CN204391097U - A kind of anti-rosin joint chip diode - Google Patents
A kind of anti-rosin joint chip diode Download PDFInfo
- Publication number
- CN204391097U CN204391097U CN201420815696.9U CN201420815696U CN204391097U CN 204391097 U CN204391097 U CN 204391097U CN 201420815696 U CN201420815696 U CN 201420815696U CN 204391097 U CN204391097 U CN 204391097U
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- CN
- China
- Prior art keywords
- pad
- conducting strip
- rosin joint
- connecting line
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The utility model discloses a kind of anti-rosin joint chip diode, comprise silicon wafer chip, described silicon wafer chip two ends are respectively equipped with the first conducting strip and the second conducting strip, described first conducting strip is connected with the first pad by connecting line, described second conducting strip is connected with the second pad by connecting line, described connecting line, described first conducting strip, resin glue is provided with outside described second conducting strip and described silicon wafer chip, be provided with every sheet tin between described first pad and described second pad, described every sheet tin than described first pad and the second pad thick, described first pad and described second pad are provided with some solder joints.The utility model has with low cost, the simple feature of production technology, greatly can reduce the risk of short circuit during welding, can also avoid the situation occurring rosin joint when welding diode, reduce the complexity of debugging problem circuit board, bring facility to debugging.
Description
[technical field]
The utility model relates to microelectronic component field, especially a kind of chip diode of anti-rosin joint.
[background technology]
Diode is a kind of semiconductor subassembly, multiplexly at first makes indicator light, display panel etc., and the appearance along with white light LEDs is also used as illumination.And SMD diode small volume, the paster close together of two legs, when welding, the tin cream on both sides easily adheres to together, and then causes diode breakdown or short circuit, causes whole circuit board cisco unity malfunction; Also often there is the situation of rosin joint in existing diode, when this makes to debug the finished circuit board gone wrong, workload is huge when welding; Tin cream is too much on the surface because sticking to diode chip for backlight unit, and causes assemble with paster Ji Dao afterwards that thickness is thicker, and fastness between diode chip for backlight unit with paster base island is relative poor.
[summary of the invention]
The purpose of this utility model is for above technical deficiency, provides a kind of anti-rosin joint chip diode.
The technical solution of the utility model is as described below:
A kind of anti-rosin joint chip diode, comprise silicon wafer chip, it is characterized in that, described silicon wafer chip two ends are respectively equipped with the first conducting strip and the second conducting strip, described first conducting strip is connected with the first pad by connecting line, described second conducting strip is connected with the second pad by connecting line, described connecting line, described first conducting strip, resin glue is provided with outside described second conducting strip and described silicon wafer chip, be provided with every sheet tin between described first pad and described second pad, described every sheet tin than described first pad and the second pad thick, described first pad and described second pad are provided with some solder joints.
Solder joint on solder joint on described first pad and described second pad is asymmetric distribution.
Describedly to be formed from a resin every sheet tin.
Further, described resin glue and described every sheet tin be integral type structure.
Described every sheet tin than described first pad and the thick 0.1-0.3mm of described second pad.
Further, the solder joint on the solder joint on described first pad and described second pad respectively has three, and distribution all triangular in shape.
Further, the solder joint on the solder joint on described first pad and described second pad respectively has four, and the distribution that all assumes diamond in shape.
Further, described every sheet tin be inverted " V " font.
Based on technique scheme the utility model compared with prior art, its beneficial effect is: the utility model has with low cost, the simple feature of production technology, and when sheet tin can reduce welding greatly, both sides tin cream dissolves each other and the risk of short circuit; During welding, tin cream contacts equal conducting with contact pads or with solder joint, occurs the situation of rosin joint when avoiding welding diode, reduces the complexity of debugging problem circuit board, brings facility to debugging.
[accompanying drawing explanation]
Fig. 1 is structural representation of the present utility model;
Fig. 2 is pad structure schematic diagram in the utility model embodiment;
Fig. 3 is pad structure schematic diagram in the utility model embodiment.
In the drawings, 1, silicon wafer chip; 2, resin glue; 31, the first conducting strip; 32, the second conducting strip; 4, connecting line; 5, the first pad; 52, the second pad; 6, every sheet tin; 7, solder joint.
[embodiment]
Below in conjunction with accompanying drawing and implementation process, this method is described further.
