CN205501447U - Heat exchange sapphire crystal growth furnace - Google Patents
Heat exchange sapphire crystal growth furnace Download PDFInfo
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- CN205501447U CN205501447U CN201620243564.2U CN201620243564U CN205501447U CN 205501447 U CN205501447 U CN 205501447U CN 201620243564 U CN201620243564 U CN 201620243564U CN 205501447 U CN205501447 U CN 205501447U
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- heat
- heat exchange
- sapphire crystal
- crucible
- heater
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Abstract
The utility model discloses a heat exchange sapphire crystal growth furnace, including the stove outer covering, install the heat preservation in the stove outer covering, heat preservation internally mounted has the crucible, heat exchanger is installed to the crucible bottom, the heat preservation with be provided with the heat -generating body between the crucible, the heat -generating body is provided with a plurality ofly, and is a plurality of the heat -generating body vertically sets gradually, every the heat -generating body is connected with same power control unit through a transformer. The utility model discloses a set up a plurality of heat -generating bodies, a plurality of heat -generating bodies vertically set gradually to every heat -generating body all is connected with a transformer, and every the transformer all passes through power control unit control power to form the lower low temperature gradient who climbs to a high place from bottom to top, and temperature steady avoids frequently changing the high condition of manufacturing cost that equipment thermal field part brought, improve product yield and product stability.
Description
Technical field
This utility model relates to crystal production technical field, particularly relates to a kind of heat exchange sapphire crystal growth
Stove.
Background technology
Heat exchange sapphire crystal growth technique belongs to the one of directional solidification technique, uses heat exchanger to derive
Heat forms certain thermograde, thus drives crystal growth.For heat exchange process, grow different
Crystalline material, is affected bigger by gradient and the stability of temperature field.The growth of sapphire crystal, for thermal field
The requirement of layout is the harshest, thus equipment precision used is high, expensive.The shape of the warm field of its growth
Become main by the heat exchange mode of heat exchanger, the layout of thermal insulation layer, the layout of heater, the convection current etc. of air-flow
Factor determines, it is common that the coefficient result of several parts.
In actual production process, owing to there is individual variation, same thermal field component between different tables
It is not necessarily applied to all of equipment.And change one of them or whole parts of thermal field component frequently,
What meeting was serious affects production efficiency, increases the production cost of enterprise, thus is making more heat exchange in some cases
Field parts become the most unrealistic.In order to make up different table for the requirement of thermal field component, software can only be passed through
The change of aspect makes hardware components adapt to the individual variation of table.And heater is heat exchange sapphire crystalline substance
A part the most key in bulk-growth stove, the heating system of heater is for directly affecting the temperature in furnace chamber
Degree gradient, thus affect crystal growth, for improving the yield of product, improve the stability of product quality extremely
Close important.
Use heat exchange process to carry out in sapphire crystal growing process, need a temperature from bottom to top
Degree gradient, bottom temp is low, and upper temp is high.If using single heater to control thermograde, imitate
Fruit is the most inconspicuous, once changes due to atmosphere during crystal growth, and resistivity will change
Becoming, the thermograde of whole temperature field will be readjusted, and this adjusts process and needs more than 10 hours, but
In this process, the growth rate of crystal can occur significantly to change, thus cause and split ingot, bubble ingot,
The situations such as polycrystalline ingot.
Utility model content
This utility model mainly solves the technical problem in the presence of prior art, thus provides the one can
Form thermograde, and the heat exchange sapphire crystal growing furnace of temperature stabilization.
Above-mentioned technical problem of the present utility model is mainly addressed by following technical proposals:
A kind of heat exchange sapphire crystal growing furnace that this utility model provides, including furnace shell, in described furnace shell
Being provided with heat-insulation layer, described heat-insulation layer is internally installed crucible, and described crucible bottom is provided with heat exchanger,
Being provided with heater between described heat-insulation layer and described crucible, described heater is provided with multiple, multiple described
Heater longitudinally sets gradually, and each described heater is by a transformator and same output control device
Connect.
Further, described heater includes annular heat-generating units, and the described heat-generating units of annular connects to be had
Electrode, described electrode is connected with transformator after described heat-insulation layer and furnace shell.
Further, the described heat-generating units of multiple annulars collectively constitutes the heater of barrel shape.
Further, the material of described heat-generating units is graphite, and described heat-generating units and described electrode thread
Connect.
Further, the material of described heat generating body unit is tungsten, and described heat-generating units and described electrode welding.
The beneficial effects of the utility model are: by arranging multiple heater, and multiple heaters are the most successively
Arrange, and each heater is all connected with a transformator, and each described transformator all passes through power
Control device and control power, thus form lower low high thermograde from bottom to top, and temperature stabilization,
Avoid the situation that production cost that frequently more exchange device thermal field component brings is high, improve product yield and
Product stability.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below by right
In embodiment or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that below,
Accompanying drawing in description is only embodiments more of the present utility model, for those of ordinary skill in the art,
On the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of heat exchange sapphire crystal growing furnace of the present utility model.
Detailed description of the invention
Below in conjunction with the accompanying drawings preferred embodiment of the present utility model is described in detail, so that this utility model
Advantage and feature can be easier to be readily appreciated by one skilled in the art, thus to protection domain of the present utility model
Make apparent clear and definite defining.
Refering to shown in Fig. 1, a kind of heat exchange sapphire crystal growing furnace of the present utility model, including furnace shell 1,
Being provided with heat-insulation layer 2 in furnace shell 1, heat-insulation layer 2 is internally installed crucible 3, is provided with heat friendship bottom crucible 3
Parallel operation 7, is provided with heater 4 between heat-insulation layer 2 and crucible 3, heater 4 is provided with multiple, Duo Gefa
Hot body 4 longitudinally sets gradually, and each heater 4 is by a transformator 5 and same output control device 6
Connect.By arranging multiple heater 4, multiple heaters 4 longitudinally set gradually, and each heater 4
All it is connected with a transformator 5, and each described transformator 5 all controls merit by output control device 6
Rate, thus form lower low high thermograde from bottom to top, and temperature stabilization, it is to avoid frequently change
The situation that the production cost that equipment thermal field component brings is high, improves product yield and product stability.
In the present embodiment, heater 4 includes annular heat-generating units 41, and the heat-generating units 41 of annular connects
Electrode 42, electrode 42 is had to be connected with transformator 5 after heat-insulation layer 2 and furnace shell 1.Transformator 5 electric energy leads to
Cross electrode 42 to be delivered on the heater 4 of inside, crucible 3 is heated, its simple in construction, this electrode
42 can be red copper binding post, it is also possible to be other materials.Preferably, the heat-generating units 41 of multiple annulars is altogether
With the heater 4 forming barrel shape.Barrel-shaped heater 4 heating area is big, and caloric value is uniform.
Concrete, when the material of heat-generating units 41 is graphite, heat-generating units 41 is threadeded with electrode 42,
Convenient disassembly.When the material of heat generating body unit 41 is tungsten, and heat-generating units 41 welds with electrode 42, connection side
Formula is simple.
Above, detailed description of the invention the most of the present utility model, but protection domain of the present utility model not office
It is limited to this, any change expected without creative work or replacement, all should contain of the present utility model
Within protection domain.Therefore, the protection that protection domain of the present utility model should be limited with claims
Scope is as the criterion.
Claims (5)
1. a heat exchange sapphire crystal growing furnace, including furnace shell (1), it is characterised in that: described furnace shell
(1) being provided with heat-insulation layer (2) in, described heat-insulation layer (2) is internally installed crucible (3), described crucible
(3) bottom is provided with heat exchanger (7), is provided with between described heat-insulation layer (2) and described crucible (3)
Heater (4), described heater (4) is provided with multiple, and multiple described heaters (4) longitudinally set successively
Putting, each described heater (4) is by a transformator (5) with same output control device (6) even
Connect.
2. heat exchange sapphire crystal growing furnace as claimed in claim 1, it is characterised in that: described heating
Body (4) includes annular heat-generating units (41), and the upper connection of the described heat-generating units (41) of annular has electrode (42),
Described electrode (42) is connected with transformator (5) afterwards through described heat-insulation layer (2) and furnace shell (1).
3. heat exchange sapphire crystal growing furnace as claimed in claim 2, it is characterised in that: multiple annulars
Described heat-generating units (41) collectively constitute the heater (4) of barrel shape.
4. heat exchange sapphire crystal growing furnace as claimed in claim 3, it is characterised in that: described heating
The material of unit (41) is graphite, and described heat-generating units (41) is threadeded with described electrode (42).
5. heat exchange sapphire crystal growing furnace as claimed in claim 3, it is characterised in that: described heating
The material of body unit (41) is tungsten, and described heat-generating units (41) welds with described electrode (42).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620243564.2U CN205501447U (en) | 2016-03-28 | 2016-03-28 | Heat exchange sapphire crystal growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620243564.2U CN205501447U (en) | 2016-03-28 | 2016-03-28 | Heat exchange sapphire crystal growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205501447U true CN205501447U (en) | 2016-08-24 |
Family
ID=56732750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620243564.2U Active CN205501447U (en) | 2016-03-28 | 2016-03-28 | Heat exchange sapphire crystal growth furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN205501447U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023534A (en) * | 2018-09-25 | 2018-12-18 | 天通银厦新材料有限公司 | A kind of detachable heating device of sapphire crystal growing furnace |
-
2016
- 2016-03-28 CN CN201620243564.2U patent/CN205501447U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023534A (en) * | 2018-09-25 | 2018-12-18 | 天通银厦新材料有限公司 | A kind of detachable heating device of sapphire crystal growing furnace |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |