CN205152397U - Improve device of physics gaseous phase transmission method crystal growth furnace temperature field uniformity - Google Patents
Improve device of physics gaseous phase transmission method crystal growth furnace temperature field uniformity Download PDFInfo
- Publication number
- CN205152397U CN205152397U CN201520976897.1U CN201520976897U CN205152397U CN 205152397 U CN205152397 U CN 205152397U CN 201520976897 U CN201520976897 U CN 201520976897U CN 205152397 U CN205152397 U CN 205152397U
- Authority
- CN
- China
- Prior art keywords
- coil
- temperature field
- furnace temperature
- growth furnace
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to an improve device of physics gaseous phase transmission method crystal growth furnace temperature field uniformity, including the crystal growth stove, the crystal growth stove includes radio -frequency power supply, contact electrode, coil, heat preservation and graphite crucible, the coil is evenly arranged with horizontal axis symmetry mode the heat preservation outside, in addition, this coil accessible rotary device realizes around the heat preservation rotatoryly. The utility model discloses a change coil encloses growth stove canoe and improves the homogeneity of growth furnace temperature field, the utility model discloses the coil can adopt single or many twine into the coil with the line to guarantee the coil and arrange around the growth stove with horizontal axis symmetry mode, help reducing the coil and arrange the great growth stove axial -temperature gradient who arouses because of the spiral. In addition, the radio -frequency power supply links to each other with free contact with the coil for the coil can be rotatory around the growth stove, realizes the three -dimensional even heating to the growth stove, improves growth furnace temperature field uniformity.
Description
Technical field
The utility model relates to a kind of device improving physical vapor transport crystal growth furnace temperature field uniformity, belongs to crystal growing furnace technical field.
Background technology
Carborundum crystals, aluminum nitride crystal have the performances such as forbidden band is wide, thermal conductivity is high, breakdown electric field is high, are applicable to preparing high pressure resistant, high frequency, high temperature microelectronic device, are widely used in the fields such as illumination, aerospace, radar detection.Physical vapor transport (PVT) method is the main method of grow silicon carbide crystals, aluminum nitride crystal, by radio-frequency induction plumbago crucible for growth furnace provides thermal source.At present, for reducing the defect such as microtubule, dislocation of crystals, improve crystal mass, the thermograde of Optimal Growing furnace temperature field, reduction growth furnace is the Main way of current process modification.
Conventional growth stove prioritization scheme emphasis improves growth furnace structure and operating procedure, have ignored coil around growth furnace canoe and fixed form thereof to the impact of Uniformity of Temperature Field, the knowhow stage is still on the understanding of this impact, temperature gradient distribution homogeneity in raising plumbago crucible is subject to certain restrictions.
Utility model content
For the deficiencies in the prior art, the utility model provides a kind of device improving physical vapor transport crystal growth furnace temperature field uniformity.
The technical solution of the utility model is as follows:
Improve a device for physical vapor transport crystal growth furnace temperature field uniformity, comprise crystal growing furnace, described crystal growing furnace comprises radio-frequency power supply, contacts electrode, coil, thermal insulation layer and plumbago crucible; Described coil is evenly arranged in outside described thermal insulation layer with transverse axis symmetric mode.
Preferably, the quantity of described coil is single, and described single coil is wrapped in outside thermal insulation layer in arc type mode.
Preferably, the quantity of described coil is two, and described two coils are wound around in arc type mode respectively and are symmetricly set on the outside of thermal insulation layer.
Preferably, described crystal growing furnace also comprises swivel arrangement, and described coil is arranged on the spinning device, and described swivel arrangement band moving winding rotates.
Preferably, described swivel arrangement comprises the pallet, support and the power take-off mechanism that connect successively, and described coil is arranged on pallet.
Preferably, described power take-off mechanism is motor.
Preferably, described contacts electrode is connected with coil contact formula.The benefit of this design is, electrode and coil movable contact, facilitate coil to rotate around thermal insulation layer, realizes the homogeneous heating to growth furnace.
Preferably, described crystal growing furnace also comprises hoisting appliance, and described hoisting appliance is connected with tray bottom, and described hoisting appliance promotion pallet realizes coil entirety and moves up and down.
The beneficial effects of the utility model are:
1. the utility model encloses growth furnace canoe to improve the homogeneity of growth furnace temperature field by changing coil, compared with conventional growth stove single coil spiral winding mode, the utility model coil can adopt single or how to be wound in coil with line, and ensure that coil is arranged around growth furnace with transverse axis symmetric mode, contribute to the larger growth furnace axial-temperature gradient that reduction coil causes because of screw arrangement.
2. the utility model radio-frequency power supply is connected in contact free mode with coil, and coil can be rotated around growth furnace, and this technique can reach the object improving growth furnace temperature field uniformity.On the one hand, the utility model changes conventional growth stove radio-frequency power supply and is fixedly connected with mode with coil, utilizes contacts electrode to ensure radio-frequency power supply and coil contact free, optimizes coil electricity mode; On the other hand, compared with conventional growth stove coil stationary decoration form, the utility model coil can rotate around growth furnace via coil rotation control mechanism band moving winding, realizes the three-dimensional homogeneous heating to growth furnace, improves growth furnace temperature field uniformity.
Accompanying drawing explanation
Fig. 1 is the structural representation that the utility model improves the device of physical vapor transport crystal growth furnace temperature field uniformity.
Fig. 2 is the expansion schematic diagram that in the utility model, single coil transverse axis symmetry is wound around.
Fig. 3 is the expansion schematic diagram that in the utility model, two previous level rotational symmetry are wound around.
Wherein: 1, radio-frequency power supply; 2, contacts electrode; 3, coil; 4, thermal insulation layer; 5, plumbago crucible; 6, hoisting appliance; 7, power take-off mechanism; 8, pallet; 9, growth furnace.
Embodiment
Also by reference to the accompanying drawings the utility model is described further below by embodiment, but is not limited thereto.
Embodiment 1:
As shown in Fig. 3 and Fig. 1, the present embodiment provides a kind of device improving physical vapor transport crystal growth furnace temperature field uniformity, comprise crystal growing furnace, this crystal growing furnace comprises radio-frequency power supply 1, contacts electrode 2, coil 3, thermal insulation layer 4 and plumbago crucible 5, radio-frequency power supply 1 is connected with coil 3 contact by contacts electrode 2, be outside equipped with thermal insulation layer 4 at plumbago crucible 5, coil 3 is put in the winding of thermal insulation layer 4 outer felt, and coil 3 is evenly arranged in outside described thermal insulation layer 4 with transverse axis symmetric mode.
The quantity of coil 3 is single, and this single coil is wrapped in outside thermal insulation layer in arc type mode.Single coil is first wound around the half-turn outside thermal insulation layer from top to bottom, then single coil is wound around the other half-turn outside thermal insulation layer from bottom to up, concrete operation method: the clockwise horizontal wrap of single coil first half-turn, then one section is extended straight down, then anticlockwise horizontal is wound around second half-turn, then one section is extended straight down, then clockwise horizontal wrap the 3rd half-turn again, the like formed bow font be wound around, after being wound into bottom, be more from bottom to top wound around the half-turn of the other side of thermal insulation layer in an identical manner from bottom.
This crystal growing furnace also comprises swivel arrangement, and this swivel arrangement comprises pallet 8, support and the power take-off mechanism 7 connected successively, and coil is arranged on pallet 8.The bottom of pallet 8 is fixedly connected with support, and the end of support connects power take-off mechanism, and power take-off mechanism 7 selects motor.
In the upper end of coil, contacts electrode 2 contacts with coil 3 and makes connection, and when coil 3 rotates around thermal insulation layer, the maintenance of contacts electrode 2 moment is connected with coil 3 contact.
This crystal growing furnace also comprises hoisting appliance 6, and this hoisting appliance is prior art, and hoisting appliance 6 is connected with the bottom of pallet 8, hoisting appliance and swivel arrangement separate, work separately.Hoisting appliance is by upwardly pallet or pull pallet to realize coil entirety downwards to move up and down.
Embodiment 2:
The present embodiment provides a kind of device improving physical vapor transport crystal growth furnace temperature field uniformity, structure as described in Example 1, its difference is: the quantity of coil 3 is two, is wound around respectively by two coils and is symmetricly set on the outside of thermal insulation layer 4 in arc type mode.The quantity of coil also can be three or more roots, and the quantity of concrete coil is selected according to the size specification of growth furnace.
The present embodiment adopts two coils, and the bending method of every root coil is the same, at the symmetry centre place of two coils, the vacant locations of single line circle can supplement by another root, as circle marked position in Fig. 3, such in-furnace temperature relative to single coil meeting evenly; And symmetrical centered by single coil stretch-out view, and the coil bending Relatively centralized in central position, as circle marked position in Fig. 2, this position can cause the temperature drift of stove inner bending place.
The utility model by making improvement to the coil winding mode of conventional crystal growth furnace, and makes coil realize rotary heating around thermal insulation layer by swivel arrangement, realizes the three-dimensional homogeneous heating to growth furnace, improves crystal growth furnace temperature field uniformity.
Claims (8)
1. one kind is improved the device of physical vapor transport crystal growth furnace temperature field uniformity, comprise crystal growing furnace, described crystal growing furnace comprises radio-frequency power supply, contacts electrode, coil, thermal insulation layer and plumbago crucible, it is characterized in that, described coil is evenly arranged in outside described thermal insulation layer with transverse axis symmetric mode.
2. the device improving physical vapor transport crystal growth furnace temperature field uniformity as claimed in claim 1, it is characterized in that, the quantity of described coil is single, and described single coil is wrapped in outside thermal insulation layer in arc type mode.
3. the device improving physical vapor transport crystal growth furnace temperature field uniformity as claimed in claim 1, it is characterized in that, the quantity of described coil is two, and described two coils are wound around in arc type mode respectively and are symmetricly set on the outside of thermal insulation layer.
4. the device improving physical vapor transport crystal growth furnace temperature field uniformity as claimed in claim 1, it is characterized in that, described crystal growing furnace also comprises swivel arrangement, and described coil is arranged on the spinning device, and described swivel arrangement band moving winding rotates.
5. the device improving physical vapor transport crystal growth furnace temperature field uniformity as claimed in claim 4, it is characterized in that, described swivel arrangement comprises the pallet, support and the power take-off mechanism that connect successively, and described coil is arranged on pallet.
6. the device improving physical vapor transport crystal growth furnace temperature field uniformity as claimed in claim 5, it is characterized in that, described power take-off mechanism is motor.
7. the device improving physical vapor transport crystal growth furnace temperature field uniformity as claimed in claim 1 or 2, it is characterized in that, described contacts electrode is connected with coil contact formula.
8. the device improving physical vapor transport crystal growth furnace temperature field uniformity as claimed in claim 5, it is characterized in that, described crystal growing furnace also comprises hoisting appliance, and described hoisting appliance is connected with tray bottom, and described hoisting appliance promotion pallet realizes coil entirety and moves up and down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520976897.1U CN205152397U (en) | 2015-11-30 | 2015-11-30 | Improve device of physics gaseous phase transmission method crystal growth furnace temperature field uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520976897.1U CN205152397U (en) | 2015-11-30 | 2015-11-30 | Improve device of physics gaseous phase transmission method crystal growth furnace temperature field uniformity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205152397U true CN205152397U (en) | 2016-04-13 |
Family
ID=55688112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520976897.1U Withdrawn - After Issue CN205152397U (en) | 2015-11-30 | 2015-11-30 | Improve device of physics gaseous phase transmission method crystal growth furnace temperature field uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205152397U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105256371A (en) * | 2015-11-30 | 2016-01-20 | 山东省科学院能源研究所 | Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method |
| CN106222739A (en) * | 2016-09-13 | 2016-12-14 | 山东省科学院能源研究所 | A kind of device improving physical vapor transport crystal growing furnace thermo parameters method |
| CN106906515A (en) * | 2017-04-20 | 2017-06-30 | 山东大学 | A kind of SiC single crystal grower that can realize temperature field real-time adjustment and the method that SiC single crystal is grown using the device |
| WO2018129862A1 (en) * | 2017-01-13 | 2018-07-19 | 许昌天戈硅业科技有限公司 | Crystal growth furnace heater and sapphire crystal growth furnace |
| CN111814380A (en) * | 2020-07-16 | 2020-10-23 | 重庆大学 | Method for rapidly calculating temperature distribution of oil-immersed transformer winding by adopting two-dimensional axisymmetric model |
| CN113564696A (en) * | 2021-07-26 | 2021-10-29 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Device and method for improving radial uniformity of PVT method grown crystal |
-
2015
- 2015-11-30 CN CN201520976897.1U patent/CN205152397U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105256371A (en) * | 2015-11-30 | 2016-01-20 | 山东省科学院能源研究所 | Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method |
| CN106222739A (en) * | 2016-09-13 | 2016-12-14 | 山东省科学院能源研究所 | A kind of device improving physical vapor transport crystal growing furnace thermo parameters method |
| WO2018129862A1 (en) * | 2017-01-13 | 2018-07-19 | 许昌天戈硅业科技有限公司 | Crystal growth furnace heater and sapphire crystal growth furnace |
| CN106906515A (en) * | 2017-04-20 | 2017-06-30 | 山东大学 | A kind of SiC single crystal grower that can realize temperature field real-time adjustment and the method that SiC single crystal is grown using the device |
| CN111814380A (en) * | 2020-07-16 | 2020-10-23 | 重庆大学 | Method for rapidly calculating temperature distribution of oil-immersed transformer winding by adopting two-dimensional axisymmetric model |
| CN111814380B (en) * | 2020-07-16 | 2023-10-24 | 重庆大学 | Method for rapidly calculating temperature distribution of winding of oil-immersed transformer by adopting two-dimensional axisymmetric model |
| CN113564696A (en) * | 2021-07-26 | 2021-10-29 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Device and method for improving radial uniformity of PVT method grown crystal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205152397U (en) | Improve device of physics gaseous phase transmission method crystal growth furnace temperature field uniformity | |
| CN105256371A (en) | Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method | |
| CN210974929U (en) | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus | |
| CN202390579U (en) | Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method | |
| CN111074340B (en) | Silicon carbide single crystal, substrate and preparation method thereof | |
| CN204570091U (en) | There is the single crystal growing furnace mending warm guide shell | |
| CN104451885A (en) | Method and device for growing silicon carbide crystal | |
| CN106868584B (en) | A kind of monocrystalline furnace resistor heater and the method for preparing silicon single crystal using the resistance heater | |
| CN114000198B (en) | Multi-crucible silicon carbide crystal synchronous growth method and equipment | |
| CN102703966A (en) | Device for growing carbonization silicon single crystal by using seed crystal temperature gradient method | |
| CN106367812A (en) | Graphite crucible capable of enhancing radial temperature uniformity of silicon carbide powder source | |
| CN110129890A (en) | A method of loop construction and magnetic control pulling of crystals for magnetic control pulling of crystals | |
| CN208038591U (en) | A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field | |
| CN105442038A (en) | Crucible rotating-type silicon carbide single crystal growth method | |
| CN204417644U (en) | A kind of silicon carbide crystal growing device | |
| CN109234800B (en) | Adjustable thermal field structure for preparing silicon carbide single crystal | |
| CN101279847A (en) | Preparation for YBCO Superconducting bulk doped with trace rare-earth element | |
| CN117051471B (en) | Device and method for growing silicon carbide crystal by liquid phase method | |
| CN205313716U (en) | Independent rotary mechanism of crucible in siC growth of single crystal equipment | |
| CN207998653U (en) | A kind of dual rotary pulling apparatus | |
| CN102912428B (en) | A kind of drawing device of gem crystal and method thereof | |
| CN105442044A (en) | Crucible independent rotating mechanism of SiC single crystal growth equipment | |
| CN116695255A (en) | Growth method of silicon carbide single crystal | |
| CN203922735U (en) | A kind of silicon core clamping device for polysilicon reduction furnace | |
| CN113174638B (en) | High-temperature secondary annealing method of silicon carbide crystals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160413 Effective date of abandoning: 20170808 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20160413 Effective date of abandoning: 20170808 |