CN102321913A - 一种拉制8英寸区熔硅单晶热系统及工艺 - Google Patents
一种拉制8英寸区熔硅单晶热系统及工艺 Download PDFInfo
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- CN102321913A CN102321913A CN201110306524A CN201110306524A CN102321913A CN 102321913 A CN102321913 A CN 102321913A CN 201110306524 A CN201110306524 A CN 201110306524A CN 201110306524 A CN201110306524 A CN 201110306524A CN 102321913 A CN102321913 A CN 102321913A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004857 zone melting Methods 0.000 title abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 17
- 230000008018 melting Effects 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
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- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 claims description 4
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102560626A (zh) * | 2012-03-10 | 2012-07-11 | 天津市环欧半导体材料技术有限公司 | 一种提高直拉重掺硅单晶径向电阻率均匀性的方法 |
CN103451727A (zh) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | 区熔炉多晶棒保温装置及其保温方法 |
CN103820847A (zh) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | 一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法 |
CN104278318A (zh) * | 2014-09-30 | 2015-01-14 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
CN104540984A (zh) * | 2012-08-02 | 2015-04-22 | 硅电子股份公司 | 通过在熔化区使单晶结晶而制备单晶的装置 |
CN104711664A (zh) * | 2013-12-16 | 2015-06-17 | 有研新材料股份有限公司 | 一种提高大直径区熔硅单晶生产质量的方法 |
US9797062B2 (en) | 2013-04-25 | 2017-10-24 | Zhejiang Jingsheng M & E Co., Ltd | Zone melting furnace thermal field with dual power heating function and heat preservation method |
CN107513760A (zh) * | 2017-09-04 | 2017-12-26 | 青海鑫诺光电科技有限公司 | 一种单晶棒放肩装置及其使用方法 |
CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
US10138573B2 (en) | 2013-04-25 | 2018-11-27 | Zhejiang Jingsheng M & E Co., Ltd | Auxiliary heating device for zone melting furnace and heat preservation method for single crystal rod thereof |
CN114574940A (zh) * | 2022-02-23 | 2022-06-03 | 中国电子科技集团公司第四十六研究所 | 一种拉制六英寸区熔硅单晶的方法及使用的热屏 |
US20230045854A1 (en) * | 2020-01-22 | 2023-02-16 | The Regents Of The University Of Colorado, A Body Corporate | Field-Editing Technology For Quantum Materials Synthesis Using A Magnetic Field Laser Furnace |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1865532A (zh) * | 2006-04-19 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | 区熔硅单晶炉电气控制系统 |
CN1900387A (zh) * | 2005-07-19 | 2007-01-24 | 上海九晶电子材料有限公司 | 一种太阳能级硅单晶用料配方及制备 |
CN1995485A (zh) * | 2006-12-06 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | <110>无位错硅单晶的制造方法 |
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2011
- 2011-10-11 CN CN201110306524.XA patent/CN102321913B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1900387A (zh) * | 2005-07-19 | 2007-01-24 | 上海九晶电子材料有限公司 | 一种太阳能级硅单晶用料配方及制备 |
CN1865532A (zh) * | 2006-04-19 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | 区熔硅单晶炉电气控制系统 |
CN1995485A (zh) * | 2006-12-06 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | <110>无位错硅单晶的制造方法 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102560626A (zh) * | 2012-03-10 | 2012-07-11 | 天津市环欧半导体材料技术有限公司 | 一种提高直拉重掺硅单晶径向电阻率均匀性的方法 |
US9932690B2 (en) | 2012-08-02 | 2018-04-03 | Siltronic Ag | Device for producing a monocrystal by crystallizing said monocrystal in a melting area |
CN104540984B (zh) * | 2012-08-02 | 2017-02-22 | 硅电子股份公司 | 通过在熔化区使单晶结晶而制备单晶的装置 |
EP2880205B1 (de) * | 2012-08-02 | 2016-10-05 | Siltronic AG | Vorrichtung zur herstellung eines einkristalls durch kristallisieren des einkristalls an einer schmelzenzone |
CN104540984A (zh) * | 2012-08-02 | 2015-04-22 | 硅电子股份公司 | 通过在熔化区使单晶结晶而制备单晶的装置 |
CN103820847B (zh) * | 2012-11-16 | 2016-06-15 | 有研半导体材料有限公司 | 一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法 |
CN103820847A (zh) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | 一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法 |
US10138573B2 (en) | 2013-04-25 | 2018-11-27 | Zhejiang Jingsheng M & E Co., Ltd | Auxiliary heating device for zone melting furnace and heat preservation method for single crystal rod thereof |
US9797062B2 (en) | 2013-04-25 | 2017-10-24 | Zhejiang Jingsheng M & E Co., Ltd | Zone melting furnace thermal field with dual power heating function and heat preservation method |
CN103451727B (zh) * | 2013-08-19 | 2016-10-12 | 浙江晶盛机电股份有限公司 | 区熔炉多晶棒保温装置及其保温方法 |
CN103451727A (zh) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | 区熔炉多晶棒保温装置及其保温方法 |
CN104711664A (zh) * | 2013-12-16 | 2015-06-17 | 有研新材料股份有限公司 | 一种提高大直径区熔硅单晶生产质量的方法 |
CN104711664B (zh) * | 2013-12-16 | 2017-09-22 | 有研半导体材料有限公司 | 一种提高大直径区熔硅单晶生产质量的方法 |
CN104278318B (zh) * | 2014-09-30 | 2017-06-13 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
CN104278318A (zh) * | 2014-09-30 | 2015-01-14 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
CN107513760A (zh) * | 2017-09-04 | 2017-12-26 | 青海鑫诺光电科技有限公司 | 一种单晶棒放肩装置及其使用方法 |
US20230045854A1 (en) * | 2020-01-22 | 2023-02-16 | The Regents Of The University Of Colorado, A Body Corporate | Field-Editing Technology For Quantum Materials Synthesis Using A Magnetic Field Laser Furnace |
US11873573B2 (en) * | 2020-01-22 | 2024-01-16 | The Regents Of The University Of Colorado, A Body Corporate | Field-editing technology for quantum materials synthesis using a magnetic field laser furnace |
CN114574940A (zh) * | 2022-02-23 | 2022-06-03 | 中国电子科技集团公司第四十六研究所 | 一种拉制六英寸区熔硅单晶的方法及使用的热屏 |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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