CN205115663U - 一种改善区熔硅单晶硅生长的热场 - Google Patents
一种改善区熔硅单晶硅生长的热场 Download PDFInfo
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- CN205115663U CN205115663U CN201520813370.7U CN201520813370U CN205115663U CN 205115663 U CN205115663 U CN 205115663U CN 201520813370 U CN201520813370 U CN 201520813370U CN 205115663 U CN205115663 U CN 205115663U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract description 3
- 238000004857 zone melting Methods 0.000 title abstract description 3
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 235000019994 cava Nutrition 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002500 effect on skin Effects 0.000 abstract description 2
- 239000000155 melt Substances 0.000 abstract description 2
- 230000005389 magnetism Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 238000012797 qualification Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
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Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520813370.7U CN205115663U (zh) | 2015-10-19 | 2015-10-19 | 一种改善区熔硅单晶硅生长的热场 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201520813370.7U CN205115663U (zh) | 2015-10-19 | 2015-10-19 | 一种改善区熔硅单晶硅生长的热场 |
Publications (1)
| Publication Number | Publication Date |
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| CN205115663U true CN205115663U (zh) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520813370.7U Active CN205115663U (zh) | 2015-10-19 | 2015-10-19 | 一种改善区熔硅单晶硅生长的热场 |
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| CN (1) | CN205115663U (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257899A (zh) * | 2019-06-24 | 2019-09-20 | 天津中环领先材料技术有限公司 | 一种平衡热场的区熔线圈 |
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2015
- 2015-10-19 CN CN201520813370.7U patent/CN205115663U/zh active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257899A (zh) * | 2019-06-24 | 2019-09-20 | 天津中环领先材料技术有限公司 | 一种平衡热场的区熔线圈 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181101 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191227 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |