CN205609502U - Copper aluminium composite substrate with fin structure - Google Patents
Copper aluminium composite substrate with fin structure Download PDFInfo
- Publication number
- CN205609502U CN205609502U CN201521124401.4U CN201521124401U CN205609502U CN 205609502 U CN205609502 U CN 205609502U CN 201521124401 U CN201521124401 U CN 201521124401U CN 205609502 U CN205609502 U CN 205609502U
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- copper
- aluminum compound
- fin structure
- compound substrate
- aluminium base
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Abstract
The utility model discloses a copper aluminium composite substrate with fin structure, including copper aluminium composite substrate and the even a plurality of fins of distribution on copper aluminium composite substrate, copper aluminium composite substrate includes aluminium base board and copper base plate, and a plurality of fins adopt cold forging or warm forging technology to form on aluminium base board integratively, and aluminium base board and copper base plate pass through metallurgical bonding forming technology formation copper aluminium composite substrate, and the metallurgical bonding forming technology temperature is 500 to 1000 DEG C, pressure and is 500 to 1000MPa. The utility model discloses copper aluminium composite substrate with fin structure can be directly as the encapsulation bottom plate of the power electronic device that calorific capacitys such as IGBTIGBTMosfet are big, and traditional plane copper base plate in the substituted device encapsulation, the liquid cooling fin structure that directly integrate, reduce cost, its heat dispersion improves 30~40% than pure aluminium base board, and then guarantees the combined strength bination of copper base plate and aluminium base board, be convenient for later stage detection and improvement.
Description
Technical field
This utility model relates to a kind of heat dissipation technology and device, particularly relates to a kind of Copper-Aluminum compound substrate with fin structure.
Background technology
The temperature of power electronic equipment components and parts is the key factor affecting power electronic equipment Performance And Reliability, in terms of IGBT/IGCT constant power module heat dissipating, it is typically to apply direct cooling technology in the design phase of module, directly cooling structure is to be integrated on the substrate of power model by radiating fin, this structure makes IGBT module be no longer necessary to come link block substrate and support baseboard by heat-conducting interface material when installing fixing, thus make the entire thermal resistance of module be substantially reduced, but the band fin substrate of this routine, often use fine copper or fine aluminium substrate, there is radiating efficiency low, cost is high, the deficiency of the aspects such as poor reliability.
Secondly, for raising heat dispersion, frequently with soldering, blast weldering, screw is fixed, copper and aluminum are combined by copper insert process, but the affinity between copper and aluminum is poor, in conjunction with relatively difficult, it may appear that interface thermal resistance, later stage defects detection and improvement more difficulty.
Summary of the invention
This utility model is for the deficiencies in the prior art, provide a kind of Copper-Aluminum compound substrate with fin structure, Novel copper-aluminium combination technology should be used with the Copper-Aluminum compound substrate of fin structure, it is ensured that copper aluminium material material combined strength bination, improve heat dispersion, reduce product weight and cost.
In order to solve above-mentioned technical problem, this utility model is addressed by following technical proposals:
A kind of Copper-Aluminum compound substrate with fin structure, including Copper-Aluminum compound substrate and be evenly distributed in the some fins on described Copper-Aluminum compound substrate, described Copper-Aluminum compound substrate includes aluminium base and copper base, some described fins use cold forging or warm forging technique to be formed on described aluminium base, described aluminium base and described copper base form Copper-Aluminum compound substrate by metallurgical binding moulding process, and metallurgical binding moulding process temperature be 500 to 1000 DEG C, pressure be 500 to 1000MPa.
In technique scheme, described aluminium base and described copper base by metallurgical binding moulding process formed the temperature of Copper-Aluminum compound substrate be 750 DEG C, pressure be 800MPa.
In technique scheme, the thickness of described aluminium base is 1mm to 9mm, and described aluminium base edge has some through holes.
In technique scheme, some described through holes are opened in described aluminium base edge equably, and some described through holes are symmetrical about the centrage of described aluminium base.
In technique scheme, the outer surface of described copper base is flat construction, and the thickness of described copper base is 0.3mm to 5mm.
In technique scheme, some described fin materials are aluminum, and the height of some described fins is 3mm to 15mm.
In technique scheme, some described fins be shaped as in triangle, rhombus, circle, ellipse, square, rectangle any one or mix multiple.
In technique scheme, some described fins use cold forging or warm forging technique to be formed on described aluminium base, and the technological temperature of cold forging or warm forging is-10 DEG C～500 DEG C.
Beneficial effect: compared with prior art, it has the advantages that this utility model
This utility model can be directly as the package floor of the big power electronic devices of the caloric values such as IGBT/IGBT/Mosfet with the Copper-Aluminum compound substrate of fin structure, plane copper substrate traditional in device encapsulation can be replaced simultaneously, it is directly integrated the cold fin structure of liquid, reduce the cold design work of liquid of client and overall purchase cost, its heat dispersion improves 30～40% than fine aluminium substrate, secondly, ensure the combined strength bination of copper base and aluminium base, it is easy to late detection and improves combined strength bination, it is simple to late detection and improvement.
Accompanying drawing explanation
Fig. 1 is the Copper-Aluminum compound board structure schematic diagram with fin structure；
Fig. 2 is the Copper-Aluminum compound substrate rearview with fin structure.
Detailed description of the invention
Refering to Fig. 1～2, a kind of Copper-Aluminum compound substrate with fin structure, including Copper-Aluminum compound substrate 1 and some fins 2 of being evenly distributed on Copper-Aluminum compound substrate 1, Copper-Aluminum compound substrate 1 includes aluminium base 3 and copper base 4, some fins 2 use cold forging or warm forging technique to be formed on aluminium base 3, aluminium base 3 and copper base 4 form Copper-Aluminum compound substrate 1 by metallurgical binding moulding process, and metallurgical binding moulding process temperature be 500 to 1000 DEG C, pressure be 500 to 1000MPa.In order to ensure copper base 4 and aluminium base 3 combined strength bination, it is easy to late detection and improvement, Copper-Aluminum compound substrate 1 is in the case of ensureing heat dispersion, reduce product weight and cost, its heat dispersion improves 30～40% than fine aluminium substrate, and its overall cost is lower by about 35% than fine copper, and some fins 2 use cold forging or warm forging technique to be formed on aluminium base 3, some fins 2 reduce product weight with aluminium base 3, reduce the cost of total body fluid cooling system.
In the present embodiment, aluminium base 3 and copper base 4 by metallurgical binding moulding process formed the temperature of Copper-Aluminum compound substrate 1 be 750 DEG C, pressure be 800MPa, improve the combined strength bination of copper base 4 and aluminium base 3, there is good processing performance at the interface of Copper-Aluminum compound substrate 1 after forming metallurgical binding, this be interface be that the cold composite that mechanical bond or Van der Waals force combine can not be compared, aluminium base 3 and copper base 4 can reach the highest bond strength, make Copper-Aluminum compound substrate 1 have excellent processing performance.
The thickness of aluminium base 3 can set according to the heating module of power electronic devices and mounting structure, specifically, the thermal coefficient of expansion of aluminum is bigger than copper, specifically, aluminium base 3 thickness is between 1mm to 9mm, it is possible to quickly distribute bigger thermal stress, so that chip performance improves, aluminium base 3 edge has some through holes 31, some through holes 31 to be to provide for being connected with parts, it is simple to install.
Some through holes 31 are opened in aluminium base 3 edge equably.Specifically, some through holes 31 are symmetrical about the centrage of aluminium base 3, it is simple to install, and improve work efficiency.
The thickness of copper base 4 can set according to the heating module of power electronic devices and mounting structure, the thermal coefficient of expansion of copper is less than aluminum, and specifically, copper base 4 thickness is 0.3mm to 5mm, under compared with big thermal stress, deformation quantity is little, so that chip stable operation in the position that change relatively is little.
The outer surface of copper base 4 is flat construction, and copper base 4 directly welds together with chip internal, reduces the risk that thermal stress is excessive, it is provided that efficient copper material is to thermal source heat conduction.
Specifically, the gross thickness of Copper-Aluminum compound substrate 1 is 2mm to 10mm.
Some fins 2 be shaped as triangle, rhombus, circle, ellipse, square, rectangle, abnormity cylinder, plates any one or mix multiple, in the present embodiment, some fin 2 materials are aluminum, the cylinder being shaped as diameter 0.3mm to 5mm, highly 3mm to 15mm of some fins 2, fin 2 can reduce product weight, reduces the cost of total body fluid cooling system.
The shape of some fins 2 according to real work demand, can be changed to improve radiating efficiency.
Some fins 2 use cold forging or warm forging technique to be formed on described aluminium base 3, and the technological temperature of cold forging or warm forging is-10 DEG C～500 DEG C.
