CN204243076U - There is the luminescent device of angle pencil of ray angle and uniform illumination intensity - Google Patents

There is the luminescent device of angle pencil of ray angle and uniform illumination intensity Download PDF

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Publication number
CN204243076U
CN204243076U CN201420565607.XU CN201420565607U CN204243076U CN 204243076 U CN204243076 U CN 204243076U CN 201420565607 U CN201420565607 U CN 201420565607U CN 204243076 U CN204243076 U CN 204243076U
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CN
China
Prior art keywords
convex
concave pattern
luminescent device
angle
area
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CN201420565607.XU
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Chinese (zh)
Inventor
张锺敏
李俊燮
徐大雄
卢元英
金贤儿
蔡钟炫
裴善敏
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首尔伟傲世有限公司
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Priority to KR10-2013-0115500 priority Critical
Priority to KR20130115500A priority patent/KR20150035211A/en
Application filed by 首尔伟傲世有限公司 filed Critical 首尔伟傲世有限公司
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Publication of CN204243076U publication Critical patent/CN204243076U/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes

Abstract

Disclose a kind of luminescent device with angle pencil of ray angle and uniform illumination intensity.Luminescent device comprises ray structure and is arranged on the transparency carrier on ray structure, wherein, transparency carrier comprises at least two kinds of different convex-concave patterns, described at least two kinds of different convex-concave patterns comprise and are arranged on the first convex-concave pattern on the upper surface of transparency carrier and the second convex-concave pattern, compared with the second convex-concave pattern, first convex-concave pattern has larger projection, and in the first convex-concave pattern and the second convex-concave pattern central area that is separately positioned on the upper surface of transparency carrier and peripheral region.Luminescent device can have angle pencil of ray angle and depend on the uniform intensity of illumination of output angle.

Description

There is the luminescent device of angle pencil of ray angle and uniform illumination intensity

Technical field

The utility model relates to a kind of luminescent device and a kind of method manufacturing this luminescent device, and more specifically, relate to a kind of comprising and be formed in pattern on its light-emitting area to obtain the luminescent device of angle pencil of ray angle and uniform illumination intensity thus, and manufacture the method for this luminescent device.

Background technology

Luminescent device produces luminous inorganic semiconductor device by the compound in electronics and hole, and be used in the different field of such as display, vehicle lamp and general lighting device etc.Particularly, nitride-based semiconductor due to such as gallium nitride semiconductor and aluminium gallium nitride alloy semiconductor can belong to direct transition type and can be manufactured with different band gaps, so can use nitride-based semiconductor as required to manufacture the luminescent device with emitting at different wavelengths scope.

Luminescent device needs the scope with different beam angles according to its application.Such as, it is favourable that the UV luminescent device being applied to the back light unit of display, sterilizer etc. has angle pencil of ray angle.Therefore, such as lens add-on assemble or be such as used to for the surface-treated technology of luminescent device the beam angle increasing luminescent device.

For having the wafer-level packaging part or chip on board type luminescent device that there is no individual packages body, need to regulate its beam angle when there is no the add-on assemble of such as lens.But, although typical process for treating surface can increase the light extraction efficiency of luminescent device, have difficulties in its beam angle of increase.Particularly, due to undesirably by by can be out of shape because of UV light or the assembly of injection moulding that the material of deterioration is made or lens are applied to UV luminescent device, so there is restriction in the application aspect of the technology for increasing beam angle.In addition, the problem that the intensity of illumination of the output angle of light is uneven is depended in the technology existence for increasing beam angle by increasing the light quantity being emitted to the side surface of luminescent device.Particularly, the amount that there is the light launched along the direction vertical with the emitting surface of luminescent device is greater than the shortcoming of the amount of the light of the side surface being emitted to luminescent device widely.

Therefore, there is the demand to providing the technology of uniform intensity of illumination while the beam angle for increasing luminescent device when not utilizing packaging body or lens regardless of the output angle of light.

Utility model content

The utility model aims to provide a kind of luminescent device with angle pencil of ray angle and uniform illumination intensity.

In addition, the utility model aims to provide the luminescent device manufacturing and can regulate the uniformity of beam angle and intensity of illumination according to the emitting performance of luminescent device.

According to one side of the present utility model, luminescent device comprises: ray structure; And transparency carrier, be arranged on ray structure, wherein, transparency carrier comprises at least two kinds of different convex-concave patterns, and described at least two kinds of different convex-concave patterns comprise and are arranged on the first convex-concave pattern on the upper surface of transparency carrier and the second convex-concave pattern.Here, compared with the second convex-concave pattern, the first convex-concave pattern has larger projection, and in the first convex-concave pattern and the second convex-concave pattern central area that is separately positioned on the upper surface of transparency carrier and outer peripheral areas.

The upper surface of transparency carrier can comprise first area and second area, wherein, first area is arranged in the central area of the upper surface of transparency carrier, second area is arranged in the region surrounding first area, and the first convex-concave pattern and the second convex-concave pattern can be arranged in first area and second area.

First convex-concave pattern and/or the second convex-concave pattern can comprise at least two kinds of difform projections.

On the contrary, the first convex-concave pattern and the second convex-concave pattern can comprise the projection of same shape.

The projection of the first convex-concave pattern and/or the second convex-concave pattern can have at least one in hemisphere, taper shape, conical butt and convex heart.

Described at least two kinds of different convex-concave patterns also can comprise the 3rd convex-concave pattern compared with the second convex-concave pattern with less projection.

The upper surface of transparency carrier can comprise first area to the 3rd region, wherein, first area is arranged in the central area of the upper surface of transparency carrier, second area is arranged in the region surrounding first area, 3rd region is arranged in the region surrounding second area, and the first convex-concave pattern to the 3rd convex-concave pattern can be arranged in first area in the 3rd region.

In certain embodiments, transparency carrier can comprise sapphire substrate.

Luminescent device also can comprise and is arranged on the first electrode below ray structure and the second electrode.

The antireflection layer of the side surface covering transparency carrier also can be comprised according to the luminescent device of other embodiments.

Ray structure can send the light of the peak wavelength had in UV wave band.

In certain embodiments, ray structure can comprise: the first conductive-type semiconductor layer; Multiple table top, is set to below the first conductive-type semiconductor layer separated from one another, and wherein, each table top includes active layer and the second conductive-type semiconductor layer; Reflecting electrode, is separately positioned on below described multiple table top, and forms ohmic contact with the second conductive-type semiconductor layer; And current extending, cover described multiple table top and the first conductive-type semiconductor layer, wherein, current extending can have and is arranged on below each table top and makes the opening that reflecting electrode is exposed by it, form the ohmic contact with the first conductive-type semiconductor layer, and insulate with described multiple table top.

Described multiple table top can have elongated shape and extend parallel to each other along a direction, and the opening of current extending can be partial to the same side of described multiple table top.

Luminescent device also can comprise: upper insulating barrier, covers current extending at least partially, and has the opening exposing reflecting electrode; And second electrode pad, to be arranged on insulating barrier and the reflecting electrode that exposes of the opening being connected to insulating barrier.

Luminescent device also can comprise the first electrode pad being connected to current extending.

According to another aspect of the present utility model, a kind of method manufacturing luminescent device comprises: prepare the ray structure it being formed with transparency carrier; Etch mask pattern is set on the transparent substrate; And on the transparent substrate by using etch mask pattern to remove transparency carrier to be formed at least two kinds of different convex-concave patterns as masking part, wherein, etch mask pattern comprises at least two kinds of different mask patterns, described at least two kinds of different convex-concave patterns comprise be arranged in transparency carrier central area and peripheral region on the first mask pattern and the second mask pattern, and the convex-concave pattern be formed in below the first mask pattern is greater than the convex-concave pattern be formed in below the second mask pattern.

According to embodiment of the present utility model, transparency carrier is formed as its upper surface has at least two kinds of different convex-concave patterns, provides the luminescent device with angle pencil of ray angle and uniform illumination intensity thus.Particularly, the amount of the light of the side surface being emitted to luminescent device can be increased.

In addition, according to embodiment of the present utility model, the method for described manufacture luminescent device can easily regulate the beam angle of luminescent device and the uniformity of intensity of illumination by simple technique change.

Accompanying drawing explanation

By the detailed description of carrying out embodiment below in conjunction with accompanying drawing, above and other aspects, features and advantages of the present utility model will become obvious, in the accompanying drawings:

Fig. 1 a and Fig. 1 b is plane graph according to the luminescent device of an embodiment of the present utility model and cutaway view respectively;

Fig. 2 a and Fig. 2 b is plane graph according to the luminescent device of another embodiment of the present utility model and cutaway view respectively; Fig. 3 a and Fig. 3 b is plane graph according to the luminescent device of other embodiment of the present utility model and cutaway view respectively;

Fig. 4 to Fig. 6 is the method for the top pattern that the luminescent device of manufacture respectively shown in Fig. 1 a to Fig. 3 b is shown; And

Fig. 7 a, Fig. 8 a, Fig. 9 a, Figure 10 a and Figure 11 a are the plane graphs that the step of method according to the manufacture light-emitting diode of an embodiment of the present utility model and the light-emitting diode of correspondence thereof are shown, Fig. 7 b, Fig. 8 b, Fig. 9 b, Figure 10 b and Figure 11 b illustrate respectively along the cutaway view that the line A-A in Fig. 7 a, Fig. 8 a, Fig. 9 a, Figure 10 a and Figure 11 a intercepts.

Embodiment

Below, embodiment of the present utility model is described in detail with reference to the accompanying drawings.There is provided following embodiment by way of example, so that spirit of the present utility model is conveyed to the utility model those skilled in the art fully.Therefore, the utility model is not limited to disclosed embodiment and can implementing in different forms here.In the accompanying drawings, conveniently, the width, length, thickness etc. of element can be exaggerated.In addition, when element be called as " " another element " top " or " " another element " on " time, go back element can " directly exist " other elements " top " or " directly existing " other elements " on ", or can intermediary element be there is.Run through specification, same Reference numeral instruction has the same element of same or similar function.

Fig. 1 a and Fig. 1 b is plane graph according to the luminescent device of an embodiment of the present utility model and cutaway view respectively.Cutaway view illustrates the section intercepted along the line A-A' illustrated in plan view.

With reference to Fig. 1 a and Fig. 1 b, the luminescent device according to an embodiment of the present utility model comprises light-emitting diode 100, and light-emitting diode 100 comprises transparency carrier 21 and ray structure 110.

Can will any structure of semiconductor layer luminescence can be utilized unrestricted as ray structure 110, and ray structure 110 can have the flip chip structure or vertical type structure that such as comprise n-type semiconductor layer and p-type semiconductor layer.In addition, luminescent device also can comprise and is formed in the first electrode below ray structure 110 and the second electrode (not shown), therefore can be used as the wafer-level packaging part without encapsulation.Particularly, ray structure 110 can send the light of the peak wavelength had at UV wave band.

An example of light-emitting diode 100 is described now with reference to Fig. 7 a to Figure 11 b.It should be understood, however, that the utility model is not limited thereto, and provide below by the structure of the light-emitting diode 100 of description with help understand the utility model.

Fig. 7 a to Figure 11 b illustrates according to the light-emitting diode 100 of an embodiment of the present utility model and the method manufacturing this light-emitting diode, Fig. 7 a, Fig. 8 a, Fig. 9 a, Figure 10 a and Figure 11 a illustrate plane graph, and Fig. 7 b, Fig. 8 b, Fig. 9 b, Figure 10 b and Figure 11 b illustrate the cutaway view intercepted along the line A-A illustrated in plan view.

First, with reference to Fig. 7 a and Fig. 7 b, the first conductive-type semiconductor layer 23 is formed on transparency carrier 21, and multiple table top M is formed as separated from one another on the first conductive-type semiconductor layer 23.Each in multiple table top M includes active layer 25 and the second conductive-type semiconductor layer 27.Active layer 25 is had to be placed between the first conductive-type semiconductor layer 23 and the second conductive-type semiconductor layer 27.Reflecting electrode 30 is separately positioned on multiple table top M.

Can grow by metal organic chemical vapor deposition (MOCVD) epitaxial loayer comprising the first conductive-type semiconductor layer 23, have active layer 25 and the second conductive-type semiconductor layer 27 by transparency carrier 21, then patterning second conductive-type semiconductor layer 27 and have active layer 25 to expose the first conductive-type semiconductor layer 23, forms multiple table top M.The side surface of multiple table top M is formed obliquely by photoresist backflow or other technologies.The angled profile of the side surface of table top M improves in the extraction efficiency having the light produced in active layer 25.

Multiple table top M can have elongated shape and extend parallel to each other along a direction, as shown in figs. 7 a and 7b.The formation with the multiple table top Ms of same shape of such shape simplification in the chip area of multiple transparency carrier 21.

Although reflecting electrode 30 can be formed on each table top M after formation table top M, it should be understood that the utility model is not limited thereto.Selectively, after defining the second conductive-type semiconductor layer 27, before formation table top M, reflecting electrode 30 can be formed on the second conductive-type semiconductor layer 27.Reflecting electrode 30 covers the major part of the upper surface of table top M and has the shape substantially the same with the shape of table top M in plan view.

Reflecting electrode 30 comprises reflector 28 and also can comprise barrier layer 29.Barrier layer 29 can cover upper surface and the side surface in reflector 28.Such as, form the pattern in reflector 28 and then form barrier layer 29 thereon, barrier layer 29 can be formed as the upper surface and the side surface that cover reflector 28 thus.Such as, reflector 28 is formed, then patterning by deposition Ag, Ag alloy, Ni/Ag, NiZn/Ag, TiO/Ag or Pt/Ag.Barrier layer 29 can be formed by Ni, Cr, Ti, Pt, W, Mo or their composite bed, and prevents metal material from spreading in reflector or polluting.

After the multiple table top M of formation, the edge of the first conductive-type semiconductor layer 23 also can stand etching.Therefore, the upper surface of substrate 21 can be exposed.Also tiltably form the side surface of the first conductive-type semiconductor layer 23.

As shown in figs. 7 a and 7b, multiple table top M can restrictively be arranged in the upper region of the first conductive-type semiconductor layer 23.That is, multiple table top M can be arranged on the upper region of the first conductive-type semiconductor layer 23 with island shape.

With reference to Fig. 8 a and Fig. 8 b, lower insulating barrier 31 is formed to cover multiple table top M and the first conductive-type semiconductor layer 23.Lower insulating barrier 31 has in its specific region, allow to be electrically connected to the first conductive-type semiconductor layer 23 and the second conductive-type semiconductor layer 27 opening 31a, 31b.Such as, lower insulating barrier 31 can have the opening 31a of exposure first conductive-type semiconductor layer 23 and expose the opening 31b of reflecting electrode 30.

Opening 31a can be arranged between table top M and close to the edge of substrate 21, and can have the elongated shape extended along table top M.In addition, be arranged on to being limited property of opening 31b on table top M and be biased (or same side of deflection table top) with the same side to table top.

By chemical vapour deposition (CVD) (CVD), electron beam evaporation etc. by SiO 2oxidation film, SiN xnitride film or MgF 2dielectric film forms lower insulating barrier 31.Although lower insulating barrier 31 can be made up of individual layer, lower insulating barrier 31 also can be made up of multilayer.In addition, lower insulating barrier 31 can be formed going up alternately stacking distributed Bragg reflector (DBR) each other by the material layer of low-refraction and high index of refraction.Such as, by stacking SiO 2/ TiO 2layer or SiO 2/ Nb 2o 5layer forms the insulative reflective layer with high reflectance.

With reference to Fig. 9 a and Fig. 9 b, current extending 33 is formed on lower insulating barrier 31.Current extending 33 covers multiple table top M and the first conductive-type semiconductor layer 23.Current extending 33 has the opening 33a being arranged on and above each table top M, reflecting electrode being exposed by it.Current extending 33 forms the ohmic contact with the first conductive-type semiconductor layer 23 by the opening 31a of lower insulating barrier 31.Current extending 33 is insulated by lower insulating barrier 31 and multiple table top M and reflecting electrode 30.

The opening 33a of current extending 33 has the area larger than the opening 31b of lower insulating barrier 31, contacts with reflecting electrode 30 to prevent current extending 33.Therefore, the sidewall of opening 33a is arranged on lower insulating barrier 31.

Current extending 33 is formed in not comprising on the substantially whole upper region of opening of substrate 21.Therefore, electric current easily scatters by current extending 33.Current extending 33 can comprise the high reflecting metal layer of such as Al layer, and high reflecting metal layer can be formed on the binder course of such as Ti, Cr, Ni etc.In addition, the protective layer of the single layer structure or lamination layer structure with Ni, Cr or Au can be formed on high reflecting metal layer.Current extending 33 can have the sandwich construction of such as Ti/Al/Ti/Ni/Au.

With reference to Figure 10 a and Figure 10 b, upper insulating barrier 35 is formed on current extending 33.Upper insulating barrier 35 has the opening 35b exposing the reflecting electrode 30 and opening 35a exposing current extending 33.Opening 35a can have the elongated shape arranged along the direction vertical with the longitudinal direction of table top M, and can have the area larger than opening 35b.Opening 35b exposes the reflecting electrode 30 exposed by the opening 33a of current extending 33 and the opening 31b of lower insulating barrier 31.Opening 35b can have less than the opening 33a of current extending 33 but larger than the opening 31b of lower insulating barrier 31 area.Therefore, the sidewall of the opening 33a of current extending 33 can be covered by upper insulating barrier 35.

Can use oxide insulating layer, insulating nitride layer or such as polyimides, Teflon, Parylene etc. polymer to form upper insulating barrier 35.

Be formed on insulating barrier 35 with reference to Figure 11 a and Figure 11 b, the first pad 37a and the second pad 37b.First pad 37a is connected to current extending 33 by the opening 35a of upper insulating barrier 35, and the second pad 37b is connected to reflecting electrode 30 by the opening 35b of upper insulating barrier 35.First pad 37a and the second pad 37b can be used as the pad for being connected for light-emitting diode being arranged on the jut on base station, packaging part or printed circuit board (PCB), or are used as the pad of surface mounting technology (SMT).

Form the first pad 37a and the second pad 37b by identical technique (such as, photoetching and etching technics or stripping technology) simultaneously.First pad 37a and the second pad 37b can comprise the binder course formed by such as Ti, Cr, Ni etc., and the high conductivity metal layer formed by Al, Cu, Ag, Au etc.

Then, transparency carrier 21 is divided into single light-emitting diode chip for backlight unit unit, the light-emitting diode chip for backlight unit provided thus.Now, the scribing (scribing) by such as laser scribing divides transparency carrier 21.

Below, the structure of the light-emitting diode 100 according to embodiment of the present utility model is described in detail with reference to Figure 11 a and Figure 11 b.

Light-emitting diode can comprise the first conductive-type semiconductor layer 23, table top M, reflecting electrode 30, current extending 33, transparency carrier 21, lower insulating barrier 31, upper insulating barrier 35 and the first pad 37a and the second pad 37b.

Transparency carrier 21 can be the growth substrate for growing gallium nitride epitaxial loayer, such as, can be sapphire substrate, silicon carbide substrate, silicon substrate or gallium nitride base board.In this embodiment, transparency carrier 21 can be sapphire substrate.

First conductive-type semiconductor layer 23 is continuous print, and multiple table top M is set on the first conductive-type semiconductor layer 23 separated from one another.As with reference to shown in Fig. 1 a and Fig. 1 b, table top M includes active layer 25 and the second conductive-type semiconductor layer 27 and has the elongated shape extended towards side.Here, table top M is the stacking of gallium nitride compound semiconductor layer.As illustrated in figs. ia and ib, be arranged on to being limited property of table top M in the upper region of the first conductive-type semiconductor layer 23.

First conductive-type semiconductor layer 23, active layer 25 and the second conductive-type semiconductor layer 27 is had to comprise nitride-based semiconductor.First conductive-type semiconductor layer 23 and the second conductive-type semiconductor layer 27 can be n-type semiconductor layer and p-type semiconductor layer respectively, or vice versa.Active layer 25 is had to comprise nitride-based semiconductor, and the peak wavelength by regulating the proportion of composing of nitride-based semiconductor to determine from the light having active layer 25 to send.Particularly, in this embodiment, active layer 25 is had to comprise AlGaN, to send the light of the peak wavelength had in UV wave band.

Reflecting electrode 30 is arranged on multiple table top M respectively to form the ohmic contact with the second conductive-type semiconductor layer 27.As shown in reference to Figure 11 a and Figure 11 b, reflecting electrode 30 can comprise reflector 28 and barrier layer 29, and barrier layer 29 can cover upper surface and the side surface in reflector 28.

Current extending 33 covers multiple table top M and the first conductive-type semiconductor layer 23.Current extending 33 has the opening 33a be arranged on above each table top M, thus reflecting electrode 30 is exposed by opening 33a.Current extending 33 is also formed with the ohmic contact of the first conductive-type semiconductor layer 23 and insulate with multiple table top M.Current extending 33 can comprise the reflective metals of such as Al.

Current extending 33 insulate with multiple table top M by lower insulating barrier 31.Such as, lower insulating barrier 31 can be placed between multiple table top M and current extending 33, insulate to make current extending 33 and multiple table top M.In addition, lower insulating barrier 31 can have be arranged on each table top M upper region in reflecting electrode 30 is exposed by it opening 31b, and exposed the opening 31a of the first conductive-type semiconductor layer 23 by it.Current extending 33 is connected to the first conductive-type semiconductor layer 23 by the opening 31a of lower insulating barrier 31.The opening 31b of lower insulating barrier 31 has the area less than the opening 33a of current extending 33, and is all exposed by opening 33a.

Upper insulating barrier 35 covers current extending 33 at least partially.Upper insulating barrier 35 has the opening 35b exposing reflecting electrode 30.In addition, upper insulating barrier 35 can have the opening 35a exposing current extending 33.Upper insulating barrier 35 can cover the sidewall of the opening 33a of current extending 33.

First pad 37a can be arranged on current extending 33, and is such as connected to current extending 33 by the opening 35a of upper insulating barrier 35.Second pad 37b is connected to the reflecting electrode 30 that opening 35b exposes.

According to the utility model, current extending 33 covers the almost Zone Full of the first conductive-type semiconductor layer between table top M and table top M.Therefore, current extending 33 can make electric current easily be expanded by it.

In addition, current extending 33 comprises the reflective metal layer of such as Al, and lower insulating barrier is formed by insulative reflective layer, thus current extending 33 or lower insulating barrier 31 can reflect not by the light that reflecting electrode 30 reflects, and improve light extraction efficiency thus.

Although the light-emitting diode illustrated above 100 can be used in the utility model, the utility model is not limited thereto.

Turn back to reference to Fig. 1 a and Fig. 1 b, transparency carrier 21 comprises at least two kinds of different convex-concave patterns 120,130.Convex-concave pattern 120,130 can comprise the first convex-concave pattern 120 and the second convex-concave pattern 130.

First convex-concave pattern 120 and the second convex-concave pattern 130 can be formed on the upper surface of transparency carrier 21.First convex-concave pattern 120 can comprise projection 121 and depression the 123, second convex-concave pattern 130 also can comprise projection 131 and depression 133.

As shown in Figure 1a, in the first convex-concave pattern 120 and the second convex-concave pattern 130 central area that can be separately positioned on the upper surface of transparency carrier 21 and peripheral region.Especially, the upper surface of transparency carrier 21 can comprise first area and second area, and wherein, first area can be restricted to the region of the centre of the upper surface at transparency carrier 21, and second area can be restricted to the region surrounding first area.Therefore, the first convex-concave pattern 120 and the second convex-concave pattern 130 can be arranged in first area and second area.

The projection 131 of comparable second convex-concave pattern 130 of projection 121 of the first convex-concave pattern 120 is large.Such as, as illustrated in figs. ia and ib, the projection 121 of the first convex-concave pattern 120 and the projection 131 of the second convex-concave pattern 130 can be formed with hemisphere, and the diameter of the comparable projection of the diameter of projection 121 131 is large.

Because convex-concave pattern 120,130 is formed on the upper surface of transparency carrier 21, so total reflection ratio can be reduced when the upper surface by luminescent device sends the light exported from ray structure 110.In addition, the light that the upper surface that convex-concave pattern 120,130 can be scattering through transparency carrier 21 sends, luminescent device can have angle pencil of ray angle and uniform intensity of illumination thus.

In addition, the total reflection ratio of the light through first area and second area can be changed according to the size of convex-concave pattern 120,130.Especially, because the first convex-concave pattern 120 has the convex-concave structure larger than the second convex-concave pattern 130, therefore pass the total reflection of the light of second area than the total reflection ratio that can be less than through the light of first area.With regard to this point, increase the amount of the light sent by the peripheral region of the upper surface of transparency carrier 21, thereby increase the amount of the light of the side surface pointing to luminescent device.Therefore, with send the conventional light emitting device of significantly larger light quantity in the lateral direction in the direction ratio perpendicular to its light-emitting area compared with, light quantity larger compared with conventional light emitting device side surface be can be transmitted into according to luminescent device of the present utility model, angle pencil of ray angle and the uniform intensity of illumination under all emission angles be obtained thus.

First convex-concave pattern 120 and the second convex-concave pattern 130 are formed by photoetching and etching.Such as, as shown in Figure 4, by forming etch mask pattern 220,230 on transparency carrier 21, then partly removing transparency carrier 21 by wet etching or dry etching and forming convex-concave pattern 120,130.Etch mask pattern can comprise the first mask pattern 220 and the second mask pattern 230, and the first mask pattern 220 and the second mask pattern 230 can have different pattern forms.When using etch mask pattern 220,230 to stand with making the upper surface portion of transparency carrier 21 to etch as mask, convex-concave pattern 120,130 can be formed as having difformity according to etch mask pattern 220,230, as illustrated in figs. ia and ib.

As mentioned above, gap, size, shape etc. by regulating the shape of etch mask pattern 220,230 to determine convex-concave pattern 120,130.Therefore, it is possible to by means of only regulating the shape of etch mask pattern 220,230 easily control the beam angle of luminescent device and depend on the intensity of illumination of output angle.Such as, thin convex-concave pattern can be formed for the region with relatively low intensity of illumination, and thick convex-concave pattern can be formed for the region with relatively high intensity of illumination, provides the uniform intensity of illumination of luminescent device thus.

Luminescent device also can comprise the antireflection layer (not shown) of upper surface for covering transparency carrier 21 at least in part and/or side surface.Antireflection layer can comprise SiO 2.Antireflection layer can be used to prevent the total reflection of the light sent through transparency carrier 21 and therefore regulates form totally reflected region, determines the beam angle of luminescent device and the uniformity of intensity of illumination thus.Such as, when antireflection layer is formed the side surface only covering transparency carrier 21, the amount of the light of the side surface being emitted to luminescent device can be increased.

Fig. 2 a and Fig. 2 b is plane graph according to the luminescent device of another embodiment of the present utility model and cutaway view respectively.Cutaway view illustrates the section intercepted along the line B-B' illustrated in plan view.

Although substantially similar with the luminescent device shown in Fig. 1 b to reference Fig. 1 a with the luminescent device shown in Fig. 2 b with reference to Fig. 2 a, the shape of the convex-concave pattern between them exists different.Below, mainly difference will be described.

Convex-concave pattern 140,150 comprises the 3rd convex-concave pattern 140 and the 4th convex-concave pattern 150, and the 3rd convex-concave pattern 140 and the 4th convex-concave pattern 150 can have convex heart.3rd convex-concave pattern 140 can be greater than the 4th convex-concave pattern 150.

Because convex-concave pattern 140,150 has convex heart, the luminous power higher than the luminescent device with hemispheric convex-concave pattern 120,130 can be had according to the luminescent device of this embodiment.

By being formed in the convex-concave pattern 140,150 shown in Fig. 2 a and Fig. 2 b to for the method similar with the method for the convex-concave pattern 120,130 shown in Fig. 1 b at Fig. 1 a.But, as shown in Figure 5, can use and have with the etch mask pattern 240,250 of variform shape in the diagram to form convex-concave pattern 140,150.Especially, by forming the masking part of etch mask pattern 240,250 with convex heart, the top then partly being etched transparency carrier 21 by the dry etching of such as reactive ion etching (RIE) provides convex-concave pattern 140,150.

Fig. 3 a and Fig. 3 b is plane graph according to the luminescent device of other embodiment of the present utility model and cutaway view respectively.Cutaway view illustrates the section intercepted along the line C-C' illustrated in plan view.

Although with reference to Fig. 3 a and the luminescent device shown in Fig. 3 b substantially to similar with the luminescent device shown in Fig. 1 b with reference to Fig. 1 a, the difference between them is that the luminescent device of Fig. 3 a and Fig. 3 b comprises three kinds of dissimilar convex-concave patterns 160,170,180.Below, mainly difference will be described.

Transparency carrier 21 comprises at least three kinds of different convex-concave patterns 160,170,180.Convex-concave pattern 160,170,180 can comprise the 5th convex-concave pattern 160, the 6th convex-concave pattern 170 and the 7th convex-concave pattern 180.

5th convex-concave pattern can be formed on the upper surface of transparency carrier 21 to the 7th convex-concave pattern 160,170,180.5th convex-concave pattern 160 can comprise projection 161 and depression the 163, six convex-concave pattern 170 can comprise projection 171 and depression the 173, seven convex-concave pattern 180 can comprise projection 181 and depression 183.

As shown in Figure 3 a, in the central area that the 5th convex-concave pattern 160 and the 7th convex-concave pattern 180 can be separately positioned on the upper surface of transparency carrier 121 and peripheral region, the 6th convex-concave pattern 170 can be placed between the 5th convex-concave pattern 160 and the 7th convex-concave pattern 180.Especially, the upper surface of transparency carrier 21 can comprise first area, second area and the 3rd region, wherein, first area can be restricted to the region in the middle of the upper surface of transparency carrier 21, second area can be restricted to the region surrounding first area, and the 3rd region can be restricted to the region surrounding second area.5th convex-concave pattern to the 7th convex-concave pattern 160,170,180 can be arranged in first area in the 3rd region.

The projection 171 that the projection 161 of the 5th convex-concave pattern 160 can be greater than projection the 171, six convex-concave pattern 170 of the 6th convex-concave pattern 170 can be greater than the projection 181 of the 7th convex-concave pattern 180.That is, according in the luminescent device of this embodiment, convex-concave pattern 160,170,180 can be formed to have the size reduced gradually from central area to peripheral region on the upper surface of transparency carrier 21.Therefore, it is possible to more effectively increase the amount being transmitted into the light of the side of luminescent device.In addition, comparing with the convex-concave pattern of the luminescent device shown in Fig. 1 b with at Fig. 1 a, can more easily regulating beam angle and intensity of illumination by forming convex-concave pattern 160,170,180 in a different manner.

Etch mask pattern 260,270,280 shown in Figure 6 can be used to form the 5th convex-concave pattern to the 7th convex-concave pattern 160,170,180.Because manufacture method is to substantially similar with reference to the manufacture method shown in Fig. 4, therefore by its concrete description of omission.

Although shown transparency carrier 21 in an embodiment there is two or three different convex-concave pattern, it should be understood that the utility model is not limited thereto.On the contrary, there are four kinds or more luminescent devices of planting dissimilar convex-concave pattern also in scope of the present utility model.In addition, formed on a predetermined region continuously although convex-concave pattern is depicted as, convex-concave pattern also can be formed as convex-concave pattern group separated from one another on multiple region.

In addition, although for having hemisphere or convex heart shown in the embodiment of convex-concave pattern shown in reference Fig. 1 a to Fig. 6, convex-concave pattern can have various shape.Such as, convex-concave pattern can have at least one in spherical, conical, conical butt and convex heart.

In addition, although shown a luminescent device in an embodiment to comprise the convex-concave pattern with different size and same shape, dissimilar convex-concave pattern can be formed in a luminescent device.

When not departing from the spirit and scope of claims of the present utility model, various amendment and change can be made to embodiment, and the utility model comprises whole spirit and scope of claims.

Claims (15)

1. have a luminescent device for angle pencil of ray angle and uniform illumination intensity, it is characterized in that, described luminescent device comprises:
Ray structure; And
Transparency carrier, is arranged on ray structure,
Wherein, transparency carrier comprises at least two kinds of different convex-concave patterns, described at least two kinds of different convex-concave patterns comprise and are arranged on the first convex-concave pattern on the upper surface of transparency carrier and the second convex-concave pattern, compared with the second convex-concave pattern, first convex-concave pattern has larger projection, and in the first convex-concave pattern and the second convex-concave pattern central area that is separately positioned on the upper surface of transparency carrier and outer peripheral areas.
2. there is the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 1, it is characterized in that, the upper surface of transparency carrier comprises first area and second area, first area is arranged in the central area of the upper surface of transparency carrier, second area is arranged in the region surrounding first area, and the first convex-concave pattern and the second convex-concave pattern are arranged in first area and second area.
3. have the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 1, it is characterized in that, the first convex-concave pattern and/or the second convex-concave pattern comprise at least two kinds of difform projections.
4. have the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 1, it is characterized in that, the first convex-concave pattern and the second convex-concave pattern comprise the projection of same shape.
5. the luminescent device with angle pencil of ray angle and uniform illumination intensity as described in claim 3 or 4, is characterized in that, the projection of the first convex-concave pattern and/or the second convex-concave pattern has at least one in hemisphere, taper shape, conical butt and convex heart.
6. have the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 1, it is characterized in that, described at least two kinds of different convex-concave patterns also comprise the 3rd convex-concave pattern compared with the second convex-concave pattern with less projection.
7. there is the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 6, it is characterized in that, the upper surface of transparency carrier comprises first area to the 3rd region, first area is arranged in the central area of the upper surface of transparency carrier, second area is arranged in the region surrounding first area, 3rd region is arranged in the region surrounding second area, and the first convex-concave pattern to the 3rd convex-concave pattern is arranged in first area in the 3rd region.
8. have the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 1, it is characterized in that, transparency carrier comprises sapphire substrate.
9. have the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 1, it is characterized in that, described luminescent device also comprises:
First electrode and the second electrode, be arranged on below ray structure.
10. have the luminescent device of angle pencil of ray angle and uniform illumination intensity as claimed in claim 1, it is characterized in that, described luminescent device also comprises:
Antireflection layer, covers the side surface of transparency carrier.
11. luminescent devices as claimed in claim 1 with angle pencil of ray angle and uniform illumination intensity, it is characterized in that, ray structure sends the light of the peak wavelength had in UV wave band.
12. luminescent devices as claimed in claim 1 with angle pencil of ray angle and uniform illumination intensity, it is characterized in that, described ray structure comprises:
First conductive-type semiconductor layer;
Multiple table top, is set to below the first conductive-type semiconductor layer separated from one another, and each table top includes active layer and the second conductive-type semiconductor layer;
Reflecting electrode, is separately positioned on below described multiple table top, and forms ohmic contact with the second conductive-type semiconductor layer; And
Current extending, covers described multiple table top and the first conductive-type semiconductor layer,
Wherein, current extending has and is arranged on below each table top and makes the opening that reflecting electrode is exposed by it, forms the ohmic contact with the first conductive-type semiconductor layer, and insulate with described multiple table top.
13. luminescent devices as claimed in claim 12 with angle pencil of ray angle and uniform illumination intensity, it is characterized in that, described multiple table top has the elongated shape extended parallel to each other along a direction, and the same side of the described multiple table top of the opening of current extending deflection.
14. luminescent devices as claimed in claim 12 with angle pencil of ray angle and uniform illumination intensity, it is characterized in that, described luminescent device also comprises:
Upper insulating barrier, covers current extending at least partially, and described upper insulating barrier has the opening exposing reflecting electrode; And
Second electrode pad, to be arranged on insulating barrier and the reflecting electrode that exposes of the opening being connected to insulating barrier.
15. luminescent devices as claimed in claim 14 with angle pencil of ray angle and uniform illumination intensity, it is characterized in that, described luminescent device also comprises:
First electrode pad, is connected to current extending.
CN201420565607.XU 2013-09-27 2014-09-28 There is the luminescent device of angle pencil of ray angle and uniform illumination intensity CN204243076U (en)

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KR20130115500A KR20150035211A (en) 2013-09-27 2013-09-27 Light emitting device having wide beam angle and uniform intensity of illumination, and method of fabricating the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107359223A (en) * 2017-07-17 2017-11-17 天津三安光电有限公司 Light emitting diode and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107359223A (en) * 2017-07-17 2017-11-17 天津三安光电有限公司 Light emitting diode and preparation method thereof

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