CN203049080U - 一种用于区熔法制备硅单晶的加热线圈 - Google Patents
一种用于区熔法制备硅单晶的加热线圈 Download PDFInfo
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- CN203049080U CN203049080U CN 201220642790 CN201220642790U CN203049080U CN 203049080 U CN203049080 U CN 203049080U CN 201220642790 CN201220642790 CN 201220642790 CN 201220642790 U CN201220642790 U CN 201220642790U CN 203049080 U CN203049080 U CN 203049080U
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CN 201220642790 CN203049080U (zh) | 2012-11-28 | 2012-11-28 | 一种用于区熔法制备硅单晶的加热线圈 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103993349A (zh) * | 2014-05-06 | 2014-08-20 | 洛阳金诺机械工程有限公司 | 一种使用区熔法拉制单晶硅棒的高频线圈 |
CN106087035A (zh) * | 2016-07-29 | 2016-11-09 | 天津市环欧半导体材料技术有限公司 | 一种改善区熔径向电阻率均匀性的线圈结构 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103993349A (zh) * | 2014-05-06 | 2014-08-20 | 洛阳金诺机械工程有限公司 | 一种使用区熔法拉制单晶硅棒的高频线圈 |
CN106087035A (zh) * | 2016-07-29 | 2016-11-09 | 天津市环欧半导体材料技术有限公司 | 一种改善区熔径向电阻率均匀性的线圈结构 |
CN106087035B (zh) * | 2016-07-29 | 2019-05-07 | 天津中环领先材料技术有限公司 | 一种改善区熔径向电阻率均匀性的线圈结构 |
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Effective date of registration: 20181029 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191230 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20130710 |
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