CN106941117B - Gallium nitride radical heterojunction current apertures device based on suspension superjunction and preparation method thereof - Google Patents
Gallium nitride radical heterojunction current apertures device based on suspension superjunction and preparation method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 152
- 239000000725 suspension Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title description 3
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000002347 injection Methods 0.000 claims abstract description 22
- 239000007924 injection Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 106
- 238000000034 method Methods 0.000 claims description 51
- 239000012535 impurity Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 230000008901 benefit Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 31
- 230000005684 electric field Effects 0.000 description 22
- 230000000903 blocking effect Effects 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 238000009826 distribution Methods 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000005566 electron beam evaporation Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000000376 reactant Substances 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
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- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a kind of gallium nitride radical heterojunction current apertures device based on suspension superjunction, mainly solves the problems, such as that the prior art cannot achieve good two-way blocking-up.It includes: Schottky drain (13), substrate (1), drift layer (4), aperture layer (5), the two symmetrical current barrier layers (6) in left and right, channel layer (8), barrier layer (9) and grid (12) from bottom to top, aperture (7) are formed between two current barrier layers (6), there are two source electrode (11), two source electrodes lower sections pass through ion implanting and form two injection regions (10) for two sides deposit on barrier layer；Wherein: symmetrical P column (2) and a N column (3), two P columns are located at the left and right sides of N column there are two setting between above substrate and below drift layer.The present invention has good two-way blocking-up ability, and forward break down voltage and breakdown reverse voltage are high, can be used for power electronic system.
Description
Technical field
The invention belongs to microelectronics technologies, are related to semiconductor devices, are based particularly on the gallium nitride base of suspension superjunction
Hetero-junctions current apertures device, can be used for power electronic system.
Technical background
Power semiconductor is the core element of power electronic technique, with becoming increasingly conspicuous for energy and environmental problem,
Research and develop novel high-performance, low-loss power device just becomes raising utilization rate of electrical, energy saving, alleviating energy crisis effective
One of approach.And in power device research, between high speed, high pressure and low on-resistance, there is serious restricting relations, close
Managing, effectively improving this restricting relation is the key that improve device overall performance.With the development of microelectric technique, tradition the
Generation Si semiconductor and second generation GaAs semiconductor power device performance have been approached the theoretical limit that its material itself determines.In order to
It can be further reduced chip area, working frequency is improved, improve operating temperature, reduce conducting resistance, improve breakdown voltage, reduce
Machine volume improves overall efficiency, using GaN as the semiconductor material with wide forbidden band of representative, by its bigger forbidden bandwidth, higher
Critical breakdown electric field and higher electronics saturation drift velocity, and stable chemical performance, high temperature resistant, anti-radiation etc. protrusion it is excellent
Point, shows one's talent in terms of preparing high performance power device, and application potential is huge.Especially with GaN base heterojunction structure
Lateral high electron mobility transistor, i.e., lateral GaN base high electron mobility transistor (HEMT) device, even more because of its low electric conduction
The characteristics such as resistance, high-breakdown-voltage, high working frequency become the hot spot studied and applied both at home and abroad, focus.
However, in order to obtain higher breakdown voltage, need to increase grid leak spacing in lateral GaN base HEMT device, this
It will increase device size and conducting resistance, reduce effective current density and chip performance on unit chip area, so as to cause
The increase of chip area and development cost.In addition, in lateral GaN base HEMT device, as caused by high electric field and surface state
Current collapse problem is more serious, although currently having numerous braking measures, current collapse problem is not obtained still thoroughly
It solves.To solve the above-mentioned problems, researchers propose vertical-type GaN base current apertures heterojunction transistor, and a kind of
Gallium nitride radical heterojunction current apertures device, referring to AlGaN/GaN current aperture vertical electron
transistors,IEEE Device Research Conference,pp.31-32,2002.GaN base current apertures hetero-junctions
Transistor can improve breakdown voltage by increasing drift layer thickness, avoid the problem of sacrificing device size and conducting resistance, because
High power density chip may be implemented in this.And in GaN base current apertures heterojunction transistor, high electric field region, which is located at, partly to be led
In body material bodies, this can thoroughly eliminate current collapse problem.2004, after Ilan Ben-Yaacov et al. is using etching
MOCVD regrowth trench technology develops AlGaN/GaN current apertures heterojunction transistor, which does not use passivation layer, most
Big output electric current is 750mA/mm, and mutual conductance 120mS/mm, both ends grid breakdown voltage is 65V, and current collapse effect is shown
It writes and inhibits, referring to AlGaN/GaN current aperture vertical electron transistors with
regrown channels,Journal of Applied Physics,Vol.95,No.4,pp.2073-2078,2004。
2012, Srabanti Chowdhury et al. utilized Mg ion implanting current barrier layer combination plasma asistance MBE regrowth
The technology of AlGaN/GaN hetero-junctions develops the current apertures heterojunction transistor based on GaN substrate, and the device is using 3 μm of drifts
Move layer, maximum output current 4kAcm-2, conducting resistance is 2.2m Ω cm2, breakdown voltage 250V, and electric current is inhibited to collapse
Effect of collapsing is good, referring to CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN
Layers to Suppress Dispersion,IEEE Electron Device Letters,Vol.33,No.1,pp.41-
43,2012.The same year, a kind of enhanced GaN base current apertures heterojunction transistor proposed by Masahiro Sugimoto et al.
It is authorized, referring to Transistor, US8188514B2,2012.In addition, 2014, Hui Nie et al. is ground based on GaN substrate
A kind of enhanced GaN base current apertures heterojunction transistor is produced, which is 0.5V, and saturation current is greater than
2.3A, breakdown voltage 1.5kV, conducting resistance are 2.2m Ω cm2, referring to 1.5-kV and 2.2-m Ω-cm2Vertical
GaN Transistors on Bulk-GaN Substrates,IEEE Electron Device Letters,Vol.35,
No.9,pp.939-941,2014。
Traditional GaN base current apertures heterojunction transistor is based on GaN base wide bandgap semiconductor heterojunction structure, packet
It includes: substrate 1, drift layer 2, aperture layer 3, left and right two symmetrical current barrier layers 4, aperture 5, channel layer 6 and barrier layer 7；Gesture
Two sides above barrier layer 7 deposit source 9, are deposited with grid 10 on the barrier layer 7 between source electrode 9, pass through injection below source electrode 9
Two injection regions 8 are formed, substrate 1 is deposited with ohmic drain 11 below, as shown in Figure 1.
By the theory and experimental study of more than ten years, researchers' discovery, the heterogeneous crystallization of above-mentioned tradition GaN base current apertures
There are inherent shortcoming in body pipe structure, it is extremely uneven to will lead to electric-field intensity distribution in device, especially current barrier layer with
There are high peak electric fields in the semiconductor material of aperture area interface close beneath, so as to cause device premature breakdown.
This to be difficult to realize the thickness by increasing N-shaped GaN drift layer in actual process come the breakdown voltage of constantly improve device.Cause
This, the breakdown voltage of traditional structure GaN base current apertures heterojunction transistor is not generally high.In order to obtain higher device breakdown
Voltage, and can be by increasing the thickness of N-shaped GaN drift layer come the breakdown voltage of constantly improve device, 2013, Zhongda
Li et al. people has studied a kind of enhanced GaN base current apertures heterojunction transistor based on superjunction using technology of numerical simulation, grinds
Study carefully the result shows that super-junction structure can effectively inside modulation device field distribution, make when in OFF state device inside electric field everywhere
Intensity tends to be uniformly distributed, therefore device electric breakdown strength is up to 5~20kV, and when using 3 μm of attached columns wide breakdown voltage for
12.4kV, and conducting resistance is only 4.2m Ω cm2, referring to Design and Simulation of 5-20-kV GaN
Enhancement-Mode Vertical Superjunction HEMT,IEEE Transactions on Electron
Decices,Vol.60,No.10,pp.3230-3237,2013.Using superjunction GaN base current apertures heterojunction transistor from
High-breakdown-voltage can be theoretically obtained, and can realize that breakdown voltage is constantly improve with the increase of N-shaped GaN drift layer thickness,
It is to have reported the highest a kind of very effective high power device structure of breakdown voltage in document both at home and abroad at present.
With the extension of application field, in many technology necks such as electric car, S power-like amplifier, power management system
In domain, in order to effectively realize power conversion and control, there is an urgent need to the high performance power devices with two-way blocking-up ability, i.e.,
Device will not only have very strong forward blocking ability, i.e. forward break down voltage, also have very strong reverse blocking capability simultaneously,
Namely wish that device has very high negative drain breakdown voltage, i.e. breakdown reverse voltage under OFF state.And existing tradition
GaN base current apertures heterojunction transistor is all made of ohmic drain, when device drain applies low-down backward voltage, device
In current barrier layer will fail, form very big drain-source leakage current, and with the increase of drain electrode backward voltage, device
Grid positive can also be opened, and by very big gate current, eventually lead to component failure.Therefore, existing traditional GaN base current aperture
Diameter heterojunction transistor cannot achieve reverse blocking function.
Summary of the invention
It is an object of the invention to be directed to the deficiency of above-mentioned prior art, a kind of gallium nitride base based on suspension superjunction is provided
Hetero-junctions current apertures device and preparation method thereof to improve the forward break down voltage and breakdown reverse voltage of device, and is realized
The sustainable increase of forward break down voltage and breakdown reverse voltage, improves the breakdown characteristics of device.
To achieve the above object, the technical scheme of the present invention is realized as follows:
One, device architecture
A kind of gallium nitride radical heterojunction current apertures device based on suspension superjunction, comprising: substrate 1, drift layer 4, aperture
Layer 5, the two symmetrical current barrier layers 6 in left and right, channel layer 8 and barrier layer 9, the lower part of substrate 1 are equipped with Schottky drain 13, gesture
Two sides deposit in barrier layer 9 passes through two injection regions 10 of ion implanting formation, source electrode there are two source electrode 11 below two source electrodes 11
Between barrier layer on be deposited with grid 12, aperture 7 is formed between two symmetrical current barrier layers 6, it is characterised in that:
Between the substrate 1 and drift layer 4, if there are two the column construction using p-type GaN material, i.e. two 2 Hes of P column
One column construction using N-shaped GaN material, i.e. N column 3, and two P columns 2 are located at the left and right sides of N column 3, the thickness of each P column 2
It spends identical as the thickness of N column 3.
Two, production method
The method that the present invention makes the gallium nitride radical heterojunction current apertures device based on suspension superjunction, including following mistake
Journey:
A. substrate 1 is made:
Use doping concentration for 5 × 1015~5 × 1017cm-3, thickness U is 3~30 μm, width is 2~20 μm N-shaped GaN
Material does substrate 1；
B. P column 2 and N column 3 are made；
B1) in 1 top first time extension a layer thickness H of substrate1It is 5 × 10 for 5~10 μm, doping concentration15~5 ×
1017cm-3N-shaped GaN material, and mask is made in this layer of N-shaped GaN material, using the mask in this layer of N-shaped GaN material
Two side position implanted with p-type impurity, with formed average doping concentration be 5 × 1015~5 × 1017cm-3Two p-type dopings
One area, the thickness H in two firstth areasP1It is 5~10 μm, width WP1It is 0.5~5 μm, and HP1=H1；
B2) in the N-shaped GaN material top of step B1) extension and two the first area tops, second of extension a layer thickness H2
It is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and make and cover in this layer of N-shaped GaN material
Mould, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, to form average doping concentration be 5 ×
1015~5 × 1017cm-3Two p-type dopings the secondth area, the thickness H in two secondth areasP2It is 5~10 μm, width WPFor
0.5~5 μm, H2=HP2；
B3) in the N-shaped GaN material top of step B2) extension and two the second area tops, third time extension a layer thickness H3
It is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and make and cover in this layer of N-shaped GaN material
Mould, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, to form average doping concentration be 5 ×
1015~5 × 1017cm-3Two p-type dopings third area, HP3It is 5~10 μm, width WPIt is 0.5~5 μm, H3=HP3；
B4) and so on ..., in two m-1 that the N-shaped GaN material top of a preceding extension and previous step are formed
M extension a layer thickness H of Qu ShangmIt is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and
Mask is made in this layer of N-shaped GaN material, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material,
To form average doping concentration as 5 × 1015~5 × 1017cm-3, thickness HPmFor 5~10 μm, width WPFor two of 0.5~5 μm
The area m of p-type doping, and Hm=HPm, m is for the integer greater than zero and according to the determination of actual fabrication technique；
So far, the left P column 2 in left side is collectively formed in firstth area in left side in step B, the secondth area, third area to the area m, right
The right P column 2 on right side is collectively formed in the firstth area, the secondth area, the third area to the area m of side, and the width of each P column 2 is WP, as
0.5~5 μm, thickness H meets: H=HP1+HP2+…+HPm, value is 5~40 μm；
The part for not carrying out p-type doping in step B in the GaN material of all extensions forms whole N column 3, the N column 3
Thickness is identical as the thickness H of P column 2, width WN=2WP；
C. it in the upper epitaxial N-shaped GaN semiconductor material of N column 3 and two P columns 2, forms thickness L and is 3~25 μm, adulterates
Concentration is 1 × 1015~1 × 1017cm-3Drift layer 4；
D. it in the upper epitaxial N-shaped GaN semiconductor material of drift layer 4, is formed with a thickness of 0.5~2 μm, doping concentration 1
×1016~1 × 1018cm-3Aperture layer 5；
E. mask is made on aperture layer 5, using two side position implanted with p-type impurity of the mask in aperture layer, with system
Make that thickness is identical as aperture layer thickness, width a is 0.5~8 μm, the doping concentration of n-type impurity is 1 × 1018~5 × 1018cm-3
Current barrier layer 6, aperture 7 is formed between two symmetrical current barrier layers 6；
F. in two current barrier layers 6 and the 7 upper epitaxial GaN semiconductor material of aperture between them, formed with a thickness of
0.04~0.2 μm of channel layer 8；
G. in 8 upper epitaxial GaN base semiconductor material with wide forbidden band of channel layer, the barrier layer 9 with a thickness of 5~50nm is formed；
H. mask is made on the top of barrier layer 9, using two side position implant n-type impurity of the mask in barrier layer,
To make doping concentration as 1 × 1019~1 × 1021cm-3Injection region 10, wherein the depth of two injection regions is all larger than potential barrier
Thickness degree, and less than the overall thickness of both channel layer and barrier layer；
I. mask is made on the top of barrier layer 9 and injection region 10, deposits gold on two injection regions top using the mask
Belong to, to make source electrode 11；
J. mask is made on 9 top of barrier layer and 11 top of source electrode, utilizes potential barrier of the mask between two source electrodes
Metal is deposited on layer 9, to make grid 12, in the horizontal direction overlapping is deposited between grid 12 and two current barrier layers 6,
Overlapping length is greater than 0 μm；
K. metal is deposited on the back side of substrate 1, to make Schottky drain 13, completes the production of entire device.
Device of the present invention has the advantage that compared with traditional GaN base current apertures heterojunction transistor
1. realizing continuing to increase for forward break down voltage.
The present invention between current barrier layer and substrate due to being equipped with P column and N column, the suspension of the P column and N column, that is, of the invention
Super-junction structure, compared to existing super-junction structure, in forward blocking situation, P column, N column and drift layer will form depletion region,
That is high field region, thus device architecture of the present invention can effectively modulated forward block when device internal electric field be distributed, improving device just
To breakdown voltage.
In forward blocking, by increasing the thickness of P column, depletion region is formed by by P column, N column and drift layer
Area can be dramatically increased persistently, and by optimize device architecture of the present invention may make drift layer in device, P column, in N column everywhere
Peak electric field is approximately equal, and is less than the breakdown electric field of GaN base semiconductor material with wide forbidden band, so that forward break down voltage can be realized
Continue to increase.
2. realizing continuing to increase for breakdown reverse voltage.
The present invention allows device drain to bear backward voltage due to using Schottky drain.On this basis, originally
Invention between current barrier layer and substrate due to being equipped with P column and N column, compared to existing super-junction structure, the P column, N column and Xiao
After Te Ji drain electrode organically combines, in reverse blocking situation, P column, N column and substrate will form depletion region, can effectively modulate
Device internal electric field is distributed when reverse blocking, improves the breakdown reverse voltage of device；Meanwhile in reverse blocking, pass through
Increase the thickness of P column, the area of the depletion region formed by P column, N column and substrate can be dramatically increased persistently, and originally by optimization
Invention device architecture may make that device substrate, drift layer, P column, peak electric field is approximately equal everywhere in N column, and it is wide to be less than GaN base
The breakdown electric field of bandgap semiconductor material, so that continuing to increase for breakdown reverse voltage can be realized.
Technology contents and effect of the invention are further illustrated below in conjunction with drawings and examples.
Detailed description of the invention
Fig. 1 is the structure chart of traditional GaN base current apertures heterojunction transistor；
Fig. 2 is the structure chart of the gallium nitride radical heterojunction current apertures device the present invention is based on suspension superjunction；
Fig. 3 is the flow chart of gallium nitride radical heterojunction current apertures device of the present invention production based on suspension superjunction；
Fig. 4 is the schematic diagram that N column and two P columns are made in the present invention；
Fig. 5 is to traditional GaN base current apertures heterojunction transistor and the resulting forward blocking feelings of device simulation of the present invention
Two dimensional electric field distribution map when condition；
Fig. 6 is the Vertical one dimensional distribution map of the electric field of the left current barrier layer right hand edge of each device along Fig. 5；
P column on the left of two dimensional electric field distribution map and device when Fig. 7 is device simulation of the present invention resulting reverse blocking situation
Vertical one dimensional distribution map of the electric field near right hand edge.
