CN204189821U - There is the luminescent device at broad sensing angle - Google Patents
There is the luminescent device at broad sensing angle Download PDFInfo
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- CN204189821U CN204189821U CN201420560909.8U CN201420560909U CN204189821U CN 204189821 U CN204189821 U CN 204189821U CN 201420560909 U CN201420560909 U CN 201420560909U CN 204189821 U CN204189821 U CN 204189821U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Abstract
The utility model provides a kind of luminescent device with broad sensing angle.Described luminescent device comprises: ray structure body; Substrate, is positioned on described ray structure body; Antireflection layer, covers the side of described ray structure body and described substrate, wherein, and the exposure at least partially above described substrate.Accordingly, provide and have nothing to do with lighting angle and launch the wealthy luminescent device of the sensing angular width of uniform light quantity.
Description
Technical field
The utility model relates to a kind of luminescent device, specifically, relates to a kind of luminescent device by surface treatment etc. with broad sensing angle.
Background technology
Luminescent device, as the inorganic semiconductor device combining the light produced again being emitted through electronics and hole, is widely used in the various fields such as display, Vehicle lamp, general lighting in recent years.Especially, gallium nitride, aluminum nitride and other nitride semiconductor have direct transition type characteristic, and can be fabricated to the band gap with multiple band domain, thus can manufacture as required multi-wavelength with luminescent device.
Luminescent device needs the sensing angle of multiple scope according to its purposes, and such as, the backlight for display or the UV luminescent device for sterilizing unit etc. preferably have broad sensing angle.Therefore, additional formation or the application of applying lens and so on carry out the technology of surface treatment etc. to widen the sensing angle of luminescent device to luminescent device.
In addition, the luminescent device of the wafer-level packaging part of independent package body or chip on board (chip-on-board) form is not utilized to require to regulate when not having the independent additional formation of lens and so on to point to angle.But, although existing Surface-micromachining process etc. can improve the light extraction efficiency of luminescent device, be difficult to widen and point to angle.Especially, for UV luminescent device, owing to cannot being out of shape because of UV light or the molded section of material of deterioration or lens by applications exploiting, therefore limited when applying the technology of widening and pointing to angle.
Therefore, the luminescent device not applying package body or lens is needed to widen the technology pointing to angle.
Utility model content
Technical problem to be solved in the utility model is, provides a kind of luminescent device with broad sensing angle.
Another technical problem to be solved in the utility model is, provide a kind of do not comprise lens and so on additional formation and there is the luminescent device at broad sensing angle.
According to the luminescent device of an embodiment of the present utility model, comprising: ray structure body; Substrate, is positioned on described ray structure body; Antireflection layer, covers the side of described ray structure body and described substrate, wherein, and the exposure at least partially above described substrate.
Described substrate can comprise: fillet surface, and be formed at the corner, top of described substrate and tilt, described antireflection layer can cover described fillet surface.
In addition, described substrate also can comprise: relief pattern, be formed at described substrate above and there is protuberance and depressed part, described antireflection layer can fill the depressed part of described relief pattern.
Locally exposing by the protuberance of described relief pattern above of described substrate.
In addition, described depressed part can have V-shape.
The slope of described fillet surface can be identical with the slope of described depressed part.
Described antireflection layer can comprise SiO
2, SiN
x, SiON, MgF
2, MgO, Si
3n
4, Al
2o
3, SiO, TiO
2, Ta
2o
5, ZnS, CeO, CeO
2in one.
In addition, described ray structure body can launch the light of the peak wavelength with ultraviolet range.
Described luminescent device also can comprise: electrode, is positioned at below described ray structure body.
In several embodiments, described ray structure body comprises: the first conductive-type semiconductor layer; Multiple boss, spaced and be positioned at below described first conductive-type semiconductor layer, and comprise active layer and the second conductive-type semiconductor layer respectively; Reflecting electrode, be arranged in described multiple boss each below and ohmic contact in described second conductive-type semiconductor layer; Current spreading layer, cover described multiple boss and described first conductive-type semiconductor layer, and be arranged in described multiple boss each below region, and there is the peristome that described reflecting electrode is exposed, and ohmic contact is in described first conductive-type semiconductor layer, and is formed with described multiple boss and insulate.
Described multiple boss has shape that is parallel to each other along direction, side and the length extended, and the peristome of described current spreading layer can be partial to the same end side of described multiple boss and arrange.
In addition, described luminescent device also can comprise: upper insulation layer, covers described current spreading layer at least partially, and has the peristome that described reflecting electrode is exposed; Second electronic pads, is positioned in described upper insulation layer, and is connected to the peristome of described upper insulation layer and the reflecting electrode exposed.
In addition, described luminescent device also can comprise: the first electronic pads, is connected to described current spreading layer.
According to the utility model, owing to comprising the substrate that antireflection layer and upper surface expose at least partially, the luminescent device with broad sensing angle therefore can be provided.In addition, can provide and have nothing to do with lighting angle and launch the luminescent device of the light quantity of constant, and the luminescent device with broad sensing angle is provided when not adding extra formation, thus the reliability of luminescent device can be improved.
Accompanying drawing explanation
Fig. 1 to Fig. 4 is for illustration of according to the luminescent device of an embodiment of the present utility model and the profile of manufacture method thereof.
Fig. 5 to Fig. 7 is for illustration of according to the luminescent device of another embodiment of the present utility model and the profile of manufacture method thereof.
Fig. 8 A to Figure 12 B is profile for illustration of the luminescent device according to another embodiment of the present utility model and plane graph.
Embodiment
Below, with reference to the accompanying drawings embodiment of the present utility model is described in detail.Embodiment described below is exemplarily provided to design of the present utility model fully to convey to those skilled in the art.Therefore, the utility model is not limited to following illustrated embodiment, and can be embodied as other form.Further, in the accompanying drawings, for convenience's sake, the width, length, thickness etc. that inscape is shown may be exaggerated.In addition, when an inscape be recited as be in another inscape " top " or " on " time, not only comprise various piece " directly " be in another part " top " or " on " situation, but also be included in the situation of the inscape that to there are other between each inscape and another inscape.Run through whole specification, identical label represents identical inscape.
Fig. 1 to Fig. 4 is for illustration of according to the luminescent device of an embodiment of the present utility model and the profile of manufacture method thereof.
With reference to Fig. 1, light-emitting diode 100 forms mask pattern 120.Described light-emitting diode 100 is included in the ray structure body that top is formed with substrate 21.
Light-emitting diode 100 can comprise ray structure body 110 and be positioned at the substrate 21 on described ray structure body 110.Ray structure body 110 can comprise the electrode (not shown) being formed at bottom, and accordingly, described light-emitting diode 100 can be used as wafer-level packaging part and without the need to encapsulation process.The structure of ray structure body 110 is unrestricted, such as, can have flip chip structure or vertical type structure.Below, with reference to Fig. 8 A to Figure 12 B, light-emitting diode 100 example is described.Just, the utility model is not limited thereto, and the embodiment below provided understands the utility model for helping.
Fig. 8 A to Figure 12 B is for illustration of according to the light-emitting diode 100 of an embodiment of the present utility model and the figure of manufacture method thereof, and (a) is plane graph in each figure, and (b) is the profile intercepted along intercepting line A-A.
First, with reference to Fig. 8 A and Fig. 8 B, form the first conductive-type semiconductor layer 23 on the base plate (21, and form spaced multiple boss (mesa) M on described first conductive-type semiconductor layer 23.Multiple boss M comprises active layer 25 and the second conductive-type semiconductor layer 27 respectively.Active layer 25 is between the first conductive-type semiconductor layer 23 and the second conductive-type semiconductor layer 27.In addition, each reflecting electrode 30 is positioned on described multiple boss M.
After utilizing Metalorganic chemical vapor deposition method (MOCVD) etc. growth comprise the epitaxial loayer of the first conductive-type semiconductor layer 23, active layer 25 and the second conductive-type semiconductor layer 27 on the base plate (21, second conductive-type semiconductor layer 27 and active layer 25 patterning are exposed to make the first conductive-type semiconductor layer 23, described multiple boss M can be formed thus.The technology of Photoresist reflow (Photoresist reflow) and so on can be used to make the side of described multiple boss M be formed as.The profile (Profile) of the inclination of boss M side can improve the extraction efficiency of the light generated from active layer 25.
As shown in the figure, multiple boss M can have shape that is parallel to each other along direction, side and the length extended.The step that such shape makes multiple chip areas on the base plate (21 form multiple boss M of identical shape simplifies.
In addition, described reflecting electrode 30 can be formed on each boss M after multiple boss M is formed, but is not limited thereto, also can growth regulation two conductive semiconductor layer 27 being previously formed on the second conductive-type semiconductor layer 27 before formation boss M.Reflecting electrode 30 covers the major part above boss M, and has the shape roughly the same with the flat shape of boss M.
Reflecting electrode 30 comprises reflector 28, and then can comprise barrier layer 29, barrier layer 29 can cover reflector 28 above and side.Such as, the pattern in reflector 28 can be formed, and form barrier layer 29 thereon, be formed as to make barrier layer 29 covering reflector 28 above and side.Such as, reflector 28 by evaporation and patterning Ag, Ag alloy, Ni/Ag, NiZn/Ag, TiO/Ag layer formed.In addition, described barrier layer 29 can be formed by Ni, Cr, Ti, Pt or its composite bed, and can prevent the metallics diffusion in reflector or pollute.
After the described multiple boss M of formation, the edge of described first conductive-type semiconductor layer 23 also can be etched.Accordingly, the upper side of substrate 21 can expose.In addition, the side of described first conductive-type semiconductor layer 23 also can be formed as.
As shown in Figure 1, described multiple boss M can be formed as the upper area inside being defined in the first conductive-type semiconductor layer 23.That is, multiple boss M can be positioned on the upper area of the first conductive-type semiconductor layer 23 with island form.
With reference to Fig. 9 A and Fig. 9 B, form the lower insulation layer 31 covering multiple boss M and the first conductive-type semiconductor layer 23.Lower insulation layer 31 has peristome 31a, 31b for allowing to be electrically connected to the first conductive-type semiconductor layer 23 and the second conductive-type semiconductor layer 27 in specific region.Such as, lower insulation layer 31 can have the peristome 31a making the first conductive-type semiconductor layer 23 exposure and the peristome 31b that reflecting electrode 30 is exposed.
Described peristome 31a can the adjacent edges of region between multiple boss M and substrate 21, and can have the shape of the length extended along boss M.In addition, peristome 31b is limited to boss M top and arranges, and is partial to the same end side of boss and arranges.
Described lower insulation layer 31 can use the technology such as chemical vapour deposition (CVD) (CVD), electron beam evaporation plating and be formed as SiO
2deng oxide-film, SiN
xdeng nitride film, MgF
2dielectric film.Described lower insulation layer 31 can be formed as individual layer, but is not limited thereto, and also can be formed as multilayer.In addition, lower insulation layer 31 can be formed as low-refraction material layer and the alternately laminated distributed Bragg reflector (DBR) of high index of refraction material layer.Such as by stacked SiO
2/ TiO
2or SiO
2/ Nb
2o
5deng layer form the high insulative reflective layer of reflectivity.
With reference to Figure 10 A and Figure 10 B, described lower insulation layer 31 forms current spreading layer 33.Described current spreading layer 33 covers described multiple boss M and described first conductive-type semiconductor layer 23.In addition, current spreading layer 33 is positioned at the upper area of described multiple boss M, and has the peristome 33a that described reflecting electrode is exposed.Described current spreading layer 33 carrys out ohmic contact in described first conductive-type semiconductor layer 23 by the peristome 31a of lower insulation layer 31.Current spreading layer 33 is formed with multiple boss M and reflecting electrode 30 by lower insulation layer 31 and insulate.
The peristome 33a of described current spreading layer 33 can have the area wider than the peristome 31b of lower insulation layer 31 respectively and be connected to reflecting electrode 30 to prevent current spreading layer 33.Therefore, the sidewall of described peristome 33a is positioned in lower insulation layer 31.
Described current spreading layer 33 is formed at nearly all area top of the substrate 31 except peristome 33a.Therefore, electric current can easily be disperseed by described current spreading layer 33.Current spreading layer 33 can the high reflecting metal layer of bag al-containing layers and so on, and high reflecting metal layer can be formed on the adhesive linkage of Ti, Cr or Ni etc.In addition, described high reflecting metal layer can be formed with the individual layer of Ni, Cr, Au etc. or the protective layer of lamination layer structure.Described current spreading layer 33 such as can have the sandwich construction of Ti/Al/Ti/Ni/Au.
With reference to Figure 11 A and Figure 11 B, described current spreading layer 33 forms upper insulation layer 35.Upper insulation layer 35 has the peristome 35a that current spreading layer 33 is exposed and the peristome 35b that reflecting electrode 30 is exposed.Described peristome 35a can have the shape extended along the direction vertical with the length direction of boss M, and has the area relatively wider than peristome 35b.Peristome 35b makes the reflecting electrode 30 exposed by the peristome 33a of current spreading layer 33 and the peristome 31b of lower insulation layer 31 expose.Peristome 35b has the area narrower than the peristome 33a of current spreading layer 33, in addition, can have the area wider than the peristome 31b of lower insulation layer 31.Accordingly, the sidewall of the peristome 33a of described current spreading layer 33 can be covered by upper insulation layer 35.
Described upper insulation layer 35 can utilize the polymer of oxide insulating layer, insulating nitride layer or polyimides, polytetrafluoroethylene, Parylene etc. to be formed.
With reference to Figure 12 A and Figure 12 B, described upper insulation layer 35 is formed the first pad 37a and second pad 37b.First pad 37a is connected to current spreading layer 33 by the peristome 35a of upper insulation layer 35, and the second pad 37b is connected to reflecting electrode 30 by the peristome 35b of upper insulation layer 35.In order to light-emitting diode being mounted on submounts (submount), packaging part or printed circuit board (PCB) etc., described first pad 37a and second pad 37b can connect bulge (bump) and use or use as the pad being used for SMT.
Described first pad 37a and second pad 37b is formed together by same process, such as, photoetching and etching technique or lift-off technology can be utilized to be formed.Described first pad 37a and second pad 37b such as can comprise the adhesive layer of Ti, Cr, Ni etc. and the high-conductive metal layer of Al, Cu, Ag or Au etc.
Afterwards, by substrate 21 is completed light-emitting diode 100 by single light-emitting diode chip for backlight unit unit.Now, substrate 21 can utilize line technique and split, and such as, can utilize laser scribe process.When utilizing laser scribing to come separating base plate 21, fillet surface can be formed in the corner, top of substrate 21.Described fillet surface can have the side of inclination.Although do not illustrate at Figure 12 A and Figure 12 B, as shown in Fig. 1 etc., fillet surface 211 can be formed in the upper edge angle part of substrate 21.
Below, with reference to Figure 12 A and Figure 12 B, the structure of the light-emitting diode 100 according to an embodiment of the present utility model is described in detail.
Described light-emitting diode comprises the first conductive-type semiconductor layer 23, boss M, reflecting electrode 30, current spreading layer 33, and can comprise substrate 21, lower insulation layer 31, upper insulation layer 35 and the first pad 37a and second pad 37b.
Substrate 21 is the growth substrates for growing gallium nitride system epitaxial loayer, such as, can be sapphire substrate, silicon carbide substrate, silicon substrate, gallium nitride base board, and in the present embodiment, described substrate 21 can be sapphire substrate.
First conductive-type semiconductor layer 23 is successional, and multiple boss M is separated by and is positioned on the first conductive-type semiconductor layer 23.As illustrated with reference to Fig. 8 A and Fig. 8 B, boss M comprises active layer 25 and the second conductive-type semiconductor layer 27, and has the shape of the length extended towards side.Here, boss M is the stepped construction of gallium nitride compound semiconductor.As shown in Fig. 8 A and Fig. 8 B, described boss M can be defined and be positioned at the upper area of the first conductive-type semiconductor layer 23.
First conductive-type semiconductor layer 23, active layer 25 and the second conductive-type semiconductor layer 27 can comprise nitride-based semiconductor.First conductive-type semiconductor layer 23 can be n-type semiconductor layer, and the second conductive-type semiconductor layer 27 can be p-type semiconductor layer, or can be contrary with it.In addition, active layer 25 can comprise nitride-based semiconductor, and the peak wavelength by regulating the ratio of components of nitride-based semiconductor to determine the light launched by active layer 25.Especially, in the present embodiment, described active layer 25 can launch the light of the peak wavelength with ultraviolet range.
Reflecting electrode 30 to lay respectively on described multiple boss M3 ohmic contact in the second conductive-type semiconductor layer 27.As with reference to Fig. 8 A and Fig. 8 B illustrates, reflecting electrode 30 can comprise reflector 28 and barrier layer 29, and barrier layer 29 can cover reflector 28 above and side.
