CN204834662U - Low LED epitaxial structure that absorbs - Google Patents
Low LED epitaxial structure that absorbs Download PDFInfo
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- CN204834662U CN204834662U CN201520528077.6U CN201520528077U CN204834662U CN 204834662 U CN204834662 U CN 204834662U CN 201520528077 U CN201520528077 U CN 201520528077U CN 204834662 U CN204834662 U CN 204834662U
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Abstract
The utility model provides a low LED epitaxial structure that absorbs, low LED epitaxial structure that absorbs follows and upwards includes in proper order down: the substrate, N type gaN layer, MQW active layer, P type layer, the P type layer from the bottom up include in proper order: P type electron barrier layer, P type gaN layer, P type inGaN contacts the layer, wherein, the thickness value range on P type layer is 50nm-100nm. The utility model discloses a low LED epitaxial structure that absorbs, the thickness value range on its P type layer falls for 50nm-100nm, has reduced P type layer to the light absorption to the luminous luminance of LED chip improves, simultaneously, because old LED epitaxial wafer manufacturing process is compared to P type layer thickness attenuate, its single stove growth time reduces, and the productivity promotes more than 10%.
Description
Technical field
The utility model relates to technical field of semiconductor luminescence, particularly relates to a kind of low absorption LED epitaxial structure.
Background technology
Light-emitting diode (Light-EmittingDiode, LED), as a kind of efficient, environmental protection and green New Solid lighting source, has that volume is little, lightweight, the life-span is long, reliability is high and use the advantages such as low in energy consumption, makes it be able to extensive use.Especially, along with the fast development of LED industry, LED is more and more higher at the application proportion of lighting field.Along with high-power LED chip is in lighting field extensive use, require to grow with each passing day to high-power LED chip luminous efficiency.
The thickness of traditional its P-type layer of LED chip is generally at 200nm ~ 300nm, and therefore, its illumination effect is unsatisfactory.
Summary of the invention
The purpose of this utility model is to provide a kind of low absorption LED epitaxial structure.
To achieve these goals, the utility model one execution mode provides a kind of low absorption LED epitaxial structure, and described low absorption LED epitaxial structure comprises from bottom to top successively:
Substrate, N-type GaN layer, MQW active layer, P-type layer;
Described P-type layer comprises from top to bottom successively: P-type electron barrier layer, P type GaN layer, P type InGaN contact layer;
Wherein, the Thickness scope of described P-type layer is 50nm ~ 100nm.
As the further improvement of present embodiment, the thickness of described P-type layer is 65nm.
As the further improvement of present embodiment, the Thickness scope of described P-type electron barrier layer is: 30nm ~ 60nm, and the Thickness scope of described P type GaN layer is: 15nm ~ 30nm, and the Thickness scope of described P type InGaN contact layer is: 5nm ~ 10nm.
As the further improvement of present embodiment, described P-type electron barrier layer, P type GaN layer, the Thickness Ratio of P type InGaN contact layer is 8:4:1.
As the further improvement of present embodiment, described P-type electron barrier layer, P type GaN layer, the thickness of P type InGaN contact layer is respectively 40nm, 20nm, 5nm.
As the further improvement of present embodiment, described P-type electron barrier layer is P type superlattice GaN/p-InAlGaN electronic barrier layer, and the Thickness Ratio of described GaN and InAlGaN is 1:2.
Compared with prior art, the beneficial effects of the utility model are: low absorption LED epitaxial structure of the present utility model, and the Thickness scope of its P-type layer reduces to 50nm ~ 100nm, reduces the absorption of P-type layer to light, thus improve the luminosity of LED chip; Meanwhile, due to P-type layer reduced thickness, compare old LED manufacturing process, its single stove growth time reduces, and production capacity promotes more than 10%.
Accompanying drawing explanation
Fig. 1 is the structural representation of low absorption LED epitaxial structure in the utility model one execution mode;
Fig. 2 is the structural representation of low absorption LED epitaxial structure in another execution mode of the utility model;
Fig. 3 is the schematic flow sheet of the preparation method of low absorption LED epitaxial structure in the utility model one execution mode.