Specific embodiment
Referring to Fig. 2, the gallium nitride radical heterojunction current apertures device the present invention is based on suspension superjunction is based on the wide taboo of GaN base
Improvement with semiconductor heterostructure comprising: two substrate 1, drift layer 4, aperture layer 5, left and right symmetrical current blockings
Layer 6, channel layer 8 and barrier layer 9, two sides deposit source 11 to the barrier layer 9 above, are equipped with below two source electrodes 11 and pass through ion
The injection region 10 formed is injected, grid 12 is deposited on the barrier layer between source electrode 11, is formed between two symmetrical barrier layers 6
Aperture 5 is equipped with Schottky drain 13 below substrate 1, in which:
The substrate 1, using N-shaped GaN material, and doping concentration is 5 × 1015~5 × 1017cm-3, the thickness U of substrate 1
It is 3~30 μm, width is 2~20 μm, and the top of substrate 1 is equipped with a N column 3 and two symmetrical P columns 2, and two 2, P column
In the two sides of N column 3；
Described two P columns 2, using p-type GaN material, doping concentration is 5 × 1015~5 × 1017cm-3；Each P column 2
Thickness H is 5~40 μm, width WPIt is 0.5~5 μm；
The N column 3 is located between two P columns 2, and using N-shaped GaN material, doping concentration range is identical as P column, N column 3
With the thickness having the same of P column 2, width WNFor 2 width W of P columnPTwice, i.e. WN=2WP；
The drift layer 4, positioned at the top of N column 3 and P column 2, using N-shaped GaN material, doping concentration is 1 × 1015~1
×1017cm-3, thickness L is 3~25 μm；
The aperture layer 5, using N-shaped GaN material, with a thickness of 0.5~2 μm, adulterates dense positioned at the top of drift layer 4
Degree is 1 × 1016~1 × 1018cm-3；
The current barrier layer 6, the two sides in aperture layer 5, using p-type GaN material, with a thickness of 0.5~2 μm,
Width a is 0.5~8 μm, and the doping concentration of n-type impurity is 1 × 1018~5 × 1018cm-3；
The channel layer 8 is located at 7 top of two current barrier layers 6 and aperture, using N-shaped GaN material, with a thickness of
0.04~0.2 μm；
The barrier layer 9 is located at 8 top of channel layer, by the identical or different GaN base wide bandgap semiconductor material of several layers
Material composition, with a thickness of 5~50nm；
In the horizontal direction overlapping is deposited between the grid 12, with two current barrier layers 6, overlapping length is greater than
0μm；
The Schottky drain 13 is located at substrate 1 in the following, the Schottky drain 13 uses work content using Schottky junction structure
Number is greater than the metal of 4.5eV.
Referring to Fig. 3, the present invention makes the process of the gallium nitride radical heterojunction current apertures device based on suspension superjunction, provides
Following three kinds of embodiments:
Embodiment one: the gallium nitride radical heterojunction current apertures device based on suspension superjunction that production P pillar height is 5 μm.
Step 1. makes substrate 1, such as Fig. 3 a.
Use doping concentration for 5 × 1017cm-3, thickness U is 3 μm, width is 2 μm N-shaped GaN material do substrate 1；
Step 2. makes P column 2 and N column 3, such as Fig. 3 b.
Referring to Fig. 5, this step is implemented as follows:
2.1) metal organic chemical vapor deposition technology is used, in substrate 1 upper first time extension a layer thickness H1For 5 μ
M, doping concentration is 5 × 1017cm-3N-shaped GaN material；
2.2) mask is made in the N-shaped GaN material of step 2.1) extension, reuses ion implantation technique in the n of this layer
Two side position implanted with p-type impurity in type GaN material, to form average doping concentration as 5 × 1017cm-3, thickness HP1For 5 μm,
Width WPFor 0.5 μm of two the firstth areas of p-type doping；
So far, the left P column 2 in step 2 on the left of the firstth area formation in left side, firstth area on right side form the right P column on right side
2, the width W of each P column 2PIt is 0.5 μm, thickness H is 5 μm；P-type doping is not carried out in the GaN material of all extensions of step 2
Part forms whole N column 3, the N column 3 with a thickness of 5 μm, width WNIt is 1 μm；
The process conditions of metal organic chemical vapor deposition technology are as follows: temperature is 950 DEG C, pressure 40Torr, with
SiH4For doped source, hydrogen flowing quantity 4000sccm, ammonia flow 4000sccm, gallium source flux is 100 μm of ol/min.
Step 3. makes drift layer 4, such as Fig. 3 c.
Using metal organic chemical vapor deposition technology, portion epitaxial thickness L on two P columns 2 and N column 3 is 3 μm,
Doping concentration is 1 × 1017cm-3N-Type GaN material forms drift layer 4, in which:
The process conditions that extension uses are as follows: temperature is 950 DEG C, pressure 40Torr, with SiH4For doped source, hydrogen flowing quantity
For 4000sccm, ammonia flow 4000sccm, gallium source flux is 100 μm of ol/min.
Step 4. extension N-shaped GaN on drift layer forms aperture layer 5, such as Fig. 3 d.
Using metal organic chemical vapor deposition technology, on drift layer 2 epitaxial thickness be 0.5 μm, doping concentration 1
×1016cm-3N-shaped GaN material, formed aperture layer 5, in which:
The process conditions that extension uses are as follows: temperature is 950 DEG C, pressure 40Torr, with SiH4For doped source, hydrogen flowing quantity
For 4000sccm, ammonia flow 4000sccm, gallium source flux is 100 μm of ol/min.
Step 5. makes current barrier layer 6, such as Fig. 3 e.
5.1) mask is made on aperture layer 5；
5.2) ion implantation technique is used, the two side position implanted with p-type impurity Mg in aperture layer are formed with a thickness of 0.5 μ
M, width a are 0.5 μm, and n-type impurity doping concentration is 1 × 1018cm-3Two current barrier layers 6, two symmetrical electric currents resistances
Aperture 7 is formed between barrier 6.
Step 6. extension GaN material makes channel layer 8, such as Fig. 3 f.
Using molecular beam epitaxy technique, two current barrier layers 6 and aperture 7 upper epitaxial with a thickness of 0.04 μm
GaN material forms channel layer 8；
The molecular beam epitaxy technique, process conditions are as follows: vacuum degree is less than or equal to 1.0 × 10-10Mbar, radio-frequency power
For 400W, reactant uses N2, the high-purity source Ga.
Step 7. extension Al0.5Ga0.5N makes barrier layer 9, such as Fig. 3 g.
The Al that epitaxial thickness is 5nm on channel layer 8 using molecular beam epitaxy technique0.5Ga0.5N material forms barrier layer
9, in which:
The process conditions of molecular beam epitaxy are as follows: vacuum degree is less than or equal to 1.0 × 10-10Mbar, radio-frequency power 400W, instead
Answer agent using N2, the high-purity source Ga, high-purity source Al；
Step 8. makes left and right two injection regions 10, such as Fig. 3 h.
8.1) mask is made on 9 top of barrier layer；
8.2) ion implantation technique, the two sides implant n-type impurity Si in barrier layer, to form depth as 0.01 μ are used
M, doping concentration are 1 × 1019cm-3Injection region 10；
8.3) rapid thermal annealing is carried out at a temperature of 1200 DEG C.
Step 9. makes source electrode 11, such as Fig. 3 i.
