CN205232017U - Igbt drive circuit - Google Patents

Igbt drive circuit Download PDF

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Publication number
CN205232017U
CN205232017U CN201521031357.2U CN201521031357U CN205232017U CN 205232017 U CN205232017 U CN 205232017U CN 201521031357 U CN201521031357 U CN 201521031357U CN 205232017 U CN205232017 U CN 205232017U
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China
Prior art keywords
circuit
resistor
switch
igbt
output end
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CN201521031357.2U
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Chinese (zh)
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邱光
王巍
蒋明
贺维
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SHENZHEN RILAND INDUSTRY Co Ltd
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SHENZHEN RILAND INDUSTRY Co Ltd
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Abstract

The utility model discloses a IGBT drive circuit, this IGBT drive circuit include that drive signal produces circuit, boost circuit, tank, discharge circuit and negative pressure generating circuit, and wherein, drive signal produces the circuit and is used for producing the IGBT drive signal of positive and negative transition, boost circuit is used for the back output of stepping up with the IGBT drive signal of positive and negative transition, tank is used for carrying on the energy storage when boost circuit output forward voltage to the drive IGBT switch on, discharge through the discharge circuit when boost circuit output negative sense voltage to turn -off IGBT, negative pressure generating circuit is used for carrying on the energy storage when boost circuit output forward voltage to generate the negative voltage, and when boost circuit output reverse voltage, offer the discharge circuit with the negative voltage. The utility model discloses IGBT's shutoff speed can be improved, IGBT's switching loss is reduced.

Description

IGBT drive circuit
Technical Field
The utility model relates to a IGBT technical field especially relates to an IGBT drive circuit.
Background
With the increasing market demand for high-power converters, medium-high voltage high-power IGBTs (insulated gate bipolar transistors) are widely used, such as widely applied to frequency converters, arc welding power supplies, and the like. The IGBT driving circuit is an important circuit for controlling the operation of the IGBT, has very important influence on the normal operation of the IGBT, can shorten the switching time and reduce the switching loss by adopting a set of driving circuit with good performance, so that the IGBT works in an ideal switching state and has important significance on the operation efficiency, reliability and safety of products. When the IGBT is turned off, the existing IGBT driving circuit is mainly realized by directly discharging a discharging resistor through a capacitor, and when the discharging voltage of the capacitor is lower than the gate voltage of the IGBT, the IGBT is turned off. However, since the discharging speed of the discharging resistor is slow, the IGBT is turned off slowly, and the IGBT switching loss increases.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a main aim at providing a IGBT drive circuit aims at improving IGBT's turn-off speed, reduces IGBT's switching loss.
In order to achieve the above object, the present invention provides an IGBT driving circuit, which includes a driving signal generating circuit, a boosting circuit, an energy storage circuit, a discharging circuit and a negative pressure generating circuit, wherein an output end of the driving signal generating circuit is connected to an input end of the boosting circuit, and an output end of the boosting circuit is connected to an input end of the energy storage circuit; the output end of the energy storage circuit is connected with the driven end of the IGBT; the input end of the negative voltage generating circuit is connected with the output end of the booster circuit, and the output end of the negative voltage discharging circuit is connected with the discharging end of the energy storage circuit through the discharging circuit; wherein,
the driving signal generating circuit is used for generating positive and negative alternative IGBT driving signals;
the booster circuit is used for boosting the IGBT driving signals with the positive polarity and the negative polarity alternately and then outputting the boosted IGBT driving signals;
the energy storage circuit is used for storing energy when the booster circuit outputs forward voltage so as to drive the IGBT to be conducted; discharging through the discharging circuit when the boosting circuit outputs a negative voltage to turn off the IGBT;
the negative voltage generating circuit is used for storing energy when the booster circuit outputs a forward voltage, generating a negative voltage and providing the negative voltage for the discharge circuit when the booster circuit outputs a reverse voltage.
Preferably, the driving signal generating circuit comprises a controller, a logic converting circuit, a switch driving circuit and a driving power supply, the controller comprises a first signal output end and a second signal output end, the logic conversion circuit comprises a first input end, a second input end, a first output end and a second output end, the first input end of the logic conversion circuit is connected with the first signal output end of the controller, a second input terminal of the logic conversion circuit is connected with a second signal output terminal of the controller, the first output end and the second output end of the logic conversion circuit are correspondingly connected with the first controlled end and the second controlled end of the switch driving circuit, the input end of the switch driving circuit is connected with the driving power supply, and the output end of the switch driving circuit is the output end of the driving signal generating circuit; wherein,
the controller is used for outputting a first preset driving signal and a second preset driving signal;
the logic conversion circuit is used for converting the first preset driving signal and the second preset driving signal into two paths of switching control signals with equal amplitude, equal frequency, equal duty ratio and 180-degree phase difference;
And the switch driving circuit is used for controlling the driving power supply to output the positive and negative alternative IGBT driving signals according to the two paths of switch control signals with equal amplitude, equal frequency, equal duty ratio and 180-degree phase difference.
Preferably, the logic conversion circuit includes a first power supply, a second power supply, a first trigger, a first inverter, a second inverter, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a seventh resistor, an eighth resistor, and a first switch driving chip, where the first switch driving chip includes a power pin, a first input pin, a second input pin, a first output pin, a second output pin, and a ground pin; a first signal output end of the controller is connected with the first power supply through the first resistor, and a second signal output end of the controller is connected with the second power supply through the third resistor; one input end of the first trigger is connected with a first signal output end of the controller through the second resistor, the other input end of the first trigger is connected with a second signal output end of the controller through the fourth resistor, the output end of the first trigger is connected with one end of the fifth resistor through the second phase inverter, and the other end of the fifth resistor is respectively connected with a first input pin and a second input pin of the first switch driving chip; the power pin of the first switch driving chip is connected with the driving power supply through the seventh resistor and the eighth resistor, the grounding pin of the first switch driving chip is grounded, the first output pin of the first switch driving chip is the first output end of the logic conversion circuit, and the second output pin of the first switch driving chip is the second output end of the logic conversion circuit.
Preferably, the switch driving circuit includes a first switch tube, a second switch tube, a third switch tube, a fourth switch tube, a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a first diode, a second diode, a third diode, and a fourth diode; the grid electrode of the first switch tube is connected with the first output pin of the first switch driving chip through the eleventh resistor and the ninth resistor in sequence, the cathode of the first diode is connected with the grid electrode of the first switch tube, and the anode of the first diode is connected with one end of the ninth resistor and the eleventh resistor which are connected with each other; the source electrode of the first switch tube is connected with the driving power supply through the eighth resistor, and the drain electrode of the first switch tube is connected with the drain electrode of the second switch tube; a grid electrode of the second switch tube is connected with a first output end of the first switch driving chip through the twelfth resistor and the ninth resistor in sequence, an anode of the second diode is connected with the grid electrode of the second switch tube, and a cathode of the second diode is connected with one end of the eleventh resistor and one end of the tenth resistor which are connected with each other; the grid electrode of the third switching tube is connected with the second output pin of the first switch driving chip through the thirteenth resistor and the tenth resistor in sequence, the cathode of the third diode is connected with the grid electrode of the third switching tube, and the anode of the third diode is connected with one end of the tenth resistor and the thirteenth resistor which are connected with each other; the source electrode of the third switching tube is connected with the driving power supply through the eighth resistor, and the drain electrode of the third switching tube is connected with the drain electrode of the fourth switching tube; the grid electrode of the fourth switch tube is connected with the second output end of the first switch driving chip through the fourteenth resistor and the tenth resistor, the anode of the fourth diode is connected with the grid electrode of the fourth switch tube, and the cathode of the fourth diode is connected with one end of the fourteenth resistor and one end of the tenth resistor, which are interconnected.
Preferably, the boost circuit includes a transformer, the transformer has a first primary input end, a second primary input end, a first secondary output end and a second secondary output end, the first primary input end of the transformer is connected to a common end of the third switching tube and the fourth switching tube, the second primary input end of the transformer is connected to a common end of the first switching tube and the second switching tube, and the first secondary output end and the second secondary output end of the transformer jointly constitute the output end of the boost circuit.
Preferably, the energy storage circuit includes a fifth diode and a seventh capacitor, an anode of the fifth diode is connected to the first secondary output terminal of the transformer, a cathode of the fifth diode is interconnected to one end of the seventh capacitor and the driven terminal of the IGBT, and the other end of the seventh capacitor is interconnected to the second secondary output terminal of the transformer and the drain of the IGBT.
Preferably, the discharge circuit includes a fifth switching tube and a fifteenth resistor, a gate of the fifth switching tube is connected to the first secondary output terminal of the transformer, a source of the fifth switching tube is connected to one end of the fifth diode and the seventh capacitor, and a drain of the fifth switching tube is connected to the second secondary output terminal of the transformer through the fifteenth resistor.
Preferably, the negative voltage generating circuit includes a sixth diode, a first voltage regulator tube, an eighth capacitor and a ninth capacitor; the anode of the sixth diode is connected with the first secondary output end of the transformer, the cathode of the sixth diode is connected with the anode of an eighth capacitor, and the cathode of the eighth capacitor is connected with the second secondary output end of the transformer; the ninth capacitor is connected with the first voltage-regulator tube in parallel, one end of the ninth capacitor, which is connected with the anode of the first voltage-regulator tube, is connected with the second secondary output end of the transformer, and one end of the ninth capacitor, which is connected with the cathode of the first voltage-regulator tube, is connected with the other end of the seventh capacitor.
Preferably, the IGBT driving circuit further includes a clamp circuit, and the clamp circuit is connected to an output end of the tank circuit.
Preferably, the IGBT driving circuit further includes a clamping circuit, the clamping circuit includes a second voltage regulator tube and a third voltage regulator tube, a cathode of the second voltage regulator tube is connected to one end of the fifth diode and the seventh capacitor, an anode of the second voltage regulator tube is connected to an anode of the third voltage regulator tube, and a cathode of the third voltage regulator tube is connected to a cathode of the sixth diode.
The utility model discloses a set up drive signal production circuit, boost circuit, tank circuit, discharge circuit and negative pressure generation circuit and constitute IGBT drive circuit, this IGBT drive circuit because the IGBT drive signal who generates drive signal production circuit through boost circuit carries out the boost after exporting to tank circuit and carries out the charging energy storage, the charge time is short to make IGBT conduction speed faster; and the output power supply after the boost circuit boosts the voltage is also output to the negative voltage generating circuit to be charged and stored, and a negative voltage is generated, when the energy storage circuit discharges through the discharging circuit, the negative voltage is provided for the discharging circuit, so that the energy storage voltage and the negative voltage interact with each other, the voltage release speed of the energy storage circuit is accelerated, the turn-off speed of the IGBT is improved, and the switching loss of the IGBT is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a circuit block diagram of a preferred embodiment of the IGBT driving circuit of the present invention;
fig. 2 is a schematic circuit structure diagram of the IGBT driving circuit shown in fig. 1.
The reference numbers illustrate:
the objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit ly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The utility model provides a IGBT drive circuit for the quick drive IGBT switches on and shuts off.
Referring to fig. 1 and 2, in the embodiment of the present invention, the IGBT driving circuit includes a driving signal generating circuit 10, a boosting circuit 20, an energy storage circuit 30, a discharging circuit 40, and a negative voltage generating circuit 50.
Specifically, the output end of the driving signal generating circuit 10 is connected to the input end of the voltage boosting circuit 20, and the output end of the voltage boosting circuit 20 is connected to the input end of the energy storage circuit 30; the output end of the energy storage circuit 30 is connected with the driven end of the IGBT; the input end of the negative voltage generating circuit 50 is connected to the output end of the boosting circuit 20, and the output end of the negative voltage generating circuit 50 is connected to the discharging end of the energy storage circuit 30 through the discharging circuit 40.
In this embodiment, the driving signal generating circuit 10 is configured to generate positive and negative alternative IGBT driving signals; the booster circuit 20 is used for boosting the positive and negative alternative IGBT driving signals and then outputting the boosted IGBT driving signals; the energy storage circuit 30 is used for storing energy when the boost circuit 20 outputs a forward voltage and driving the IGBT to be turned on, and since the boost circuit 20 increases the output voltage, the turn-on speed of the IGBT is increased. The energy storage circuit 30 is further configured to discharge through the discharging circuit 40 when the voltage boosting circuit 20 outputs a negative voltage, so as to turn off the IGBT; the negative voltage generation circuit 50 is configured to store energy when the booster circuit 20 outputs a forward voltage, generate a negative voltage, and supply the negative voltage to the discharge circuit 40 when the booster circuit 20 outputs a reverse voltage. Because one end of the two ends of the discharging circuit 40 is the discharging voltage of the energy storage circuit 30, and the other end is the negative voltage of the negative voltage generating circuit 50, the two ends interact with each other, so that the voltage releasing speed of the energy storage circuit 30 is accelerated, the turn-off speed of the IGBT is improved, and the switching loss of the IGBT is reduced.
The driving signal generating circuit 10 can be implemented by any circuit for outputting positive and negative alternative IGBT driving signals, and is not limited herein, in a preferred embodiment, the driving signal generating circuit 10 includes a controller MCU, a logic converting circuit 11, a switch driving circuit 12 and a driving power VCC5, the controller MCU includes a first signal output terminal PWM and a second signal output terminal SEL, the logic converting circuit 11 includes a first input terminal, a second input terminal, a first output terminal and a second output terminal, the first input terminal of the logic converting circuit 11 is connected to the first signal output terminal PWM of the controller MCU, the second input terminal of the logic converting circuit 11 is connected to the second signal output terminal SEL of the controller MCU, the first output terminal and the second output terminal of the logic converting circuit 11 are connected to the first controlled terminal and the second controlled terminal of the switch driving circuit 12 in a one-to one correspondence, the input end of the switch driving circuit 12 is connected to the driving power supply VCC5, and the output end of the switch driving circuit 12 is the output end of the driving signal generating circuit 10.
Specifically, the controller MCU is configured to output a first preset driving signal and a second preset driving signal; the logic conversion circuit 11 is configured to convert the first preset driving signal and the second preset driving signal into two switching control signals with equal amplitude, equal frequency, equal duty ratio, and 180-degree phase difference; the switch driving circuit 12 is configured to control the driving power VCC5 to output the positive and negative alternative IGBT driving signals according to the two switch control signals with equal amplitude, equal frequency, equal duty ratio, and 180-degree phase difference. It should be noted that, the phase difference between the two control signals is 180 degrees, so that the switch driving circuit 12 can control the driving power VCC5 to output two corresponding power states according to the two control signals.
In this preferred embodiment, the driving power VCC5 is a dc power supply, and the controller MCU may be a single chip or a PWM controller.
The logic conversion circuit 11 includes a first power source VCC1, a second power source VCC2, a first flip-flop U1, a first inverter I1, a second inverter I2, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a seventh resistor R7, an eighth resistor R8, and a first switch driving chip U3.
Wherein the first switch driving chip U3 comprises a power pin VS and a first input pinA second input pin LinB, a first output pin OutA, a second output pin OutB and a ground pin GND; a first signal output end PWM of the controller MCU is connected with the first power supply VCC1 through the first resistor R1, and a second signal output end SEL of the controller MCU is connected with the second power supply VCC2 through the third resistor R3; an input end of the first trigger U1 is connected with a first signal output end PWM of the controller MCU through the second resistor R2, another input end of the first trigger U1 is connected with a second signal output end SEL of the controller MCU through the fourth resistor R4, an output end of the first trigger U1 is connected with one end of the fifth resistor R5 through the second inverter I2, and the other end of the fifth resistor R5 is respectively connected with a first input pin of the first switch driving chip U3 The second input pin LinB is connected with the first input pin; the power supply pin VS of the first switch driving chip U3 passes through the seventh resistor R7, the eighth resistor R8 and theDrive power supply VCC5 connects, the ground pin GND ground of first switch driver chip U3, the first output pin OutA of first switch driver chip U3 does the first output of logic conversion circuit 11, the second output pin OutB of first switch driver chip U3 does the second output of logic conversion circuit 11.
It can be understood that, the controller MCU outputs two driving signals with different amplitudes, frequencies, duty ratios and phases through the first output end and the second output end, and after the driving signals are respectively logically processed by the corresponding inverters and the corresponding flip-flops, a switch control signal is synthesized, the switch control signal is amplified and converted by the first switch driving chip U3 to be converted into two switch control signals with equal amplitudes, equal frequencies, equal duty ratios and 180-degree phase difference, and the two switch control signals have one higher level and one lower level for controlling the switch driving circuit 12 to switch between two switch states, thereby controlling the driving power VCC5 to output two different voltage states, i.e. positive and negative alternate output.
In the logic conversion circuit 11, a first capacitor C1 is further provided between the second resistor R2 and the first inverter I1 and grounded, so as to filter a signal output through the second resistor R2. Similarly, a second capacitor C2 may be disposed between the fourth resistor R4 and the first flip-flop U1 to filter the signal output through the fourth resistor R4. In addition, a power supply terminal of the first inverter I1 is connected to a third filter capacitor C3.
It should be noted that, if the multi-way switch control is performed, a logic converting circuit 11 may be further arranged in parallel, which can be implemented by referring to the logic converting circuit 11, and details are not described here. Of course, a fourth power VCC4, a second flip-flop U2, a third inverter I3, a fourth inverter I4, a sixth resistor R6, a second switch driving chip U4, and a fourth filter capacitor C4 may also be added directly on the basis of the original logic conversion circuit 11; the second switch driving chip U4 and the first switch driving chip U3 use the same type of fet driving chip, for example, IR 4428. Wherein the first input terminal of the second flip-flop U2 passes through the third inverter I3 and the fourth inverterThe fourth resistor R4 is connected with a first signal output end PWM of the controller MCU, a second input end of the second trigger U2 is connected with an output end of the first inverter I1, a power supply end of the second trigger U2 is connected with a fourth power supply VCC4 and is connected to the ground through a fourth filter capacitor C4, and a ground end of the second trigger U2 is grounded; the output end of the second flip-flop U2 is connected to one end of a sixth resistor R6 through a fourth inverter I4, and the other end of the sixth resistor R6 is connected to the first input pin of the second switch driving chip U4 The second input pin LinB is connected with the first input pin; the power pin VS is connected to the driving power VCC5 through the seventh resistor R7 and the eighth resistor R8, and the connection mode of the other pins of the first switch driving chip U3 is set with reference to the first switch driving chip U3, as shown in fig. 2.
In addition, the first switch driving chip U3 and the second switch driving chip U4 are also provided with filter capacitors, for example, a fifth capacitor C5 and a sixth capacitor C6, specifically, the power pin VS of the first switch driving chip U3 and the power pin VS of the second switch driving chip U4 are further connected to the ground through the fifth capacitor C5, two ends of the fifth capacitor C5 are connected with the sixth capacitor C6 in parallel, the anode of the sixth capacitor C6 is connected with one end of the fifth capacitor C5 interconnected with the power pin VS of the first/second switch driving chip U3, and the cathode of the sixth capacitor C6 is grounded.
The switch driving circuit 12 includes a first switch Q1, a second switch Q2, a third switch Q3, a fourth switch Q4, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor RVCC5, a fourteenth resistor R14, a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4.
The gate of the first switch tube Q1 is connected to the first output pin OutA of the first switch driving chip U3 through the eleventh resistor R11 and the ninth resistor R9 in sequence, the cathode of the first diode D1 is connected to the gate of the first switch tube Q1, and the anode of the first diode D1 is connected to one end of the interconnection of the ninth resistor R9 and the eleventh resistor R11; the source of the first switch transistor Q1 is connected to the driving power source VCC5 through the eighth resistor R8, and the drain is connected to the drain of the second switch transistor Q2; a gate of the second switch tube Q2 is sequentially connected to the first output terminal of the first switch driving chip U3 through the twelfth resistor R12 and the ninth resistor R9, an anode of the second diode D2 is connected to a gate of the second switch tube Q2, and a cathode of the second diode D2 is connected to one end of the eleventh resistor R11 and the tenth resistor R10, which are interconnected; the gate of the third switching tube Q3 is connected to the second output pin OutB of the first switch driving chip U3 through the thirteenth resistor RVCC5 and the tenth resistor R10 in sequence, the cathode of the third diode D3 is connected to the gate of the third switching tube Q3, and the anode of the third diode D3 is connected to one end of the interconnection of the tenth resistor R10 and the thirteenth resistor RVCC 5; the source of the third switching tube Q3 is connected to the driving power source VCC5 through the eighth resistor R8, and the drain of the third switching tube Q3 is connected to the drain of the fourth switching tube Q4; the gate of the fourth switching tube Q4 is connected to the second output terminal of the first switching driving chip U3 through the fourteenth resistor R14 and the tenth resistor R10, the anode of the fourth diode D4 is connected to the gate of the fourth switching tube Q4, and the cathode of the fourth diode D4 is connected to one end of the fourteenth resistor R14 and the tenth resistor R10, which are interconnected.
The first switch tube Q1 and the fourth switch tube Q4 form a group of switches to control the driving power supply VCC5 to output one power supply state, and the second switch tube Q2 and the second switch tube Q2 form a group of switches to control the driving power supply VCC5 to output another power supply state. When the first output terminal of the logic conversion circuit 11 outputs a high level signal and the second output terminal is a low level signal, the first switch Q1 and the fourth switch Q4 are turned off, and the second switch Q2 and the third switch Q3 are turned on. The second switch Q2 outputs a low level signal when turned on, and the third switch Q3 outputs a high level signal (the output voltage of the driving power VCC 5) when turned on. When the first output terminal of the logic conversion circuit 11 outputs a low level signal and the second output terminal is a high level signal, the first switch Q1 and the fourth switch Q4 are turned on, and the second switch Q2 and the third switch Q3 are turned off. The first switch Q1 outputs a high level signal (the output voltage of the driving power VCC 5) when it is turned on, and the fourth switch Q4 outputs a low level signal when it is turned on.
The boost circuit 20 includes a transformer T1, the transformer T1 has a first primary input terminal, a second primary input terminal, a first secondary output terminal and a second secondary output terminal, the first primary input terminal of the transformer T1 is connected to a common terminal of the third switching tube Q3 and the fourth switching tube Q4, the second primary input terminal of the transformer T1 is connected to a common terminal of the first switching tube Q1 and the second switching tube Q2, and the first secondary output terminal and the second secondary output terminal of the transformer T1 jointly constitute the output terminal of the boost circuit 20. The transformer T1 is used to perform power supply output under the control of the switch drive circuit 12 and to perform voltage boosting processing on the output power supply.
With reference to the foregoing embodiments, when the first switch Q1 and the fourth switch Q4 are turned on, and the second switch Q2 and the third switch Q3 are turned off, the first primary input terminal of the transformer T1 inputs a high level signal, i.e., the output voltage of the driving power VCC5, and the second primary input terminal inputs a low level signal, the output of the first secondary output terminal is a forward voltage, and the output of the second secondary output terminal is a reverse voltage.
When the first switch tube Q1 and the fourth switch tube Q4 are turned on, and the second switch tube Q2 and the third switch tube Q3 are turned off, the first primary input end of the transformer T1 inputs a low level signal, the second primary input end inputs a high level signal, that is, the output voltage of the driving power supply VCC5, the output of the first secondary output end is a reverse voltage, and the output of the second secondary output end is a forward voltage.
The energy storage circuit 30 includes a fifth diode D5 and a seventh capacitor C7, an anode of the fifth diode D5 is connected to the first secondary output terminal of the transformer T1, a cathode of the fifth diode D5 is interconnected with one end of the seventh capacitor C7 and the driven terminal of the IGBT, and the other end of the seventh capacitor C7 is interconnected with the second secondary output terminal of the transformer T1 and the drain of the IGBT. The seventh capacitor C7 forms a resonant circuit with the transformer T1, and can increase the output voltage.
The discharge circuit 40 includes a fifth switch Q5 and a fifteenth resistor R15, a gate of the fifth switch Q5 is connected to the first secondary output terminal of the transformer T1, a source of the fifth switch Q5 is connected to one end of the fifth diode D5 and the seventh capacitor C7, and a drain of the fifth switch Q5 is connected to the second secondary output terminal of the transformer T1 via the fifteenth resistor R15. When the forward voltage is output from the first secondary output terminal of the transformer T1, the fifth switching tube Q5 is turned off, when the reverse voltage is output from the first secondary output terminal of the transformer T1, the fifth switching tube Q5 is turned on, the seventh capacitor C7 discharges through the fifteenth resistor R15, when the forward voltage is output from the first secondary output terminal of the transformer T1 again, the fifth switching tube Q5 is turned off, and the seventh capacitor C7 stops discharging and charges again, so that the cycle is repeated.
The negative voltage generating circuit 50 includes a sixth diode D6, a first voltage regulator tube Z1, an eighth capacitor C8, and a ninth capacitor C9; an anode of the sixth diode D6 is connected to the first secondary output terminal of the transformer T1, a cathode of the sixth diode D6 is connected to an anode of an eighth capacitor C8, and a cathode of the eighth capacitor C8 is connected to the second secondary output terminal of the transformer T1; the ninth capacitor C9 and the first voltage regulator tube Z1 are connected in parallel, one end of the interconnection of the ninth capacitor C9 and the anode of the first voltage regulator tube Z1 is connected with the second secondary output end of the transformer T1, and one end of the interconnection of the ninth capacitor C9 and the cathode of the first voltage regulator tube Z1 is connected with the other end of the seventh capacitor C7. The eighth capacitor C8 is a polar capacitor, and has a larger capacitance than the ninth capacitor C9 and the seventh capacitor C7. Since the first regulator tube Z1 is connected in parallel with the ninth capacitor C9, the magnitude of the charging voltage of the ninth capacitor C9 is limited.
The specific circuit principles of the boost circuit 20, the discharge circuit 40, the negative voltage generating circuit 50, and the tank circuit 30 are described in conjunction with fig. 1 and fig. 2 as a whole:
when the first secondary output end of the transformer T1 outputs forward voltage and the second secondary output end outputs reverse voltage, the fifth switch tube Q5 is in a turn-off state, the seventh capacitor C7 and junction capacitor of the IGBT are charged to store energy, so that the IGBT is turned on, the transformer T1 boosts the voltage of the driving power supply VCC5, and the resonance circuit formed by the seventh capacitor C7 improves the starting voltage of the IGBT, so that the turn-on speed of the IGBT is increased.
Meanwhile, the forward voltage output by the first secondary output end of the transformer T1 also charges the eighth capacitor C8 and the ninth capacitor C9 through the sixth diode D6, and due to the limiting effect of the first voltage regulator tube Z1, the charged voltage of the ninth capacitor C9 after being fully charged is the voltage Ud1 at the two ends of the first voltage regulator tube Z1, and the Ud1 is in a negative voltage state.
When the first secondary output end of the transformer T1 outputs reverse voltage and the second secondary output end outputs forward voltage, the fifth switching tube Q5 is in a conducting state, the seventh capacitor C7 discharges through the fifth resistor R5, at the moment, the gate bias voltage of the IGBT is equal to the sum of the energy storage voltage of the seventh capacitor C7 and the voltage Ud1 at the two ends of the first voltage-regulator tube Z1, and the gate bias voltage of the IGBT is rapidly pulled down due to the fact that Ud1 is in a negative voltage state, and the IGBT is rapidly turned off.
Further, the IGBT driving circuit further includes a clamping circuit 60, and the clamping circuit 60 is connected to the output terminal of the tank circuit 30. The clamp circuit 60 is used to prevent the gate of the IGBT from being damaged when it is under overvoltage.
Preferably, the clamping circuit 60 comprises a second zener diode Z2 and a third zener diode Z3, the cathode of the second zener diode Z2 is connected to one end of the interconnection of the fifth diode D5 and the seventh capacitor C7, the anode of the second zener diode Z2 is connected to the anode of the third zener diode Z3, and the cathode of the third zener diode Z3 is connected to the cathode of the sixth diode D6. The clamp circuit 60 consisting of the second voltage regulator tube Z2 and the third voltage regulator tube Z3 limits the voltage range of the gate electrode of the IGBT and protects the gate electrode of the IGBT from breakdown.
The above only be the preferred embodiment of the utility model discloses a not consequently restriction the utility model discloses a patent range, all are in the utility model discloses a conceive, utilize the equivalent structure transform of what the content was done in the description and the attached drawing, or direct/indirect application all is included in other relevant technical field the utility model discloses a patent protection within range.

Claims (10)

1. An IGBT drive circuit is characterized by comprising a drive signal generation circuit, a booster circuit, an energy storage circuit, a discharge circuit and a negative pressure generation circuit, wherein the output end of the drive signal generation circuit is connected with the input end of the booster circuit, and the output end of the booster circuit is connected with the input end of the energy storage circuit; the output end of the energy storage circuit is connected with the driven end of the IGBT; the input end of the negative voltage generating circuit is connected with the output end of the booster circuit, and the output end of the negative voltage discharging circuit is connected with the discharging end of the energy storage circuit through the discharging circuit; wherein,
the driving signal generating circuit is used for generating positive and negative alternative IGBT driving signals;
the booster circuit is used for boosting the IGBT driving signals with the positive polarity and the negative polarity alternately and then outputting the boosted IGBT driving signals;
the energy storage circuit is used for storing energy when the booster circuit outputs forward voltage so as to drive the IGBT to be conducted; discharging through the discharging circuit when the boosting circuit outputs a negative voltage to turn off the IGBT;
the negative voltage generating circuit is used for storing energy when the booster circuit outputs a forward voltage, generating a negative voltage and providing the negative voltage for the discharge circuit when the booster circuit outputs a reverse voltage.
2. The IGBT driver circuit of claim 1, wherein the drive signal generation circuit comprises a controller, a logic conversion circuit, a switch drive circuit, and a drive power supply, the controller comprises a first signal output end and a second signal output end, the logic conversion circuit comprises a first input end, a second input end, a first output end and a second output end, the first input end of the logic conversion circuit is connected with the first signal output end of the controller, a second input terminal of the logic conversion circuit is connected with a second signal output terminal of the controller, the first output end and the second output end of the logic conversion circuit are correspondingly connected with the first controlled end and the second controlled end of the switch driving circuit, the input end of the switch driving circuit is connected with the driving power supply, and the output end of the switch driving circuit is the output end of the driving signal generating circuit; wherein,
the controller is used for outputting a first preset driving signal and a second preset driving signal;
the logic conversion circuit is used for converting the first preset driving signal and the second preset driving signal into two paths of switching control signals with equal amplitude, equal frequency, equal duty ratio and 180-degree phase difference;
And the switch driving circuit is used for controlling the driving power supply to output the positive and negative alternative IGBT driving signals according to the two paths of switch control signals with equal amplitude, equal frequency, equal duty ratio and 180-degree phase difference.
3. The IGBT driving circuit according to claim 2, wherein the logic conversion circuit comprises a first power supply, a second power supply, a first flip-flop, a first inverter, a second inverter, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a seventh resistor, an eighth resistor and a first switch driving chip, the first switch driving chip comprises a power supply pin, a first input pin, a second input pin, a first output pin, a second output pin and a ground pin; a first signal output end of the controller is connected with the first power supply through the first resistor, and a second signal output end of the controller is connected with the second power supply through the third resistor; one input end of the first trigger is connected with a first signal output end of the controller through the second resistor, the other input end of the first trigger is connected with a second signal output end of the controller through the fourth resistor, the output end of the first trigger is connected with one end of the fifth resistor through the second phase inverter, and the other end of the fifth resistor is respectively connected with a first input pin and a second input pin of the first switch driving chip; the power pin of the first switch driving chip is connected with the driving power supply through the seventh resistor and the eighth resistor, the grounding pin of the first switch driving chip is grounded, the first output pin of the first switch driving chip is the first output end of the logic conversion circuit, and the second output pin of the first switch driving chip is the second output end of the logic conversion circuit.
4. The IGBT driving circuit according to claim 3, wherein the switch driving circuit comprises a first switch tube, a second switch tube, a third switch tube, a fourth switch tube, a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a first diode, a second diode, a third diode and a fourth diode; the grid electrode of the first switch tube is connected with the first output pin of the first switch driving chip through the eleventh resistor and the ninth resistor in sequence, the cathode of the first diode is connected with the grid electrode of the first switch tube, and the anode of the first diode is connected with one end of the ninth resistor and the eleventh resistor which are connected with each other; the source electrode of the first switch tube is connected with the driving power supply through the eighth resistor, and the drain electrode of the first switch tube is connected with the drain electrode of the second switch tube; a grid electrode of the second switch tube is connected with a first output end of the first switch driving chip through the twelfth resistor and the ninth resistor in sequence, an anode of the second diode is connected with the grid electrode of the second switch tube, and a cathode of the second diode is connected with one end of the eleventh resistor and one end of the tenth resistor which are connected with each other; the grid electrode of the third switching tube is connected with the second output pin of the first switch driving chip through the thirteenth resistor and the tenth resistor in sequence, the cathode of the third diode is connected with the grid electrode of the third switching tube, and the anode of the third diode is connected with one end of the tenth resistor and the thirteenth resistor which are connected with each other; the source electrode of the third switching tube is connected with the driving power supply through the eighth resistor, and the drain electrode of the third switching tube is connected with the drain electrode of the fourth switching tube; the grid electrode of the fourth switch tube is connected with the second output end of the first switch driving chip through the fourteenth resistor and the tenth resistor, the anode of the fourth diode is connected with the grid electrode of the fourth switch tube, and the cathode of the fourth diode is connected with one end of the fourteenth resistor and one end of the tenth resistor, which are interconnected.
5. The IGBT driver circuit of claim 4, wherein the boost circuit comprises a transformer having a first primary input terminal, a second primary input terminal, a first secondary output terminal, and a second secondary output terminal, the first primary input terminal of the transformer being connected to the common terminal of the third and fourth switching tubes, the second primary input terminal of the transformer being connected to the common terminal of the first and second switching tubes, the first and second secondary output terminals of the transformer together comprising the output terminal of the boost circuit.
6. The IGBT drive circuit according to claim 5, wherein the tank circuit comprises a fifth diode and a seventh capacitor, wherein the anode of the fifth diode is connected with the first secondary output end of the transformer, the cathode of the fifth diode is interconnected with one end of the seventh capacitor and the driven end of the IGBT, and the other end of the seventh capacitor is interconnected with the second secondary output end of the transformer and the drain of the IGBT.
7. The IGBT driving circuit according to claim 6, wherein the discharge circuit comprises a fifth switching tube and a fifteenth resistor, the gate of the fifth switching tube is connected with the first secondary output end of the transformer, the source of the fifth switching tube is connected with one end of the interconnection of the fifth diode and the seventh capacitor, and the drain of the fifth switching tube is connected with the second secondary output end of the transformer through the fifteenth resistor.
8. The IGBT drive circuit according to claim 7, wherein the negative voltage generation circuit comprises a sixth diode, a first voltage regulator tube, an eighth capacitor and a ninth capacitor; the anode of the sixth diode is connected with the first secondary output end of the transformer, the cathode of the sixth diode is connected with the anode of an eighth capacitor, and the cathode of the eighth capacitor is connected with the second secondary output end of the transformer; the ninth capacitor is connected with the first voltage-regulator tube in parallel, one end of the ninth capacitor, which is connected with the anode of the first voltage-regulator tube, is connected with the second secondary output end of the transformer, and one end of the ninth capacitor, which is connected with the cathode of the first voltage-regulator tube, is connected with the other end of the seventh capacitor.
9. The IGBT driver circuit according to claim 8, further comprising a clamp circuit connected to an output of the tank circuit.
10. The IGBT driver circuit according to claim 9, further comprising a clamp circuit, the clamp circuit comprising a second regulator tube and a third regulator tube, a cathode of the second regulator tube being connected to one end of the interconnection of the fifth diode and the seventh capacitor, an anode of the second regulator tube being connected to an anode of the third regulator tube, and a cathode of the third regulator tube being connected to a cathode of the sixth diode.
CN201521031357.2U 2015-12-11 2015-12-11 Igbt drive circuit Withdrawn - After Issue CN205232017U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105406692A (en) * 2015-12-11 2016-03-16 深圳市瑞凌实业股份有限公司 IGBT driving circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105406692A (en) * 2015-12-11 2016-03-16 深圳市瑞凌实业股份有限公司 IGBT driving circuit

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