Embodiment
Below with reference to embodiment shown in the drawings, the utility model is described in detail.But these execution modes do not limit the utility model, the structure that those of ordinary skill in the art makes according to these execution modes, method or conversion functionally are all included in protection range of the present utility model.
As shown in Figure 1, the low absorption LED epitaxial structure that the utility model provides, low absorption LED epitaxial structure comprises from bottom to top successively: substrate 10, N-type GaN layer 20, MQW active layer 30, P-type layer 40.
In the utility model one execution mode, the material of substrate 10 is Sapphire Substrate, and certainly, in other execution modes of the present utility model, substrate 10 can be also other backing materials, as Si, SiC etc.
In the utility model one execution mode, N-type GaN layer 20 is high temperature N-type GaN layer.
In the utility model one execution mode, MQW active layer 30 is multiple quantum well light emitting layer.
The Thickness scope of P-type layer 40 of the present utility model is 50nm ~ 100nm.In the utility model preferred implementation, the thickness of P-type layer 40 is 65nm.
In the concrete example of the utility model, P-type layer 40 comprises from top to bottom successively: P-type electron barrier layer 41, P type GaN layer 42, P type InGaN contact layer 43.
Wherein, the Thickness scope of P-type electron barrier layer 41 is: the Thickness scope of 30nm ~ 60nm, P type GaN layer 42 is: the Thickness scope of 15nm ~ 30nm, P type InGaN contact layer 43 is: 5nm ~ 10nm.
In the utility model one preferred implementation, the Thickness Ratio of P-type electron barrier layer 41, P type GaN layer 42, P type InGaN contact layer 43 is 8:4:1.
In the utility model one preferred implementation, the thickness of P-type electron barrier layer 41, P type GaN layer 42, P type InGaN contact layer 43 is respectively 40nm, 20nm, 5nm.
In the concrete example of the utility model one, P-type electron barrier layer 41 is P type superlattice GaN/p-InAlGaN electronic barrier layer, and the Thickness Ratio of described GaN and InAlGaN is 1:2.
In the utility model one execution mode, P type GaN layer 42 is high temperature P type GaN layer.
In the utility model one execution mode, P type InGaN contact layer 43 is high concentration Mg doped p-type InGaN contact layer, and wherein, Mg atomic dopant concentration is greater than 1E21cm
-3.
In above-mentioned execution mode, the Thickness scope of described P-type layer is reduced to 50nm ~ 100nm, reduce the absorption of described P-type layer to light, thus improve the luminosity of LED chip.
As shown in Figure 2, on the basis of low absorption LED epitaxial structure shown in Fig. 1, in the utility model one execution mode, described low absorption LED epitaxial structure also comprises: be grown on the nucleating layer 51 between substrate 10 and N-type GaN layer 20.
Wherein, nucleating layer 51 is low temperature GaN nucleating layer preferably, and using TMGa as Ga source.
As shown in Fig. 2, Fig. 1 low absorption LED epitaxial structure basis on, in the utility model one execution mode, described low absorption LED epitaxial structure also comprises: be grown on the nitride buffer layer 52 between substrate 10 and N-type GaN layer 20.
Nitride buffer layer 52 can be GaN resilient coating or AlN resilient coating; Certainly, in other execution modes of the present utility model, the low temperature GaN buffer grown under the high temperature GaN resilient coating that GaN resilient coating grows under can also comprising hot conditions and cryogenic conditions, is not described in detail at this.
As shown in Figure 2, on the basis of low absorption LED epitaxial structure shown in Fig. 1, in the utility model one execution mode, described low absorption LED epitaxial structure also comprises: be grown on the involuntary doped gan layer 53 between substrate 10 and N-type GaN layer 20.
Certainly, in other execution modes of the present utility model, above-mentioned nucleating layer 51, nitride buffer layer 52, involuntary doped gan layer 53 can also combination in any join in low absorption LED epitaxial structure, such as: low absorption LED epitaxial structure comprises from bottom to top successively: substrate 10, nucleating layer 51, nitride buffer layer 52, involuntary doped gan layer 53, N-type GaN layer 20, MQW active layer 30, P-type layer 40, be not described in detail at this.
Shown in composition graphs 3, in the utility model one execution mode, disclose a kind of preparation method of low absorption LED epitaxial structure, described method comprises:
S1, provide a substrate;
S2, over the substrate growth N-type GaN layer;
S3, in described N-type GaN layer, grow MQW active layer;
S4, on described MQW active layer growing P-type layer;
Described step S4 specifically comprises:
S41, on described MQW active layer growing P-type electronic barrier layer;
S42, in described P-type electron barrier layer growth P-type GaN layer;
S42, in described P type GaN layer P type InGaN contact layer.
Wherein, the Thickness scope of described P-type layer is 50nm ~ 100nm.
In the utility model preferred implementation, the thickness of described P-type layer is 65nm.
In the concrete example of the utility model, the Thickness scope of described P-type electron barrier layer is: 30nm ~ 60nm, and the Thickness scope of described P type GaN layer is: 15nm ~ 30nm, and the Thickness scope of described P type InGaN contact layer is: 5nm ~ 10nm.
In the utility model one preferred implementation, described P-type electron barrier layer, described P type GaN layer, the Thickness Ratio of described P type InGaN contact layer is 8:4:1.
In the utility model one preferred implementation, described P-type electron barrier layer, P type GaN layer, the thickness of P type InGaN contact layer is respectively 40nm, 20nm, 5nm.
In the concrete example of the utility model one, described P-type electron barrier layer is P type superlattice GaN/p-InAlGaN electronic barrier layer, and the Thickness Ratio of described GaN and InAlGaN is 1:2.
In the utility model one execution mode, described P type GaN layer is high temperature P type GaN layer.
In the utility model one execution mode, described P type InGaN contact layer is high concentration Mg doped p-type InGaN contact layer, and wherein, Mg atomic dopant concentration is greater than 1E21cm
-3.
In the utility model one execution mode, after described step S1, described method also comprises:
S51, grow into stratum nucleare over the substrate;
S52, on described nucleating layer growing nitride resilient coating;
S53, on described nitride buffer layer, grow involuntary doped gan layer;
Certainly, in the utility model one execution mode, described step S51, all right combination in any of S52, S53:
Such as: after described step S1, described method also comprises: S51, grow into stratum nucleare over the substrate;
Or S52, over the substrate growing nitride resilient coating;
Or S53, grow involuntary doped gan layer over the substrate, be not described in detail at this.
It should be noted that, the concrete component of the substrate prepared by said method, nucleating layer, nitride buffer layer, involuntary doped gan layer, N-type GaN layer, MQW active layer, P-type layer with reference to aforementioned low absorption LED epitaxial structure, can be described in detail at this.
Below in conjunction with embodiment, the utility model is described in further detail.
In the present embodiment, the preparation method of low absorption LED epitaxial structure specifically comprises:
M1, provide a substrate;
Described substrate is Sapphire Substrate, anneals in hydrogen atmosphere, and clean sapphire substrate surface, temperature controls, between 1050-1100 DEG C, then to carry out nitrogen treatment 1-3min.
M2, grow into stratum nucleare over the substrate;
Temperature dropped between 500 ~ 550 DEG C, grow the low temperature GaN nucleating layer that 15 ~ 25nm is thick over the substrate, growth pressure controls at 600mbar, V/III mol ratio between 80 ~ 120, and using TMGa as Ga source.
M3, on described nucleating layer, grow into nitride buffer layer;
Described nucleating layer carries out in-situ annealing process, and growth thickness is the high temperature GaN resilient coating between 0.5-1um.
M4, on described nitride buffer layer, grow involuntary doped gan layer;
Described nitride buffer layer grows involuntary doped high temperature u-GaN layer.
M5, in described involuntary doped gan layer, grow N-type GaN layer;
M6, in described N-type GaN layer, grow MQW active layer;
In present embodiment, on N-type GaN layer, growth multiple quantum well light emitting layer.
M7, on described MQW active layer growing P-type electronic barrier layer;
In present embodiment, growing P-type superlattice GaN/p-InAlGaN electronic barrier layer on described MQW active layer, its growth temperature controls at 760 DEG C ~ 820 DEG C, the thickness of the P type superlattice GaN/p-InAlGaN electronic barrier layer grown is 40nm, wherein, the Thickness Ratio of described GaN and InAlGaN is 1:2.
M8, in described P-type electron barrier layer growth P-type GaN layer;
In present embodiment, growth P-type GaN layer in described P-type electron barrier layer, its growth temperature controls at 930 DEG C ~ 960 DEG C, and the thickness of the P type GaN layer grown is 20nm.
M9, in described P type GaN layer P type InGaN contact layer.
In present embodiment, P type InGaN contact layer in described P type GaN layer, its growth temperature controls at 890 DEG C ~ 930 DEG C, and the thickness of the P type InGaN contact layer grown is 5nm, and wherein, in its growing environment, Mg atomic dopant concentration is greater than 1E21cm
-3.
Above-mentioned execution mode is only a preferred implementation, in other execution modes of the present utility model, the thickness of described P-type layer, P-type electron barrier layer in P-type layer, P type GaN layer, the thickness accounting etc. of P type InGaN contact layer all can be set to other numerical value according to demand, repeats no longer further at this.
Shown in associative list 1,
In the utility model execution mode and prior art, two kinds of structures adopt identical chips processing procedures, (drive current 150mA) tests under identical testing conditions, wherein, sample A is the low absorption LED epitaxial structure of prior art, and sample B is the low absorption LED epitaxial structure of the utility model execution mode.
As shown in Table 1, in present embodiment, the luminosity (LOP) of low absorption LED epitaxial structure promotes 3.3mW(1.5% compared with the luminosity (LOP) of absorption LED epitaxial structure low in prior art).
In sum, low absorption LED epitaxial structure of the present utility model and preparation method thereof, the Thickness scope of its P-type layer reduces to 50nm ~ 100nm, reduces the absorption of P-type layer to light, thus improves the luminosity of LED chip; Meanwhile, due to P-type layer reduced thickness, compare old LED manufacturing process, its single stove growth time reduces, and production capacity promotes more than 10%.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, technical scheme in each execution mode also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility execution mode of the present utility model; they are also not used to limit protection range of the present utility model, all do not depart from the utility model skill equivalent implementations of doing of spirit or change all should be included within protection range of the present utility model.
Claims (6)
1. a low absorption LED epitaxial structure, is characterized in that, described low absorption LED epitaxial structure comprises from bottom to top successively:
Substrate, N-type GaN layer, MQW active layer, P-type layer;
Described P-type layer comprises from top to bottom successively: P-type electron barrier layer, P type GaN layer, P type InGaN contact layer;
Wherein, the Thickness scope of described P-type layer is 50nm ~ 100nm.
2. low absorption LED epitaxial structure according to claim 1, is characterized in that, the thickness of described P-type layer is 65nm.
3. low absorption LED epitaxial structure according to claim 1, it is characterized in that, the Thickness scope of described P-type electron barrier layer is: 30nm ~ 60nm, the Thickness scope of described P type GaN layer is: 15nm ~ 30nm, and the Thickness scope of described P type InGaN contact layer is: 5nm ~ 10nm.
4. low absorption LED epitaxial structure according to claim 3, is characterized in that, described P-type electron barrier layer, P type GaN layer, and the Thickness Ratio of P type InGaN contact layer is 8:4:1.
5. low absorption LED epitaxial structure according to claim 4, is characterized in that, described P-type electron barrier layer, P type GaN layer, and the thickness of P type InGaN contact layer is respectively 40nm, 20nm, 5nm.
6. low absorption LED epitaxial structure according to claim 1, is characterized in that, described P-type electron barrier layer is P type superlattice GaN/p-InAlGaN electronic barrier layer, and the Thickness Ratio of described GaN and InAlGaN is 1:2.
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| CN105023978A (en) * | 2015-07-20 | 2015-11-04 | 聚灿光电科技股份有限公司 | Low-absorption LED epitaxial structure and preparing method thereof |
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| CN105023978A (en) * | 2015-07-20 | 2015-11-04 | 聚灿光电科技股份有限公司 | Low-absorption LED epitaxial structure and preparing method thereof |
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