9.1) mask is made on two injection regions, 10 top and 9 top of barrier layer；
9.2) electron beam evaporation technique is used, deposit Ti/Au/Ni combines metal on two injection regions top, forms source electrode
11, in which: the metal deposited, from bottom to top, Ti with a thickness of 0.02 μm, Au with a thickness of 0.3 μm, Ni with a thickness of 0.05
μm；
The process conditions of electron beam evaporation are as follows: vacuum degree is less than 1.8 × 10-3Pa, power bracket are 200~1000W, evaporation
Rate is less than
Step 10. makes grid 12, such as Fig. 3 j.
10.1) 9 top of barrier layer between 11 top of source electrode and source electrode makes mask；
10.2) electron beam evaporation technique is used, successively deposits W metal, Au, Ni, shape on the barrier layer 9 between source electrode
At grid 12, in which: from bottom to top, Ni is 0.02 μm to the metal thickness deposited, Au is 0.2 μm, Ni is 0.04 μm；
The process conditions of electron beam evaporation are as follows: vacuum degree is less than 1.8 × 10-3Pa, power bracket are 200~1000W, evaporation
Rate is less than
Step 11. makes Schottky drain 13, such as Fig. 3 k.
Using electron beam evaporation technique, Ni metal is deposited at the back side of entire substrate 1, forms Schottky drain 13, in which:
Ni with a thickness of 0.7 μm, complete the production of entire device.
Deposit process conditions used by metal are as follows: vacuum degree is less than 1.8 × 10-3Pa, power bracket are 200~1000W,
Evaporation rate is less than
Embodiment two: the gallium nitride radical heterojunction current apertures device based on suspension superjunction that production P pillar height is 25 μm.
First step makes substrate 1, such as Fig. 3 a.
Use doping concentration for 5 × 1016cm-3, thickness U is 15 μm, width is 12 μm N-shaped GaN material do substrate 1；
Second step makes P column 2 and N column 3, such as Fig. 3 b.
Referring to Fig. 5, this step is implemented as follows:
2.1) metal organic chemical vapor deposition technology is used, in substrate 1 upper first time extension a layer thickness H1For 8 μ
M, doping concentration is 5 × 1016cm-3N-shaped GaN material；
2.2) mask is made in the N-shaped GaN material of step 2.1) extension, reuses ion implantation technique in the n of this layer
Two side position implanted with p-type impurity in type GaN material, to form average doping concentration as 5 × 1016cm-3, thickness HP1For 8 μm,
Width WPFor 3 μm of two the firstth areas of p-type doping；
2.3) in the N-shaped GaN material top of step 2.1) extension and two second of the first area top extension a layer thickness
H2It is 5 × 10 for 8 μm, doping concentration16cm-3N-shaped GaN material；
2.4) mask is made in the N-shaped GaN material of step 2.3) extension, reuses ion implantation technique in this layer of N-shaped
Two side position implanted with p-type impurity in GaN material, to form average doping concentration as 5 × 1016cm-3, thickness HP2For 8 μm, width
Spend WPFor the secondth area of 3 μm of two p-type dopings；
2.5) in the N-shaped GaN material top of step 2.3) extension and two second area top third time extension a layer thickness
H3It is 5 × 10 for 9 μm, doping concentration16cm-3N-shaped GaN material；
2.6) mask is made in the N-shaped GaN material of step 2.5) extension, reuses ion implantation technique in this layer of N-shaped
Two side position implanted with p-type impurity in GaN material, to form average doping concentration as 5 × 1016cm-3, thickness HP3For 9 μm, width
Spend WPFor the third area of 3 μm of two p-type dopings；
So far, the firstth area, the secondth area and the third area in left side are collectively formed the left P column 2 in left side in second step, and the of right side
The right P column 2 on right side, the width W of each P column 2 is collectively formed in one area, the secondth area and third areaPIt is 3 μm, thickness H=HP1+HP2+
HP3, i.e., 25 μm, the part for not carrying out p-type doping in second step in the GaN material of all extensions forms whole N column 3, the N column 3
With a thickness of 25 μm, width WNIt is 6 μm；
The process conditions of metal organic chemical vapor deposition technology are as follows: temperature is 950 DEG C, pressure 40Torr, with
SiH4For doped source, hydrogen flowing quantity 4000sccm, ammonia flow 4000sccm, gallium source flux is 100 μm of ol/min.
Third step makes drift layer 4, such as Fig. 3 c.
It is 950 DEG C in temperature, pressure 40Torr, with SiH4For doped source, hydrogen flowing quantity 4000sccm, ammonia flow
For 4000sccm, gallium source flux is under the process conditions of 100 μm of ol/min, using metal organic chemical vapor deposition technology,
In two P columns 2 and the upper epitaxial thickness L of N column 3 is 12 μm, doping concentration is 9 × 1016cm-3N-shaped GaN material, formed drift
Move layer 4.
4th step extension N-shaped GaN on drift layer forms aperture layer 5, such as Fig. 3 d.
It is 950 DEG C in temperature, pressure 40Torr, with SiH4For doped source, hydrogen flowing quantity 4000sccm, ammonia flow
For 4000sccm, gallium source flux is under the process conditions of 100 μm of ol/min, using metal organic chemical vapor deposition technology,
Epitaxial thickness is 1.1 μm on drift layer 4, doping concentration is 1.1 × 1017cm-3N-shaped GaN material, formed aperture layer 5.
5th step makes current barrier layer 6, such as Fig. 3 e.
A mask 5a) is made on aperture layer 5；
Ion implantation technique 5b) is used, the two side position implanted with p-type impurity Mg in aperture layer are formed with a thickness of 1.1 μ
M, width a are 5 μm, doping concentration is 3 × 1018cm-3Two current barrier layers 6, between two symmetrical current barrier layers 6
Form aperture 7.
6th step extension GaN material makes channel layer 8, such as Fig. 3 f.
It is less than or equal to 1.0 × 10 in vacuum degree-10Mbar, radio-frequency power 400W, reactant use N2, the high-purity source Ga
Under process conditions, using molecular beam epitaxy technique, two current barrier layers 6 and aperture 7 upper epitaxial with a thickness of 0.15 μm
GaN material, formed channel layer 8.
7th step extension Al0.3Ga0.2N makes barrier layer 9, such as Fig. 3 g.
It is less than or equal to 1.0 × 10 in vacuum degree-10Mbar, radio-frequency power 400W, reactant use N2, the high-purity source Ga, height
Under the process conditions of the pure source Al, using molecular beam epitaxy technique on channel layer 8 epitaxial thickness be 15nm Al0.3Ga0.2N material,
Form barrier layer 9.
8th step makes left and right two injection regions 10, such as Fig. 3 h.
8a) mask is made on 9 top of barrier layer；
Ion implantation technique 8b) is used, the two sides implant n-type impurity Si in barrier layer, forming depth is 0.02 μm, is mixed
Miscellaneous concentration is 9 × 1019cm-3Injection region 10；
8c) rapid thermal annealing is carried out at a temperature of 1200 DEG C.
9th step makes source electrode 11, such as Fig. 3 i.
9a) mask is made on two injection regions, 10 top and 9 top of barrier layer；
9b) in vacuum degree less than 1.8 × 10-3Pa, power bracket are 200~1000W, and evaporation rate is less thanTechnique item
Under part, using electron beam evaporation technique, on two injection regions top, deposit Ti/Au/Ni combines metal, forms source electrode 11, in which:
The metal deposited, from bottom to top, Ti with a thickness of 0.02 μm, Au with a thickness of 0.3 μm, Ni with a thickness of 0.05 μm.
Tenth step makes grid 12, such as Fig. 3 j.
10a) mask is made on the top of source electrode 11 and barrier layer 9；
10b) in vacuum degree less than 1.8 × 10-3Pa, power bracket are 200~1000W, and evaporation rate is less thanTechnique
Under the conditions of, using electron beam evaporation technique, W metal, Au, Ni are successively deposited in cap layers 10, form grid 12, in which: formed sediment
From bottom to top, Ni is 0.02 μm to long-pending metal thickness, Au is 0.2 μm, Ni is 0.04 μm, grid 12 and two current barrier layers 6
Between overlapping length in the horizontal direction be 0.5 μm.
11st step makes Schottky drain 13, such as Fig. 3 k.
In vacuum degree less than 1.8 × 10-3Pa, power bracket are 200~1000W, and evaporation rate is less thanProcess conditions
Under, using electron beam evaporation technique, Pt metal is deposited at the back side of entire substrate 1, forms Schottky drain 13, in which: Pt's
With a thickness of 0.7 μm, the production of entire device is completed.
Embodiment three: the gallium nitride radical heterojunction current apertures device based on suspension superjunction that production P pillar height is 40 μm.
Step A. makes substrate 1, such as Fig. 3 a.
Use doping concentration for 5 × 1015cm-3, thickness U is 30 μm, width is 20 μm N-shaped GaN material do substrate 1；
Step B. makes P column 2 and N column 3, such as Fig. 3 b.
Referring to Fig. 5, this step is implemented as follows:
B1 metal organic chemical vapor deposition technology) is used, in substrate 1 upper first time extension a layer thickness H1For 10 μ
M, doping concentration is 5 × 1017cm-3N-shaped GaN material；
B2 mask) is made in the N-shaped GaN material of step B1) extension, reuses ion implantation technique in the N-shaped of this layer
Two side position implanted with p-type impurity in GaN material, to form average doping concentration as 5 × 1015cm-3, thickness HP1For 10 μm, width
Spend WPFor 5 μm of two the firstth areas of p-type doping；
B3) in the N-shaped GaN material top of step B1) extension and two second of the first area top extension a layer thickness H2
It is 5 × 10 for 10 μm, doping concentration15cm-3N-shaped GaN material；
B4 mask) is made in the N-shaped GaN material of step B3) extension, reuses ion implantation technique in this layer of N-shaped GaN
Two side position implanted with p-type impurity in material, to form average doping concentration as 5 × 1015cm-3, thickness HP2For 10 μm, width
WPFor the secondth area of 5 μm of two p-type dopings；
B5) in the N-shaped GaN material top of step B3) extension and two second area top third time extension a layer thickness H3
It is 5 × 10 for 10 μm, doping concentration15cm-3N-shaped GaN material；
B6 mask) is made in the N-shaped GaN material of step B5) extension, reuses ion implantation technique in this layer of N-shaped GaN
Two side position implanted with p-type impurity in material, to form average doping concentration as 5 × 1015cm-3, thickness HP3For 10 μm, width
WPFor the third area of 5 μm of two p-type dopings；
B7) in the N-shaped GaN material top of step B5) extension and the extension a layer thickness H of Liang Ge third area top the 4th time4
It is 5 × 10 for 10 μm, doping concentration15cm-3N-shaped GaN material；
B8 mask) is made in the N-shaped GaN material of step B7) extension, reuses ion implantation technique in this layer of N-shaped GaN
Two side position implanted with p-type impurity in material, to form average doping concentration as 5 × 1015cm-3, thickness HP4For 10 μm, width
WPFor the 4th area of 5 μm of two p-type dopings；
So far, in stepb left side the firstth area, the secondth area, third area and the 4th area be collectively formed left side left P column 2,
The right P column 2 on right side, the width W of each P column 2 is collectively formed in firstth area, the secondth area, third area and the 4th area on right sidePIt is 5 μm,
Thickness H=HP1+HP2+HP3+HP4, i.e., 40 μm, the part for not carrying out p-type doping in step B in the GaN material of all extensions is formed
Whole N column 3, the N column 3 with a thickness of 40 μm, width WNIt is 10 μm；
The process conditions of metal organic chemical vapor deposition technology are as follows: temperature is 950 DEG C, pressure 40Torr, with
SiH4For doped source, hydrogen flowing quantity 4000sccm, ammonia flow 4000sccm, gallium source flux is 100 μm of ol/min.
Step C. uses temperature for 950 DEG C, pressure 40Torr, with SiH4For doped source, hydrogen flowing quantity 4000sccm,
Ammonia flow is 4000sccm, and gallium source flux is the process conditions of 100 μm of ol/min, uses metal organic chemical vapor deposition
Technology, on two 2 tops of P column and 3 upper epitaxial thickness L of N column is 25 μm, doping concentration is 1 × 1015cm-3N-shaped GaN material
Material forms drift layer 4, such as Fig. 3 c.
Step D. uses temperature for 950 DEG C, pressure 40Torr, with SiH4For doped source, hydrogen flowing quantity 4000sccm,
Ammonia flow is 4000sccm, and gallium source flux is the process conditions of 100 μm of ol/min, uses metal organic chemical vapor deposition
Technology, epitaxial thickness is 2 μm on drift layer 4, doping concentration is 1 × 1018cm-3N-shaped GaN material, formed aperture layer 5, such as
Fig. 3 d.
