CN203602749U - 一种用于拉制六英寸区熔硅单晶的加热线圈 - Google Patents
一种用于拉制六英寸区熔硅单晶的加热线圈 Download PDFInfo
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- CN203602749U CN203602749U CN201320773023.7U CN201320773023U CN203602749U CN 203602749 U CN203602749 U CN 203602749U CN 201320773023 U CN201320773023 U CN 201320773023U CN 203602749 U CN203602749 U CN 203602749U
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- 239000013078 crystal Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 238000010438 heat treatment Methods 0.000 title abstract 4
- 238000005520 cutting process Methods 0.000 claims abstract description 26
- 230000000694 effects Effects 0.000 abstract description 6
- 230000001976 improved effect Effects 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 5
- 238000004857 zone melting Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003450 growing effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320773023.7U CN203602749U (zh) | 2013-11-28 | 2013-11-28 | 一种用于拉制六英寸区熔硅单晶的加热线圈 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320773023.7U CN203602749U (zh) | 2013-11-28 | 2013-11-28 | 一种用于拉制六英寸区熔硅单晶的加热线圈 |
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| Publication Number | Publication Date |
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| CN203602749U true CN203602749U (zh) | 2014-05-21 |
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| CN201320773023.7U Expired - Lifetime CN203602749U (zh) | 2013-11-28 | 2013-11-28 | 一种用于拉制六英寸区熔硅单晶的加热线圈 |
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| CN (1) | CN203602749U (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087035A (zh) * | 2016-07-29 | 2016-11-09 | 天津市环欧半导体材料技术有限公司 | 一种改善区熔径向电阻率均匀性的线圈结构 |
| CN108179462A (zh) * | 2016-12-08 | 2018-06-19 | 有研半导体材料有限公司 | 一种用于制备区熔大直径单晶的加热线圈 |
| CN115369474A (zh) * | 2021-05-18 | 2022-11-22 | 胜高股份有限公司 | 感应加热绕组及使用其的单晶制造装置及单晶的制造方法 |
-
2013
- 2013-11-28 CN CN201320773023.7U patent/CN203602749U/zh not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087035A (zh) * | 2016-07-29 | 2016-11-09 | 天津市环欧半导体材料技术有限公司 | 一种改善区熔径向电阻率均匀性的线圈结构 |
| CN106087035B (zh) * | 2016-07-29 | 2019-05-07 | 天津中环领先材料技术有限公司 | 一种改善区熔径向电阻率均匀性的线圈结构 |
| CN108179462A (zh) * | 2016-12-08 | 2018-06-19 | 有研半导体材料有限公司 | 一种用于制备区熔大直径单晶的加热线圈 |
| CN115369474A (zh) * | 2021-05-18 | 2022-11-22 | 胜高股份有限公司 | 感应加热绕组及使用其的单晶制造装置及单晶的制造方法 |
| CN115369474B (zh) * | 2021-05-18 | 2024-02-13 | 胜高股份有限公司 | 感应加热绕组及使用其的单晶制造装置及单晶的制造方法 |
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| C14 | Grant of patent or utility model | ||
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Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Patentee after: Guotai Semiconductor Material Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Patentee before: Guotai Semiconductor Material Co.,Ltd. |
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| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. Patentee before: Guotai Semiconductor Material Co.,Ltd. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150709 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20150709 |
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Effective date of registration: 20150709 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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