CN204966490U - High showing indicates area source - Google Patents
High showing indicates area source Download PDFInfo
- Publication number
- CN204966490U CN204966490U CN201520671648.1U CN201520671648U CN204966490U CN 204966490 U CN204966490 U CN 204966490U CN 201520671648 U CN201520671648 U CN 201520671648U CN 204966490 U CN204966490 U CN 204966490U
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- CN
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- Prior art keywords
- wafer
- led wafer
- area source
- led
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003292 glue Substances 0.000 claims abstract description 54
- 239000004568 cement Substances 0.000 claims abstract description 7
- 238000000926 separation method Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 33
- 241000218202 Coptis Species 0.000 claims description 6
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 238000009877 rendering Methods 0.000 abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 14
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- 239000000741 silica gel Substances 0.000 description 18
- 229910002027 silica gel Inorganic materials 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 150000004645 aluminates Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to a high showing indicates area source, the area source includes base plate, LED wafer, the LED wafer adopts high thermal conductivity insulating cement rigid coupling at the base plate upper surface, is provided with the box dam at LED wafer periphery and glues, and this box dam glue is with the whole encirclements of LED wafer, and in the ring of encirclement that the box dam was glued, it has the fluorescent glue to fill, the fluorescent glue covers the LED wafer is whole, and its height is put down with changeing high that the dam glued mutually, the LED wafer includes blue light wafer, ruddiness wafer, the blue light wafer is provided with 20, ruddiness wafer altogether and is provided with 4 to the diameter is the axis, the both sides of 24 LED wafers separation diameters, and every limit is each 12, and with 5, 4, 3 vertical ranges, wherein two vertical ranges centres of 4 LED wafers are the ruddiness wafer. The utility model discloses high showing indicates area source can improve blue light wafer collocation phosphor powder color rendering index problem on the low side, enlarges the applied place of area source.
Description
Technical field
The utility model relates to LED technology field, relates to a kind of high aobvious finger area source specifically.
Background technology
LED has that volume is little, power consumption is low, long service life, environmental advantages, is more and more widely used in the illumination in each place.The manufacture method of existing white light is blue light wafer collocation fluorescent material, and its color rendering index is at 65-80, and the white-light illuminating product color rendering index that such as place such as museum, the Art Museum needs is greater than 90.
Therefore, how solving the problem is technical problem urgently to be resolved hurrily in the industry.
In the white-light spectrum that blue light wafer collocation fluorescent material is made, red spectrum is fewer, and color rendering index, at 65-80, can not meet the such as ask for something such as museum, Art Museum height aobvious finger place illumination and use.
Utility model content
For deficiency of the prior art, the technical problems to be solved in the utility model there are provided a kind of high aobvious finger area source.
For solving the problems of the technologies described above, the utility model is realized by following scheme: a kind of high aobvious finger area source, described area source comprises substrate, LED wafer, described LED wafer adopts high thermal conductivity insulating cement to be fixed in upper surface of base plate, LED wafer periphery is provided with box dam glue, LED wafer is all surrounded by this box dam glue, in the ring of encirclement of box dam glue, be filled with fluorescent glue, LED wafer all covers by described fluorescent glue, its height is equal with the height turning dam glue, described LED wafer comprises blue light wafer, red wafer, described blue light wafer is provided with 20 altogether, red wafer is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5, 4, 3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer.
Further, described fluorescent glue is:
The aluminates system fluorescent material of Yellow light-emitting low temperature and the mixture of silica gel;
Or the mixture of the Nitride phosphor glowed and silica gel;
Or nitrogen oxide system, with the mixture of silica gel;
Or the silicate of green light and the mixture of silica gel;
Or the LuAG system fluorescent material of green light and the mixture of silica gel;
Or the GaAG system fluorescent material of green light and the mixture of silica gel.
Further, described substrate is square, and the light-emitting area that LED wafer, box dam glue, fluorescent glue are formed is for circular.
Further, described box dam glue is silicon rubber.
Further, described substrate is provided with the positive and negative electrode pad for connecting outer lead, described positive and negative electrode pad is arranged at the corner of substrate.
Further, described LED wafer electrode is connected with the electrode pad on substrate by gold thread, thus realizes the connection of internal and external electrode.
Further, described substrate is aluminium base.
A preparation method for high aobvious finger area source, it is characterized in that, the method comprises the following steps:
1), substrate manufacture, select according to circuit design that to cover metallic plate be substrate, substrate adopts hard printed circuit board or flexible printed circuit board;
2), by the scope of the circuit board setting box dam glue in step 1);
3), in the range areas of box dam glue, setting LED wafer array, makes the electrode of LED wafer be connected with the electrode pad on substrate by gold thread;
LED wafer comprises blue light wafer, red wafer, described blue light wafer is provided with 20 altogether, red wafer is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5,4,3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer;
4), high thermal conductivity insulating cement is adopted to be fixed on substrate by blue light wafer, red wafer;
5), arrange box dam glue, LED wafer is all surrounded by box dam glue;
6), in the scope of box dam glue add fluorescent glue, make fluorescent glue cover all LED wafer, and the height of fluorescent glue is equal with the height of box dam glue.
Further, described fluorescent glue is:
The aluminates system fluorescent material of Yellow light-emitting low temperature and the mixture of silica gel;
Or the mixture of the Nitride phosphor glowed and silica gel;
Or nitrogen oxide system, with the mixture of silica gel;
Or the silicate of green light and the mixture of silica gel;
Or the LuAG system fluorescent material of green light and the mixture of silica gel;
Or the GaAG system fluorescent material of green light and the mixture of silica gel.
Relative to prior art, the beneficial effects of the utility model are: LED wafer is arranged blue light wafer, red wafer by the utility model respectively, blue light wafer is provided with 20 altogether, red wafer is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5,4,3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer.The utility model height is aobvious refers to that area source can improve blue light wafer collocation fluorescent material color rendering index problem on the low side, expands the application places of area source.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the utility model height aobvious finger area source structural representation.
Fig. 2 is the utility model height aobvious finger area source structure vertical view.
Mark in accompanying drawing: substrate 1, LED wafer 2, box dam glue 3, fluorescent glue 4, positive and negative electrode pad 5, red wafer 21, blue light wafer 22.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection range of the present utility model.
Please refer to accompanying drawing 1 ~ 2, a kind of high aobvious finger area source of the present utility model, described area source comprises substrate 1, LED wafer 2, described LED wafer 2 adopts high thermal conductivity insulating cement to be fixed in substrate 1 upper surface, LED wafer 2 periphery is provided with box dam glue 3, LED wafer 2 is all surrounded by this box dam glue 3, in the ring of encirclement of box dam glue 3, be filled with fluorescent glue 4, LED wafer 2 all covers by described fluorescent glue 4, its height is equal with the height turning dam glue 3, described LED wafer 2 comprises blue light wafer 22, red wafer 21, described blue light wafer 22 is provided with 20 altogether, red wafer 21 is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5, 4, 3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer.Described substrate 1 is square, the light-emitting area that LED wafer 2, box dam glue 3, fluorescent glue 4 are formed is for circular, described box dam glue 3 is silicon rubber, described substrate 1 is provided with the positive and negative electrode pad 5 for connecting outer lead, described positive and negative electrode pad 5 is arranged at the corner of substrate, described LED wafer 2 electrode is connected with the electrode pad on substrate by gold thread, thus realizes the connection of internal and external electrode, and described substrate 1 is aluminium base.LED wafer 2 adopts high thermal conductivity insulating cement to be fixed in upper surface of base plate, and LED wafer electrode is connected with the electrode pad on substrate by gold thread, thus realizes the connection of internal and external electrode.In use, pass into operating current, LED wafer just can be luminous, because photoelectric conversion efficiency is low, the heat that wafer produces is dispersed in external environment in time mainly through metal substrate, thus reducing useful life and the reliability that wafer junction temperature ensures light source, the utility model improves blue light wafer collocation fluorescent material color rendering index problem on the low side greatly; Expand the application places of area source.In the white-light spectrum that the utility model height aobvious finger area source blue light wafer collocation fluorescent material is made, red spectrum is many, and color rendering index, more than 90, can meet the such as ask for something such as museum, Art Museum height aobvious finger place illumination completely and use.
Described fluorescent glue 4 is:
The aluminates system fluorescent material of Yellow light-emitting low temperature and the mixture of silica gel;
Or the mixture of the Nitride phosphor glowed and silica gel;
Or nitrogen oxide system, with the mixture of silica gel;
Or the silicate of green light and the mixture of silica gel;
Or the LuAG system fluorescent material of green light and the mixture of silica gel;
Or the GaAG system fluorescent material of green light and the mixture of silica gel.
A preparation method for high aobvious finger area source, it is characterized in that, the method comprises the following steps:
1, substrate 1 makes, and selecting to cover metallic plate according to circuit design is substrate, and substrate 1 adopts hard printed circuit board or flexible printed circuit board;
2, by the scope of the circuit board setting box dam glue 3 in step 1;
3, in the range areas of box dam glue 3, setting LED wafer 2 array, makes the electrode of LED wafer 2 be connected with the electrode pad on substrate 1 by gold thread;
LED wafer 2 comprises blue light wafer 22, red wafer 21, described blue light wafer 22 is provided with 20 altogether, red wafer 21 is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5,4,3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer;
4, adopt high thermal conductivity insulating cement by substrate 1 affixed to blue light wafer 22, red wafer 21;
5, arrange box dam glue 3, LED wafer 2 is all surrounded by box dam glue 3;
6, in the scope of box dam glue 3, add fluorescent glue 4, make fluorescent glue 4 cover all LED wafer 2, and the height of fluorescent glue 4 is equal with the height of box dam glue 3.
The foregoing is only preferred implementation of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present utility model.
Claims (6)
1. one kind high aobvious finger area source, it is characterized in that: described area source comprises substrate (1), LED wafer (2), described LED wafer (2) adopts high thermal conductivity insulating cement to be fixed in substrate (1) upper surface, LED wafer (2) periphery is provided with box dam glue (3), LED wafer (2) is all surrounded by this box dam glue (3), in the ring of encirclement of box dam glue (3), be filled with fluorescent glue (4), LED wafer (2) all covers by described fluorescent glue (4), its height is equal with the height turning dam glue (3), described LED wafer (2) comprises blue light wafer (22), red wafer (21), described blue light wafer (22) is provided with 20 altogether, red wafer (21) is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5, 4, 3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer.
2. a kind of high aobvious finger area source according to claim 1, it is characterized in that: described substrate (1) is square, the light-emitting area that LED wafer (2), box dam glue (3), fluorescent glue (4) are formed is for circular.
3. a kind of high aobvious finger area source according to claim 1, is characterized in that: described box dam glue (3) is silicon rubber.
4. a kind of high aobvious finger area source according to claim 1, is characterized in that: described substrate (1) is provided with the positive and negative electrode pad (5) for connecting outer lead, described positive and negative electrode pad (5) is arranged at the corner of substrate.
5. a kind of high aobvious finger area source according to claim 1, is characterized in that: described LED wafer (2) electrode is connected with the electrode pad on substrate by gold thread, thus realizes the connection of internal and external electrode.
6. a kind of high aobvious finger area source according to claim 1, is characterized in that: described substrate (1) is aluminium base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201520671648.1U CN204966490U (en) | 2015-09-01 | 2015-09-01 | High showing indicates area source |
Applications Claiming Priority (1)
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CN201520671648.1U CN204966490U (en) | 2015-09-01 | 2015-09-01 | High showing indicates area source |
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CN204966490U true CN204966490U (en) | 2016-01-13 |
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CN201520671648.1U Expired - Fee Related CN204966490U (en) | 2015-09-01 | 2015-09-01 | High showing indicates area source |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105118828A (en) * | 2015-09-01 | 2015-12-02 | 宏齐光电子(深圳)有限公司 | High-color-rendering-index area source and preparation method |
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2015
- 2015-09-01 CN CN201520671648.1U patent/CN204966490U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105118828A (en) * | 2015-09-01 | 2015-12-02 | 宏齐光电子(深圳)有限公司 | High-color-rendering-index area source and preparation method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160113 Termination date: 20190901 |
|
CF01 | Termination of patent right due to non-payment of annual fee |