CN204111913U - 一种区熔炉反射环 - Google Patents
一种区熔炉反射环 Download PDFInfo
- Publication number
- CN204111913U CN204111913U CN201420575042.3U CN201420575042U CN204111913U CN 204111913 U CN204111913 U CN 204111913U CN 201420575042 U CN201420575042 U CN 201420575042U CN 204111913 U CN204111913 U CN 204111913U
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- CN
- China
- Prior art keywords
- tore
- reflection
- anchor
- annulus
- melting furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004857 zone melting Methods 0.000 title claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000005336 cracking Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420575042.3U CN204111913U (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420575042.3U CN204111913U (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204111913U true CN204111913U (zh) | 2015-01-21 |
Family
ID=52329246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420575042.3U Expired - Lifetime CN204111913U (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204111913U (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104278318A (zh) * | 2014-09-30 | 2015-01-14 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
-
2014
- 2014-09-30 CN CN201420575042.3U patent/CN204111913U/zh not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104278318A (zh) * | 2014-09-30 | 2015-01-14 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
| CN104278318B (zh) * | 2014-09-30 | 2017-06-13 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181106 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200102 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150121 |