CN204316818U - A kind of LED protection system of logic-based protection emitter-base bandgap grading manifold type amplifying circuit - Google Patents
A kind of LED protection system of logic-based protection emitter-base bandgap grading manifold type amplifying circuit Download PDFInfo
- Publication number
- CN204316818U CN204316818U CN201420736518.7U CN201420736518U CN204316818U CN 204316818 U CN204316818 U CN 204316818U CN 201420736518 U CN201420736518 U CN 201420736518U CN 204316818 U CN204316818 U CN 204316818U
- Authority
- CN
- China
- Prior art keywords
- resistance
- transistor
- pin
- emitter
- driving chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
Landscapes
- Amplifiers (AREA)
Abstract
The utility model discloses the LED protection system of a kind of logic-based protection emitter-base bandgap grading manifold type amplifying circuit, primarily of transformer T, driving chip M, be serially connected with the switched current source between the VCC pin of driving chip M and INP pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, and base stage is connected with the TG pin of driving chip M, collector electrode in turn after electric capacity C4 and electric capacity C5 ground connection and the transistor Q4 of grounded emitter form; It is characterized in that, between the VCC pin and BOOST pin of driving chip M, be also serially connected with virtual protection emitter-base bandgap grading manifold type amplifying circuit.The utility model not only has the function of short-circuit protection, overvoltage protection and open-circuit-protection, and its power consumption is lower, is only 1/4 of conventional gate drive circuit start-up time its start-up time.
Description
Technical field
The utility model relates to a kind of LED drive circuit, specifically refers to the LED protection system of a kind of logic-based protection emitter-base bandgap grading manifold type amplifying circuit.
Background technology
At present, because LED has, energy consumption is low, the feature such as long service life and safety and environmental protection, and it has become one of main product of people's life lighting.Because LED is different from traditional incandescent lamp, therefore its needs are driven by special drive circuit.But, the widely used gate driver circuit of current people due to the irrationality of its project organization, defects such as result in current gate driver circuit and have that energy consumption is higher, current noise comparatively large and start-up time is longer.
Utility model content
The purpose of this utility model is the defect that energy consumption is higher, current noise is comparatively large and start-up time is longer overcoming the existence of current gate driver circuit; a kind of reasonable in design is provided; can effectively reduce energy consumption and current noise, obviously shorten the LED protection system of a kind of logic-based protection emitter-base bandgap grading manifold type amplifying circuit of start-up time.
The purpose of this utility model is achieved through the following technical solutions: a kind of LED protection system of logic-based protection emitter-base bandgap grading manifold type amplifying circuit, primarily of transformer T, driving chip M, be serially connected with the switched current source between the VCC pin of driving chip M and INP pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, and base stage is connected with the TG pin of driving chip M, collector electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, and the transistor Q4 of grounded emitter forms, the Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter of transistor Q4, meanwhile, the emitter of transistor Q4 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
Meanwhile, between the VCC pin and BOOST pin of driving chip M, virtual protection emitter-base bandgap grading manifold type amplifying circuit is also serially connected with, described virtual protection emitter-base bandgap grading manifold type amplifying circuit is primarily of triode Q5, triode Q6, power amplifier P1, power amplifier P2, be serially connected in the resistance R9 between the negative input of power amplifier P1 and output, be serially connected in the polar capacitor C8 between the electrode input end of power amplifier P2 and output, be serially connected in the resistance R8 between the electrode input end of power amplifier P1 and the collector electrode of triode Q5, be serially connected in the resistance R10 between the collector electrode of triode Q5 and the base stage of triode Q6, the electric capacity C7 be in parallel with resistance R10, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C6 that positive pole is connected with the emitter of triode Q5 after resistance R11, be serially connected in the resistance R12 between the base stage of triode Q6 and the positive pole of polar capacitor C6, positive pole is connected with the emitter of triode Q6, negative pole is in turn through electric capacity C9 that voltage stabilizing didoe D1 is connected with the output of power amplifier P1 after resistance R13, P pole is connected with the output of power amplifier P2, the diode D2 that N pole is connected with the tie point of resistance R13 with voltage stabilizing didoe D1 after resistance R14 through resistance R15, and P pole is connected with the negative pole of electric capacity C9, the voltage stabilizing didoe D3 that N pole is connected with the tie point of resistance R15 with diode D2 forms, the base stage of described triode Q5 is connected with the positive pole of polar capacitor C6, and its emitter is connected with the emitter of triode Q6, and its collector electrode is connected with the negative input of power amplifier P1, the collector electrode of triode Q6 is connected with the negative input of power amplifier P2, and the electrode input end of power amplifier P2 is connected with the output of power amplifier P1, the positive pole of described polar capacitor C6 is connected with the VCC pin of driving chip M, and resistance R15 is then connected with the BOOST pin of driving chip M with the tie point of resistance R14.
Described switched current source is by transistor Q1, transistor Q2, transistor Q3, DC power supply S, be serially connected in the resistance R1 between the collector electrode of transistor Q1 and the collector electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter of transistor Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of DC power supply S, the resistance R5 in parallel with DC power supply S-phase, be serially connected in the resistance R6 between the emitter of transistor Q3 and the negative pole of DC power supply S, be serially connected in the resistance R4 between the collector electrode of transistor Q3 and the collector electrode of transistor Q2, and positive pole is connected with the collector electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of DC power supply S forms, the base stage of described transistor Q2 is also connected with the collector electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of DC power supply S with the emitter of transistor Q2 respectively, the VCC pin of described driving chip M is connected with the positive pole of polar capacitor C2, and the INP pin of driving chip M is then connected with the negative pole of polar capacitor C2.
For guaranteeing result of use, described driving chip M preferentially adopts LTC4440A integrated chip to realize.
The utility model comparatively prior art is compared, and has the following advantages and beneficial effect:
(1) the utility model not only has the function of short-circuit protection, overvoltage protection and open-circuit-protection, and its power consumption is lower, is only 1/4 of conventional gate drive circuit start-up time its start-up time.
(2) the utility model is provided with the switched current source carried, and therefore effectively can avoid external electromagnetic interference, meanwhile, can reduce current noise significantly.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present utility model.
Fig. 2 is virtual protection emitter-base bandgap grading manifold type amplification circuit structure schematic diagram of the present utility model.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
Embodiment
As shown in Figure 1, the utility model is made up of transistor Q4, transformer T, driving chip M, switched current source, virtual protection emitter-base bandgap grading manifold type amplifying circuit, electric capacity C3, resistance R7, electric capacity C4 and electric capacity C5.During connection; switched current source needs to be serially connected with between the VCC pin of driving chip M and INP pin; virtual protection emitter-base bandgap grading manifold type amplifying circuit is then serially connected with between the VCC pin of driving chip M and BOOST pin; electric capacity C3 is serially connected with between the BOOST pin of driving chip M and TG pin, and resistance R7 is then serially connected with between the TG pin of driving chip M and TS pin.
The base stage of described transistor Q4 is connected with the TG pin of driving chip M, and its collector electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, its grounded emitter.Meanwhile, the collector electrode of this transistor Q4 also needs the driving voltage of external+6V, to guarantee that transistor Q4 can normally run.
Wherein, the Same Name of Ends of the primary coil of transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter of transistor Q4.Meanwhile, the emitter of transistor Q4 is also connected with the TS pin of driving chip M.
The secondary coil of transformer T is provided with tap Y1 and tap Y2, namely by this tap Y1 and tap Y2, the utility model is formed with 4 outputs, the i.e. Same Name of Ends of secondary coil on the secondary coil of transformer T, the non-same polarity of Y1 tap, Y2 tap and secondary coil.
Switched current source is used for providing working power to driving chip M, it is by transistor Q1, transistor Q2, transistor Q3, DC power supply S, be serially connected in the resistance R1 between the collector electrode of transistor Q1 and the collector electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter of transistor Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of DC power supply S, the resistance R5 in parallel with DC power supply S-phase, be serially connected in the resistance R6 between the emitter of transistor Q3 and the negative pole of DC power supply S, be serially connected in the resistance R4 between the collector electrode of transistor Q3 and the collector electrode of transistor Q2, and positive pole is connected with the collector electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of DC power supply S forms.
Meanwhile, the base stage of this transistor Q2 is also connected with the collector electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of DC power supply S with the emitter of transistor Q2 respectively; The VCC pin of described driving chip M is connected with the positive pole of polar capacitor C2, and the INP pin of driving chip M is then connected with the negative pole of polar capacitor C2.
Described RC filter circuit is then formed in parallel by resistance R3 and electric capacity C1, and namely after resistance R3 and electric capacity C1 parallel connection, an one common port is connected with the emitter of transistor Q1, its another common port is then connected with the negative pole of DC power supply S.
The structure of described virtual protection emitter-base bandgap grading manifold type amplifying circuit as shown in Figure 2, it is primarily of triode Q5, triode Q6, power amplifier P1, power amplifier P2, be serially connected in the resistance R9 between the negative input of power amplifier P1 and output, be serially connected in the polar capacitor C8 between the electrode input end of power amplifier P2 and output, be serially connected in the resistance R8 between the electrode input end of power amplifier P1 and the collector electrode of triode Q5, be serially connected in the resistance R10 between the collector electrode of triode Q5 and the base stage of triode Q6, the electric capacity C7 be in parallel with resistance R10, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C6 that positive pole is connected with the emitter of triode Q5 after resistance R11, be serially connected in the resistance R12 between the base stage of triode Q6 and the positive pole of polar capacitor C6, positive pole is connected with the emitter of triode Q6, negative pole is in turn through electric capacity C9 that voltage stabilizing didoe D1 is connected with the output of power amplifier P1 after resistance R13, P pole is connected with the output of power amplifier P2, the diode D2 that N pole is connected with the tie point of resistance R13 with voltage stabilizing didoe D1 after resistance R14 through resistance R15, and P pole is connected with the negative pole of electric capacity C9, the voltage stabilizing didoe D3 that N pole is connected with the tie point of resistance R15 with diode D2 forms.
During connection, the base stage of described triode Q5 is connected with the positive pole of polar capacitor C6, and its emitter is connected with the emitter of triode Q6, and its collector electrode is connected with the negative input of power amplifier P1; The collector electrode of triode Q6 is connected with the negative input of power amplifier P2, and the electrode input end of power amplifier P2 is connected with the output of power amplifier P1.
Meanwhile, the positive pole of described polar capacitor C6 is connected with the VCC pin of driving chip M, and resistance R15 is then connected with the BOOST pin of driving chip M with the tie point of resistance R14
For guaranteeing result of use, the high-frequency N channel mosfet grid drive chip that this driving chip M preferentially adopts Linear Techn Inc. to produce, i.e. LTC4440A integrated chip.This driving chip can with the input voltage work up to 80V, up to can continuous operation during 100V transient state.
As mentioned above, just the utility model can well be realized.
Claims (3)
1. the LED protection system of a logic-based protection emitter-base bandgap grading manifold type amplifying circuit, primarily of transformer T, driving chip M, be serially connected with the switched current source between the VCC pin of driving chip M and INP pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, and base stage is connected with the TG pin of driving chip M, collector electrode in turn after electric capacity C4 and electric capacity C5 ground connection and the transistor Q4 of grounded emitter form, the Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter of transistor Q4, simultaneously, the emitter of transistor Q4 is also connected with the TS pin of driving chip M, the secondary coil of described transformer T is provided with tap Y1 and tap Y2, it is characterized in that, is also serially connected with virtual protection emitter-base bandgap grading manifold type amplifying circuit between the VCC pin and BOOST pin of driving chip M, described virtual protection emitter-base bandgap grading manifold type amplifying circuit is primarily of triode Q5, triode Q6, power amplifier P1, power amplifier P2, be serially connected in the resistance R9 between the negative input of power amplifier P1 and output, be serially connected in the polar capacitor C8 between the electrode input end of power amplifier P2 and output, be serially connected in the resistance R8 between the electrode input end of power amplifier P1 and the collector electrode of triode Q5, be serially connected in the resistance R10 between the collector electrode of triode Q5 and the base stage of triode Q6, the electric capacity C7 be in parallel with resistance R10, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C6 that positive pole is connected with the emitter of triode Q5 after resistance R11, be serially connected in the resistance R12 between the base stage of triode Q6 and the positive pole of polar capacitor C6, positive pole is connected with the emitter of triode Q6, negative pole is in turn through electric capacity C9 that voltage stabilizing didoe D1 is connected with the output of power amplifier P1 after resistance R13, P pole is connected with the output of power amplifier P2, the diode D2 that N pole is connected with the tie point of resistance R13 with voltage stabilizing didoe D1 after resistance R14 through resistance R15, and P pole is connected with the negative pole of electric capacity C9, the voltage stabilizing didoe D3 that N pole is connected with the tie point of resistance R15 with diode D2 forms, the base stage of described triode Q5 is connected with the positive pole of polar capacitor C6, and its emitter is connected with the emitter of triode Q6, and its collector electrode is connected with the negative input of power amplifier P1, the collector electrode of triode Q6 is connected with the negative input of power amplifier P2, and the electrode input end of power amplifier P2 is connected with the output of power amplifier P1, the positive pole of described polar capacitor C6 is connected with the VCC pin of driving chip M, and resistance R15 is then connected with the BOOST pin of driving chip M with the tie point of resistance R14.
2. the LED protection system of a kind of logic-based protection emitter-base bandgap grading manifold type amplifying circuit according to claim 1, it is characterized in that, described switched current source is by transistor Q1, transistor Q2, transistor Q3, DC power supply S, be serially connected in the resistance R1 between the collector electrode of transistor Q1 and the collector electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter of transistor Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of DC power supply S, the resistance R5 in parallel with DC power supply S-phase, be serially connected in the resistance R6 between the emitter of transistor Q3 and the negative pole of DC power supply S, be serially connected in the resistance R4 between the collector electrode of transistor Q3 and the collector electrode of transistor Q2, and positive pole is connected with the collector electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of DC power supply S forms, the base stage of described transistor Q2 is also connected with the collector electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of DC power supply S with the emitter of transistor Q2 respectively, the VCC pin of described driving chip M is connected with the positive pole of polar capacitor C2, and the INP pin of driving chip M is then connected with the negative pole of polar capacitor C2.
3. the LED protection system of a kind of logic-based protection emitter-base bandgap grading manifold type amplifying circuit according to claim 1 and 2, it is characterized in that, described driving chip M is LTC4440A integrated chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420736518.7U CN204316818U (en) | 2014-11-28 | 2014-11-28 | A kind of LED protection system of logic-based protection emitter-base bandgap grading manifold type amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420736518.7U CN204316818U (en) | 2014-11-28 | 2014-11-28 | A kind of LED protection system of logic-based protection emitter-base bandgap grading manifold type amplifying circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204316818U true CN204316818U (en) | 2015-05-06 |
Family
ID=53139112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420736518.7U Expired - Fee Related CN204316818U (en) | 2014-11-28 | 2014-11-28 | A kind of LED protection system of logic-based protection emitter-base bandgap grading manifold type amplifying circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204316818U (en) |
-
2014
- 2014-11-28 CN CN201420736518.7U patent/CN204316818U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104394627A (en) | Light beam excitation type switch power amplifying circuit based gate drive system | |
| CN204316818U (en) | A kind of LED protection system of logic-based protection emitter-base bandgap grading manifold type amplifying circuit | |
| CN104470088A (en) | Grid drive system for LED lamp protection system | |
| CN204316811U (en) | A kind of raster data model system of logic-based protection amplifying circuit | |
| CN204335051U (en) | A kind of raster data model system based on beam excitation and virtual protection formula | |
| CN204305404U (en) | Based on the raster data model system of beam excitation formula switch power amplifying circuit | |
| CN104540267A (en) | LED lamp protection system based on logic protection emitter-coupled amplifying circuit | |
| CN104485804A (en) | Novel logic protection emitter coupling type gate driving system | |
| CN204316789U (en) | A kind of self-locking optical excitation raster data model system based on power amplification | |
| CN104853505A (en) | Energy-saving power amplification type grid driving system based on gate driving | |
| CN204316774U (en) | A kind of novel blue light LED raster data model system | |
| CN104470105A (en) | Logic protection amplifying grid drive system based on bootstrap circuit | |
| CN204316788U (en) | A kind of LED protection system raster data model system | |
| CN204316312U (en) | A kind of raster data model system based on switch power amplifying circuit | |
| CN104486868A (en) | Power amplification type grid electrode driving system | |
| CN104411049A (en) | Novel gate drive system for blue LED lamps | |
| CN204316313U (en) | A kind of new logic protection emitter-base bandgap grading manifold type raster data model system | |
| CN104411056A (en) | Gate drive system based on logic protection amplifying circuit | |
| CN204335037U (en) | A kind of virtual protection amplifying type raster data model system based on boostrap circuit | |
| CN204335046U (en) | A kind of mixed type raster data model system of logic-based protection manifold type amplifying circuit | |
| CN204335045U (en) | A kind of homophase AC signal amplifying type raster data model system of logic-based protection emitter-base bandgap grading manifold type | |
| CN204335053U (en) | A kind of mixed type raster data model system | |
| CN204316796U (en) | A kind of energy-saving power amplification formula raster data model system | |
| CN204316804U (en) | A kind of novel grid drive system | |
| CN204316791U (en) | A kind of power amplification formula raster data model system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Feng Zuqiang Inventor before: Gao Xiaoying Inventor before: Che Rongjun |
|
| COR | Change of bibliographic data | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20151225 Address after: 528421 Guangdong city in Zhongshan Province town of Tongyi Industrial Park Fulin Street No. 8, C building fifth layer 2 Patentee after: BOJO Lighting International Co., Ltd. Address before: 610000, 8 South Street, Chengdu hi tech Zone, Sichuan Patentee before: Chengdu Cuopu Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150506 Termination date: 20201128 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |