CN204305404U - Based on the raster data model system of beam excitation formula switch power amplifying circuit - Google Patents

Based on the raster data model system of beam excitation formula switch power amplifying circuit Download PDF

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Publication number
CN204305404U
CN204305404U CN201420717141.0U CN201420717141U CN204305404U CN 204305404 U CN204305404 U CN 204305404U CN 201420717141 U CN201420717141 U CN 201420717141U CN 204305404 U CN204305404 U CN 204305404U
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power amplifier
resistance
transistor
driving chip
pin
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CN201420717141.0U
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Chinese (zh)
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谢静
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Chengdu Chuangtu Technology Co Ltd
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Chengdu Chuangtu Technology Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40Control techniques providing energy savings, e.g. smart controller or presence detection

Abstract

The utility model discloses the raster data model system based on beam excitation formula switch power amplifying circuit, primarily of switched current source, transformer T, driving chip M, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, the switch power amplifying circuit be serially connected with between switched current source and driving chip M forms, it is characterized in that, beam excitation formula logic amplifying circuit is also serially connected with between switched current source and driving chip M.The utility model not only has the function of short-circuit protection, overvoltage protection and open-circuit-protection, and its power consumption is lower, is only 1/4 of conventional gate drive circuit start-up time its start-up time.Meanwhile, the utility model is provided with switch power amplifying circuit, therefore can guarantee that the power signal in input queued switches chip M can not produce decay, and then guarantees overall stable performance.

Description

Based on the raster data model system of beam excitation formula switch power amplifying circuit
Technical field
The utility model relates to a kind of LED drive circuit, specifically refers to the raster data model system based on beam excitation formula switch power amplifying circuit.
Background technology
At present, because LED has, energy consumption is low, the feature such as long service life and safety and environmental protection, and it has become one of main product of people's life lighting.Because LED is different from traditional incandescent lamp, therefore its needs are driven by special drive circuit.But, the widely used gate driver circuit of current people due to the irrationality of its project organization, defects such as result in current gate driver circuit and have that energy consumption is higher, current noise comparatively large and start-up time is longer.
Utility model content
The purpose of this utility model is the defect that energy consumption is higher, current noise is comparatively large and start-up time is longer overcoming the existence of current gate driver circuit, a kind of reasonable in design is provided, can effectively reduce energy consumption and current noise, obviously shorten the raster data model system based on beam excitation formula switch power amplifying circuit of start-up time.
The purpose of this utility model is achieved through the following technical solutions: based on the raster data model system of beam excitation formula switch power amplifying circuit, primarily of switched current source, transformer T, driving chip M, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, be serially connected with the switch power amplifying circuit between switched current source and driving chip M, and base stage is connected with the TG pin of driving chip M, colelctor electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, and the transistor Q4 of grounded emitter forms.Meanwhile, between switched current source and driving chip M, be also serially connected with beam excitation formula logic amplifying circuit, this beam excitation formula logic amplifying circuit is primarily of power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C11 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C11, the resistance R17 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R17, the polar capacitor C13 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R18 that the other end is connected with the electrode input end of power amplifier P4, be serially connected in the resistance R19 between the negative input of power amplifier P4 and output, one end is connected with the output of NAND gate IC1, the resistance R20 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C12 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C13, the resistance R21 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P4, and its output is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the output of power amplifier P4, and its output is then connected with the TD pin of driving chip M, and the electrode input end of power amplifier P4 is then connected with switched current source.
Described switch power amplifying circuit is then by power amplifier P1, power amplifier P2, power amplifier P3, be serially connected in the resistance R9 between the output of power amplifier P1 and negative input and electric capacity C6, be serially connected in the resistance R10 between the output of power amplifier P2 and electrode input end and electric capacity C7, base stage is connected with the output of power amplifier P1, the triode Q5 that colelctor electrode is connected with the electrode input end of power amplifier P3 after resistance R11, base stage is connected with the emitter stage of triode Q5, the triode Q6 that colelctor electrode is connected with the negative input of power amplifier P3 after resistance R12, base stage is connected with the output of power amplifier P2 after resistance R14, the triode Q7 that colelctor electrode is connected with the base stage of triode Q6 after resistance R13, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter stage of triode Q6 and the electric capacity C8 of ground connection, the electric capacity C9 be in parallel with resistance R14, one end is connected with the base stage of triode Q7, the resistance R15 of the external-4V voltage of the other end, one end is connected with the emitter stage of triode Q7, the resistance R16 of the external-4V voltage of the other end, the electric capacity C10 be in parallel with resistance R16, and N pole is connected with the colelctor electrode of triode Q5, the diode D2 of the extremely external-4V voltage of P forms, the negative input of described power amplifier P1 is connected with the electrode input end of power amplifier P2, the output of power amplifier P3 is connected with the VCC pin of driving chip M, the colelctor electrode of triode Q7 is connected with the INP pin of driving chip M, and the electrode input end of power amplifier P1 is then all connected with switched current source with the negative input of power amplifier P2.
Further, the Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter stage of transistor Q4; Meanwhile, the emitter stage of transistor Q4 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
Described switched current source is by transistor Q1, transistor Q2, transistor Q3, dc source S, be serially connected in the resistance R1 between the colelctor electrode of transistor Q1 and the colelctor electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter stage of transistor Q1 and the negative pole of dc source S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of dc source S, the resistance R5 in parallel with dc source S-phase, be serially connected in the resistance R6 between the emitter stage of transistor Q3 and the negative pole of dc source S, be serially connected in the resistance R4 between the colelctor electrode of transistor Q3 and the colelctor electrode of transistor Q2, and positive pole is connected with the colelctor electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of dc source S forms, the base stage of described transistor Q2 is also connected with the colelctor electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of dc source S with the emitter stage of transistor Q2 respectively, the positive pole of described polar capacitor C2 is connected with the electrode input end of power amplifier P1, and its negative pole is then connected with the negative input of power amplifier P2, the electrode input end of described power amplifier P4 is then connected with the negative pole of dc source S.
For guaranteeing result of use of the present utility model, described driving chip M preferentially adopts LTC4440A integrated chip to realize.
The utility model comparatively prior art is compared, and has the following advantages and beneficial effect:
(1) the utility model not only has the function of short-circuit protection, overvoltage protection and open-circuit-protection, and its power consumption is lower, is only 1/4 of conventional gate drive circuit start-up time its start-up time.
(2) the utility model is provided with the switched current source carried, and therefore effectively can avoid external electromagnetic interference, meanwhile, can reduce current noise significantly.
(3) the utility model is provided with switch power amplifying circuit, therefore can guarantee that the power signal in input queued switches chip M can not produce decay, and then guarantees overall stable performance.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present utility model.
Detailed description of the invention
Below in conjunction with embodiment, the utility model is described in further detail, but embodiment of the present utility model is not limited thereto.
Embodiment
As shown in Figure 1, the utility model is made up of transistor Q4, transformer T, driving chip M, switched current source, diode D1, electric capacity C3, resistance R7, electric capacity C4, electric capacity C5, switch power amplifying circuit and beam excitation formula logic amplifying circuit.
Wherein, this beam excitation formula logic amplifying circuit is primarily of power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C11 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C11, the resistance R17 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R17, the polar capacitor C13 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R18 that the other end is connected with the electrode input end of power amplifier P4, be serially connected in the resistance R19 between the negative input of power amplifier P4 and output, one end is connected with the output of NAND gate IC1, the resistance R20 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C12 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C13, the resistance R21 that the other end is connected with the negative input of NAND gate IC2 forms.
The electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P4, and its output is connected with the electrode input end of NAND gate IC2; The electrode input end of NAND gate IC3 is connected with the output of power amplifier P4.
The output of described switched current source needs to be connected with the input of switch power amplifying circuit, and the output of switch power amplifying circuit then needs to be connected with driving chip M.Described diode D1 is serially connected with between the VCC pin of driving chip M and BOOST pin, to guarantee that its foreign current can not cause damage to driving chip M when transformer T damages.Electric capacity C3 is serially connected with between the BOOST pin of driving chip M and TG pin, and resistance R7 is then serially connected with between the TG pin of driving chip M and TS pin.
The base stage of described transistor Q4 is connected with the TG pin of driving chip M, and its colelctor electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, its grounded emitter.Meanwhile, the colelctor electrode of this transistor Q4 also needs the driving voltage of external+6V, to guarantee that transistor Q4 can normally run.Meanwhile, the output of described NAND gate IC3 also needs to be connected with the TD pin of driving chip M.
The Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter stage of transistor Q4.Meanwhile, the emitter stage of transistor Q4 is also connected with the TS pin of driving chip M.
The secondary coil of transformer T is provided with tap Y1 and tap Y2, namely by this tap Y1 and tap Y2, the utility model is formed with 4 outputs, the i.e. Same Name of Ends of secondary coil on the secondary coil of transformer T, the non-same polarity of Y1 tap, Y2 tap and secondary coil.
Described switch power amplifying circuit, primarily of power amplifier P1, power amplifier P2, power amplifier P3, triode Q5, triode Q6, triode Q7, be serially connected in the one-level RC filter circuit between the output of power amplifier P1 and negative input, be serially connected in the secondary RC filter circuit between the output of power amplifier P2 and electrode input end, and resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, electric capacity C8, electric capacity C9, electric capacity C10 and diode D2 form.
Wherein, described one-level RC filtered electrical routing resistance R9 and electric capacity C6 is formed in parallel, namely between resistance R9 and the electric capacity C6 negative input that is all serially connected in power amplifier P1 and output; Described secondary RC filter circuit is then formed in parallel by resistance R10 and electric capacity C7, namely between resistance R10 and the electric capacity C7 electrode input end that is all serially connected in power amplifier P2 and output.Meanwhile, the negative input of power amplifier P1 is also connected with the electrode input end of power amplifier P2.
The base stage of triode Q5 is connected with the output of power amplifier P1, and its colelctor electrode is connected with the electrode input end of power amplifier P3 after resistance R11, and its emitter stage is then connected with the base stage of triode Q6; The colelctor electrode of triode Q6 is connected with the negative input of power amplifier P3 after resistance R12, meanwhile, and the colelctor electrode also external+10V voltage of this triode Q6.
The base stage of triode Q7 is connected with the output of power amplifier P2 after resistance R14, and its colelctor electrode is then connected with the base stage of triode Q6 after resistance R13.Electric capacity C9 is then in parallel with resistance R14, and for guaranteeing effect, this electric capacity C9 preferentially adopts electrochemical capacitor to realize.During connection, the negative pole of electric capacity C9 is connected with the base stage of triode Q7, and its positive pole is then connected with the output of power amplifier P2.The positive pole of electric capacity C8 is connected with the negative input of power amplifier P3, and its negative pole is then connected with the emitter stage of triode Q6.Meanwhile, the negative pole of this electric capacity C8 and the equal ground connection of emitter stage of triode Q6.
One end of resistance R15 is connected with the base stage of triode Q7, the voltage of the external-4V of its other end; And one end of resistance R16 is connected with the emitter stage of triode Q7, the voltage of its other end then external equally-4V.Electric capacity C10 is then in parallel with resistance R16.Equally, described electric capacity C10 and electric capacity C8 also all adopts electrochemical capacitor to realize.
The N pole of described diode D2 is connected with the colelctor electrode of triode Q5, and its P pole is at the voltage of external-4V.For guaranteeing the normal operation of power amplifier P1 and power amplifier P2, this electric capacity C6 and electric capacity C7 all preferentially adopts patch capacitor to realize.
Described switched current source is used for providing working power to switch power amplifying circuit and driving chip M, it is by transistor Q1, transistor Q2, transistor Q3, dc source S, be serially connected in the resistance R1 between the colelctor electrode of transistor Q1 and the colelctor electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter stage of transistor Q1 and the negative pole of dc source S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of dc source S, the resistance R5 in parallel with dc source S-phase, be serially connected in the resistance R6 between the emitter stage of transistor Q3 and the negative pole of dc source S, be serially connected in the resistance R4 between the colelctor electrode of transistor Q3 and the colelctor electrode of transistor Q2, and positive pole is connected with the colelctor electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of dc source S forms.
Meanwhile, the base stage of this transistor Q2 is also connected with the colelctor electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of dc source S with the emitter stage of transistor Q2 respectively.The positive pole of described polar capacitor C2 will be connected with the electrode input end of power amplifier P1, and the negative pole of polar capacitor C2 then will be connected with the negative input of power amplifier P2.
Described RC filter circuit is then formed in parallel by resistance R3 and electric capacity C1, and namely after resistance R3 and electric capacity C1 parallel connection, an one common port is connected with the emitter stage of transistor Q1, its another common port is then connected with the negative pole of dc source S.The electrode input end of described power amplifier P4 also will be connected with the negative pole of dc source S.
For guaranteeing result of use, the high-frequency N channel mosfet grid drive chip that this driving chip M preferentially adopts Linear Techn Inc. to produce, i.e. LTC4440A integrated chip.This driving chip can with the input voltage work up to 80V, up to can continuous operation during 100V transient state.
As mentioned above, just the utility model can well be realized.

Claims (5)

1. based on the raster data model system of beam excitation formula switch power amplifying circuit, primarily of switched current source, transformer T, driving chip M, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, be serially connected with the switch power amplifying circuit between switched current source and driving chip M, and base stage is connected with the TG pin of driving chip M, colelctor electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, and the transistor Q4 of grounded emitter forms, it is characterized in that, beam excitation formula logic amplifying circuit is also serially connected with between switched current source and driving chip M, this beam excitation formula logic amplifying circuit is primarily of power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C11 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C11, the resistance R17 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R17, the polar capacitor C13 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R18 that the other end is connected with the electrode input end of power amplifier P4, be serially connected in the resistance R19 between the negative input of power amplifier P4 and output, one end is connected with the output of NAND gate IC1, the resistance R20 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C12 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C13, the resistance R21 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P4, and its output is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the output of power amplifier P4, and its output is then connected with the TD pin of driving chip M, and the electrode input end of power amplifier P4 is then connected with switched current source.
2. the raster data model system based on beam excitation formula switch power amplifying circuit according to claim 1, it is characterized in that, described switch power amplifying circuit is then by power amplifier P1, power amplifier P2, power amplifier P3, be serially connected in the resistance R9 between the output of power amplifier P1 and negative input and electric capacity C6, be serially connected in the resistance R10 between the output of power amplifier P2 and electrode input end and electric capacity C7, base stage is connected with the output of power amplifier P1, the triode Q5 that colelctor electrode is connected with the electrode input end of power amplifier P3 after resistance R11, base stage is connected with the emitter stage of triode Q5, the triode Q6 that colelctor electrode is connected with the negative input of power amplifier P3 after resistance R12, base stage is connected with the output of power amplifier P2 after resistance R14, the triode Q7 that colelctor electrode is connected with the base stage of triode Q6 after resistance R13, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter stage of triode Q6 and the electric capacity C8 of ground connection, the electric capacity C9 be in parallel with resistance R14, one end is connected with the base stage of triode Q7, the resistance R15 of the external-4V voltage of the other end, one end is connected with the emitter stage of triode Q7, the resistance R16 of the external-4V voltage of the other end, the electric capacity C10 be in parallel with resistance R16, and N pole is connected with the colelctor electrode of triode Q5, the diode D2 of the extremely external-4V voltage of P forms, the negative input of described power amplifier P1 is connected with the electrode input end of power amplifier P2, the output of power amplifier P3 is connected with the VCC pin of driving chip M, the colelctor electrode of triode Q7 is connected with the INP pin of driving chip M, and the electrode input end of power amplifier P1 is then all connected with switched current source with the negative input of power amplifier P2.
3. the raster data model system based on beam excitation formula switch power amplifying circuit according to claim 2, it is characterized in that, the Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter stage of transistor Q4; Meanwhile, the emitter stage of transistor Q4 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
4. the raster data model system based on beam excitation formula switch power amplifying circuit according to claim 3, it is characterized in that, described switched current source is by transistor Q1, transistor Q2, transistor Q3, dc source S, be serially connected in the resistance R1 between the colelctor electrode of transistor Q1 and the colelctor electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter stage of transistor Q1 and the negative pole of dc source S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of dc source S, the resistance R5 in parallel with dc source S-phase, be serially connected in the resistance R6 between the emitter stage of transistor Q3 and the negative pole of dc source S, be serially connected in the resistance R4 between the colelctor electrode of transistor Q3 and the colelctor electrode of transistor Q2, and positive pole is connected with the colelctor electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of dc source S forms, the base stage of described transistor Q2 is also connected with the colelctor electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of dc source S with the emitter stage of transistor Q2 respectively, the positive pole of described polar capacitor C2 is connected with the electrode input end of power amplifier P1, and its negative pole is then connected with the negative input of power amplifier P2, the electrode input end of described power amplifier P4 is then connected with the negative pole of dc source S.
5. the raster data model system based on beam excitation formula switch power amplifying circuit according to any one of Claims 1 to 4, is characterized in that, described driving chip M is LTC4440A integrated chip.
CN201420717141.0U 2014-11-25 2014-11-25 Based on the raster data model system of beam excitation formula switch power amplifying circuit Expired - Fee Related CN204305404U (en)

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CN201420717141.0U CN204305404U (en) 2014-11-25 2014-11-25 Based on the raster data model system of beam excitation formula switch power amplifying circuit

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Application Number Priority Date Filing Date Title
CN201420717141.0U CN204305404U (en) 2014-11-25 2014-11-25 Based on the raster data model system of beam excitation formula switch power amplifying circuit

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108323882A (en) * 2018-01-22 2018-07-27 重庆汇邡机械制造有限公司 Fully-automatic intelligent operating circuit for leather shoes production positioning

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108323882A (en) * 2018-01-22 2018-07-27 重庆汇邡机械制造有限公司 Fully-automatic intelligent operating circuit for leather shoes production positioning
CN108323882B (en) * 2018-01-22 2020-03-03 温州雅希妮鞋业有限公司 Full-automatic intelligent working system for leather shoe production positioning

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