CN205035491U - 一种制备区熔单晶的凸台线圈 - Google Patents
一种制备区熔单晶的凸台线圈 Download PDFInfo
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- CN205035491U CN205035491U CN201520811656.1U CN201520811656U CN205035491U CN 205035491 U CN205035491 U CN 205035491U CN 201520811656 U CN201520811656 U CN 201520811656U CN 205035491 U CN205035491 U CN 205035491U
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- 239000013078 crystal Substances 0.000 title claims abstract description 21
- 238000004857 zone melting Methods 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000007664 blowing Methods 0.000 claims abstract description 11
- 238000005520 cutting process Methods 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 238000002844 melting Methods 0.000 abstract description 7
- 230000008018 melting Effects 0.000 abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 239000002210 silicon-based material Substances 0.000 abstract description 3
- 125000004122 cyclic group Chemical group 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 235000012489 doughnuts Nutrition 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000008358 core component Substances 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520811656.1U CN205035491U (zh) | 2015-10-19 | 2015-10-19 | 一种制备区熔单晶的凸台线圈 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520811656.1U CN205035491U (zh) | 2015-10-19 | 2015-10-19 | 一种制备区熔单晶的凸台线圈 |
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| Publication Number | Publication Date |
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| CN205035491U true CN205035491U (zh) | 2016-02-17 |
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| CN201520811656.1U Active CN205035491U (zh) | 2015-10-19 | 2015-10-19 | 一种制备区熔单晶的凸台线圈 |
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| CN (1) | CN205035491U (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154967A (zh) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | 一种制备区熔单晶的凸台线圈 |
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- 2015-10-19 CN CN201520811656.1U patent/CN205035491U/zh active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154967A (zh) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | 一种制备区熔单晶的凸台线圈 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181031 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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| CP03 | Change of name, title or address |