CN205004350U - 一种朗伯型大功率led封装结构 - Google Patents

一种朗伯型大功率led封装结构 Download PDF

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Publication number
CN205004350U
CN205004350U CN201520570483.9U CN201520570483U CN205004350U CN 205004350 U CN205004350 U CN 205004350U CN 201520570483 U CN201520570483 U CN 201520570483U CN 205004350 U CN205004350 U CN 205004350U
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lens
copper post
lambert
power led
led chip
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Expired - Fee Related
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CN201520570483.9U
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吕德钢
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Shenzhen top lighting technology Co., Ltd.
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SHENZHEN LEYOND OPTO ELECTRONICS CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

本实用新型公开了一种朗伯型大功率LED封装结构,包括基座、LED芯片以及透镜,基座上设有承台,承台上方设有铜柱,铜柱上与LED芯片粘贴连接,铜柱下方设有散热胶,散热胶使得铜柱和基座密封连接,基座外侧设有支架,基座上方通过勾合结构与透镜连接,透镜下端设有引脚,引脚通过引线与LED芯片连接,透镜内壁设有波浪形的凸纹。本实用新型实现了多芯片集成高功率封装易于贴装的功能,且组装方便,结构牢固;另外,本实用新型适散热效果好,还能够减少光源光线传播过程中的衰减,使其发出的光强度更高。

Description

一种朗伯型大功率LED封装结构
技术领域
本实用新型涉及LED光源领域,更具体地说,涉及一种朗伯型大功率LED封装结构。
背景技术
1W朗伯型LED产品有着出光率高的优点,多芯片高功率LED集成模组有着贴装方便的优点。但是,现有的1W朗伯型LED的产品结构存在诸多缺陷:其不能应用于高功率的LED集成封装;整体装配结构复杂,不利于生产实施。中国专利号为201420153770.5的专利申请也提出了一种LED封装结构,针对上述缺陷进行了改进。但是,在朗伯型LED产品中,其各个部件的功率较大、产热较高,且没有有效散热的装置;LED光源的光强会随着传播过程衰减严重等等,这些是现有的LED封装结构所不能解决的。
上述缺陷,值得解决。
发明内容
本实用新型的目的在于针对上述技术缺陷,提供了一种朗伯型大功率LED封装结构。
本实用新型其解决技术问题所采用的技术方案如下所述:
一种朗伯型大功率LED封装结构,包括基座、LED芯片以及透镜,其特征在于,所述基座上设有承台,所述承台上方设有铜柱,所述铜柱上与所述LED芯片粘贴连接,所述铜柱下方设有散热胶,所述散热胶使得所述铜柱和所述基座密封连接,所述基座外侧设有支架,所述基座上方通过勾合结构与所述透镜连接,所述透镜下端设有引脚,所述引脚通过引线与所述LED芯片连接,所述透镜内壁设有波浪形的凸纹。
进一步的,所述勾合结构包括设于所述基座上的第一勾合部和所述所述透镜上的第二勾合部,所述第一勾合部呈“F”字形。
更进一步的,所述勾合结构还与所述引脚勾合连接。
进一步的,所述透镜和所述铜柱组成的空间内设有高透光的硅胶。
进一步的,所述透镜一塑成型。
进一步的,所述凸纹上设有聚光膜。
根据上述结构的本实用新型,其有益效果在于,本实用新型拥有了1W朗伯型LED的高出光率的外形结构,又实现了多芯片集成高功率封装易于贴装的功能;本实用新型组装方便,结构牢固;另外,本实用新型适用于各种大功率器件的LED产品,散热效果好,还能够减少光源光线传播过程中的衰减,使其发出的光强度更高。
附图说明
图1为本实用新型结构示意图。
在图中,10、基座;11、承台;12、第一勾合部;20、透镜;21、第二勾合部;22、引脚;23、凸纹;30、铜柱;31、散热胶;40、硅胶;50、支架;60、LED芯片;61、引线。
具体实施方式
下面结合附图以及实施方式对本实用新型进行进一步的描述:
如图1所示,一种朗伯型大功率LED封装结构,包括基座10、LED芯片60以及透镜20,基座10上设有承台11,承台11上方设有铜柱30,铜柱30上与LED芯片60粘贴连接,铜柱30下方设有散热胶31,散热胶31使得铜柱30和基座10密封连接,基座10外侧设有支架50,基座10上方通过勾合结构与透镜20连接,勾合结构包括设于基座10上的第一勾合部12和透镜上20的第二勾合部21,第一勾合部12呈“F”字形。
透镜20下端设有引脚22,引脚22通过引线61与LED芯片60连接,LED芯片60的电路连接可以为串联或并联或串并组合的方式。透镜20内壁设有波浪形的凸纹23,凸纹23上设有聚光膜。引脚22还与勾合结构勾合连接。
透镜20和铜柱30组成的空间内设有高透光的硅胶40,硅胶40排出空间内的空气使LED芯片60和引线61与空气绝缘;空间内还可以充入稀有气体。
优选地,透镜20一塑成型。
另外,需要指出的是,在本实用新型中:
铜柱30和支架50采用纯铜材质,铜柱30用来导热、固定硅片,支架50用来绑定引线61。透镜6采用耐高温、高透光率的塑胶,采用注塑挤压成型。
应当理解的是,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,而所有这些改进和变换都应属于本实用新型所附权利要求的保护范围。
上面结合附图对本实用新型专利进行了示例性的描述,显然本实用新型专利的实现并不受上述方式的限制,只要采用了本实用新型专利的方法构思和技术方案进行的各种改进,或未经改进将本实用新型专利的构思和技术方案直接应用于其它场合的,均在本实用新型的保护范围内。

Claims (6)

1.一种朗伯型大功率LED封装结构,包括基座、LED芯片以及透镜,其特征在于,所述基座上设有承台,所述承台上方设有铜柱,所述铜柱上与所述LED芯片粘贴连接,所述铜柱下方设有散热胶,所述散热胶使得所述铜柱和所述基座密封连接,所述基座外侧设有支架,所述基座上方通过勾合结构与所述透镜连接,所述透镜下端设有引脚,所述引脚通过引线与所述LED芯片连接,所述透镜内壁设有波浪形的凸纹。
2.根据权利要求1所述的一种朗伯型大功率LED封装结构,其特征在于,所述勾合结构包括设于所述基座上的第一勾合部和所述所述透镜上的第二勾合部,所述第一勾合部呈“F”字形。
3.根据权利要求2所述的一种朗伯型大功率LED封装结构,其特征在于,所述勾合结构还与所述引脚勾合连接。
4.根据权利要求1所述的一种朗伯型大功率LED封装结构,其特征在于,所述透镜和所述铜柱组成的空间内设有高透光的硅胶。
5.根据权利要求1所述的一种朗伯型大功率LED封装结构,其特征在于,所述透镜一塑成型。
6.根据权利要求1所述的一种朗伯型大功率LED封装结构,其特征在于,所述凸纹上设有聚光膜。
CN201520570483.9U 2015-08-03 2015-08-03 一种朗伯型大功率led封装结构 Expired - Fee Related CN205004350U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025011A (zh) * 2016-07-19 2016-10-12 江西利能低碳科技股份有限公司 Led光源减蓝光方法、led减蓝光光源装置及其安装方法
WO2019047149A1 (zh) * 2017-09-08 2019-03-14 深圳前海小有技术有限公司 半导体元件的封装结构及其封装方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025011A (zh) * 2016-07-19 2016-10-12 江西利能低碳科技股份有限公司 Led光源减蓝光方法、led减蓝光光源装置及其安装方法
WO2019047149A1 (zh) * 2017-09-08 2019-03-14 深圳前海小有技术有限公司 半导体元件的封装结构及其封装方法

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Address after: Baoan District Shiyan street Shenzhen city Guangdong province 518000 house community Stone Ring Road 202 wealth B building science and Technology Parks plant 3-5 layer

Patentee after: SHENZHEN LEPOWER OPTO ELECTRONICS CO., LTD.

Address before: 518000, Baoan District, Shiyan City, Guangdong province Shenzhen street community B the Great Wall Road, paddy field industrial zone, 5 floor

Patentee before: Shenzhen Leyond Opto Electronics Co., Ltd.

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Address after: Baoan District Shiyan street Shenzhen city Guangdong province 518000 house community Stone Ring Road 202 chanf Technology Park building B

Patentee after: Shenzhen top lighting technology Co., Ltd.

Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518000 house community Stone Ring Road 202 wealth B building science and Technology Parks plant 3-5 layer

Patentee before: SHENZHEN LEPOWER OPTO ELECTRONICS CO., LTD.

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