CN104278318B - 一种区熔炉反射环 - Google Patents
一种区熔炉反射环 Download PDFInfo
- Publication number
- CN104278318B CN104278318B CN201410525307.3A CN201410525307A CN104278318B CN 104278318 B CN104278318 B CN 104278318B CN 201410525307 A CN201410525307 A CN 201410525307A CN 104278318 B CN104278318 B CN 104278318B
- Authority
- CN
- China
- Prior art keywords
- tore
- reflection
- fixed mount
- annulus
- melting furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004857 zone melting Methods 0.000 title claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000005336 cracking Methods 0.000 abstract description 5
- 239000000498 cooling water Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410525307.3A CN104278318B (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410525307.3A CN104278318B (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104278318A CN104278318A (zh) | 2015-01-14 |
| CN104278318B true CN104278318B (zh) | 2017-06-13 |
Family
ID=52253647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410525307.3A Active CN104278318B (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104278318B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321913A (zh) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | 一种拉制8英寸区熔硅单晶热系统及工艺 |
| CN102534754A (zh) * | 2012-02-29 | 2012-07-04 | 浙江晶盛机电股份有限公司 | 一种改善区熔单晶炉热场的反射环提升装置 |
| CN204111913U (zh) * | 2014-09-30 | 2015-01-21 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
-
2014
- 2014-09-30 CN CN201410525307.3A patent/CN104278318B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321913A (zh) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | 一种拉制8英寸区熔硅单晶热系统及工艺 |
| CN102534754A (zh) * | 2012-02-29 | 2012-07-04 | 浙江晶盛机电股份有限公司 | 一种改善区熔单晶炉热场的反射环提升装置 |
| CN204111913U (zh) * | 2014-09-30 | 2015-01-21 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104278318A (zh) | 2015-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203993613U (zh) | 一种水冷式高温振动试验夹具 | |
| CN103924293B (zh) | 一种底部增强冷却装置及其冷却方法 | |
| CN104278318B (zh) | 一种区熔炉反射环 | |
| CN103769712A (zh) | 一种真空钎焊炉 | |
| CN203810898U (zh) | 一种微波真空热压炉 | |
| CN204111913U (zh) | 一种区熔炉反射环 | |
| CN204120791U (zh) | 一种复合底铝锅 | |
| CN105689429A (zh) | 一种改进的加热炉 | |
| CN102730942A (zh) | 一种浮法玻璃锡槽边部加热器 | |
| CN103338541A (zh) | 一种感应加热晶体炉的节能磁屏蔽装置 | |
| CN203057674U (zh) | 小型医用回旋加速器高频腔水冷回路 | |
| CN204060896U (zh) | 一种铝合金硅油离合器 | |
| CN204251766U (zh) | 一种晶体硅铸锭炉热场的保温结构 | |
| CN205774708U (zh) | 一种连续式铜丝退火机 | |
| CN203653743U (zh) | 新型单晶炉 | |
| CN108588349A (zh) | 一种感应淬火补偿装置 | |
| CN203885339U (zh) | 燃气烧烤炉的金属托板导热结构 | |
| CN203509273U (zh) | 一种垂直式热共晶装置 | |
| MY165871A (en) | Method and apparatus for producing a single crystal | |
| CN202501562U (zh) | 一种电磁采暖壁挂炉的集热器 | |
| CN204806682U (zh) | 一种电加热导热油炉 | |
| CN203972819U (zh) | 低压用石墨坩埚密封结构 | |
| CN203484624U (zh) | 一种新型浮动式喷嘴 | |
| CN203653741U (zh) | 一种用于磁场单晶炉的导流筒结构 | |
| CN209230293U (zh) | 用于高温炉的铜铝结合型防变形炉胆 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181226 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191217 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |