CN204966542U - Area source of miniwatt wafer encapsulation - Google Patents
Area source of miniwatt wafer encapsulation Download PDFInfo
- Publication number
- CN204966542U CN204966542U CN201520671078.6U CN201520671078U CN204966542U CN 204966542 U CN204966542 U CN 204966542U CN 201520671078 U CN201520671078 U CN 201520671078U CN 204966542 U CN204966542 U CN 204966542U
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- CN
- China
- Prior art keywords
- wafer
- led wafer
- area source
- circular groove
- glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005538 encapsulation Methods 0.000 title abstract description 7
- 239000003292 glue Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 241000218202 Coptis Species 0.000 claims abstract description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 8
- 239000004568 cement Substances 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 79
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000004313 glare Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 239000000741 silica gel Substances 0.000 description 12
- 229910002027 silica gel Inorganic materials 0.000 description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 150000004645 aluminates Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses an area source of miniwatt wafer encapsulation, area source include base plate, LED wafer, and the base plate upper surface is provided with circular recess, and circular recess is white flexible glue all around, is provided with the box dam along circular recessed edge and glues, and this box dam glue surrounds circular recess, circular recess upper surface adopts high thermal conductivity insulating cement rigid coupling LED wafer, fills up the fluorescent glue in the circular recess, and the fluorescent glue upper surface is glued the upper surface with the box dam and is put down mutually, and LED wafer blue light LED wafer or purple light LED wafer, LED wafer electrode pass through the gold thread and be connected with the electrode weld pad on the base plate to the connection of outer electrode in realizing. The utility model discloses photochromic mixing uniformity is good between area source of miniwatt wafer encapsulation, its miniwatt wafer, no gold -tinted spot, glare. Because photoelectric conversion efficiency is low, during heat that the wafer produced mainly gives off external environment through the metal substrate in time to reduce the wafer junction temperature and guarantee the life and the reliability of light source.
Description
Technical field
The utility model relates to LED field, relates to a kind of area source of small-power wafer package specifically.
Background technology
Area source has that volume is little, power consumption is low, long service life, environmental advantages, is more and more widely used in the illumination in each place.At present, the chip power selected of encapsulating face light source is between 0.5-1W.This area source, wafer and wafer pitch are from comparatively large, and light mixing is uneven, and have blackening and dazzle, light efficiency is low.
As shown in Figure 1, existing area source, color quality is poor, and have gold-tinted spot, dazzle, light efficiency is low.Therefore, area source of the prior art needs to improve.
Utility model content
For deficiency of the prior art, the technical problems to be solved in the utility model there are provided a kind of area source of small-power wafer package.
For solving the problems of the technologies described above, the utility model is realized by following scheme: a kind of area source of small-power wafer package, described area source comprises substrate, LED wafer, described upper surface of base plate is provided with circular groove, described circular groove surrounding is white flexible glue, circular groove edge is provided with box dam glue, circular groove surrounds by this box dam glue, described circular groove upper surface adopts the affixed LED wafer of high thermal conductivity insulating cement, fluorescent glue is filled up in circular groove, fluorescent glue upper surface is equal with box dam glue upper surface, described LED wafer blue LED wafers or purple LED wafer, LED wafer electrode is connected with the electrode pad on substrate by gold thread, thus realize the connection of internal and external electrode.
Further, the power of described LED wafer is between 0.06 ~ 0.2W.
Further, described substrate is square or circle, and the light-emitting area that described LED wafer, circular groove are formed, for circular, is furnished with the positive and negative electrode pad (5) of circuit for being connected with outer lead on the corner of substrate.
Further, the height of described box dam glue is between 0.5 ~ 1mm.
Further, described circular groove is circular or square.
Further, described fluorescent glue is:
The aluminates system fluorescent material of Yellow light-emitting low temperature and the mixture of silica gel;
Or the mixture of the Nitride systems fluorescent material glowed and silica gel;
Or the mixture of nitrogen oxide system fluorescent material and silica gel;
Or the mixture of the silicate of green light, LuAG, GaAG system fluorescent material and silica gel.
A preparation method for the area source of small-power wafer package, said method comprising the steps of:
1), substrate manufacture, select according to circuit design that to cover metallic plate be substrate, substrate adopts hard printed circuit board or flexible printed circuit board;
2), by the scope of the circuit board setting box dam glue in step 1);
3), in the scope of this box dam glue set circular groove, this circular groove is light face, has the effect of reverberation;
4), on circular groove surface, setting LED wafer array, the electrode of LED wafer is connected with the electrode pad on substrate by gold thread, LED wafer comprises blue light wafer, red wafer, and described blue light wafer is provided with 20 altogether, red wafer is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5,4,3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer;
5), high thermal conductivity insulating cement is adopted to be fixed on substrate by blue light wafer, red wafer;
6), arrange box dam glue, LED wafer is all surrounded by box dam glue;
7), in the scope of box dam glue add fluorescent glue, make fluorescent glue cover all LED wafer, and the height of fluorescent glue is equal with the height of box dam glue.
Further, described fluorescent glue is:
The aluminates system fluorescent material of Yellow light-emitting low temperature and the mixture of silica gel;
Or the mixture of the Nitride systems fluorescent material glowed and silica gel;
Or the mixture of nitrogen oxide system fluorescent material and silica gel;
Or the mixture of the silicate of green light, LuAG, GaAG system fluorescent material and silica gel.
Relative to prior art, the beneficial effects of the utility model are: the area source of the utility model small-power wafer package, and between its small-power wafer, photochromic mixing uniformity is good, without gold-tinted spot, dazzle.The area source of 0.5-1W power die encapsulation, light efficiency is between 80-100LM/W; The area source of 0.06-0.2W power die encapsulation, light efficiency can reach 110-130LM/W.The utility model LED wafer electrode is connected with the electrode pad on substrate by gold thread, thus realizes the connection of internal and external electrode.In use, pass into operating current, LED wafer just can be luminous, because photoelectric conversion efficiency is low, the heat that wafer produces is dispersed in external environment in time mainly through metal substrate, thus reduces useful life and reliability that wafer junction temperature ensures light source.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is area source structural representation of the prior art.
Fig. 2 is area source structural representation of the present utility model.
Mark in accompanying drawing:
Substrate 1, circular groove 2, box dam glue 3, LED wafer 4, positive and negative electrode pad 5.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection range of the present utility model.
Please refer to accompanying drawing 1 ~ 2, the area source of a kind of small-power wafer package of the present utility model, described area source comprises substrate 1, LED wafer 4, described substrate 1 upper surface is provided with circular groove 2, described circular groove 2 surrounding is white flexible glue, circular groove 2 edge is provided with box dam glue 3, circular groove 2 surrounds by this box dam glue 3, described circular groove 2 upper surface adopts the affixed LED wafer 4 of high thermal conductivity insulating cement, fluorescent glue is filled up in circular groove 2, fluorescent glue upper surface is equal with box dam glue 3 upper surface, described LED wafer blue LED wafers or purple LED wafer, LED wafer 4 electrode is connected with the electrode pad on substrate 1 by gold thread, thus realize the connection of internal and external electrode.The power of described LED wafer 4 is between 0.06 ~ 0.2W, described substrate 1 is square or circle, the light-emitting area that described LED wafer 4, circular groove 2 are formed is for circular, the positive and negative electrode pad 5 of circuit for being connected with outer lead is furnished with on the corner of substrate 1, the height of described box dam glue 3 is between 0.5 ~ 1mm, and described circular groove 2 is circular or square, the area source of the utility model small-power wafer package, between its small-power wafer, photochromic mixing uniformity is good, without gold-tinted spot, dazzle.The area source of 0.5-1W power die encapsulation, light efficiency is between 80-100LM/W; The area source of 0.06-0.2W power die encapsulation, light efficiency can reach 110-130LM/W.The utility model LED wafer electrode is connected with the electrode pad on substrate by gold thread, thus realizes the connection of internal and external electrode.In use, pass into operating current, LED wafer just can be luminous, because photoelectric conversion efficiency is low, the heat that wafer produces is dispersed in external environment in time mainly through metal substrate, thus reduces useful life and reliability that wafer junction temperature ensures light source.
Described fluorescent glue is:
The aluminates system fluorescent material of Yellow light-emitting low temperature and the mixture of silica gel;
Or the mixture of the Nitride systems fluorescent material glowed and silica gel;
Or the mixture of nitrogen oxide system fluorescent material and silica gel;
Or the mixture of the silicate of green light, LuAG, GaAG system fluorescent material and silica gel.
A preparation method for the area source of small-power wafer package, said method comprising the steps of:
1, substrate 1 makes, and selecting to cover metallic plate according to circuit design is substrate, and substrate 1 adopts hard printed circuit board or flexible printed circuit board;
2, by the scope of the circuit board setting box dam glue 3 in step 1;
3, in the scope of this box dam glue 3, set circular groove 2, this circular groove 2, in light face, has the effect of reverberation;
4, on circular groove 2 surface, setting LED wafer 4 array, the electrode of LED wafer 4 is connected with the electrode pad on substrate 1 by gold thread, LED wafer 4 comprises blue light wafer, red wafer, and described blue light wafer is provided with 20 altogether, red wafer is provided with 4, take diameter as axis, the both sides of 24 LED wafer separation diameters, each 12 of every limit, with 5,4,3 vertical array, wherein middle two of the vertical array of 4 LED wafer is red wafer;
5, adopt high thermal conductivity insulating cement by substrate 1 affixed to blue light wafer, red wafer;
6, arrange box dam glue 3, LED wafer 4 is all surrounded by box dam glue 3;
7, in the scope of box dam glue 3, add fluorescent glue, make fluorescent glue cover all LED wafer 4, and the height of fluorescent glue is equal with the height of box dam glue.
The foregoing is only preferred implementation of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present utility model.
Claims (5)
1. the area source of a small-power wafer package, it is characterized in that: described area source comprises substrate (1), LED wafer (4), described substrate (1) upper surface is provided with circular groove (2), described circular groove (2) surrounding is white flexible glue, circular groove (2) edge is provided with box dam glue (3), circular groove (2) surrounds by this box dam glue (3), described circular groove (2) upper surface adopts the affixed LED wafer of high thermal conductivity insulating cement (4), circular groove fills up fluorescent glue in (2), fluorescent glue upper surface is equal with box dam glue (3) upper surface, described LED wafer blue LED wafers or purple LED wafer, LED wafer (4) electrode is connected with the electrode pad on substrate (1) by gold thread, thus realize the connection of internal and external electrode.
2. the area source of a kind of small-power wafer package according to claim 1, is characterized in that: the power of described LED wafer (4) is between 0.06 ~ 0.2W.
3. the area source of a kind of small-power wafer package according to claim 1, it is characterized in that: described substrate (1) is square or circle, the light-emitting area that described LED wafer (4), circular groove (2) are formed, for circular, is furnished with the positive and negative electrode pad (5) of circuit for being connected with outer lead on the corner of substrate (1).
4. the area source of a kind of small-power wafer package according to claim 1, is characterized in that: the height of described box dam glue (3) is between 0.5 ~ 1mm.
5. the area source of a kind of small-power wafer package according to claim 1, is characterized in that: described circular groove (2) is for circular or square.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520671078.6U CN204966542U (en) | 2015-09-01 | 2015-09-01 | Area source of miniwatt wafer encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520671078.6U CN204966542U (en) | 2015-09-01 | 2015-09-01 | Area source of miniwatt wafer encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204966542U true CN204966542U (en) | 2016-01-13 |
Family
ID=55061584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520671078.6U Expired - Fee Related CN204966542U (en) | 2015-09-01 | 2015-09-01 | Area source of miniwatt wafer encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204966542U (en) |
-
2015
- 2015-09-01 CN CN201520671078.6U patent/CN204966542U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160113 Termination date: 20190901 |