CN104278318A - 一种区熔炉反射环 - Google Patents
一种区熔炉反射环 Download PDFInfo
- Publication number
- CN104278318A CN104278318A CN201410525307.3A CN201410525307A CN104278318A CN 104278318 A CN104278318 A CN 104278318A CN 201410525307 A CN201410525307 A CN 201410525307A CN 104278318 A CN104278318 A CN 104278318A
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- Prior art keywords
- reflection
- tore
- annulus
- zone melting
- melting furnace
- Prior art date
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- Granted
Links
- 238000004857 zone melting Methods 0.000 title claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000005336 cracking Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410525307.3A CN104278318B (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Applications Claiming Priority (1)
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CN201410525307.3A CN104278318B (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
Publications (2)
Publication Number | Publication Date |
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CN104278318A true CN104278318A (zh) | 2015-01-14 |
CN104278318B CN104278318B (zh) | 2017-06-13 |
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Family Applications (1)
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CN201410525307.3A Active CN104278318B (zh) | 2014-09-30 | 2014-09-30 | 一种区熔炉反射环 |
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CN (1) | CN104278318B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102321913A (zh) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | 一种拉制8英寸区熔硅单晶热系统及工艺 |
CN102534754A (zh) * | 2012-02-29 | 2012-07-04 | 浙江晶盛机电股份有限公司 | 一种改善区熔单晶炉热场的反射环提升装置 |
CN204111913U (zh) * | 2014-09-30 | 2015-01-21 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
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2014
- 2014-09-30 CN CN201410525307.3A patent/CN104278318B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102321913A (zh) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | 一种拉制8英寸区熔硅单晶热系统及工艺 |
CN102534754A (zh) * | 2012-02-29 | 2012-07-04 | 浙江晶盛机电股份有限公司 | 一种改善区熔单晶炉热场的反射环提升装置 |
CN204111913U (zh) * | 2014-09-30 | 2015-01-21 | 天津市环欧半导体材料技术有限公司 | 一种区熔炉反射环 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
Also Published As
Publication number | Publication date |
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CN104278318B (zh) | 2017-06-13 |
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Effective date of registration: 20181226 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191217 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |