CN204119639U - 铁氧体电路板 - Google Patents

铁氧体电路板 Download PDF

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Publication number
CN204119639U
CN204119639U CN201420478031.3U CN201420478031U CN204119639U CN 204119639 U CN204119639 U CN 204119639U CN 201420478031 U CN201420478031 U CN 201420478031U CN 204119639 U CN204119639 U CN 204119639U
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Prior art keywords
elongated slot
wire
substrate
ferrite
circuit plate
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CN201420478031.3U
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English (en)
Inventor
赖威仁
黄志恭
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Ibis Innotech Inc
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Ibis Innotech Inc
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor

Abstract

本实用新型是一种铁氧体电路板，包括一基板以及一导线，该基板是由铁氧体所制成，该基板具有一表面，以及一由该表面凹陷的长槽，该长槽是由一周壁所界定，该周壁的粗糙度Ra为0.1～20μm，该导线充填于该基板的长槽内，因此，该导线不易从该基板上剥离，使该铁氧体电路板的结构更为稳固，此外，该铁氧体电路板更可作为电感使用，使其功能性更加丰富。

Description

铁氧体电路板
技术领域
本实用新型是与电路板有关，特别涉及一种铁氧体电路板，其结构稳固且可作为电感使用。
背景技术
常用的电路板主要包含一绝缘材质的基板，以及附着在该基板表面上的多数导线，在制作过程中，于该基板的表面是先溅镀上一层导电材料(例如镍铬合金)作为种子介质层(seed layer)，再藉由微影制程及电镀将金属材料(例如铜)镀在介质层上而成为该等导线，然后再利用蚀刻方式将该介质层未受导线遮盖而显露在外的部分去除。
然上述方式制成的导线自基板表面凸出，容易受后续电路板制程影响使导线剥离，在蚀刻多余介质层时，介质层也容易被过度侵蚀而剥离，且现今电子组件越趋小型化，导线也随使用需求而越趋细小，使得导线与基板的接触面积越来越小，如此更会降低导线附着于基板的稳定度，再者，由于该导线之宽度小，以溅镀方式形成之导线厚度亦不大，导线的横截面面积有限，因此其所能容许通过之电流亦相当有限。
发明內容
有鉴于上述的缺点，本实用新型的目的在于提供一种铁氧体电路板，其导线与基板的结合结构稳固，且可作为电感使用。
为达上述目的，本实用新型提供的铁氧体电路板包括一基板以及一导线，该基板是由铁氧体所制成，该基板具有一表面，以及一由该表面凹陷的长槽，该长槽是由一周壁所界定，该周壁的粗糙度Ra为0.1～20μm，该导线充填于该基板的长槽内。
由于该导线是完全位于该基板的长槽内，且该长槽周壁具有相当的粗糙度，使该导线与该基板的结合较习知结构稳固，该长槽更具有相当的深度使该导线的横截面面积得以增大，因此该导线能容许较习知为大的电流通过；此外，如将该长槽与该导线呈螺旋形设于该基板上，该铁氧体电路板亦可作为电感使用，使该铁氧体电路板具有多样功能性。
附图说明
图1为本实用新型第一较佳实施例的顶视图；
图2为本实用新型第一较佳实施例的剖视图；
附图标记：
10 铁氧体电路板
20 基板
22 表面
24 长槽
241 周壁
243 底壁
243a 峰点
245 侧壁
30 导线
32 顶面
D 深度
P 假想平面
具体实施例
结合附图列举以下较佳实施例，以对本实用新型的结构及功效进行详细说明，请参阅图1，是本实用新型第一较佳实施例提供的铁氧体电路板10，其具有一基板20以及一导线30。
该基板20是由铁氧体(ferrite)粉末烧结而成，该铁氧体可为锰锌铁氧体、镍锌铁氧体、镍铜锌铁氧体、锰镁锌铁氧体、锰镁铝铁氧体、锰铜锌铁氧体、钴铁氧体或其组合，于其它实施例，该基板20也可由铁氧体以其它方式制成。
如图2所示，该基板20具有一表面22以及一由该表面22凹陷的长槽24，该长槽24是由一周壁241所界定，该周壁241具有一底壁243以及二侧壁245，该周壁241的底壁243与侧壁245表面具有多数起伏且粗糙度Ra为0.1～20μm，该底壁243具有多数峰点243a大致位于一假想平面P，该假想平面P与该表面22约相互平行且间距为D，亦即该长槽24的深度为D，且该深度D可为0.9～70μm。
该导线30的材质为导电性良好的金属，如铜(Cu)、银(Ag)、金(Au)等，该导线30是充填于该基板20的长槽24内，该导线30具有一顶面32大致与该基板20的表面22齐平，换言之，该导线30形状与该基板20的长槽24形状互补，于本实施例中，该长槽24与该导线30系呈螺旋形设于该基板20上，如图1所示，于其它实施例中，该长槽24与该导线30的形状可视情况改变，且该导线30的顶面32可低于或高于该基板20的表面22，另外，该长槽24及该导线30的数量并无限制，可依该铁氧体电路板10的用途而变化。
由于该铁氧体电路板10的导线30是完全位于该基板20的长槽24内而未凸出该基板20的表面，且该长槽24的底壁243与侧壁245皆具有相当的粗糙度(Ra为0.1～20μm)，使该导线30得以稳固地固定于该长槽24中，因此，该导线30与该基板20的结合相当稳固，即使导线很细亦不易剥离。事实上，前述该长槽24的底壁243与侧壁245的粗糙度Ra是以0.3～15μm为较佳的设计，其中又以0.5～10μm尤佳。此外，本实施例的长槽24与导线30是呈螺旋形设于该基板20上，故本实用新型的铁氧体电路板10亦可作为电感使用，使其功能性更为多样，且该长槽24具有相当的深度(D为0.9～70μm)，使该导线30具有相当的厚度，可容许较大的电流通过，亦增加可应用层面的广度。
请再参阅下列表1，是本实用新型根据不同深度D搭配不同粗糙度Ra所提供的实例一至实例六，该等实例的长槽24深度D介于0.9～20μm且长槽24的周壁241粗糙度Ra介于0.3～10μm，其中基板20的长槽24或导线30越靠上侧其宽度越大；各实例皆能让金属稳固地充填于长槽24内而形成完整的导线30。进一步的实验结果显示，长槽24的周壁241粗糙度Ra介于0.1～20μm，长槽24深度D介于1～70μm的条件下，均可于长槽24内形成结构稳固的导线30，相对地，如长槽24深度小于0.9μm，或粗糙度Ra小于0.1μm，则不易形成完整且结构稳固的导线。
表1
本实用新型图2显示的该长槽24，其深度D相对于该基板20的实际厚度来说为极浅，但为了清楚表达本实用新型的技术特征，故深度D于附图中以放大方式呈现，并非依实际比例显示。于其它实施例中，该长槽24的周壁剖面可为半椭圆形、半圆形、不规则形等形状。最后，必须再次说明，本实用新型于前述实施例中所提供的构成组件仅为举例说明，并非用来限制本案的范围，其它等效组件的替代或变化，亦应为本案的申请专利范围所涵盖。

Claims (7)

1.一种铁氧体电路板，其特征在于，包含有：
一基板，是由铁氧体所制成，该基板具有一表面、以及一由该表面凹陷的长槽，该长槽是由一周壁所界定，该周壁的粗糙度Ra为0.1～20μm；以及
一导线，充填于该基板的长槽内。
2.如权利要求1所述铁氧体电路板，其特征在于，该基板的长槽周壁的粗糙度Ra为0.3～15μm。
3.如权利要求1所述铁氧体电路板，其特征在于，该基板的长槽周壁的粗糙度Ra为0.5～10μm。
4.如权利要求1所述铁氧体电路板，其特征在于，该导线具有一顶面实质上与该基板的表面齐平。
5.如权利要求1所述铁氧体电路板，其特征在于，该基板由铁氧体粉末烧结形成。
6.如权利要求1所述铁氧体电路板，其特征在于，该基板的长槽的深度为0.9～70μm。
7.如权利要求1所述铁氧体电路板，其特征在于，该基板的长槽呈螺旋形。
CN201420478031.3U 2013-09-05 2014-08-22 铁氧体电路板 Expired - Fee Related CN204119639U (zh)

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TW102216723 2013-09-05
TW102216723U TWM470379U (zh) 2013-09-05 2013-09-05 陶瓷電路板及具有該陶瓷電路板的ｌｅｄ封裝模組

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JP (1) JP3194261U (zh)
CN (1) CN204119639U (zh)
DE (1) DE202014100619U1 (zh)
TW (1) TWM470379U (zh)

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Publication number Priority date Publication date Assignee Title
CN112466593A (zh) * 2019-09-06 2021-03-09 马勒国际有限公司 扁平线圈载体

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JP2017034150A (ja) * 2015-08-04 2017-02-09 株式会社ダイセル 回路基板とその製造方法

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Publication number Priority date Publication date Assignee Title
CN112466593A (zh) * 2019-09-06 2021-03-09 马勒国际有限公司 扁平线圈载体
CN112466593B (zh) * 2019-09-06 2022-09-20 马勒国际有限公司 扁平线圈载体

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JP3194261U (ja) 2014-11-13
US20150061814A1 (en) 2015-03-05
DE202014100619U1 (de) 2014-06-12
TWM470379U (zh) 2014-01-11

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