CN204424316U - 一种大功率led驱动芯片的sop8封装引线框架 - Google Patents

一种大功率led驱动芯片的sop8封装引线框架 Download PDF

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CN204424316U
CN204424316U CN201520054888.7U CN201520054888U CN204424316U CN 204424316 U CN204424316 U CN 204424316U CN 201520054888 U CN201520054888 U CN 201520054888U CN 204424316 U CN204424316 U CN 204424316U
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姜喆
姜英伟
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Guangzhou Microtronics Of China AS
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Abstract

本实用新型公开了一种大功率LED驱动芯片的SOP8封装引线框架，包括引脚、侧连筋、第一基岛和第二基岛，1个引脚与2个侧连筋共同支撑起第一基岛及第二基岛，第一基岛的宽度尺寸比SOP8封装基岛的标准宽度尺寸大，第二基岛的宽度尺寸比SOP8封装基岛的标准宽度尺寸小。本实用新型增加了第一基岛最大承载的MOSFET芯片尺寸，除了适用于3-9W内置隔离式LED驱动芯片的封装外，也适用于12-24W内置隔离式的LED驱动芯片，适用范围广；相应扩大了第一基岛的承载面积，散热性能好；对MOSFET芯片无特别要求，成本较低；只需占用1个引脚，扩展性较好。本实用新型可广泛应用于半导体器件领域。

Description

一种大功率LED驱动芯片的SOP8封装引线框架
技术领域
本实用新型涉及半导体器件领域，尤其是一种大功率LED驱动芯片的SOP8封装引线框架。
背景技术
SOP8的封装是一种非常普及的小型贴片式形式,它被目前的半导体芯片封装所普遍采用。SOP8封装形式只是DIP8封装形式的占用面积的2/5,而且,PCB板焊接时,SOP8封装这一贴片式封装有着DIP8插入式封装无以比拟的优势和效率。SOP8封装形式与DIP8封装形式的关键尺寸简要对比图如图1所示。
内置隔离式的LED驱动芯片需要把一个IC控制芯片和一个耐压650V的MOSFET芯片封装在一个SOP8或一个DIP8的封装形式内，功率越大的LED驱动芯片须要封入的MOSFET芯片的开启阻抗(Rdson)就越低，MOSFET芯片的开启阻抗越低也就意味芯片的面积就越大。
如图2和图3所示，现有的SOP8封装引线框架采用了两个对等的双基岛式设计，由于承载MOSFET芯片的基岛2及3的尺寸为2.77x2.05mm（2.05mm即为SOP8封装基岛的标准宽度尺寸），再加上粘片的银胶在贴片时式的四面溢出宽度通常至少为5mil(即0.125mm),因此留给MOSFET芯片的宽度尺寸为1.80mm。目前业界的3-9W内置隔离式的LED驱动芯片通常采用1N65NC系列的VDMOSFET芯片，这个系列的芯片尺寸在1.80x1.80mm的尺寸范围内，没有超出1.80mm的宽度尺寸，因此目前3-9W小功率内置隔离式的LED驱动芯片均采用SOP8的封装形式。但是，12-15W内置隔离式的LED驱动芯片须要采用一个2N65NC或3N65NC的VDMOSFET芯片，这两种芯片的尺寸通常为2x2mm或2.3x2.1mm，均超出了1.80mm的宽度尺寸，已不再适合采用SOP8的封装形式。
正是基于以上尺寸的限制，目前SOP8的封装形式通常只用于3-9W内置隔离式LED驱动芯片的封装，适用范围较窄。另外，从散热的角度考虑，承载体的面积越小其吸热也越小，因此封装后的VDMOSFET芯片的温升也会增加。为了解决这个问题，也有人提出采用COOLMOS的芯片来替代VDMOSFET芯片来解决这个问题。在同样的开启阻抗条件下，COOLMOS的芯片会比VDMOSFET芯片的面积小。但是，由于目前国内COOLMOS的工艺还不太成熟，生产厂家很少而且价格也高了许多。因此从成本角度考虑，采用COOLMOS的LED驱动芯片目前尚无有力的竞争力。
再者，现有内置隔离式LED驱动芯片的SOP8引线框架采用了两个相邻的引脚1、一个侧连筋4与基岛2相连来做支撑（如图2所示），这样使SOP8的封装形式的有效引脚数减少为6，减少了2个有效引脚，不利于LED驱动芯片的功能性扩展。
综上所述，目前业内亟需一种适用范围广、散热效果好、成本低和扩展性好的SOP8封装引线框架。
实用新型内容
为了解决上述技术问题，本实用新型的目的是：提供一种适用范围广、散热效果好、成本低和扩展性好的，大功率LED驱动芯片的SOP8封装引线框架。
本实用新型解决其技术问题所采用的技术方案是：
一种大功率LED驱动芯片的SOP8封装引线框架，包括引脚、侧连筋、用于承载MOSFET芯片的第一基岛和用于承载IC控制芯片的第二基岛，所述1个引脚与2个侧连筋共同支撑起第一基岛及第二基岛，所述第一基岛的宽度尺寸比SOP8封装基岛的标准宽度尺寸大，所述第二基岛的宽度尺寸比SOP8封装基岛的标准宽度尺寸小。
进一步，所述第一基岛的宽度尺寸为2.355mm，所述第二基岛的宽度尺寸为1.1700mm。
进一步，所述引脚、第一基岛及第二基岛均设置有用于在塑封固化后起固定作用的塑封锁孔。
进一步，在所述第一基岛与MOSFET芯片之间、第二基岛与IC控制芯片之间均设置有银胶层。
进一步，所述MOSFET芯片为VDMOSFET芯片或COOLMOSFET芯片。
本实用新型的有益效果是：把现有两个相同尺寸的独立基岛改为第一基岛和第二基岛这两个大小不一的独立基岛，第一基岛的宽度尺寸比SOP8封装基岛的标准宽度尺寸大，增加了第一基岛最大承载的MOSFET芯片尺寸，除了适用于3-9W内置隔离式LED驱动芯片的封装外，也适用于12-24W内置隔离式的LED驱动芯片，适用范围广；第一基岛的宽度尺寸的增加也相应扩大了第一基岛的承载面积，有利于MOSFET芯片的散热，有效地降低了封装后MOSFET芯片的温升，散热性能好；对MOSFET芯片无特别要求，可以沿用传统的VDMOSFET芯片工艺，成本较低；通过1个引脚与2个侧连筋共同支撑起第一基岛及第二基岛，只需占用1个引脚，使得SOP8的封装形式的有效引脚数由传统的6个增加为7个，有利于LED驱动芯片的功能性扩展，扩展性较好。进一步，引脚、第一基岛及第二基岛均设置有用于在塑封固化后起固定作用的塑封锁孔，能在塑封固化后将引脚、第一基岛及第二基岛牢牢锁住，避免了在封装的切筋成型工序中，因成型模具异常产生额外的拉拔力造成引脚、第一基岛或第二基岛的表面与塑封料之间产生分层。
附图说明
下面结合附图和实施例对本实用新型作进一步说明。
图1为SOP8封装形式与DIP8封装形式的关键尺寸简要对比图；
图2为现有的SOP8封装引线框架示意图；
图3为现有SOP8封装的焊线示意图；
图4为本实用新型一种大功率LED驱动芯片的SOP8封装引线框架示意图；
图5为本实用新型SOP8封装引线框架的焊线示意图；
图6为采用本实用新型引线框架的SOP8产品塑封后的局部剖面图。
附图标记：1、引脚；2、第一基岛；3、第二基岛；4、侧连筋；5、塑封锁孔；6、银胶层；7、焊线；8、芯片；9、塑封料；10、IC控制芯片；11、MOSFET芯片。
具体实施方式
参照图4和图5，一种大功率LED驱动芯片的SOP8封装引线框架，包括引脚1、侧连筋4、用于承载MOSFET芯片11的第一基岛2和用于承载IC控制芯片10的第二基岛3，所述1个引脚1与2个侧连筋4共同支撑起第一基岛2及第二基岛3，所述第一基岛2的宽度尺寸比SOP8封装基岛的标准宽度尺寸大，所述第二基岛3的宽度尺寸比SOP8封装基岛的标准宽度尺寸小。
其中，SOP8封装基岛的标准宽度尺寸为2.05mm。
进一步作为优选的实施方式，所述第一基岛2的宽度尺寸为2.355mm，所述第二基岛3的宽度尺寸为1.1700mm。
参照图4和图5，进一步作为优选的实施方式，所述引脚1、第一基岛2及第二基岛3均设置有用于在塑封固化后起固定作用的塑封锁孔5。
参照图6，进一步作为优选的实施方式，在所述第一基岛2与MOSFET芯片之间、第二基岛3与IC控制芯片之间均设置有银胶层6。
进一步作为优选的实施方式，所述MOSFET芯片11为VDMOSFET芯片或COOLMOSFET芯片。
其中,VDMOSFET芯片为1-3N VDMOSFET芯片，COOLMOSFET芯片为3-6N COOLMOSFET。如果内置的MOSFET芯片为1-3N VDMOSFET芯片，则该LED驱动芯片的功率可以达到12W-15W；如果能内置的MOSFET芯片为3-6N COOLMOSFET芯片，则该LED驱动芯片的功率可以达到12-24W。
下面结合说明书附图和具体实施例对本实用新型作进一步详细说明。
实施例一
参照图4、图5和图6，本实用新型的第一实施例：
本实用新型的SOP8引线框架把现有两个相同尺寸的独立基岛改为大小不一的的两个独立基岛：将其中的大基岛（即第一基岛2）的宽度尺寸由原先的2.05mm变为2.335mm,从而使得其最大承载的MOSFET芯片尺寸达到了2.1mm左右。因此用于12-15W的1-3N 650V耐压的VDMOSFET芯片或12-24W的3-6N耐压650V的COOLMOSFET芯片也就可以放入本实用新型的引线框架进行封装，解决了传统SOP8的封装不适用于大功率内置隔离式LED驱动芯片的封装这一问题。第一基岛2宽度尺寸的增大，也意味着其所能承载的最大MOSFET芯片面积也由原先的5.68mm2扩大到6.47mm2,其最大承载面积大约扩大了14%，这样也有利于扩大MOSFE芯片的散热，有效地降低了封装后MOSFE芯片的温升。
本实用新型的引线框架在IC控制芯片10的基岛设计上也作了改进，通过采用一个引脚1和一个侧连筋4来支撑IC芯片的第二基岛3，从而把SOP8的封装形式的有效引脚数由6增加为7，这为以后大功率LED驱动芯片的功能扩展提供了空间。
此外，参照图6（图中的8是MOSFET芯片11和IC控制芯片10的统称），本实用新型的引线框架与现有的引线框架相比，不仅为每一个独立的引脚上增加了一个塑封锁孔5，而且为第一基岛2和第二基岛3也增加了塑封锁孔5。带有塑封锁孔5的引线框架在塑封工序进行塑封固化后，固化的塑封材料会通过框架上的塑封锁孔5连通，这样就会把引脚1、第一基岛2和第二基岛3牢牢锁住，从而增加封装的可靠性和产品的可靠性。当产品在封装制程的切筋成型工序时，机械成型过程会对产品引脚进行拉伸，本实用新型引入了塑封锁孔5，增加了引脚1的固定性，避免了因成型模具异常产生额外的拉拔力而造成引脚表面与塑封料之间产生分层的可能性，从而为产品的封装提供更好的可靠性。
与现有技术相比，本实用新型把现有两个相同尺寸的独立基岛改为第一基岛和第二基岛这两个大小不一的独立基岛，第一基岛的宽度尺寸比SOP8封装基岛的标准宽度尺寸大，增加了第一基岛最大承载的MOSFET芯片尺寸，除了适用于3-9W内置隔离式LED驱动芯片的封装外，也适用于12-24W内置隔离式的LED驱动芯片，适用范围广；第一基岛的宽度尺寸的增加也相应扩大了第一基岛的承载面积，有利于MOSFET芯片的散热，有效地降低了封装后MOSFET芯片的温升，散热性能好；对MOSFET芯片无特别要求，可以沿用传统的VDMOSFET芯片工艺，成本较低；通过1个引脚与2个侧连筋共同支撑起第一基岛及第二基岛，只需占用1个引脚，使得SOP8的封装形式的有效引脚数由传统的6个增加为7个，有利于LED驱动芯片的功能性扩展，扩展性较好。此外，本实用新型的引脚、第一基岛及第二基岛均设置有用于在塑封固化后起固定作用的塑封锁孔，能在塑封固化后将引脚、第一基岛及第二基岛牢牢锁住，避免了在封装的切筋成型工序中，因成型模具异常产生额外的拉拔力造成引脚、第一基岛或第二基岛的表面与塑封料之间产生分层。
以上是对本实用新型的较佳实施进行了具体说明，但本实用新型创造并不限于所述实施例，熟悉本领域的技术人员在不违背本实用新型精神的前提下还可做作出种种的等同变形或替换，这些等同的变形或替换均包含在本申请权利要求所限定的范围内。

Claims (5)

1.一种大功率LED驱动芯片的SOP8封装引线框架，其特征在于：包括引脚（1）、侧连筋（4）、用于承载MOSFET芯片（11）的第一基岛（2）和用于承载IC控制芯片（10）的第二基岛（3），所述1个引脚（1）与2个侧连筋（4）共同支撑起第一基岛（2）及第二基岛（3），所述第一基岛（2）的宽度尺寸比SOP8封装基岛的标准宽度尺寸大，所述第二基岛（3）的宽度尺寸比SOP8封装基岛的标准宽度尺寸小。
2.根据权利要求1所述的一种大功率LED驱动芯片的SOP8封装引线框架，其特征在于：所述第一基岛（2）的宽度尺寸为2.355mm，所述第二基岛（3）的宽度尺寸为1.1700mm。
3.根据权利要求1所述的一种大功率LED驱动芯片的SOP8封装引线框架，其特征在于：所述引脚（1）、第一基岛（2）及第二基岛（3）均设置有用于在塑封固化后起固定作用的塑封锁孔（5）。
4.根据权利要求1所述的一种大功率LED驱动芯片的SOP8封装引线框架，其特征在于：在所述第一基岛（2）与MOSFET芯片之间、第二基岛（3）与IC控制芯片之间均设置有银胶层（6）。
5.根据权利要求1所述的一种大功率LED驱动芯片的SOP8封装引线框架，其特征在于：所述MOSFET芯片（11）为VDMOSFET芯片或COOLMOSFET芯片。
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CN104766920A (zh) * 2015-01-26 2015-07-08 广州华微电子有限公司 一种大功率led驱动芯片的sop8封装引线框架

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104766920A (zh) * 2015-01-26 2015-07-08 广州华微电子有限公司 一种大功率led驱动芯片的sop8封装引线框架

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