Step E. first makes a mask on aperture layer 5, reuses ion implantation technique, the two sides position in aperture layer
Implanted with p-type impurity Mg is set, is formed with a thickness of 2 μm, width a is 8 μm, and doping concentration is 5 × 1018cm-3Two current barrier layers
6, aperture 7 is formed between two symmetrical current barrier layers 6, such as Fig. 3 e.
Step F. is less than or equal to 1.0 × 10 using vacuum degree-10Mbar, radio-frequency power 400W, reactant use N2, it is high
The process conditions in the pure source Ga, using molecular beam epitaxy technique, two current barrier layers 6 and aperture 7 upper epitaxial with a thickness of
0.2 μm of GaN material forms channel layer 8, such as Fig. 3 f.
Step G. is less than or equal to 1.0 × 10 using vacuum degree-10Mbar, radio-frequency power 400W, reactant use N2, it is high
The process conditions in the pure source Ga, high-purity source Al, using molecular beam epitaxy technique, epitaxial thickness is 50nm's on channel layer 8
Al0.1Ga0.9N material forms barrier layer 9, such as Fig. 3 g.
Step H. first makes mask on the top of barrier layer 9, reuses ion implantation technique, the two sides note in barrier layer
Enter p-type impurity Si, forms that depth is 0.06 μm, doping concentration is 1 × 1021cm-3Injection region 10, finally in 1200 DEG C of temperature
Lower carry out rapid thermal annealing, such as Fig. 3 h.
Step I. first makes mask on two injection regions, 10 top and 9 top of barrier layer, then using vacuum degree less than 1.8 ×
10-3Pa, power bracket are 200~1000W, and evaporation rate is less thanProcess conditions, using electron beam evaporation technique,
Two injection regions top deposits Ti/Au/Ni and combines metal, forms source electrode 11, in which: the metal deposited, from bottom to top, Ti's
With a thickness of 0.02 μm, Au with a thickness of 0.3 μm, Ni with a thickness of 0.05 μm, such as Fig. 3 i.
Step J. first makes mask on the top of source electrode 11 and barrier layer 9, then using vacuum degree less than 1.8 × 10-3Pa, function
Rate range is 200~1000W, and evaporation rate is less thanProcess conditions, using electron beam evaporation technique, between source electrode
W metal, Au, Ni are successively deposited on barrier layer 9, form grid 12, in which: from bottom to top, Ni is the metal thickness deposited
0.02 μm, Au be 0.2 μm, Ni is 0.04 μm, such as Fig. 3 j.
Step K. first makes mask at the back side of substrate 1, then using vacuum degree less than 1.8 × 10-3Pa, power bracket are
200~1000W, evaporation rate are less thanProcess conditions are successively formed sediment using electron beam evaporation technique at the back side of entire substrate 1
Product Ni, Au metal, formed Schottky drain 13, in which: Ni with a thickness of 0.05 μm, Au with a thickness of 0.7 μm, complete entire device
The production of part, such as Fig. 3 k.
Effect of the invention can be further illustrated by following emulation.
Emulation 1: to traditional GaN base current apertures heterojunction transistor and device of the present invention in forward blocking situation two
Dimension field distribution is emulated, and as a result such as Fig. 5, wherein Fig. 5 (a) is traditional devices, forward break down voltage 630V, Fig. 5 (b)
For device of the present invention, forward break down voltage 1890V.
It can be seen from Fig. 5 (a) when forward blocking situation, electric-field intensity distribution is extremely uneven in traditional devices, in electric current
There is high peak electric field in the semiconductor material of barrier layer and aperture area interface close beneath, so as to cause device
Premature breakdown, the breakdown voltage of device are only 630V.And when can be seen that forward blocking situation from Fig. 5 (b), device of the present invention
Middle field distribution is more uniform, and very big by the area that P column, N column and drift layer are formed by depletion region, can bear higher
The breakdown voltage of forward break down voltage, device can be up to 1890V.Vertical one dimensional field distribution as shown in connection with fig. 6 can be more
Add and significantly find out, device architecture of the present invention can more efficiently modulated forward block when device internal electric field be distributed, improve
Device inside Electric Field Numerical, and make device inside field distribution more flat, therefore, the forward blocking ability of device of the present invention
It is significantly stronger than the forward blocking ability of traditional devices.
Emulation 2: emulating the reverse blocking voltage of device of the present invention, and as a result such as Fig. 7, wherein Fig. 7 (a) is reversed resistance
Two dimensional electric field distribution map when disconnected situation, Fig. 7 (b) are the Vertical one dimensional distribution map of the electric field on the left of device near the right hand edge of P column.
Due to using suspension super-junction structure, under the reverse blocking state of -2874V, this hair it can be seen from Fig. 7 (a)
The high field region area of bright device inside is larger, and combines Fig. 7 (b) as it can be seen that the field distribution in device of the present invention is very uniform, explanation
Device of the present invention can effectively realize reverse blocking function.
Above description is only several specific embodiments of the invention, is not construed as limiting the invention, it is clear that for this
It, can be without departing substantially from the principle and scope of the present invention after having understood the content of present invention and principle for the professional in field
In the case where, various modifications and variations in form and details are carried out according to the method for the present invention, but these are based on the present invention
Modifications and variations still within the scope of the claims of the present invention.
Claims (8)
1. a kind of gallium nitride radical heterojunction current apertures device based on suspension superjunction, comprising: substrate (1), drift layer (4), hole
Diameter layer (5), the two symmetrical current barrier layers (6) in left and right, channel layer (8) and barrier layer (9), the lower part of substrate (1) are equipped with Xiao
Te Ji drains (13), and there are two source electrode (11), two source electrodes (11) lower sections to pass through ion implanting for the two sides deposit on barrier layer (9)
Form two injection regions (10), be deposited with grid (12) on the barrier layer between source electrode, two symmetrical current barrier layers (6) it
Between formed aperture (7), it is characterised in that:
Between the substrate (1) and drift layer (4), if there are two the column construction using p-type GaN material, i.e. two P columns (2)
The column construction of N-shaped GaN material, i.e. N column (3) are used with one, and two P columns (2) are located at the left and right sides of N column (3), each
The thickness of P column (2) is identical as the thickness of N column (3).
2. device according to claim 1, it is characterised in that the thickness U of substrate (1) is determining according to actual fabrication technique,
Value range is 3~30 μm.
3. device according to claim 1, it is characterised in that Schottky drain (13) is greater than the gold of 4.5eV using work function
Belong to.
4. device according to claim 1, it is characterised in that the width W of each P column (2)PIt is 0.5~5 μm.
5. device according to claim 1, it is characterised in that the width W of N column (3)NFor each P column (2) width WPTwo
Times, i.e. WN=2WP, the thickness H of N column (3) is 5~40 μm.
6. device according to claim 1, it is characterised in that P column (2) is identical as the doping concentration of N column (3), be 5 ×
1015~5 × 1017cm-3。
7. device according to claim 1, it is characterised in that the doping concentration of drift layer (4) is 1 × 1015~1 ×
1017cm-3, thickness L is 3~25 μm.
8. a kind of method for making the gallium nitride radical heterojunction current apertures device based on suspension superjunction, comprises the following processes:
A. substrate (1) is made:
Use doping concentration for 5 × 1015~5 × 1017cm-3, thickness U is 3~30 μm, width is 2~20 μm N-shaped GaN material
Do substrate (1)；
B. P column (2) and N column (3) are made；
B1) in substrate (1) top first time extension a layer thickness H1It is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3
N-shaped GaN material, and make mask in this layer of N-shaped GaN material, utilize two sides of the mask in this layer of N-shaped GaN material
Position implanted with p-type impurity, to form average doping concentration as 5 × 1015~5 × 1017cm-3Two p-type dopings the firstth area,
The thickness H in the firstth area of two p-type dopingsP1It is 5~10 μm, width WPIt is 0.5~5 μm, and HP1=H1；
B2) in the first area top on the N-shaped GaN material top of step B1) extension and two p-type dopings, second one layer of extension
Thickness H2It is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and in this layer of N-shaped GaN material
Mask is made, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, to form average doping concentration
It is 5 × 1015~5 × 1017cm-3Two p-type dopings the secondth area, the thickness H in two secondth areasP2It is 5~10 μm, width
WPIt is 0.5~5 μm, H2=HP2；
B3) in the N-shaped GaN material top of step B2) extension and two the second area tops, third time extension a layer thickness H3For 5~
10 μm, doping concentration be 5 × 1015~5 × 1017cm-3N-shaped GaN material, and make mask in this layer of N-shaped GaN material, benefit
With two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, to form average doping concentration as 5 × 1015~5
×1017cm-3Two p-type dopings third area, HP3It is 5~10 μm, width WPIt is 0.5~5 μm, H3=HP3；
B4) and so on, the m in two areas m-1 that the N-shaped GaN material top of a preceding extension and previous step are formed
Secondary extension a layer thickness HmIt is 5 × 10 for 5~10 μm, doping concentration15~5 × 1017cm-3N-shaped GaN material, and in this layer of n
Mask is made in type GaN material, using two side position implanted with p-type impurity of the mask in this layer of N-shaped GaN material, to be formed
Average doping concentration is 5 × 1015~5 × 1017cm-3, thickness HPmFor 5~10 μm, width WPIt is mixed for 0.5~5 μm of two p-types
The miscellaneous area m, and Hm=HPm, m is for the integer greater than zero and according to the determination of actual fabrication technique；
So far, the left P column (2) in left side, right side is collectively formed in firstth area in left side in step B, the secondth area, third area to the area m
The firstth area, the secondth area, third area to the area m the right P column (2) on right side is collectively formed, the width of each P column (2) is WP, as
0.5~5 μm, thickness H meets: H=HP1+HP2+…+HPm, value is 5~40 μm；
The part for not carrying out p-type doping in step B in the GaN material of all extensions forms whole N column (3), the N column (3)
Thickness is identical as the thickness H of P column (2), width WN=2WP；
C. it in the upper epitaxial N-shaped GaN semiconductor material of N column (3) and two P columns (2), forms thickness L and is 3~25 μm, adulterates
Concentration is 1 × 1015~1 × 1017cm-3Drift layer (4)；
D. in the upper epitaxial N-shaped GaN semiconductor material of drift layer (4), formed with a thickness of 0.5~2 μm, doping concentration be 1 ×
1016~1 × 1018cm-3Aperture layer (5)；
E. mask is made on aperture layer (5), using two side position implanted with p-type impurity of the mask in aperture layer, with production
Thickness is identical as aperture layer thickness, width a is 0.5~8 μm, the doping concentration of n-type impurity is 1 × 1018~5 × 1018cm-3's
Current barrier layer (6) forms aperture (7) between two symmetrical current barrier layers (6)；
F. in two current barrier layers (6) and aperture (7) upper epitaxial GaN semiconductor material between them, formed with a thickness of
0.04~0.2 μm of channel layer (8)；
G. in channel layer (8) upper epitaxial GaN base semiconductor material with wide forbidden band, the barrier layer (9) with a thickness of 5~50nm is formed；
H. mask is made on the top of barrier layer (9), using two side position implant n-type impurity of the mask in barrier layer, with
Making doping concentration is 1 × 1019~1 × 1021cm-3Injection region (10), wherein the depth of two injection regions is all larger than potential barrier
Thickness degree, and less than the overall thickness of both channel layer and barrier layer；
I. mask is made on the top of barrier layer (9) and injection region (10), deposits gold on two injection regions top using the mask
Belong to, to make source electrode (11)；
J. mask is made on barrier layer (9) top and source electrode (11) top, utilizes potential barrier of the mask between two source electrodes
Metal is deposited on layer (9), to make grid (12), there is horizontal direction between grid (12) and two current barrier layers (6)
On it is overlapping, overlapping length is greater than 0 μm；
K. metal is deposited on the back side of substrate (1), to make Schottky drain (13), completes the production of entire device.
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| WO2020181548A1 (en) | 2019-03-14 | 2020-09-17 | 中国科学院微电子研究所 | Gan-based super-junction vertical power transistor and manufacturing method therefor |
| CN109888012B (en) * | 2019-03-14 | 2022-08-30 | 中国科学院微电子研究所 | GaN-based super-junction vertical power transistor and manufacturing method thereof |
| CN113380877A (en) * | 2021-06-10 | 2021-09-10 | 四川美阔电子科技有限公司 | Power device of double-junction field plate |
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