CN204251753U - 一种用于提高单晶拉速的冷却设备 - Google Patents
一种用于提高单晶拉速的冷却设备 Download PDFInfo
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- CN204251753U CN204251753U CN201420653428.1U CN201420653428U CN204251753U CN 204251753 U CN204251753 U CN 204251753U CN 201420653428 U CN201420653428 U CN 201420653428U CN 204251753 U CN204251753 U CN 204251753U
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- cooling drum
- described cooling
- liquid level
- single crystal
- crystal growing
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- 238000001816 cooling Methods 0.000 title claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201420653428.1U CN204251753U (zh) | 2014-10-30 | 2014-10-30 | 一种用于提高单晶拉速的冷却设备 |
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CN201420653428.1U CN204251753U (zh) | 2014-10-30 | 2014-10-30 | 一种用于提高单晶拉速的冷却设备 |
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CN204251753U true CN204251753U (zh) | 2015-04-08 |
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CN201420653428.1U Active CN204251753U (zh) | 2014-10-30 | 2014-10-30 | 一种用于提高单晶拉速的冷却设备 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109811400A (zh) * | 2017-11-20 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种长晶炉及长晶炉的水冷套 |
CN110735179A (zh) * | 2018-07-20 | 2020-01-31 | 上海新昇半导体科技有限公司 | 一种应用于单晶炉的冷却装置及单晶炉 |
-
2014
- 2014-10-30 CN CN201420653428.1U patent/CN204251753U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109811400A (zh) * | 2017-11-20 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种长晶炉及长晶炉的水冷套 |
CN110735179A (zh) * | 2018-07-20 | 2020-01-31 | 上海新昇半导体科技有限公司 | 一种应用于单晶炉的冷却装置及单晶炉 |
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Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210702 Address after: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee after: TIANJIN ZHONGHUAN SEMICONDUCTOR Co.,Ltd. Address before: 010070 18 jinlijie street, Jinqiao Development Area, Hohhot, the Inner Mongolia Autonomous Region Patentee before: INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee after: TCL Zhonghuan New Energy Technology Co.,Ltd. Address before: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee before: TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD. |
|
CP01 | Change in the name or title of a patent holder |