Current spreading layer 33 covers described multiple boss M and described first conductive-type semiconductor layer 23.Described current spreading layer 33 is positioned at described each boss M upper area and has the peristome 33a that described reflecting electrode 30 is exposed.In addition, current spreading layer 33 ohmic contact is formed in described first conductive-type semiconductor layer 23 and with described multiple boss M and insulate.Described current spreading layer 33 can comprise the reflective metals of Al and so on.
Described current spreading layer 33 is formed with multiple boss M by lower insulation layer 31 and insulate.Such as, described current spreading layer 33 can be formed with described multiple boss M and insulate by lower insulation layer 31 between described multiple boss M and described current spreading layer 33.In addition, described lower insulation layer 31 can be positioned at described each boss M upper area and have the peristome 31b that described reflecting electrode 30 is exposed, and can have the peristome 31a that the first conductive-type semiconductor layer 23 is exposed.Described current spreading layer 33 is connected to the first conductive-type semiconductor layer 23 by peristome 31a.The peristome 31b of described lower insulation layer 31 has the area narrower than the peristome 33a of current spreading layer 33, and is exposed completely by peristome 33a.
Upper insulation layer 35 covers described current spreading layer 33 at least partially.In addition, upper insulation layer 35 has the peristome 35b that described reflecting electrode 30 is exposed.In addition, upper insulation layer 35 can have the peristome 35a that current spreading layer 33 is exposed.Described upper insulation layer 35 can cover the sidewall of described current spreading layer 33.
First pad 37a can be positioned on current spreading layer 33, and such as, peristome 35a by upper insulation layer 35 is connected to current spreading layer 33.In addition, the second pad 37b is connected to the reflecting electrode 30 exposed by peristome 35b.
According to the utility model, current spreading layer 33 covers nearly all region of the first conductive-type semiconductor layer 23 between boss M and boss M.Therefore, electric current can easily be disperseed by current spreading layer 33.
In addition, described current spreading layer 33 can be made to comprise the reflective metal layer of Al and so on, or lower insulation layer is formed as insulative reflective layer, thus current spreading layer 33 or lower insulation layer 31 can be utilized and the light do not reflected by reflecting electrode 30 is reflected, can light extraction efficiency be improved thus.
In the utility model, light-emitting diode 100 discussed above can be utilized, but the utility model is not limited thereto.
Referring again to Fig. 1, form mask pattern 120 on the base plate (21, accordingly, the local above of substrate 21 is exposed to the peristome 121 of mask pattern 120.Mask pattern 120 can comprise photoresist.
In addition, substrate 21 can comprise the fillet surface 211 being formed at corner, top, and when substrate 21 is divided, described fillet surface 211 can be formed in line technique.Just, be not limited thereto, described fillet surface 211 is also formed by other etch process.
Next, with reference to Fig. 2, the formation above of substrate 21 has the relief pattern of protuberance 213 and depressed part 215.
Described relief pattern is by being formed the etch process (such as, dry etch process) of mask pattern 120 as etching mask.Accordingly, substrate 21 upper surface below peristome 121 is etched, thus can form depressed part 215.Described depressed part 215 can be formed as having variform according to the form of mask pattern 120, such as, as shown in Figure 2, can have laterally inclined V-shape.
In addition, in above-mentioned description, relief pattern is described to be formed by other etch process, but unlike this, relief pattern also can be formed in the division process of the substrate 21 for the formation of light-emitting diode 100 simultaneously.Specifically, when utilize laser scribe process to points cutting board 21, laser is applied to the divided region of substrate 21, and above the substrate 21 laser being applied to each light-emitting diode 100 region.Accordingly, depressed part 215 can be formed in the region applying laser.The depressed part 215 simultaneously formed in the division process of substrate 21 can have V-shape, and the slope of its side can be identical with the slope of fillet surface 211.The depressed part 215 of described relief pattern is formed in light-emitting diode 100 division process simultaneously, thus the etch process forming relief pattern can be omitted.Thus can Simplified flowsheet.
With reference to Fig. 3 and Fig. 4, form the side of covered substrate 21, the side of ray structure body 110 fill the antireflection layer 130 of depressed part 215.
First, with reference to Fig. 3, can be formed covered substrate 21 above and side, the side of ray structure body 110 and the reflection of mask pattern 120 prevent material 130a.
The refractive index that described reflection prevents from material 130a to have being less than substrate 21 and be greater than the refractive index (n of air
air=1) refractive index.Such as, reflection prevents material 130a from can comprise SiO
2(n
siO2=about 1.45), in addition, SiO can be comprised
2, SiN
x, SiON, MgF
2, MgO, Si
3n
4, Al
2o
3, SiO, TiO
2, Ta
2o
5, ZnS, CeO, CeO
2in at least one.Reflection prevents material 130a from can utilize multiple deposition process to be formed, and specifically, planetary electrons bundle evaporation (planetary E-beam) can be utilized to be formed.Utilize planetary electrons bundle evaporation to prevent material 130a to form reflection, be also easy to reflection to prevent material 130a to be formed at the side of substrate 21 and ray structure body 110 thus.
Next, with reference to Fig. 4, if perform the stripping technology preventing material 130a by removing mask pattern 120 reflection removed on mask pattern 120, then antireflection layer 130 can be formed.Accordingly, luminescent device is as shown in Figure 4 provided.
In addition, although not shown, ray structure body 110 also can comprise the electrode be formed at below it.
Antireflection layer 130 covers the side of ray structure body 110 and substrate 21, in addition, can fill depressed part 215.Can being exposed above of protuberance 213.Antireflection layer 130 has formation as above, thus makes described luminescent device can have broad sensing angle.Below this is described in detail.
Antireflection layer 130 has the refractive index that is less than substrate 21 and is greater than the refractive index of the refractive index of air, thus can prevent the inner full-reflection of luminescent device.Such as, be sapphire substrate (n at substrate 21
sapphire=about 1.77) when, by the light of antireflection layer 130 have than from sapphire substrate directly towards the cirtical angle of total reflection that the light of air is larger.
Thus, from the ratio of the light of the side-emitted of luminescent device, there is broad sensing angle by increasing.In addition, owing to being only formed with antireflection layer 130 at the depressed part 215 be formed at above substrate 21, the probability that the light that the light therefore above directive protuberance 213 is totally reflected and comes back to device inside is launched from the side increases.In addition, because depressed part 215 has the side of inclination, the probability in the upwards vertical direction of directive is therefore greater than from the probability of the light directive side of luminescent device injection.Accordingly, luminescent device of the present utility model not only has broad sensing angle, and can be transmitted in uniform light in luminous whole angle.That is, have nothing to do with lighting angle and the illumination of constant can be maintained.
According to the present embodiment, when not adding extra formation to luminescent device, luminescent device can be only utilized independently to launch constant light with broad sensing angle and lighting angle.Especially, owing to can only utilize luminescent device to realize broad sensing angle, therefore can when manufacture cannot use may the luminescence-utraviolet device of lens etc. of the deterioration because of ultraviolet, the luminescent device that reliability improves is provided.
Fig. 5 to Fig. 7 is for illustration of according to the luminescent device of another embodiment of the present utility model and the profile of manufacture method thereof.Omit illustrating about the formation identical with formation illustrated in the above embodiments.
With reference to Fig. 5, light-emitting diode 100 is formed mask 140.Described light-emitting diode 100 is included in the ray structure body 110 that top is formed with substrate 21.
Mask 140 can be formed as above covered substrate 21, and can comprise photoresist.In addition, fillet surface 211 can not be covered by mask 140 and expose.
With reference to Fig. 6, form mask film covering 140, the reflection of the side of substrate 21 and the side of ray structure body 110 prevents material 150a.Reflection prevents material 150a from can comprise SiO
2, SiN
x, SiON, MgF
2, MgO, Si
3n
4, Al
2o
3, SiO, TiO
2, Ta
2o
5, ZnS, CeO, CeO
2in at least one, and planetary electrons bundle evaporation can be utilized to be formed.
Next, with reference to Fig. 7, the reflection of removing on mask 140 and mask 140 prevents material 150a.Accordingly, luminescent device is as shown in Figure 7 provided.
Described luminescent device comprises ray structure body 110, be positioned at the substrate 21 on ray structure body 110 and cover the antireflection layer 150 of side of ray structure body 110 and substrate 21, now, and exposing above of substrate 21.
Accordingly, the total reflection of the light of the side of directive luminescent device reduces, and the light quantity penetrated from the side can be made thus to increase.In addition, due to the probability that light is totally reflected in the side of luminescent device higher than light at the probability that the upper surface of substrate 21 and the interface of air are totally reflected, therefore more a high proportion of light can penetrate from the side of device.Accordingly, the sensing angle of luminescent device can broaden, and can maintain the illumination of constant on whole lighting angle.
Above, not departing from the scope according to the technical conceive of claims of the present utility model, various distortion and change can be carried out to above-described embodiment, and the utility model comprises all technical conceives according to claims.
Claims (13)
1. a luminescent device, is characterized in that, comprising:
Ray structure body;
Substrate, is positioned on described ray structure body;
Antireflection layer, covers the side of described ray structure body and described substrate,
Wherein, being exposed at least partially above described substrate.
2. luminescent device according to claim 1, is characterized in that,
Described substrate comprises: fillet surface, is formed at the corner, top of described substrate and tilts,
Described antireflection layer covers described fillet surface.
3. luminescent device according to claim 2, is characterized in that,
Described substrate also comprises: relief pattern, be formed at described substrate above and there is protuberance and depressed part,
Described antireflection layer fills the depressed part of described relief pattern.
4. luminescent device according to claim 3, is characterized in that,
Locally being exposed by the protuberance of described relief pattern above of described substrate.
5. luminescent device according to claim 3, is characterized in that,
Described depressed part has V-shape.
6. luminescent device according to claim 5, is characterized in that,
The slope of described fillet surface is identical with the slope of described depressed part.
7. luminescent device according to claim 1, is characterized in that,
Described antireflection layer comprises SiO
2, SiN
x, SiON, MgF
2, MgO, Si
3n
4, Al
2o
3, SiO, TiO
2, Ta
2o
5, ZnS, CeO, CeO
2in one.
8. luminescent device according to claim 1, is characterized in that,
Described ray structure body launches the light with the peak wavelength of ultraviolet range.
9. luminescent device according to claim 1, is characterized in that, also comprises:
Electrode, is positioned at below described ray structure body.
10. luminescent device according to claim 1, is characterized in that, described ray structure body comprises:
First conductive-type semiconductor layer;
Multiple boss, spaced and be arranged in below described first conductive-type semiconductor layer, and comprise active layer and the second conductive-type semiconductor layer respectively;
Reflecting electrode, be arranged in described multiple boss each below and ohmic contact in described second conductive-type semiconductor layer;
Current spreading layer, cover described multiple boss and described first conductive-type semiconductor layer, and be arranged in described multiple boss each below region, and there is the peristome that described reflecting electrode is exposed, and ohmic contact is in described first conductive-type semiconductor layer, and is formed with described multiple boss and insulate.
11. luminescent devices according to claim 10, is characterized in that,
Described multiple boss has microscler shape that is parallel to each other along direction, side and that extend, and the peristome of described current spreading layer is partial to the same end side of described multiple boss and arranges.
12. luminescent devices according to claim 10, is characterized in that, also comprise:
Upper insulation layer, covers described current spreading layer at least partially, and has the peristome that described reflecting electrode is exposed;
Second electronic pads, is positioned in described upper insulation layer, and is connected to the peristome of described upper insulation layer and the reflecting electrode exposed.
13. luminescent devices according to claim 12, is characterized in that, also comprise:
First electronic pads, is connected to described current spreading layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20130116630A KR20150037215A (en) | 2013-09-30 | 2013-09-30 | Light emitting device having wide beam angle and method of fabricating the same |
| KR10-2013-0116630 | 2013-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204189821U true CN204189821U (en) | 2015-03-04 |
Family
ID=52621796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420560909.8U Active CN204189821U (en) | 2013-09-30 | 2014-09-26 | There is the luminescent device at broad sensing angle |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20150037215A (en) |
| CN (1) | CN204189821U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159044A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | LED chip structure and preparation method thereof |
-
2013
- 2013-09-30 KR KR20130116630A patent/KR20150037215A/en not_active Application Discontinuation
-
2014
- 2014-09-26 CN CN201420560909.8U patent/CN204189821U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159044A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | LED chip structure and preparation method thereof |
| CN106159044B (en) * | 2015-04-01 | 2018-10-02 | 映瑞光电科技(上海)有限公司 | LED chip structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150037215A (en) | 2015-04-08 |
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