CN204216025U - 硅通孔金属柱背面互联结构 - Google Patents

硅通孔金属柱背面互联结构 Download PDF

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CN204216025U
CN204216025U CN201420519646.6U CN201420519646U CN204216025U CN 204216025 U CN204216025 U CN 204216025U CN 201420519646 U CN201420519646 U CN 201420519646U CN 204216025 U CN204216025 U CN 204216025U
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via metal
metal post
silicon via
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ubm layer
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丁万春
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Tongfu Microelectronics Co Ltd
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Nantong Fujitsu Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13026—Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body
    • H01L2224/13028—Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body the bump connector being disposed on at least two separate bonding areas, e.g. bond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent

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  • Microelectronics & Electronic Packaging (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本实用新型提供一种硅通孔金属柱背面互联结构，包括：硅基板、锡球结构、至少一个硅通孔金属柱和与所述硅通孔金属柱个数相同的凸点下金属层；所述硅通孔金属柱设置在所述硅基板中，并延伸至所述硅基板背面形成凸点；每个所述凸点下金属层分别与一个所述凸点连接，各所述凸点下金属层间隔设置；所述锡球结构环包设置在具有互联关系的至少两个硅通孔金属柱对应的凸点下金属层上。本方案在硅通孔金属柱本体上，将露出硅基板背面的硅通孔金属柱作为凸点，在该凸点表面形成可焊接用的凸点下金属层，这种结构在外界压力下锡球焊点不易变形，产品性能稳定。

Description

硅通孔金属柱背面互联结构
技术领域
本实用新型涉及半导体技术领域，尤其涉及一种硅通孔金属柱背面互联结构。
背景技术
在硅通孔(through silicon via，TSV)工艺的背面凸块(bump)工艺中，常常采用传统bump的工艺，进行背面bump的加工，即硅基板背面焊锡球与硅通孔金属柱的接触面位于硅基板背面的表面，这种结构在外界压力下凸块很容易变形，致使凸块之间连通，进而导致产品性能失效。
实用新型内容
本实用新型的目的在于提供一种硅通孔金属柱背面互联结构。
本实用新型提供一种硅通孔金属柱背面互联结构，包括：
硅基板、锡球结构、至少一个硅通孔金属柱和与所述硅通孔金属柱个数相同的凸点下金属层；所述硅通孔金属柱设置在所述硅基板中，并延伸至所述硅基板背面形成凸点；每个所述凸点下金属层分别与一个所述凸点连接，各所述凸点下金属层间隔设置；所述锡球结构环包设置在具有互联关系的至少两个硅通孔金属柱对应的凸点下金属层上。
本实用新型提供的硅通孔金属柱背面互联结构，在硅通孔金属柱本体上，将露出硅基板背面的硅通孔金属柱作为凸点，在该凸点表面形成可焊接用的凸点下金属层，这种结构在外界压力下锡球焊点不易变形，产品性能稳定。
附图说明
图1为本实用新型提供的一种硅通孔金属柱背面互联结构的示意图；
图2为本实用新型提供的又一种硅通孔金属柱背面互联结构的示意图。
具体实施方式
图1为本实用新型提供的一种硅通孔金属柱背面互联结构的示意图，如图1所示，该硅通孔金属柱背面互联结构具体包括：硅基板11、锡球结构12、至少一个硅通孔金属柱13和与硅通孔金属柱13个数相同的凸点下金属层14；硅通孔金属柱13设置在硅基板11中，并延伸至硅基板11背面形成凸点15；每个凸点下金属层14分别与一个凸点15连接，各凸点下金属层14间隔设置；锡球结构12环包设置在具有互联关系的至少两个硅通孔金属柱13对应的凸点下金属层14上。
进一步的，如图2所示，在硅基板11背面且除凸点15所在位置区域的剩余区域还设置有隔离层16；具体工艺中，该隔离层16的厚度可设置的薄一些，使其表面不高于凸点15的表面，如此，该隔离层16即起到隔离硅基板11的作用，同时不影响凸点15后续与凸点下金属层14间的连接。
进一步的，如图2所示，位于硅基板11正面还设置有至少一个顶层凸块17，该顶层凸块17用于多层硅基板互联。
进一步的，如图2所示，上述硅通孔金属柱13具体为圆柱形结构，且该圆柱形结构的一个底面垂直延伸至硅基板11背面形成上述凸点15。
进一步的，如图2所示，凸点下金属层14具体包括镍层和位于该镍层外的锡层，其中镍层对应环包凸点15的表面；或者，该凸点下金属层14具体为锡层。
本实用新型提供的硅通孔金属柱背面互联结构，在硅通孔金属柱本体上，将露出硅基板背面的硅通孔金属柱作为凸点，在该凸点表面形成可焊接用的凸点下金属层，这种结构在外界压力下锡球焊点不易变形，产品性能稳定。
最后应说明的是：以上各实施例仅用以说明本实用新型的技术方案，而非对其限制；尽管参照前述各实施例对本实用新型进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本实用新型各实施例技术方案的范围。

Claims (6)

1.一种硅通孔金属柱背面互联结构，其特征在于，包括：
硅基板、锡球结构、至少一个硅通孔金属柱和与所述硅通孔金属柱个数相同的凸点下金属层；所述硅通孔金属柱设置在所述硅基板中，并延伸至所述硅基板背面形成凸点；每个所述凸点下金属层分别与一个所述凸点连接，各所述凸点下金属层间隔设置；所述锡球结构环包设置在具有互联关系的至少两个硅通孔金属柱对应的凸点下金属层上。
2.根据权利要求1所述的硅通孔金属柱背面互联结构，其特征在于，在所述硅基板背面且除所述凸点所在位置区域的剩余区域还设置有隔离层。
3.根据权利要求1所述的硅通孔金属柱背面互联结构，其特征在于，在所述硅基板正面还设置有至少一个顶层凸块。
4.根据权利要求1所述的硅通孔金属柱背面互联结构，其特征在于，所述硅通孔金属柱具体为圆柱形结构，且所述圆柱形结构的一个底面垂直延伸至所述硅基板背面形成所述凸点。
5.根据权利要求1-4任一项所述的硅通孔金属柱背面互联结构，其特征在于，所述凸点下金属层包括镍层和位于所述镍层外的锡层，所述镍层环包所述凸点表面。
6.根据权利要求1-4任一项所述的硅通孔金属柱背面互联结构，其特征在于，所述凸点下金属层具体为锡层。
CN201420519646.6U 2014-09-10 2014-09-10 硅通孔金属柱背面互联结构 Expired - Lifetime CN204216025U (zh)

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