Spacing between some fins 2 can design adjustment according to cooling requirements, owing to the thermal coefficient of expansion of aluminum is bigger, can produce bigger thermal stress, and the spacing of the 0.3mm-3.5mm that Design Theory goes out can ensure that some fins 2 are the most mutually conflicted.
In sum, this utility model can be directly as the package floor of the big power electronic devices of the caloric values such as IGBT/IGBT/Mosfet with the Copper-Aluminum compound substrate of fin structure, plane copper substrate traditional in device encapsulation can be replaced simultaneously, it is directly integrated the cold fin structure of liquid, reducing the cold design work of liquid of client and overall purchase cost, its heat dispersion improves 30～40% than fine aluminium substrate, secondly, ensure the combined strength bination of copper base and aluminium base, it is simple to late detection and improvement.
Embodiment described above is only to be described preferred implementation of the present utility model, is not defined spirit and scope of the present utility model.On the premise of without departing from this utility model design concept; various modification that the technical solution of the utility model is made by this area ordinary person and improvement; protection domain of the present utility model all should be dropped into, the technology contents that this utility model is claimed, all record in detail in the claims.
Claims (8)
1. the Copper-Aluminum compound substrate with fin structure, it is characterized in that, including Copper-Aluminum compound substrate (1) and be evenly distributed in the some fins (2) on described Copper-Aluminum compound substrate (1), described Copper-Aluminum compound substrate (1) includes aluminium base (3) and copper base (4), some described fins (2) use cold forging or warm forging technique to be formed on described aluminium base (3), described aluminium base (3) and described copper base (4) form Copper-Aluminum compound substrate (1) by metallurgical binding moulding process, and metallurgical binding moulding process temperature is 500 to 1000 DEG C, pressure is 500 to 1000MPa.
Copper-Aluminum compound substrate with fin structure the most according to claim 1, it is characterised in that described aluminium base (3) and described copper base (4) by metallurgical binding moulding process formed the temperature of Copper-Aluminum compound substrate (1) be 750 DEG C, pressure be 800MPa.
Copper-Aluminum compound substrate with fin structure the most according to claim 2, it is characterised in that the thickness of described aluminium base (3) is 1mm to 9mm, described aluminium base (3) edge has some through holes (31).
Copper-Aluminum compound substrate with fin structure the most according to claim 3, it is characterized in that, some described through holes (31) are opened in described aluminium base (3) edge equably, and some described through holes (31) are symmetrical about the centrage of described aluminium base (3).
Copper-Aluminum compound substrate with fin structure the most according to claim 1, it is characterised in that the outer surface of described copper base (4) is flat construction, the thickness of described copper base (4) is 0.3mm to 5mm.
Copper-Aluminum compound substrate with fin structure the most according to claim 1, it is characterised in that some described fin (2) materials are aluminum, and the height of some described fins (2) is 3mm to 15mm.
Copper-Aluminum compound substrate with fin structure the most according to claim 6, it is characterised in that some described fins (2) be shaped as in triangle, rhombus, circle, ellipse, square, rectangle any one or mix multiple.
Copper-Aluminum compound substrate with fin structure the most according to claim 1, it is characterised in that some described fins (2) use cold forging or warm forging technique to be formed on described aluminium base (3), and the technological temperature of cold forging or warm forging is-10 DEG C～500 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521124401.4U CN205609502U (en) | 2015-12-31 | 2015-12-31 | Copper aluminium composite substrate with fin structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521124401.4U CN205609502U (en) | 2015-12-31 | 2015-12-31 | Copper aluminium composite substrate with fin structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205609502U true CN205609502U (en) | 2016-09-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521124401.4U Expired - Fee Related CN205609502U (en) | 2015-12-31 | 2015-12-31 | Copper aluminium composite substrate with fin structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205609502U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514061A (en) * | 2015-12-31 | 2016-04-20 | 昆山固特杰散热产品有限公司 | Copper-aluminum composite substrate with fin structure |
| CN113465429A (en) * | 2021-06-07 | 2021-10-01 | 华南理工大学 | Ultra-light high-performance copper-aluminum composite soaking plate and preparation method thereof |
-
2015
- 2015-12-31 CN CN201521124401.4U patent/CN205609502U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514061A (en) * | 2015-12-31 | 2016-04-20 | 昆山固特杰散热产品有限公司 | Copper-aluminum composite substrate with fin structure |
| CN113465429A (en) * | 2021-06-07 | 2021-10-01 | 华南理工大学 | Ultra-light high-performance copper-aluminum composite soaking plate and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160928 Termination date: 20171231 |