresist uses AZ5214, and time of exposure is
6.5s, developing time is 50s-60s, forms an etching window.
(3) utilize the etching apparatus such as ICP or RIE that patterned area is performed etching, form a conducting through hole, outside being obtained
Prolong chip architecture and can be found in Fig. 5.
(4) epitaxial wafer is carried out organic washing, puts into after 200 DEG C of baking ovens dry 2 hours before carrying out secondary epitaxy growth,
Remove surface moisture and impurity.
(5) during carrying out secondary epitaxy, sample is placed into growth chamber, utilizes laterally overgrown N polar material
Obtain current lead-through passage 4, then growth N polarity AlGaN potential barrier 5, N polarity intrinsic GaN layer 6, Two-dimensional electron gas channel 7, N
Polarity AlGaN layer 8 etc..
(6) first the N polarity vertical stratification AlGaN/GaN epitaxial wafer that epitaxial growth is complete is carried out organic solution cleaning, then
With deionized water rinsing, clean with high pure nitrogen purging afterwards, then the superiors' N polarity AlGaN in region under non-grid is carried out
Etching so that it is be substantially etched clean.
(7) N polarity vertical stratification AlGaN/GaN HEMT epitaxial wafer is carried out photoetching, form source area, place into electronics
Bundle deposition table, deposit ohmic contacting metal Ti/Al/Ni/Au (20nm/130/nm/50nm/150nm) also carries out peeling off cleaning, complete
Become the making of source electrode 9.
(8) at substrate 2 back side also with electron beam deposition Ti/Al/Ni/Au (20nm/130/nm/50nm/150nm) and
Peel off cleaning parallel, after having deposited, sample carried out the annealing of 890 DEG C of 30s Ohmic contact, complete to drain 1 making.
(9) after sample has been annealed, carrying out photoetching and development, utilize photoresist mask to protect active area, F injects
Isolation forms device isolation.
(10) after mesa-isolated completes, it is carried out being lithographically formed gate regions, also with electron beam deposition Ni/Au
(50/250nm) peeling off, 400 DEG C of 10min annealing form Schottky contacts in a nitrogen atmosphere, complete the making of grid 10,
Also complete the making of whole HEMT device simultaneously.
See the structure that Fig. 6 is the enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device that the present embodiment prepares to show
It is intended to.
The operation principle of the present embodiment HEMT device includes: when grid 10 voltage is more than threshold voltage, electronics is from source electrode 9
Two-dimensional electron gas channel 7 along AlGaN layer 5, GaN layer 6 interface transmits, when being transferred to above current lead-through passage 4, by
Relatively low in the resistivity of current lead-through passage 4, electrons transmits along current lead-through passage 4 in vertical direction, finally reaches
Drain electrode 1, owing to high resistant GaN substrate 2 has the strongest current blocking effect to electronics, so major part electrons is along current lead-through
Passage 4 transmits, and such vertical stratification AlGaN/GaN HEMT device is under ON state state；When grid 10 is in 0 current potential or grid
When pole 10 voltage is less than threshold voltage, the two-dimensional electron gas under grid 10 is depleted, it is impossible to carry out electronics at Two-dimensional electron channeling
The transmission in road 7, makes electronics cannot transmit in the vertical direction of current lead-through passage 4, makes vertical stratification AlGaN/GaN HEMT device
Part is under OFF state state, by regulation current lead-through passage 4 size Lap, spacing L of source electrode 9 and grid 10gsAnd grid
10 expand distance LgoValue size can realize the vertical stratification AlGaN/GaN HEMT device of different gated device characteristic.
Should be appreciated that above-described embodiment only illustrates technology of the present utility model design and feature, its object is to allow ripe
The personage knowing technique will appreciate that content of the present utility model and implements according to this, can not limit of the present utility model with this
Protection domain.All equivalence changes made according to this utility model spirit or modification, all should contain of the present utility model
Within protection domain.
Claims (10)
1. an enhancement mode self-supporting vertical stratification III group-III nitride HEMT device, it is characterised in that include N polarity epitaxial structure
And source electrode, drain and gate, described epitaxial structure includes the electric current resistance being sequentially formed in the first surface of substrate from bottom to top
Barrier, heterojunction structure and the 3rd quasiconductor, described heterojunction structure is mainly formed by the first quasiconductor and the second quasiconductor, and described
Be formed with two-dimensional electron gas in heterojunction structure, described substrate with first surface back to second surface and drain electrode formed ohm
Contact, described second quasiconductor forms Ohmic contact with source electrode, and described grid is arranged on the 3rd quasiconductor, described current blocking
Current lead-through passage is distributed in Ceng, and described current lead-through passage vertically runs through described current barrier layer, and described electricity
The resistivity of conductance circulation passage is less than described current barrier layer, and wherein said first quasiconductor, the second quasiconductor and the 3rd half are led
Body is N polarity, and described first quasiconductor, the second quasiconductor and the 3rd semiconductor equalizing are selected from III group-III nitride semiconductor.
2. an enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device, it is characterised in that include N polarity epitaxial structure
And source electrode, drain and gate, described N polarity epitaxial structure includes the electricity being sequentially formed in the first surface of substrate from bottom to top
Flow barrier, the first AlGaN layer of N polarity, N polarity intrinsic GaN layer and the second AlGaN layer of N polarity, described substrate with
The second surface of one surface opposite pair and drain electrode form Ohmic contact, and described intrinsic GaN layer and source electrode form Ohmic contact, described
Grid is arranged in the second AlGaN layer, and current lead-through passage, described current lead-through passage edge are distributed in described current barrier layer
Vertical direction runs through described current barrier layer, and the resistivity of described current lead-through passage is less than described current barrier layer.
Enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device the most according to claim 2, it is characterised in that: institute
State the second AlGaN layer and be only distributed in the region being positioned at immediately below grid.
Enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device the most according to claim 2, it is characterised in that: institute
State substrate selected from N polar GaN self-supported substrate.
Enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device the most according to claim 2, it is characterised in that: institute
The thickness stating the first AlGaN layer is less than or equal to 30nm more than 0；And/or, the thickness of described intrinsic GaN layer is less than more than 0
Or equal to 50nm；And/or, the thickness of described second AlGaN layer is less than or equal to 30nm more than 0.
Enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device the most according to claim 2, it is characterised in that: institute
State formation Schottky contacts between the second AlGaN layer and grid.
Enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device the most according to claim 2, it is characterised in that: institute
State current lead-through passage and be only distributed the region being positioned at immediately below the second AlGaN layer.
8., according to the enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device described in claim 2 or 7, its feature exists
In: described current lead-through passage is the conductive channel formed by the selection area of current barrier layer is carried out n-type doping；Or
Person, described current lead-through passage is by filling the AlGaN material of N polarity in the through hole in current barrier layer and leading of being formed
Electric channel.
Enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device the most according to claim 2, it is characterised in that: the
Sealing coat is also distributed between one AlGaN layer and intrinsic GaN layer.
Enhancement mode self-supporting vertical stratification AlGaN/GaN HEMT device the most according to claim 9, it is characterised in that:
The thickness of described sealing coat is 1-5nm.
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