CN203707117U - High-density integrated lead frame - Google Patents
High-density integrated lead frame Download PDFInfo
- Publication number
- CN203707117U CN203707117U CN201420087837.XU CN201420087837U CN203707117U CN 203707117 U CN203707117 U CN 203707117U CN 201420087837 U CN201420087837 U CN 201420087837U CN 203707117 U CN203707117 U CN 203707117U
- Authority
- CN
- China
- Prior art keywords
- bears
- piece
- lead frame
- framework
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005538 encapsulation Methods 0.000 claims description 14
- 230000010354 integration Effects 0.000 claims description 8
- 241000826860 Trapezium Species 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 21
- 239000000463 material Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The utility model relates to a high-density integrated lead frame. Lower sheet-shaped frames are provided with M*N first bearing blocks (10); upper sheet-shaped frames are provided with second M*N bearing blocks (30); each second bearing block (30) and a sheet-like jumper are integrated with each other so as to form a ladder-shaped structure; each second bearing block (30) includes a jumper end (301) and a connecting end (302); each first bearing block (10) includes a bearing end (101) and a connecting end (102); and the jumper end of the second bearing block (301) overlaps with the bearing end (101) of the first bearing block at a horizontal position, such that a chip bearing cavity used for installing a chip (20) can be formed. According to the high-density integrated lead frame of the utility model, the density of a bearing structure in the lead frame is increased, and production efficiency of products can be improved, and at the same time, the utilization rate of resources can be improved, and production cost can be reduced; and the jumpers are integrated on the lead frame, such that redesign and manufacture of the jumpers are not required, and therefore, production cost can be reduced.
Description
Technical field
The utility model relates to a kind of diode lead framework, particularly a kind of High Density Integration lead frame.
Background technology
Because the lead frame of miscellaneous goods encapsulation is mainly used in hand assembled production, therefore for the ease of hand assembled, current miscellaneous goods encapsulating lead is single design, for example SOD123-FL encapsulation diode lead frame structure is 40*1, production efficiency is low, and it is little that the chip in lead frame bears density of texture, framework utilance is low, consume material.In addition, as shown in Figure 1 and Figure 2, in current SOD123-FL encapsulation diode lead framework or SMA-FL encapsulation diode lead framework, bear structure for the chip that bears diode chip for backlight unit, comprise that first bears piece 1 and second and bear piece 4, diode chip for backlight unit 2 is placed in first one end that bears piece, diode chip for backlight unit bears piece by wire jumper 3 and second and is connected, and that is to say and needs independent designing and making wire jumper to bear piece and be connected to realize diode chip for backlight unit and second, the production cost of raising lead frame.
Utility model content
The purpose of this utility model is: the problem that lead frame density is little, production efficiency is low, cost is high existing for prior art, provides a kind of High Density Integration lead frame.
To achieve these goals, the technical solution adopted in the utility model is:
A kind of High Density Integration lead frame, comprise a framework and lower framework, described lower framework is provided with M × N individual first and bears piece, M and N are the integer that is greater than 1, upper slice framework) be provided with M × N second and bear piece, described second bears piece and the sheet wire jumper formation trapezium structure that becomes one, second bears piece comprises wire jumper end and link, described first bears piece comprises and bears end and link, and the second wire jumper end and first that bears piece bears bearing of piece and holding and overlap and form one at horizontal level and bear chamber for the chip that chip (20) is installed.
According to embodiment, the length of described lead frame is 230mm, width is 80mm, described lower framework is provided with 20 × 20 first and bears piece, upper slice framework is provided with 20 × 20 second and bears piece, and the second wire jumper end and first that bears piece bears chip that bearing of piece form between end, and to bear chamber be that SMA-FL encapsulation diode is with bearing chamber.
According to embodiment, the length of described lead frame is 230mm, width is 80mm, described lower framework is provided with 12 × 24 first and bears piece, upper slice framework is provided with 12 × 24 second and bears piece, and the second wire jumper end and first that bears piece bears chip that bearing of piece form between end, and to bear chamber be that SOD123-FL encapsulation diode is with bearing chamber.
In sum, owing to having adopted technique scheme, the beneficial effects of the utility model are:
1, increase lead frame chips bears the density of structure, improves production efficiency.
2, bear the density increase of structure due to lead frame chips, improved resource utilization, reduced material cost, assemble and reduced human cost by mechanical automation.
3, wire jumper is integrated on lead frame, does not need to redesign and make wire jumper, reduces production costs.
4, wire jumper is integrated on lead frame, has avoided in conventional lead frame wire jumper and frame welding bad and affect product quality.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that conventional lead frame chips bears structure.
Fig. 2 is the front view of Fig. 1.
Fig. 3 is the utility model lead frame schematic diagram (part).
Fig. 4 is the schematic diagram that the utility model lead frame chips bears structure.
Fig. 5 is the front view of Fig. 4.
Mark in figure: sheet framework under 100-, upper framework of 300-, 10-first bears piece, 20-chip, 30-second bears piece, and 101-first bears the end that bears of piece, 102-first bears the link of piece, and 301-second bears the wire jumper end of piece, and 302-second bears the link of piece.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail.
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
With reference to figure 3 to Fig. 5, the High Density Integration lead frame that the utility model provides, it comprises a framework 300 and lower framework 100, lower framework 100 is provided with M × N(M and N is the integer that is greater than 1) individual first bear piece 10, upper slice framework 300 is provided with M × N individual second and bears piece 30, second bears in piece 30 and is integrated with wire jumper, second bears piece 30 and the sheet wire jumper formation trapezium structure that becomes one.Second of trapezium structure bears piece 30 and is divided into wire jumper end 301 and link 302, first bears piece 10 is divided into and bears end 101 and link 102, in upper slice framework, second bears the wire jumper end 301 of piece and overlaps at horizontal level with the first end 101 that bears that bears piece 10 in lower framework, and form one and bear chamber for the chip that chip 20 is installed, upper slice framework 300 is used in conjunction with lower framework 100, first bears piece 10 and second bears piece 30 compositing chips and bears structure, and diode chip for backlight unit is installed on the chip that chip bears in structure and bears in chamber.As shown in Figure 5, chip 20 be installed on first bear piece 10 bear end 101 on, the wire jumper end 301 that chip 20 bears piece by scolding tin and second is connected.
It should be noted that, the lead frame that the utility model provides, in order to realize lead frame chips, to bear density of texture larger, overcome multinomial technical difficulty: (1) adjacent chips bears the setting of structure pitch.Spacing is crossed conference and is caused lead frame utilance low, not can solve the problem that density is little, production efficiency is low; Can not well shear out diode but spacing is too small can cause producing diode chip for backlight unit time, occur a large amount of waste products.(2) mould and production equipment design.The change of lead frame density proposes higher requirement to mould and production equipment, needs redesign, mfg. moulding die and production equipment, causes mould and production equipment manufacture craft to change simultaneously.(3) customization again of production technology.Lead frame density changes and also causes the production technology of plating, welding, the lead frame such as anti-oxidation to change, and need to redesign technological parameter, reformulates the technological process of production.
embodiment 1
The present embodiment provides a kind of SMA-FL encapsulation diode lead frame, the length of lead frame is 230mm, width is 80mm, lower framework of this lead frame is provided with 20 × 20 first and bears piece 10, upper slice framework is provided with 20 × 20 second and bears piece 30, the second and bear piece 30 and the sheet wire jumper formation trapezium structure that becomes one.In upper slice framework, second bears the wire jumper end 301 of piece and overlaps at horizontal level with the first end 101 that bears that bears piece 10 in lower framework, and form a chip and bear chamber, upper slice framework and lower framework are used in conjunction with, SMA-FL encapsulation diode is installed on first and bears the bearing on end 101 of piece 10, and the wire jumper end 301 that chip 20 bears piece by scolding tin and second is connected.Than traditional single (40 × 1, lead frame length is 101.6mm, and width is 8.15mm) SMA-FL encapsulation diode lead frame, has improved chip and bears the density of structure greatly, improve frame material utilance, when enhancing productivity, reduced production cost.
embodiment 2
The present embodiment provides a kind of SOD123-FL encapsulation diode lead frame, the length of lead frame is 230mm, width is 80mm, lower framework of this lead frame is provided with 12 × 24 first and bears piece 10, upper slice framework is provided with 12 × 24 second and bears piece 30, the second and bear piece 30 and the sheet wire jumper formation trapezium structure that becomes one.In upper slice framework, second bears the wire jumper end 301 of piece and overlaps at horizontal level with the first end 101 that bears that bears piece 10 in lower framework, and form a chip and bear chamber, upper slice framework and lower framework are used in conjunction with, SOD123-FL encapsulation diode is installed on first and bears the bearing on end 101 of piece 10, and the wire jumper end 301 that chip 20 bears piece by scolding tin and second is connected.Than traditional single (40 × 1, lead frame length is 100mm, and width is 6.35mm) SOD12-FL encapsulation diode lead frame, has improved chip and bears the density of structure greatly, improve frame material utilance, when enhancing productivity, reduced production cost.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (3)
1. a High Density Integration lead frame, it is characterized in that, comprise a framework (300) and lower framework (100), described lower framework (100) is provided with M × N individual first and bears piece (10), M and N are the integer that is greater than 1, upper slice framework (300) is provided with M × N individual second and bears piece (30), described second bears piece (30) and the sheet wire jumper formation trapezium structure that becomes one, second bears piece (30) comprises wire jumper end (301) and link (302), described first bears piece (10) comprises and bears end (101) and link (102), the end (101) that bears that the second wire jumper end (301) and first that bears piece bears piece overlaps at horizontal level, and form one and bear chamber for the chip that chip (20) is installed.
2. High Density Integration lead frame according to claim 1, it is characterized in that, the length of described lead frame is 230mm, width is 80mm, described lower framework is provided with 20 × 20 first and bears piece (10), upper slice framework is provided with 20 × 20 second and bears piece (30), and the second wire jumper end (301) and first that bears piece bears the chip forming that bears between end (101) of piece, and to bear chamber be that SMA-FL encapsulation diode is with bearing chamber.
3. High Density Integration lead frame according to claim 1, it is characterized in that, the length of described lead frame is 230mm, width is 80mm, described lower framework is provided with 12 × 24 first and bears piece (10), upper slice framework is provided with 12 × 24 second and bears piece (30), and the second wire jumper end (301) and first that bears piece bears the chip forming that bears between end (101) of piece, and to bear chamber be that SOD123-FL encapsulation diode is with bearing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420087837.XU CN203707117U (en) | 2014-02-28 | 2014-02-28 | High-density integrated lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420087837.XU CN203707117U (en) | 2014-02-28 | 2014-02-28 | High-density integrated lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203707117U true CN203707117U (en) | 2014-07-09 |
Family
ID=51057516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420087837.XU Expired - Lifetime CN203707117U (en) | 2014-02-28 | 2014-02-28 | High-density integrated lead frame |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203707117U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789168A (en) * | 2016-05-11 | 2016-07-20 | 山东迪电子科技有限公司 | Jumper wire frame for chip welding of semiconductor device |
| CN113421842A (en) * | 2021-08-23 | 2021-09-21 | 四川旭茂微科技有限公司 | Lead frame wire jumper composite set |
-
2014
- 2014-02-28 CN CN201420087837.XU patent/CN203707117U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789168A (en) * | 2016-05-11 | 2016-07-20 | 山东迪电子科技有限公司 | Jumper wire frame for chip welding of semiconductor device |
| CN113421842A (en) * | 2021-08-23 | 2021-09-21 | 四川旭茂微科技有限公司 | Lead frame wire jumper composite set |
| CN113421842B (en) * | 2021-08-23 | 2021-11-16 | 四川旭茂微科技有限公司 | Lead frame wire jumper composite set |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203707117U (en) | High-density integrated lead frame | |
| CN103464608A (en) | High-speed progressive die for correcting coplanarity of lead frame | |
| CN203170834U (en) | Precise round piece punching chamfering compound die | |
| CN202634883U (en) | Dielectric plate for manufacturing circuit board | |
| CN204189781U (en) | A kind of optocoupler package support | |
| CN202888165U (en) | SOT223 (Small Outline Transistor 223) matrix type lead wire framework capable of improving material utilization rate | |
| CN204090302U (en) | A kind of integrated ultra-thin PCB of height producing LED silk | |
| CN203617344U (en) | Surface mount type LED lead frame | |
| CN203279103U (en) | Novel horn holder | |
| CN203232865U (en) | 18 row lead wire framework | |
| CN204189788U (en) | A kind of SOT23-5L 20 arranges matrix frame structure | |
| CN202239431U (en) | Forging and pressing forming mold for copper strips | |
| CN206806327U (en) | A kind of composite frame structure | |
| CN204315550U (en) | A kind of carrier band of high density typesetting | |
| CN205020609U (en) | Thickness strenghthened type blanking drift | |
| CN205264692U (en) | 15 IDF type SOP8 lead wire frame construction who arranges | |
| CN203631535U (en) | 13-row lead wire framework | |
| CN204668297U (en) | A kind of rectangular array SMBF lead frame | |
| CN206774536U (en) | Novel high-power electric crystal lead frame | |
| CN204216075U (en) | A kind of LED support module | |
| CN202749366U (en) | Bridge type rectifier DF frame | |
| CN203774300U (en) | High-density frame applied in SOD323 semiconductor packaging | |
| CN204130581U (en) | A kind of ultra thin LED support | |
| CN204189789U (en) | A kind of high density LQFP32 integrated circuit packaging lead mount structure | |
| CN105185765A (en) | Array high-density lead frame and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140709 |
|
| CX01 | Expiry of patent term |