As shown in Figure 1, the utility model provides a kind of anti-rosin joint chip diode.This diode mainly comprises silicon wafer chip, conducting strip, pad and resin glue.
Embodiment one
Silicon wafer chip 1 two ends connect the first conducting strip 31 and the second conducting strip 32 respectively, first conducting strip 31 is connected with the first pad 51 by connecting line 4, second conducting strip 32 is connected with the second pad 52 by connecting line 4, resin glue 2 is provided with outside connecting line 4, first conducting strip 31, second conducting strip 32 and silicon wafer chip 1, first pad 51 and the second pad 52 are provided with some solder joints 7, solder joint on solder joint on first pad and the second pad respectively has three, and in asymmetrical Triangle-Profile, be inverted " V " font every sheet tin.
Embodiment two
Silicon wafer chip 1 two ends connect the first conducting strip 31 and the second conducting strip 32 respectively, first conducting strip 31 is connected with the first pad 51 by connecting line 4, second conducting strip 32 is connected with the second pad 52 by connecting line 4, resin glue 2 is provided with outside connecting line 4, first conducting strip 31, second conducting strip 32 and silicon wafer chip 1, first pad 51 and the second pad 52 are provided with some solder joints 7, solder joint on solder joint on first pad and the second pad respectively has four, and in asymmetrical rhombus distribution, be inverted " V " font every sheet tin.
Be provided with every sheet tin 6 between first pad 51 and the second pad 52, every sheet tin 6 than weldering first pad 51 and the second pad 52 thick.
Preferably be formed from a resin every sheet tin 6, resin glue 2 be integral type structure every sheet tin 6.
In order to reach good insulating effect, every sheet tin 6 0.1-0.3mm thicker in pad 5, now, when can make welding, the tin cream of both sides can not dissolve each other, and decreases the risk of short circuit.
Should be understood that, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection range that all should belong to the utility model claims.
By reference to the accompanying drawings exemplary description is carried out to the utility model patent above; the realization of obvious the utility model patent is not subject to the restrictions described above; as long as have employed the various improvement that method is conceived and technical scheme is carried out of the utility model patent; or the design of the utility model patent and technical scheme directly applied to other occasion, all in protection range of the present utility model without to improve.
Claims (8)
1. an anti-rosin joint chip diode, comprise silicon wafer chip, it is characterized in that, described silicon wafer chip two ends are respectively equipped with the first conducting strip and the second conducting strip, described first conducting strip is connected with the first pad by connecting line, described second conducting strip is connected with the second pad by connecting line, described connecting line, described first conducting strip, resin glue is provided with outside described second conducting strip and described silicon wafer chip, be provided with every sheet tin between described first pad and described second pad, described every sheet tin than described first pad and the second pad thick, described first pad and described second pad are provided with some solder joints.
2. the anti-rosin joint chip diode of one according to claim 1, is characterized in that, the solder joint on the solder joint on described first pad and described second pad is asymmetric distribution.
3. the anti-rosin joint chip diode of one according to claim 1, is characterized in that, is describedly formed from a resin every sheet tin.
4. the anti-rosin joint chip diode of one according to claim 3, is characterized in that, described resin glue and described every sheet tin be integral type structure.
5. the anti-rosin joint chip diode of one according to claim 1, is characterized in that, described every sheet tin than described first pad and the thick 0.1-0.3mm of described second pad.
6. the anti-rosin joint chip diode of one according to claim 1, is characterized in that, the solder joint on the solder joint on described first pad and described second pad respectively has three, and distribution all triangular in shape.
7. the anti-rosin joint chip diode of one according to claim 1, is characterized in that, the solder joint on the solder joint on described first pad and described second pad respectively has four, and the distribution that all assumes diamond in shape.
8. the anti-rosin joint chip diode of the one according to claim 6 or 7, is characterized in that, described every sheet tin be inverted " V " font.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420815696.9U CN204391097U (en) | 2014-12-22 | 2014-12-22 | A kind of anti-rosin joint chip diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420815696.9U CN204391097U (en) | 2014-12-22 | 2014-12-22 | A kind of anti-rosin joint chip diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204391097U true CN204391097U (en) | 2015-06-10 |
Family
ID=53363794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420815696.9U Active CN204391097U (en) | 2014-12-22 | 2014-12-22 | A kind of anti-rosin joint chip diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204391097U (en) |
-
2014
- 2014-12-22 CN CN201420815696.9U patent/CN204391097U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |