CN106941117A - Gallium nitride radical heterojunction current apertures device based on suspension superjunction and preparation method thereof - Google Patents
Gallium nitride radical heterojunction current apertures device based on suspension superjunction and preparation method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 152
- 239000000725 suspension Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title description 4
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000002347 injection Methods 0.000 claims abstract description 22
- 239000007924 injection Substances 0.000 claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 51
- 239000012535 impurity Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000007943 implant Substances 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 31
- 230000005684 electric field Effects 0.000 description 28
- 230000000903 blocking effect Effects 0.000 description 19
- 238000009826 distribution Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000005566 electron beam evaporation Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- 238000011160 research Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention discloses a kind of gallium nitride radical heterojunction current apertures device based on suspension superjunction, the problem of prior art can not realize good two-way blocking-up is mainly solved.It includes from bottom to top：Schottky drain (13), substrate (1), drift layer (4), aperture layer (5), the symmetrical current barrier layer (6) in left and right two, channel layer (8), barrier layer (9) and grid (12), aperture (7) are formed between two current barrier layers (6), both sides on barrier layer are deposited with below two source electrodes (11), two source electrodes by ion implanting two injection regions (10) of formation；Wherein：Two symmetrical P posts (2) and a N post (3) are provided between above substrate and below drift layer, two P posts are located at the left and right sides of N posts.The present invention has good two-way blocking-up ability, and forward break down voltage and breakdown reverse voltage are high, available for power electronic system.
Description
Technical field
The invention belongs to microelectronics technology, it is related to semiconductor devices, is based particularly on the gallium nitride base of suspension superjunction
Hetero-junctions current apertures device, available for power electronic system.
Technical background
Power semiconductor is the core parts of Power Electronic Technique, with becoming increasingly conspicuous for the energy and environmental problem,
Research and develop novel high-performance, low-loss power device just turn into improve utilization rate of electrical, save the energy, alleviating energy crisis it is effective
One of approach.And serious restricting relation is there is in power device research, between high speed, high pressure and low on-resistance, close
It is the key for improving device overall performance to manage, effectively improve this restricting relation.With the development of microelectric technique, tradition the
The theoretical limit that generation Si semiconductors and second generation GaAs semiconductor power devices performance have been determined in itself close to its material.In order to
Chip area can be further reduced, working frequency is improved, improves operating temperature, reduction conducting resistance, improves breakdown voltage, reduction
Machine volume, overall efficiency is improved, using GaN as the semiconductor material with wide forbidden band of representative, by its bigger energy gap, higher
Critical breakdown electric field and Geng Gao electronics saturation drift velocity, and the protrusion such as stable chemical performance, high temperature resistant, radioresistance is excellent
Point, shows one's talent in terms of high performance power device is prepared, and application potential is huge.Especially with GaN base heterojunction structure
Horizontal HEMT, i.e., horizontal GaN base high electron mobility transistor (HEMT) device, is even more because of its low electric conduction
The characteristics such as resistance, high-breakdown-voltage, senior engineer's working frequency, become the focus studied and applied both at home and abroad, focus.
However, in horizontal GaN base HEMT device, in order to obtain higher breakdown voltage, it is necessary to increase grid leak spacing, this
Device size and conducting resistance can be increased, reduce effective current density and chip performance on unit chip area, so as to cause
The increase of chip area and development cost.In addition, in horizontal GaN base HEMT device, as caused by high electric field and surface state
Current collapse problem is more serious, although currently existing numerous braking measures, current collapse problem is not obtained still thoroughly
Solve.In order to solve the above problems, researchers propose vertical-type GaN base current apertures heterojunction transistor, are also a kind of
Gallium nitride radical heterojunction current apertures device, referring to AlGaN/GaN current aperture vertical electron
transistors,IEEE Device Research Conference,pp.31-32,2002.GaN base current apertures hetero-junctions
Transistor can improve breakdown voltage by increasing drift layer thickness, it is to avoid the problem of sacrifice device size and conducting resistance, because
This can realize high power density chip.And in GaN base current apertures heterojunction transistor, high electric field region, which is located at, partly leads
In body material bodies, this can thoroughly eliminate current collapse problem.2004, after Ilan Ben-Yaacov et al. are using etching
MOCVD regrowth trench technologies develop AlGaN/GaN current apertures heterojunction transistors, and the device does not use passivation layer, most
Big output current is 750mA/mm, and mutual conductance is 120mS/mm, and two ends grid breakdown voltage is 65V, and current collapse effect is shown
Write and suppress, referring to AlGaN/GaN current aperture vertical electron transistors with
regrown channels,Journal of Applied Physics,Vol.95,No.4,pp.2073-2078,2004。
2012, Srabanti Chowdhury et al. utilized Mg ion implanting current barrier layer combination plasma asistance MBE regrowths
The technology of AlGaN/GaN hetero-junctions, develops the current apertures heterojunction transistor based on GaN substrate, the device is using 3 μm of drifts
Layer is moved, maximum output current is 4kAcm-2, conducting resistance is 2.2m Ω cm2, breakdown voltage is 250V, and suppression electric current collapses
Effect of collapsing is good, referring to CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN
Layers to Suppress Dispersion,IEEE Electron Device Letters,Vol.33,No.1,pp.41-
43,2012.The same year, a kind of enhanced GaN base current apertures heterojunction transistor proposed by Masahiro Sugimoto et al.
Authorized, referring to Transistor, US8188514B2,2012.In addition, 2014, Hui Nie et al. are ground based on GaN substrate
A kind of enhanced GaN base current apertures heterojunction transistor is made, the device threshold voltage is 0.5V, and saturation current is more than
2.3A, breakdown voltage is 1.5kV, and conducting resistance is 2.2m Ω cm2, referring to 1.5-kV and 2.2-m Ω-cm2Vertical
GaN Transistors on Bulk-GaN Substrates,IEEE Electron Device Letters,Vol.35,
No.9,pp.939-941,2014。
Traditional GaN base current apertures heterojunction transistor is to be based on GaN base wide bandgap semiconductor heterojunction structure, and it is wrapped
Include：Substrate 1, drift layer 2, aperture layer 3, left and right two symmetrical current barrier layers 4, aperture 5, channel layer 6 and barrier layer 7；Gesture
Both sides above barrier layer 7, which are deposited with the barrier layer 7 between source electrode 9, source electrode 9, is deposited with grid 10, and the lower section of source electrode 9 passes through injection
Two injection regions 8 are formed, substrate 1 is deposited with ohmic drain 11 below, as shown in Figure 1.
By the theory and experimental study of more than ten years, researchers have found, above-mentioned traditional heterogeneous crystallization of GaN base current apertures
There is inherent shortcoming on body tubular construction, electric-field intensity distribution in device can be caused extremely uneven, especially current barrier layer with
There is high peak electric field in the semi-conducting material of aperture area interface close beneath, so as to cause device premature breakdown.
This to be difficult to realize by increasing the thickness of N-shaped GaN drift layer come the breakdown voltage of constantly improve device in actual process.Cause
This, the breakdown voltage of traditional structure GaN base current apertures heterojunction transistor is not universal high.In order to obtain higher device breakdown
Voltage, it is possible to by increasing the thickness of N-shaped GaN drift layer come the breakdown voltage of constantly improve device, Zhongda in 2013
Li et al. have studied a kind of enhanced GaN base current apertures heterojunction transistor based on superjunction using technology of numerical simulation, grind
Study carefully result and show the Electric Field Distribution that super-junction structure can be effectively inside modulation device, device inside electric field everywhere when making to be in OFF state
Intensity tends to be uniformly distributed, therefore device electric breakdown strength is up to 5~20kV, and when using 3 μm of attached columns wide breakdown voltage for
12.4kV, and conducting resistance is only 4.2m Ω cm2, referring to Design and Simulation of 5-20-kV GaN
Enhancement-Mode Vertical Superjunction HEMT,IEEE Transactions on Electron
Decices,Vol.60,No.10,pp.3230-3237,2013.Using superjunction GaN base current apertures heterojunction transistor from
High-breakdown-voltage can be obtained in theory, and can realize that breakdown voltage is constantly improve with the increase of N-shaped GaN drift layer thickness,
It is to have reported a kind of very effective high power device structure of breakdown voltage highest in document both at home and abroad at present.
With the extension of application field, in many technology necks such as electric automobile, S power-like amplifiers, power management system
In domain, in order to effectively realize power conversion and control, in the urgent need to the high performance power device with two-way blocking-up ability, i.e.,
Device will not only have very strong forward blocking ability, i.e. forward break down voltage, also have very strong reverse blocking capability simultaneously,
Namely wish that device has very high negative drain breakdown voltage, i.e. breakdown reverse voltage under OFF state.And existing tradition
GaN base current apertures heterojunction transistor uses ohmic drain, when device drain applies low-down backward voltage, device
In current barrier layer will fail, form very big drain-source leakage current, and with the increase of drain electrode backward voltage, device
Grid positive can also be opened, and by very big gate current, ultimately result in component failure.Therefore, existing traditional GaN base current aperture
Footpath heterojunction transistor can not realize reverse blocking function.
The content of the invention
It is an object of the invention to the deficiency for above-mentioned prior art, there is provided a kind of gallium nitride base based on suspension superjunction
Hetero-junctions current apertures device and preparation method thereof, to improve the forward break down voltage and breakdown reverse voltage of device, and is realized
The sustainable increase of forward break down voltage and breakdown reverse voltage, improves the breakdown characteristics of device.
To achieve the above object, the technical proposal of the invention is realized in this way：
First, device architecture
A kind of gallium nitride radical heterojunction current apertures device based on suspension superjunction, including：Substrate 1, drift layer 4, aperture
Layer 5, the symmetrical current barrier layer 6 in left and right two, channel layer 8 and barrier layer 9, the bottom of substrate 1 is provided with Schottky drain 13, gesture
Both sides in barrier layer 9 are deposited with two source electrodes 11, and two lower sections of source electrode 11 pass through two injection regions 10 of ion implanting formation, source electrode
Between barrier layer on be deposited between grid 12, two symmetrical current barrier layers 6 formation aperture 7, it is characterised in that：
Between the substrate 1 and drift layer 4, the column construction provided with two using p-type GaN material, i.e., two Hes of P posts 2
One column construction using N-shaped GaN material, i.e. N posts 3, and two P posts 2 are located at the left and right sides of N posts 3, the thickness of each P posts 2
Degree is identical with the thickness of N posts 3.
2nd, preparation method
The method that the present invention makes the gallium nitride radical heterojunction current apertures device based on suspension superjunction, including following mistake
Journey：
A. substrate 1 is made：
Doping concentration is used for 5 × 1015~5 × 1017cm-3, the N-shaped GaN that thickness U is 3~30 μm, width is 2~20 μm
Material does substrate 1；
B. P posts 2 and N posts 3 are made；
B1) portion's first time extension a layer thickness H on substrate 11It is 5 × 10 for 5~10 μm, doping concentration15~5 ×
1017cm-3N-shaped GaN material, and mask is made in this layer of N-shaped GaN material, using the mask in this layer of N-shaped GaN material
Two side position implanted with p-type impurity, to form average doping concentration as 5 × 1015~5 × 1017cm-3The doping of two p-types the
One area, the thickness H in two firstth areasP1For 5~10 μm, width WP1For 0.5~5 μm, and HP1=H1；
B2) in step B1) the N-shaped GaN material top and two the first area tops of extension, second of extension a layer thickness H2
It is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and make and cover in this layer of N-shaped GaN material
Mould, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, using formed average doping concentration as 5 ×
1015~5 × 1017cm-3Two p-types doping the secondth area, the thickness H in two secondth areasP2For 5~10 μm, width WPFor
0.5~5 μm, H2=HP2；
B3) in step B2) the N-shaped GaN material top and two the second area tops of extension, third time extension a layer thickness H3
It is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and make and cover in this layer of N-shaped GaN material
Mould, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, using formed average doping concentration as 5 ×
1015~5 × 1017cm-3Two p-types doping the 3rd area, HP3For 5~10 μm, width WPFor 0.5~5 μm, H3=HP3；
B4) the like ..., on the N-shaped GaN material top of a preceding extension and two m-1 of previous step formation
The upper the m times extension a layer thickness H in areamIt is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and
Mask is made in this layer of N-shaped GaN material, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material,
To form average doping concentration as 5 × 1015~5 × 1017cm-3, thickness HPmFor 5~10 μm, width WPFor two of 0.5~5 μm
The m areas of p-type doping, and Hm=HPm, m is for the integer more than zero and according to the determination of actual fabrication technique；
So far, firstth area in left side in step B, the secondth area, the 3rd area to m areas are collectively forming the left P posts 2 in left side, right
Firstth area of side, the secondth area, the 3rd area to m areas are collectively forming the right P posts 2 on right side, and the width of each P posts 2 is WP, it is
0.5~5 μm, thickness H is met：H=HP1+HP2+…+HPm, its value is 5~40 μm；
The part for not carrying out p-type doping in step B in the GaN material of all extensions forms the N posts 3 of entirety, the N posts 3
Thickness is identical with the thickness H of P posts 2, width WN=2WP；
C. in N posts 3 and the upper epitaxial N-shaped GaN semi-conducting materials of two P posts 2, it is 3~25 μm, doping to form thickness L
Concentration is 1 × 1015~1 × 1017cm-3Drift layer 4；
D. in the upper epitaxial N-shaped GaN semi-conducting materials of drift layer 4, formed thickness be 0.5~2 μm, doping concentration be 1
×1016~1 × 1018cm-3Aperture layer 5；
E. mask is made on aperture layer 5, using two side position implanted with p-type impurity of the mask in aperture layer, to make
Make that thickness is identical with aperture layer thickness, width a be 0.5~8 μm, the doping concentration of n-type impurity be 1 × 1018~5 × 1018cm-3
Current barrier layer 6, aperture 7 is formed between two symmetrical current barrier layers 6；
F. in two current barrier layers 6 and the upper epitaxial GaN semi-conducting materials of aperture 7 between them, forming thickness is
0.04~0.2 μm of channel layer 8；
G. in the upper epitaxial GaN base semiconductor material with wide forbidden band of channel layer 8, the barrier layer 9 that thickness is 5~50nm is formed；
H. mask is made on the top of barrier layer 9, using two side position implant n-type impurity of the mask in barrier layer,
To make doping concentration as 1 × 1019~1 × 1021cm-3Injection region 10, wherein, the depth of two injection regions is all higher than potential barrier
Thickness degree, and less than the gross thickness of channel layer and both barrier layers；
I. mask is made on the top of barrier layer 9 and injection region 10, gold is deposited on two injection regions top using the mask
Category, to make source electrode 11；
J. mask is made on the top of barrier layer 9 and the top of source electrode 11, utilizes potential barrier of the mask between two source electrodes
Metal is deposited on layer 9, to make grid 12, in the horizontal direction overlapping is deposited between grid 12 and two current barrier layers 6,
Overlapping length is more than 0 μm；
K. metal is deposited on the back side of substrate 1, to make Schottky drain 13, completes the making of whole device.
Device of the present invention is compared with traditional GaN base current apertures heterojunction transistor, with advantages below：
1. realize continuing to increase for forward break down voltage.
The present invention is the suspension of the present invention due to being provided with P posts and N posts, the P posts and N posts between current barrier layer and substrate
Super-junction structure, compared to existing super-junction structure, in forward blocking situation, P posts, N posts and drift layer can form depletion region,
That is high field region, thus device architecture of the present invention can device internal electric field distribution when effectively modulated forward is blocked, improving device just
To breakdown voltage.
In the case of forward blocking, by increasing the thickness of P posts, the depletion region formed by P posts, N posts and drift layer
Area can be dramatically increased persistently, and be may be such that by optimizing device architecture of the present invention in drift layer in device, P posts, N posts everywhere
Peak electric field approximately equal, and less than the breakdown electric field of GaN base semiconductor material with wide forbidden band, so that forward break down voltage can be realized
Continue to increase.
2. realize continuing to increase for breakdown reverse voltage.
The present invention is as a result of Schottky drain so that device drain can bear backward voltage.On this basis, originally
Invention between current barrier layer and substrate due to being provided with P posts and N posts, compared to existing super-junction structure, the P posts, N posts and Xiao
After Te Ji drain electrodes are organically combined, in reverse blocking situation, P posts, N posts and substrate can form depletion region, can effectively modulate
Device internal electric field is distributed during reverse blocking, improves the breakdown reverse voltage of device；Meanwhile, in the case of reverse blocking, pass through
Increase the thickness of P posts, the area of the depletion region formed by P posts, N posts and substrate can be dramatically increased persistently, and by optimizing this
Invention device architecture may be such that peak electric field approximately equal, and everywhere wide less than GaN base in device substrate, drift layer, P posts, N posts
The breakdown electric field of bandgap semiconductor material, so that continuing to increase for breakdown reverse voltage can be realized.
The technology contents and effect of the present invention are further illustrated below in conjunction with drawings and Examples.
Brief description of the drawings
Fig. 1 is the structure chart of traditional GaN base current apertures heterojunction transistor；
Fig. 2 is the structure chart of the gallium nitride radical heterojunction current apertures device of the invention based on suspension superjunction；
Fig. 3 is the flow chart that the present invention makes the gallium nitride radical heterojunction current apertures device based on suspension superjunction；
Fig. 4 is the schematic diagram of making N posts and two P posts in the present invention；
Fig. 5 is to the forward blocking feelings obtained by traditional GaN base current apertures heterojunction transistor and device simulation of the present invention
Two dimensional electric field distribution map during condition；
Fig. 6 is the Vertical one dimensional distribution map of the electric field of the left current barrier layer right hand edge of each device along along Fig. 5；
Two dimensional electric field distribution map and device left side P posts when Fig. 7 is the reverse blocking situation obtained by device simulation of the present invention
Vertical one dimensional distribution map of the electric field near right hand edge.
Embodiment
Reference picture 2, the gallium nitride radical heterojunction current apertures device of the invention based on suspension superjunction is based on the wide taboo of GaN base
Improvement with semiconductor heterostructure, it includes：Substrate 1, drift layer 4, aperture layer 5, the two symmetrical current blockings in left and right
Layer 6, channel layer 8 and barrier layer 9, both sides are deposited with source electrode 11 to the barrier layer 9 above, and two lower sections of source electrode 11 are provided with and pass through ion
Inject to be deposited with the barrier layer between the injection region 10 formed, source electrode 11 between grid 12, two symmetrical barrier layers 6 and formed
Aperture 5, the lower section of substrate 1 is provided with Schottky drain 13, wherein：
The substrate 1, using N-shaped GaN material, and doping concentration is 5 × 1015~5 × 1017cm-3, the thickness U of substrate 1
For 3~30 μm, width is 2~20 μm, and the top of substrate 1 is provided with a N post 3 and two symmetrical P posts 2, and two 2, P posts
In the both sides of N posts 3；
Described two P posts 2, using p-type GaN material, its doping concentration is 5 × 1015~5 × 1017cm-3；Each P posts 2
Thickness H is 5~40 μm, width WPFor 0.5~5 μm；
The N posts 3, between two P posts 2, using N-shaped GaN material, its doping concentration scope is identical with P posts, N posts 3
There is identical thickness, width W with P posts 2NFor the width W of P posts 2PTwice, i.e. WN=2WP；
The drift layer 4, positioned at the top of N posts 3 and P posts 2, using N-shaped GaN material, its doping concentration is 1 × 1015~1
×1017cm-3, thickness L is 3~25 μm；
The aperture layer 5, positioned at the top of drift layer 4, using N-shaped GaN material, its thickness is 0.5~2 μm, is adulterated dense
Spend for 1 × 1016~1 × 1018cm-3；
The current barrier layer 6, the both sides in aperture layer 5, using p-type GaN material, its thickness is 0.5~2 μm,
Width a is 0.5~8 μm, and the doping concentration of n-type impurity is 1 × 1018~5 × 1018cm-3；
The channel layer 8, positioned at two current barrier layers 6 and the top of aperture 7, using N-shaped GaN material, its thickness is
0.04~0.2 μm；
The barrier layer 9, positioned at the top of channel layer 8, if it is by the identical or different GaN base wide bandgap semiconductor material of dried layer
Material composition, thickness is 5~50nm；
The grid 12, it deposits in the horizontal direction overlapping between two current barrier layers 6, and overlapping length is more than
0μm；
The Schottky drain 13, using Schottky junction structure, below substrate 1, the Schottky drain 13 uses work content
Metal of the number more than 4.5eV.
Reference picture 3, the present invention makes the process of the gallium nitride radical heterojunction current apertures device based on suspension superjunction, provides
Following three kinds of embodiments：
Embodiment one：Make the gallium nitride radical heterojunction current apertures device based on suspension superjunction that P pillar heights are 5 μm.
Step 1. makes substrate 1, such as Fig. 3 a.
Doping concentration is used for 5 × 1017cm-3, the N-shaped GaN material that thickness U is 3 μm, width is 2 μm do substrate 1；
Step 2. makes P posts 2 and N posts 3, such as Fig. 3 b.
Reference picture 5, this step is implemented as follows：
2.1) metal organic chemical vapor deposition technology is used, on substrate 1 first time extension a layer thickness H1For 5 μ
M, doping concentration are 5 × 1017cm-3N-shaped GaN material；
2.2) in step 2.1) mask is made in the N-shaped GaN material of extension, reuse n of the ion implantation technique in this layer
Two side position implanted with p-type impurity in type GaN material, to form average doping concentration as 5 × 1017cm-3, thickness HP1For 5 μm,
Width WPFor 0.5 μm of the firstth area of two p-types doping；
So far, the right P posts on the right side of the left P posts 2 in step 2 on the left of the firstth area formation in left side, the firstth area formation on right side
2, the width W of each P posts 2PFor 0.5 μm, thickness H is 5 μm；P-type doping is not carried out in the GaN material of all extensions of step 2
Part forms overall N posts 3, and the thickness of the N posts 3 is 5 μm, width WNFor 1 μm；
The process conditions of metal organic chemical vapor deposition technology are：Temperature is 950 DEG C, and pressure is 40Torr, with
SiH4For doped source, hydrogen flowing quantity is 4000sccm, and ammonia flow is 4000sccm, and gallium source flux is 100 μm of ol/min.
Step 3. makes drift layer 4, such as Fig. 3 c.
Using metal organic chemical vapor deposition technology, the portion epitaxial thickness L on two P posts 2 and N posts 3 is 3 μm,
Doping concentration is 1 × 1017cm-3N-Type GaN material, forms drift layer 4, wherein：
The process conditions that extension is used for：Temperature is 950 DEG C, and pressure is 40Torr, with SiH4For doped source, hydrogen flowing quantity
For 4000sccm, ammonia flow is 4000sccm, and gallium source flux is 100 μm of ol/min.
Step 4. extension N-shaped GaN on drift layer, forms aperture layer 5, such as Fig. 3 d.
Using metal organic chemical vapor deposition technology, on drift layer 2 epitaxial thickness be 0.5 μm, doping concentration be 1
×1016cm-3N-shaped GaN material, formed aperture layer 5, wherein：
The process conditions that extension is used for：Temperature is 950 DEG C, and pressure is 40Torr, with SiH4For doped source, hydrogen flowing quantity
For 4000sccm, ammonia flow is 4000sccm, and gallium source flux is 100 μm of ol/min.
Step 5. makes current barrier layer 6, such as Fig. 3 e.
5.1) mask is made on aperture layer 5；
5.2) ion implantation technique is used, the two side position implanted with p-type impurity Mg in aperture layer form thickness for 0.5 μ
M, width a are 0.5 μm, and n-type impurity doping concentration is 1 × 1018cm-3Two current barrier layers 6, two symmetrical electric currents resistances
Aperture 7 is formed between barrier 6.
Step 6. extension GaN material makes channel layer 8, such as Fig. 3 f.
Using molecular beam epitaxy technique, the upper epitaxial thickness in two current barrier layers 6 and aperture 7 is 0.04 μm
GaN material, forms channel layer 8；
The molecular beam epitaxy technique, its process conditions is：Vacuum is less than or equal to 1.0 × 10-10Mbar, radio-frequency power
For 400W, reactant uses N2, high-purity Ga sources.
Step 7. extension Al0.5Ga0.5N, makes barrier layer 9, such as Fig. 3 g.
The Al that epitaxial thickness is 5nm on channel layer 8 using molecular beam epitaxy technique0.5Ga0.5N materials, form barrier layer
9, wherein：
The process conditions of molecular beam epitaxy are：Vacuum is less than or equal to 1.0 × 10-10Mbar, radio-frequency power is 400W, instead
Agent is answered to use N2, high-purity Ga sources, high-purity Al sources；
Step 8. makes left and right two injection regions 10, such as Fig. 3 h.
8.1) mask is made on the top of barrier layer 9；
8.2) ion implantation technique is used, the both sides implant n-type impurity Si in barrier layer, to form depth as 0.01 μ
M, doping concentration is 1 × 1019cm-3Injection region 10；
8.3) rapid thermal annealing is carried out at a temperature of 1200 DEG C.
Step 9. makes source electrode 11, such as Fig. 3 i.
9.1) mask is made on two tops of injection region 10 and the top of barrier layer 9；
9.2) electron beam evaporation technique is used, in two injection regions top deposit Ti/Au/Ni combination metals, source electrode is formed
11, wherein：The metal deposited, from bottom to top, Ti thickness is 0.02 μm, Au thickness is 0.3 μm, Ni thickness is 0.05
μm；
The process conditions of electron beam evaporation are：Vacuum is less than 1.8 × 10-3Pa, power bracket is 200~1000W, evaporation
Speed is less than
Step 10. makes grid 12, such as Fig. 3 j.
10.1) top of barrier layer 9 between the top of source electrode 11 and source electrode makes mask；
10.2) electron beam evaporation technique is used, W metal, Au, Ni, shape are deposited successively on the barrier layer 9 between source electrode
Into grid 12, wherein：From bottom to top, Ni is 0.02 μm to the metal thickness deposited, Au is 0.2 μm, Ni is 0.04 μm；
The process conditions of electron beam evaporation are：Vacuum is less than 1.8 × 10-3Pa, power bracket is 200~1000W, evaporation
Speed is less than
Step 11. makes Schottky drain 13, such as Fig. 3 k.
Using electron beam evaporation technique, Ni metals are deposited at the back side of whole substrate 1, Schottky drain 13 is formed, wherein：
Ni thickness is 0.7 μm, completes the making of whole device.
The process conditions that are used of deposit metal for：Vacuum is less than 1.8 × 10-3Pa, power bracket is 200~1000W,
Evaporation rate is less than
Embodiment two：Make the gallium nitride radical heterojunction current apertures device based on suspension superjunction that P pillar heights are 25 μm.
First step makes substrate 1, such as Fig. 3 a.
Doping concentration is used for 5 × 1016cm-3, the N-shaped GaN material that thickness U is 15 μm, width is 12 μm do substrate 1；
Second step makes P posts 2 and N posts 3, such as Fig. 3 b.
Reference picture 5, this step is implemented as follows：
2.1) metal organic chemical vapor deposition technology is used, on substrate 1 first time extension a layer thickness H1For 8 μ
M, doping concentration are 5 × 1016cm-3N-shaped GaN material；
2.2) in step 2.1) mask is made in the N-shaped GaN material of extension, reuse n of the ion implantation technique in this layer
Two side position implanted with p-type impurity in type GaN material, to form average doping concentration as 5 × 1016cm-3, thickness HP1For 8 μm,
Width WPFor 3 μm of the firstth area of two p-types doping；
2.3) in step 2.1) the N-shaped GaN material top of extension and two second of the first area top extension a layer thickness
H2It is 5 × 10 for 8 μm, doping concentration16cm-3N-shaped GaN material；
2.4) in step 2.3) mask is made in the N-shaped GaN material of extension, ion implantation technique is reused in this layer of N-shaped
Two side position implanted with p-type impurity in GaN material, to form average doping concentration as 5 × 1016cm-3, thickness HP2For 8 μm, width
Spend WPThe secondth area adulterated for 3 μm of two p-types；
2.5) in step 2.3) the N-shaped GaN material top of extension and two second area top third time extension a layer thickness
H3It is 5 × 10 for 9 μm, doping concentration16cm-3N-shaped GaN material；
2.6) in step 2.5) mask is made in the N-shaped GaN material of extension, ion implantation technique is reused in this layer of N-shaped
Two side position implanted with p-type impurity in GaN material, to form average doping concentration as 5 × 1016cm-3, thickness HP3For 9 μm, width
Spend WPThe 3rd area adulterated for 3 μm of two p-types；
So far, the firstth area, the secondth area and the 3rd area in left side are collectively forming the left P posts 2 in left side, the of right side in second step
One area, the secondth area and the 3rd area are collectively forming the right P posts 2 on right side, the width W of each P posts 2PFor 3 μm, thickness H=HP1+HP2+
HP3, i.e., 25 μm, the part for not carrying out p-type doping in second step in the GaN material of all extensions forms the N posts 3 of entirety, the N posts 3
Thickness be 25 μm, width WNFor 6 μm；
The process conditions of metal organic chemical vapor deposition technology are：Temperature is 950 DEG C, and pressure is 40Torr, with
SiH4For doped source, hydrogen flowing quantity is 4000sccm, and ammonia flow is 4000sccm, and gallium source flux is 100 μm of ol/min.
3rd step makes drift layer 4, such as Fig. 3 c.
It it is 950 DEG C in temperature, pressure is 40Torr, with SiH4For doped source, hydrogen flowing quantity is 4000sccm, ammonia flow
For 4000sccm, under gallium source flux is 100 μm of ol/min process conditions, using metal organic chemical vapor deposition technology,
The upper epitaxial thickness L of two P posts 2 and N posts 3 be 12 μm, doping concentration be 9 × 1016cm-3N-shaped GaN material, formed drift
Move layer 4.
4th step extension N-shaped GaN on drift layer, form aperture layer 5, such as Fig. 3 d.
It it is 950 DEG C in temperature, pressure is 40Torr, with SiH4For doped source, hydrogen flowing quantity is 4000sccm, ammonia flow
For 4000sccm, under gallium source flux is 100 μm of ol/min process conditions, using metal organic chemical vapor deposition technology,
On drift layer 4 epitaxial thickness be 1.1 μm, doping concentration be 1.1 × 1017cm-3N-shaped GaN material, formed aperture layer 5.
5th step makes current barrier layer 6, such as Fig. 3 e.
A mask 5a) is made on aperture layer 5；
Ion implantation technique 5b) is used, the two side position implanted with p-type impurity Mg in aperture layer form thickness for 1.1 μ
M, width a are 5 μm, doping concentration is 3 × 1018cm-3Two current barrier layers 6, between two symmetrical current barrier layers 6
Form aperture 7.
6th step extensions GaN material makes channel layer 8, such as Fig. 3 f.
It is less than or equal to 1.0 × 10 in vacuum-10Mbar, radio-frequency power is 400W, and reactant uses N2, high-purity Ga sources
Under process conditions, using molecular beam epitaxy technique, the upper epitaxial thickness in two current barrier layers 6 and aperture 7 is 0.15 μm
GaN material, formed channel layer 8.
7th step extensions Al0.3Ga0.2N, makes barrier layer 9, such as Fig. 3 g.
It is less than or equal to 1.0 × 10 in vacuum-10Mbar, radio-frequency power is 400W, and reactant uses N2, high-purity Ga sources, height
Under the process conditions of pure Al sources, the Al that epitaxial thickness is 15nm on channel layer 8 using molecular beam epitaxy technique0.3Ga0.2N materials,
Form barrier layer 9.
8th step makes left and right two injection regions 10, such as Fig. 3 h.
8a) mask is made on the top of barrier layer 9；
Ion implantation technique 8b) is used, the both sides implant n-type impurity Si in barrier layer forms depth for 0.02 μm, mixed
Miscellaneous concentration is 9 × 1019cm-3Injection region 10；
Rapid thermal annealing 8c) is carried out at a temperature of 1200 DEG C.
9th step makes source electrode 11, such as Fig. 3 i.
9a) mask is made on two tops of injection region 10 and the top of barrier layer 9；
9b) it is less than 1.8 × 10 in vacuum-3Pa, power bracket is 200~1000W, and evaporation rate is less thanTechnique bar
Under part, using electron beam evaporation technique, in two injection regions top deposit Ti/Au/Ni combination metals, source electrode 11 is formed, wherein：
The metal deposited, from bottom to top, Ti thickness is 0.02 μm, Au thickness is 0.3 μm, Ni thickness is 0.05 μm.
Tenth step makes grid 12, such as Fig. 3 j.
10a) mask is made on the top of source electrode 11 and barrier layer 9；
10b) it is less than 1.8 × 10 in vacuum-3Pa, power bracket is 200~1000W, and evaporation rate is less thanTechnique
Under the conditions of, using electron beam evaporation technique, deposit W metal, Au, Ni successively in cap layers 10, form grid 12, wherein：Formed sediment
From bottom to top, Ni is 0.02 μm to long-pending metal thickness, Au is 0.2 μm, Ni is 0.04 μm, grid 12 and two current barrier layers 6
Between overlapping length in the horizontal direction be 0.5 μm.
11st step makes Schottky drain 13, such as Fig. 3 k.
It is less than 1.8 × 10 in vacuum-3Pa, power bracket is 200~1000W, and evaporation rate is less thanProcess conditions
Under, using electron beam evaporation technique, Pt metals are deposited at the back side of whole substrate 1, Schottky drain 13 is formed, wherein：Pt's
Thickness is 0.7 μm, completes the making of whole device.
Embodiment three：Make the gallium nitride radical heterojunction current apertures device based on suspension superjunction that P pillar heights are 40 μm.
Step A. makes substrate 1, such as Fig. 3 a.
Doping concentration is used for 5 × 1015cm-3, the N-shaped GaN material that thickness U is 30 μm, width is 20 μm do substrate 1；
Step B. makes P posts 2 and N posts 3, such as Fig. 3 b.
Reference picture 5, this step is implemented as follows：
B1 metal organic chemical vapor deposition technology) is used, on substrate 1 first time extension a layer thickness H1For 10 μ
M, doping concentration are 5 × 1017cm-3N-shaped GaN material；
B2) in step B1) mask is made in the N-shaped GaN material of extension, reuse N-shaped of the ion implantation technique in this layer
Two side position implanted with p-type impurity in GaN material, to form average doping concentration as 5 × 1015cm-3, thickness HP1For 10 μm, width
Spend WPFor 5 μm of the firstth area of two p-types doping；
B3) in step B1) the N-shaped GaN material top of extension and two second of the first area top extension a layer thickness H2
It is 5 × 10 for 10 μm, doping concentration15cm-3N-shaped GaN material；
B4) in step B3) mask is made in the N-shaped GaN material of extension, ion implantation technique is reused in this layer of N-shaped GaN
Two side position implanted with p-type impurity in material, to form average doping concentration as 5 × 1015cm-3, thickness HP2For 10 μm, width
WPThe secondth area adulterated for 5 μm of two p-types；
B5) in step B3) the N-shaped GaN material top of extension and two second area top third time extension a layer thickness H3
It is 5 × 10 for 10 μm, doping concentration15cm-3N-shaped GaN material；
B6) in step B5) mask is made in the N-shaped GaN material of extension, ion implantation technique is reused in this layer of N-shaped GaN
Two side position implanted with p-type impurity in material, to form average doping concentration as 5 × 1015cm-3, thickness HP3For 10 μm, width
WPThe 3rd area adulterated for 5 μm of two p-types；
B7) in step B5) the N-shaped GaN material top of extension and two extension a layer thickness H of the 3rd area top the 4th time4
It is 5 × 10 for 10 μm, doping concentration15cm-3N-shaped GaN material；
B8) in step B7) mask is made in the N-shaped GaN material of extension, ion implantation technique is reused in this layer of N-shaped GaN
Two side position implanted with p-type impurity in material, to form average doping concentration as 5 × 1015cm-3, thickness HP4For 10 μm, width
WPThe 4th area adulterated for 5 μm of two p-types；
So far, the firstth area, the secondth area, the 3rd area and the 4th area in left side are collectively forming the left P posts 2 in left side in stepb,
Firstth area, the secondth area, the 3rd area and the 4th area on right side are collectively forming the right P posts 2 on right side, the width W of each P posts 2PFor 5 μm,
Thickness H=HP1+HP2+HP3+HP4, i.e., 40 μm, the part for not carrying out p-type doping in step B in the GaN material of all extensions is formed
Overall N posts 3, the thickness of the N posts 3 is 40 μm, width WNFor 10 μm；
The process conditions of metal organic chemical vapor deposition technology are：Temperature is 950 DEG C, and pressure is 40Torr, with
SiH4For doped source, hydrogen flowing quantity is 4000sccm, and ammonia flow is 4000sccm, and gallium source flux is 100 μm of ol/min.
Step C. uses temperature for 950 DEG C, and pressure is 40Torr, with SiH4For doped source, hydrogen flowing quantity is 4000sccm,
Ammonia flow is 4000sccm, and gallium source flux is 100 μm of ol/min process conditions, uses metal organic chemical vapor deposition
Technology is 25 μm on two tops of P posts 2 and the upper epitaxial thickness L of N posts 3, doping concentration is 1 × 1015cm-3N-shaped GaN materials
Material, forms drift layer 4, such as Fig. 3 c.
Step D. uses temperature for 950 DEG C, and pressure is 40Torr, with SiH4For doped source, hydrogen flowing quantity is 4000sccm,
Ammonia flow is 4000sccm, and gallium source flux is 100 μm of ol/min process conditions, uses metal organic chemical vapor deposition
Technology, on drift layer 4 epitaxial thickness be 2 μm, doping concentration be 1 × 1018cm-3N-shaped GaN material, formed aperture layer 5, such as
Fig. 3 d.
Step E. first makes a mask on aperture layer 5, reuses ion implantation technique, the both sides position in aperture layer
Implanted with p-type impurity Mg is put, it is 2 μm to form thickness, width a is 8 μm, doping concentration is 5 × 1018cm-3Two current barrier layers
6, aperture 7, such as Fig. 3 e are formed between two symmetrical current barrier layers 6.
Step F. is less than or equal to 1.0 × 10 using vacuum-10Mbar, radio-frequency power is 400W, and reactant uses N2, it is high
The process conditions in pure Ga sources, using molecular beam epitaxy technique, the upper epitaxial thickness in two current barrier layers 6 and aperture 7 is
0.2 μm of GaN material, forms channel layer 8, such as Fig. 3 f.
Step G. is less than or equal to 1.0 × 10 using vacuum-10Mbar, radio-frequency power is 400W, and reactant uses N2, it is high
Pure Ga sources, the process conditions in high-purity Al sources, using molecular beam epitaxy technique, epitaxial thickness is 50nm's on channel layer 8
Al0.1Ga0.9N materials, form barrier layer 9, such as Fig. 3 g.
Step H. first makes mask on the top of barrier layer 9, reuses ion implantation technique, the both sides note in barrier layer
Enter p-type impurity Si, formed depth be 0.06 μm, doping concentration be 1 × 1021cm-3Injection region 10, finally in 1200 DEG C of temperature
Lower carry out rapid thermal annealing, such as Fig. 3 h.
Step I. first makes mask on two tops of injection region 10 and the top of barrier layer 9, then it is less than 1.8 using vacuum ×
10-3Pa, power bracket is 200~1000W, and evaporation rate is less thanProcess conditions, using electron beam evaporation technique, two
Individual injection region top deposit Ti/Au/Ni combination metals, form source electrode 11, wherein：The metal deposited, from bottom to top, Ti thickness
Degree is 0.02 μm, Au thickness is 0.3 μm, Ni thickness is 0.05 μm, such as Fig. 3 i.
Step J. first makes mask on the top of source electrode 11 and barrier layer 9, then is less than 1.8 × 10 using vacuum-3Pa, work(
Rate scope is 200~1000W, and evaporation rate is less thanProcess conditions, using electron beam evaporation technique, between source electrode
W metal, Au, Ni are deposited on barrier layer 9 successively, grid 12 is formed, wherein：From bottom to top, Ni is the metal thickness deposited
0.02 μm, Au be 0.2 μm, Ni be 0.04 μm, such as Fig. 3 j.
Step K. first makes mask at the back side of substrate 1, then is less than 1.8 × 10 using vacuum-3Pa, power bracket is
200~1000W, evaporation rate is less thanProcess conditions, are formed sediment successively using electron beam evaporation technique at the back side of whole substrate 1
Product Ni, Au metal, forms Schottky drain 13, wherein：Ni thickness is 0.05 μm, Au thickness is 0.7 μm, completes whole device
The making of part, such as Fig. 3 k.
The effect of the present invention can be further illustrated by following emulation.
Emulation 1：To traditional GaN base current apertures heterojunction transistor and device of the present invention in forward blocking situation two
Dimension Electric Field Distribution is emulated, as a result such as Fig. 5, and wherein Fig. 5 (a) is traditional devices, and its forward break down voltage is 630V, Fig. 5 (b)
For device of the present invention, its forward break down voltage is 1890V.
It can be seen from Fig. 5 (a) during forward blocking situation, electric-field intensity distribution is extremely uneven in traditional devices, in electric current
Barrier layer in the semi-conducting material of aperture area interface close beneath with occurring in that high peak electric field, so as to cause device
Premature breakdown, the breakdown voltage of device is only 630V.And from Fig. 5 (b) as can be seen that during forward blocking situation, device of the present invention
Middle Electric Field Distribution is more uniform, and the area of the depletion region formed by P posts, N posts and drift layer is very big, can bear higher
Forward break down voltage, the breakdown voltage of device can be up to 1890V.Vertical one dimensional Electric Field Distribution with reference to shown in Fig. 6 can be more
Plus significantly find out, device architecture of the present invention can device internal electric field distribution when more efficiently modulated forward is blocked, improve
Device inside Electric Field Numerical, and make it that device inside Electric Field Distribution is more flat, therefore, the forward blocking ability of device of the present invention
It is significantly stronger than the forward blocking ability of traditional devices.
Emulation 2：The reverse blocking voltage of device of the present invention is emulated, as a result such as Fig. 7, wherein Fig. 7 (a) is reverse resistance
Two dimensional electric field distribution map during disconnected situation, Fig. 7 (b) is the Vertical one dimensional distribution map of the electric field near the right hand edge of P posts on the left of device.
As a result of suspension super-junction structure it can be seen from Fig. 7 (a), under -2874V reverse blocking state, this hair
The high field region area of bright device inside is larger, and combination Fig. 7 (b) is visible, and the Electric Field Distribution in device of the present invention is very uniform, explanation
Device of the present invention can effectively realize reverse blocking function.
Above description is only several specific embodiments of the present invention, is not construed as limiting the invention, it is clear that for this
, can be without departing substantially from the principle and scope of the present invention after present invention and principle has been understood for the professional in field
In the case of, the method according to the invention carries out the various modifications and variations in form and details, but these are based on the present invention
Modifications and variations still the present invention claims within.
Claims (8)
1. a kind of gallium nitride radical heterojunction current apertures device based on suspension superjunction, including：Substrate (1), drift layer (4), hole
Footpath layer (5), the symmetrical current barrier layer (6) in left and right two, channel layer (8) and barrier layer (9), the bottom of substrate (1) is provided with Xiao
Te Ji drains (13), and the both sides on barrier layer (9), which are deposited with below two source electrodes (11), two source electrodes (11), passes through ion implanting
Form two injection regions (10), be deposited with grid (12) on the barrier layer between source electrode, two symmetrical current barrier layers (6) it
Between formed aperture (7), it is characterised in that：
Between the substrate (1) and drift layer (4), the column construction provided with two using p-type GaN material, i.e., two P posts (2)
With a column construction using N-shaped GaN material, i.e. N posts (3), and two P posts (2) are located at the left and right sides of N posts (3), each
The thickness of P posts (2) is identical with the thickness of N posts (3).
2. device according to claim 1, it is characterised in that the thickness U of substrate (1) determines according to actual fabrication technique, its
Span is 3~30 μm.
3. device according to claim 1, it is characterised in that Schottky drain (13) is more than 4.5eV gold using work function
Category.
4. device according to claim 1, it is characterised in that the width W of each P posts (2)PFor 0.5~5 μm.
5. device according to claim 1, it is characterised in that the width W of N posts (3)NFor each P posts (2) width WPTwo
Times, i.e. WN=2WP, the thickness H of N posts (3) is 5~40 μm.
6. device according to claim 1, it is characterised in that P posts (2) are identical with the doping concentration of N posts (3), it is 5 ×
1015~5 × 1017cm-3。
7. device according to claim 1, it is characterised in that the doping concentration of drift layer (4) is 1 × 1015~1 ×
1017cm-3, thickness L is 3~25 μm.
8. a kind of method for making the gallium nitride radical heterojunction current apertures device based on suspension superjunction, including following process：
A. substrate (1) is made：
Doping concentration is used for 5 × 1015~5 × 1017cm-3, the N-shaped GaN material that thickness U is 3~30 μm, width is 2~20 μm
Do substrate (1)；
B. P posts (2) and N posts (3) are made；
B1) in substrate (1) top first time extension a layer thickness H1It is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3
N-shaped GaN material, and make mask in this layer of N-shaped GaN material, utilize both sides of the mask in this layer of N-shaped GaN material
Position implanted with p-type impurity, to form average doping concentration as 5 × 1015~5 × 1017cm-3Two p-types doping the firstth area,
The thickness H in two firstth areasP1For 5~10 μm, width WPFor 0.5~5 μm, and HP1=H1；
B2) in step B1) the N-shaped GaN material top and two the first area tops of extension, second of extension a layer thickness H2For 5~
10 μm, doping concentration be 5 × 1015~5 × 1017cm-3N-shaped GaN material, and make mask in this layer of N-shaped GaN material, profit
With two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, to form average doping concentration as 5 × 1015~5
×1017cm-3Two p-types doping the secondth area, the thickness H in two secondth areasP2For 5~10 μm, width WPFor 0.5~5 μ
M, H2=HP2；
B3) in step B2) the N-shaped GaN material top and two the second area tops of extension, third time extension a layer thickness H3For 5~
10 μm, doping concentration be 5 × 1015~5 × 1017cm-3N-shaped GaN material, and make mask in this layer of N-shaped GaN material, profit
With two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, to form average doping concentration as 5 × 1015~5
×1017cm-3Two p-types doping the 3rd area, HP3For 5~10 μm, width WPFor 0.5~5 μm, H3=HP3；
B4) the like ..., on the N-shaped GaN material top of a preceding extension and two m-1 areas of previous step formation
The m times extension a layer thickness HmIt is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and at this
Mask is made in layer N-shaped GaN material, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, with shape
It is 5 × 10 into average doping concentration15~5 × 1017cm-3, thickness HPmFor 5~10 μm, width WPFor 0.5~5 μm of two p-types
The m areas of doping, and Hm=HPm, m is for the integer more than zero and according to the determination of actual fabrication technique；
So far, firstth area in left side in step B, the secondth area, the 3rd area to m areas are collectively forming the left P posts (2) in left side, right side
The firstth area, the secondth area, the 3rd area to m areas be collectively forming the right P posts (2) on right side, the width of each P posts (2) is WP, it is
0.5~5 μm, thickness H is met：H=HP1+HP2+…+HPm, its value is 5~40 μm；
The part for not carrying out p-type doping in step B in the GaN material of all extensions forms the N posts (3) of entirety, the N posts (3)
Thickness is identical with the thickness H of P posts (2), width WN=2WP；
C. in N posts (3) and the upper epitaxial N-shaped GaN semi-conducting materials of two P posts (2), it is 3~25 μm, doping to form thickness L
Concentration is 1 × 1015~1 × 1017cm-3Drift layer (4)；
D. in the upper epitaxial N-shaped GaN semi-conducting materials of drift layer (4), formed thickness be 0.5~2 μm, doping concentration be 1 ×
1016~1 × 1018cm-3Aperture layer (5)；
E. mask is made on aperture layer (5), using two side position implanted with p-type impurity of the mask in aperture layer, to make
Thickness is identical with aperture layer thickness, width a is 0.5~8 μm, the doping concentration of n-type impurity is 1 × 1018~5 × 1018cm-3's
Aperture (7) are formed between current barrier layer (6), two symmetrical current barrier layers (6)；
F. in two current barrier layers (6) and aperture (7) upper epitaxial GaN semi-conducting materials between them, forming thickness is
0.04~0.2 μm of channel layer (8)；
G. in channel layer (8) upper epitaxial GaN base semiconductor material with wide forbidden band, the barrier layer (9) that thickness is 5~50nm is formed；
H. mask is made on the top of barrier layer (9), using two side position implant n-type impurity of the mask in barrier layer, with
It is 1 × 10 to make doping concentration19~1 × 1021cm-3Injection region (10), wherein, the depth of two injection regions is all higher than potential barrier
Thickness degree, and less than the gross thickness of channel layer and both barrier layers；
I. mask is made on the top of barrier layer (9) and injection region (10), gold is deposited on two injection regions top using the mask
Category, to make source electrode (11)；
J. mask is made on barrier layer (9) top and source electrode (11) top, utilizes potential barrier of the mask between two source electrodes
Metal is deposited on layer (9), to make grid (12), there is horizontal direction between grid (12) and two current barrier layers (6)
On it is overlapping, overlapping length is more than 0 μm；
K. metal is deposited on the back side of substrate (1), to make Schottky drain (13), completes the making of whole device.
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| CN109888012A (en) * | 2019-03-14 | 2019-06-14 | 中国科学院微电子研究所 | GaN base superjunction Vertical power transistors and preparation method thereof |
| WO2019242100A1 (en) * | 2018-06-22 | 2019-12-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gallium oxide semiconductor electronic device with vertical structure and manufacturing method therefor |
| CN113380877A (en) * | 2021-06-10 | 2021-09-10 | 四川美阔电子科技有限公司 | Power device of double-junction field plate |
| US11289594B2 (en) | 2019-03-14 | 2022-03-29 | Institute of Microelectronics, Chinese Academy of Sciences | GaN-based superjunction vertical power transistor and manufacturing method thereof |
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| CN115332245B (en) | 2020-10-20 | 2024-03-08 | 英诺赛科(苏州)科技有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
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