CN204144317U - A kind of light-emitting diode lead frame structure - Google Patents
A kind of light-emitting diode lead frame structure Download PDFInfo
- Publication number
- CN204144317U CN204144317U CN201420695581.0U CN201420695581U CN204144317U CN 204144317 U CN204144317 U CN 204144317U CN 201420695581 U CN201420695581 U CN 201420695581U CN 204144317 U CN204144317 U CN 204144317U
- Authority
- CN
- China
- Prior art keywords
- horizontal bar
- slide glass
- pin
- lead frame
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The utility model relates to the manufacturing technology field of semiconductor electronic component, be specifically related to a kind of light-emitting diode lead frame structure, comprise horizontal bar and lower horizontal bar, lower horizontal bar is connected with many group negative electrode pins and anode pin, the top often organizing negative electrode pin is provided with cathode weld platform, the top often organizing anode pin is provided with slide glass platform, described slide glass platform cross section is trapezoidal, described trapezoidal upper bottom side length is in bottom, described upper horizontal bar is provided with limiting card edge between two adjacent groups pin, described limiting card is that an angle of inclination is arranged along relatively going up horizontal bar, described upper horizontal bar has the font of falling a T reinforcement.By designing upper bottom side length in the trapezoidal slide glass platform of bottom, making can being tightly attached on slide glass platform of whole chip, avoiding chip electrode unsettled, effectively preventing chip electrode sliver in bonding.
Description
Technical field
The utility model relates to the manufacturing technology field of semiconductor electronic component, is specifically related to a kind of light-emitting diode lead frame structure.
Background technology
Due to light-emitting diode there is high power consumption while there is higher calorific value, so need to have the encapsulating structure of metal lead wire frame as light-emitting diode of high thermal conductivity.Common direct insertion light-emitting diode lead frame mainly comprises horizontal bar and lower horizontal bar, lower horizontal bar is connected with many group negative electrode pins and anode pin, the top often organizing negative electrode pin and anode pin is respectively arranged with cathode weld platform and bowl cup, chip to be arranged on bowl cup and to weld, but because bowl cup is depression in prior art, cause shelving rear chip electrode unsettled, this just easily causes chip electrode sliver in bonding, simultaneously often organizing negative electrode pin and anode pin arranges location stuck point, but this mode is located or cause location inaccurate, particularly just cannot meet relatively accurate setting for its position of the location stuck point often organized between negative electrode pin and anode pin itself.
Utility model content
In order to solve the problems of the technologies described above, the utility model provides a kind of light-emitting diode lead frame structure, by designing upper bottom side length in the trapezoidal slide glass platform of bottom, make can being tightly attached on slide glass platform of whole chip, avoid chip electrode unsettled, effectively prevent chip electrode sliver in bonding.
In order to achieve the above object, the technical scheme that the utility model adopts is, a kind of light-emitting diode lead frame structure, comprise horizontal bar and lower horizontal bar, lower horizontal bar is connected with many group negative electrode pins and anode pin, the top often organizing negative electrode pin is provided with cathode weld platform, the top often organizing anode pin is provided with slide glass platform, described slide glass platform cross section is trapezoidal, described trapezoidal upper bottom side length is in bottom, described upper horizontal bar is provided with limiting card edge between two adjacent groups pin, described limiting card is that an angle of inclination is arranged along relatively going up horizontal bar, described upper horizontal bar has the font of falling a T reinforcement.
Further, described angle of inclination is 30-40 degree.
Further, described trapezoidal be right-angled trapezium, its opposing cathode welding bench be right-angle side.One right-angle side is set, facilitates die sinking, also can strengthen the stability of whole slide glass platform simultaneously.
Further, the relatively described slide glass position of platform of described cathode weld platform is provided with L-type welding bench, described L-type welding bench end face flushes with the top of slide glass platform, L-type welding bench is set, can reduce to weld distance, and in encapsulation process, can have more effectively by completely in the material coated for two pins, avoid exposed and cause the fraction defective of whole product to increase.
Further, the surface of described negative electrode pin is provided with the first groove, the surface of described anode pin is provided with the second groove, and described first groove is relative with the second grooved position, by arranging the first groove and the second groove, make often to organize negative electrode pin and anode pin uniform force, mould is prevented to be out of shape often organizing in negative electrode pin and anode pin Punching Process, and the diode product antidetonation after encapsulating and seepage capability are improved greatly, finally contributes to the useful life and the raising job stability that extend diode product.
The utility model is by adopting technique scheme, and compared with prior art, tool has the following advantages:
The utility model in the trapezoidal slide glass platform of bottom by the upper bottom side length of design, is made can being tightly attached on slide glass platform of whole chip, avoids chip electrode unsettled, effectively prevent chip electrode sliver in bonding.The described font of the falling T reinforcement of design can prevent lead frame to be out of shape in Punching Process spacing edge, the harmony and the entirety increasing lead frame is weighed, avoid top-heavy, and the setting font of falling T reinforcement compares other shape die sinkings easily, punch process program is simple.By arranging a limiting card edge be obliquely installed, and limiting card is along being arranged on above horizontal bar, effectively ensure that the accuracy of each limiting card along position, and a card is spacing along carrying out, avoid the position correction of two stuck point be oppositely arranged itself, limit position consistent more accurately and reliably.Thus effectively can prevent the phenomenon occurring inclined support when encapsulating, improve the consistency of product photoelectric parameter performance.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment of the present utility model.
Fig. 2 is the left view of Fig. 1.
Fig. 3 is the diode assembling schematic diagram of the embodiment of utility model.
Embodiment
Now with embodiment, the utility model is further illustrated by reference to the accompanying drawings.
As a specific embodiment, as shown in Figure 1 to Figure 3, a kind of light-emitting diode lead frame structure of the present utility model, comprise horizontal bar 1 and lower horizontal bar 2, lower horizontal bar 2 is connected with many group negative electrode pins 3 and anode pin 4, and the top often organizing negative electrode pin 3 is provided with cathode weld platform, the top often organizing anode pin 4 is provided with slide glass platform 5, described slide glass platform 5 cross section is right-angled trapezium, described trapezoidal upper bottom side length in bottom, its opposing cathode welding bench be right-angle side.One right-angle side is set, facilitates die sinking, also can strengthen the stability of whole slide glass platform 5 simultaneously.By designing upper bottom side length in the trapezoidal slide glass platform 5 of bottom, making can being tightly attached on slide glass platform 5 of whole chip, avoiding chip electrode unsettled, effectively preventing chip electrode sliver in bonding.
Described upper horizontal bar 1 is provided with limiting card along 11 between two adjacent groups pin, and described limiting card is relatively gone up horizontal bar 1 along 11 and is arranged in an angle of inclination, and described angle of inclination is 30-40 degree.By arranging a limiting card be obliquely installed along 11, and limiting card is arranged on above upper horizontal bar 1 along 11, effectively ensure that the accuracy of each limiting card along position, and a card is spacing along carrying out, avoid the position correction of two stuck point be oppositely arranged itself, limit position consistent more accurately and reliably.Thus effectively can prevent the phenomenon occurring inclined support when encapsulating, improve the consistency of product photoelectric parameter performance.
Described upper horizontal bar 1 has the font of falling a T reinforcement 12.The described font of the falling T reinforcement 12 of design can prevent lead frame to be out of shape in Punching Process spacing edge, the harmony and the entirety increasing lead frame is weighed, avoid top-heavy, and the setting font of falling T reinforcement 12 compares other shape die sinkings easily, punch process program is simple.
Described cathode weld platform 3 relatively described slide glass platform 5 position is provided with L-type welding bench 32, described L-type welding bench 32 end face flushes with the top of slide glass platform 5, L-type welding bench 32 is set, can reduce to weld distance, and in encapsulation process, can have more effectively by completely in the material coated for two pins, avoid exposed and cause the fraction defective of whole product to increase.
The surface of described negative electrode pin 3 is provided with the first groove 31, the surface of described anode pin 4 is provided with the second groove 41, and described first groove 31 is relative with the second groove 41 position, by arranging the first groove 31 and the second groove 41, make often to organize negative electrode pin 3 and anode pin 4 uniform force, mould is prevented to be out of shape often organizing in negative electrode pin 3 and anode pin 4 Punching Process, and the diode product antidetonation after encapsulating and seepage capability are improved greatly, finally contributes to the useful life and the raising job stability that extend diode product.
Described lower horizontal bar 2 Anodic pin 4 and the corresponding position of negative electrode pin 3 arrange location hole.
Shown in figure 3, diode chip for backlight unit 6 is shelved on slide glass platform 5, because slide glass platform 5 cross section is right-angled trapezium, described trapezoidal upper bottom side length is in bottom, make can being tightly attached on slide glass platform 5 of whole diode chip for backlight unit 6, avoid chip electrode unsettled, effectively prevent chip electrode sliver in bonding.By gold thread 7, diode chip for backlight unit 6 is connected with the L-type welding bench 32 on negative electrode pin 3.Owing to being provided with L-type welding bench 32, make gold thread 7 Distance Shortened a lot, avoid the long of gold thread 7 and cause winding and bending, the design of L-type welding bench 32 makes the increase of whole solder side many, and can improve welding efficiency.
Although specifically show in conjunction with preferred embodiment and describe the utility model; but those skilled in the art should be understood that; not departing from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (5)
1. a light-emitting diode lead frame structure, it is characterized in that: comprise horizontal bar and lower horizontal bar, lower horizontal bar is connected with many group negative electrode pins and anode pin, the top often organizing negative electrode pin is provided with cathode weld platform, the top often organizing anode pin is provided with slide glass platform, described slide glass platform cross section is trapezoidal, described trapezoidal upper bottom side length is in bottom, described upper horizontal bar is provided with limiting card edge between two adjacent groups pin, described limiting card is that an angle of inclination is arranged along relatively going up horizontal bar, and described upper horizontal bar has the font of falling a T reinforcement.
2. a kind of light-emitting diode lead frame structure according to claim 1, is characterized in that: described angle of inclination is 30-40 degree.
3. a kind of light-emitting diode lead frame structure according to claim 1, is characterized in that: described trapezoidal for right-angled trapezium, its opposing cathode welding bench be right-angle side.
4. a kind of light-emitting diode lead frame structure according to claim 1, is characterized in that: the relatively described slide glass position of platform of described cathode weld platform is provided with L-type welding bench, and described L-type welding bench end face flushes with the top of slide glass platform.
5. a kind of light-emitting diode lead frame structure according to claim 1, it is characterized in that: the surface of described negative electrode pin is provided with the first groove, the surface of described anode pin is provided with the second groove, and described first groove is relative with the second grooved position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420695581.0U CN204144317U (en) | 2014-11-19 | 2014-11-19 | A kind of light-emitting diode lead frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420695581.0U CN204144317U (en) | 2014-11-19 | 2014-11-19 | A kind of light-emitting diode lead frame structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204144317U true CN204144317U (en) | 2015-02-04 |
Family
ID=52420983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420695581.0U Expired - Fee Related CN204144317U (en) | 2014-11-19 | 2014-11-19 | A kind of light-emitting diode lead frame structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204144317U (en) |
-
2014
- 2014-11-19 CN CN201420695581.0U patent/CN204144317U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160113 Address after: 510000 Guangdong city of Guangzhou province Panyu District Shatou street tree East Street No. 23 Ting Gen two floor Patentee after: Guangzhou creates the dawn electronic technology limited liability company Address before: 365400 Ninghua County, Sanming City Province, the town of the town of Jiang Ming Road, No. 58, No. Patentee before: Ma Qiuping |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150204 Termination date: 20161119 |