CN205115662U - 一种区熔气掺单晶用吹气线圈 - Google Patents
一种区熔气掺单晶用吹气线圈 Download PDFInfo
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- CN205115662U CN205115662U CN201520811485.2U CN201520811485U CN205115662U CN 205115662 U CN205115662 U CN 205115662U CN 201520811485 U CN201520811485 U CN 201520811485U CN 205115662 U CN205115662 U CN 205115662U
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- 238000007664 blowing Methods 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 title abstract description 19
- 238000004857 zone melting Methods 0.000 title abstract 3
- 238000005520 cutting process Methods 0.000 claims description 11
- 239000000155 melt Substances 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 43
- 238000000034 method Methods 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000007792 gaseous phase Substances 0.000 abstract 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- 235000012489 doughnuts Nutrition 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009377 nuclear transmutation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
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CN201520811485.2U CN205115662U (zh) | 2015-10-19 | 2015-10-19 | 一种区熔气掺单晶用吹气线圈 |
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CN201520811485.2U CN205115662U (zh) | 2015-10-19 | 2015-10-19 | 一种区熔气掺单晶用吹气线圈 |
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CN205115662U true CN205115662U (zh) | 2016-03-30 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107287655A (zh) * | 2016-04-12 | 2017-10-24 | 上海新昇半导体科技有限公司 | 单晶硅锭及晶圆的形成方法 |
CN107937978A (zh) * | 2017-12-11 | 2018-04-20 | 中国电子科技集团公司第四十六研究所 | 一种用于生产气相掺杂区熔硅单晶的掺杂气体充入装置 |
EP4092167A1 (en) * | 2021-05-18 | 2022-11-23 | Sumco Corporation | Induction heating coil and single crystal manufacturing apparatus and method using the induction heating coil |
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2015
- 2015-10-19 CN CN201520811485.2U patent/CN205115662U/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107287655A (zh) * | 2016-04-12 | 2017-10-24 | 上海新昇半导体科技有限公司 | 单晶硅锭及晶圆的形成方法 |
CN107937978A (zh) * | 2017-12-11 | 2018-04-20 | 中国电子科技集团公司第四十六研究所 | 一种用于生产气相掺杂区熔硅单晶的掺杂气体充入装置 |
EP4092167A1 (en) * | 2021-05-18 | 2022-11-23 | Sumco Corporation | Induction heating coil and single crystal manufacturing apparatus and method using the induction heating coil |
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C14 | Grant of patent or utility model | ||
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Effective date of registration: 20181102 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191218 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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