CN204088316U

CN204088316U - The 360 degree of luminescences of formal dress flip-chip can arbitrarily around LED silk

Info

Publication number: CN204088316U
Application number: CN201420487429.3U
Authority: CN
Inventors: 周有旺; 周造轩; 周红玉
Original assignee: JIANGSU HUAYING GUANGBAO TECHNOLOGY Co Ltd
Current assignee: JIANGSU HUAYING GUANGBAO TECHNOLOGY Co Ltd
Priority date: 2014-08-27
Filing date: 2014-08-27
Publication date: 2015-01-07
Anticipated expiration: 2024-08-27

Abstract

The utility model discloses the 360 degree of luminescences of a kind of formal dress flip-chip can arbitrarily around LED silk, comprise platelet substrate, described platelet substrate covers one deck flexible insulating layer, on described insulating barrier, preparation has connection line, the end positions of described connection line is formed with electrode, described connection line in-between the electrodes position is formed with multiple pad, one packed LED chip is installed between often pair of pad, described packed LED chip is the full angle light extracting LED chip of transparent enclosure, the below correspondence of each described packed LED chip arranges and is used for the bright dipping position of beam projecting.The beneficial effects of the utility model there is provided a kind of LED silk structure of brand new, and achieve high efficiency mass production, and production cost is low.

Description

The 360 degree of luminescences of formal dress flip-chip can arbitrarily around LED silk

Technical field

The utility model relates to LED technology field.

Background technology

LED silk of the prior art, also referred to as LED rod or LED post, need die bond bonding wire on substrate in process of production, positive and negative electrode is separately installed with at the two ends of this substrate, the production process of whole die bond bonding wire is comparatively complicated, be difficult to extensive high efficiency production, easily produce loose contact phenomenon by the connected mode of gold thread between each LED chip in addition or do not weld gold thread phenomenon occur, cause the inefficacy of LED chip.

Summary of the invention

In order to overcome the deficiency that prior art exists, the purpose of this utility model is to provide a kind of brand new and is easy to formal dress flip-chip 360 degree of luminescences of high efficiency mass production can arbitrarily around LED silk and preparation method thereof.

For reaching above object, the utility model provides the 360 degree of luminescences of a kind of formal dress flip-chip can arbitrarily around LED silk, comprise platelet substrate, described platelet substrate covers one deck flexible insulating layer, on described insulating barrier, preparation has connection line, the end positions of described connection line is formed with electrode, described connection line in-between the electrodes position is formed with multiple pad, one packed LED chip is installed between often pair of pad, described packed LED chip is the full angle light extracting LED chip of transparent enclosure, the below correspondence of each described packed LED chip arranges and is used for the bright dipping position of beam projecting.

Further improvement of the utility model is, the described transparent state of flexible insulating layer, position corresponding with each packed LED chip in described platelet substrate arranges hollow out position.

Further improvement of the utility model is, the below of each described packed LED chip all offers a light hole, described packed LED chip just facing to described light hole bright dipping.

Further improvement of the utility model is, the below of described platelet substrate is also coated with the second insulating barrier.

Further improvement of the utility model is, described flexible insulating layer, the second insulating barrier are integrally coated on the surface of described platelet substrate.

Further improvement of the utility model is, the intensity of the second described insulating barrier is greater than the intensity of described flexible insulating layer.

The beneficial effects of the utility model optimize product structure, and achieve high efficiency mass production, production cost is lower.

Accompanying drawing explanation

Accompanying drawing 1 is the cutaway view according to LED silk of the present utility model;

Accompanying drawing 2 is the schematic front view according to LED silk of the present utility model;

Accompanying drawing 3 is to figure 5 illustrates according to preparation method of the present utility model.

Embodiment

Below preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection range of the present utility model.

See accompanying drawing 1 with shown in accompanying drawing 2, for can arbitrarily around the structural representation of the embodiment of LED silk LED support according to formal dress flip-chip of the present utility model 360 degree of luminescences, comprise platelet substrate 1, platelet substrate 1 covers one deck flexible insulating layer 2, the below of platelet substrate 1 is also coated with the second insulating barrier 8, flexible insulating layer 2, second insulating barrier 8 is integrally coated on the surface of platelet substrate 1, and the intensity of the second insulating barrier 8 is greater than the intensity of flexible insulating layer 2 to play main support effect, flexible insulating layer 2, a kind of structure of sandwich is formed between second insulating barrier 8 and platelet substrate 1, platelet substrate 1 can adopt tinsel, potsherd, sapphire glass sheet, when adopting tinsel, preferred Copper Foil or aluminum foil material, mainly play excellent radiating effect and bent effect, the soft or hard degree flexible insulating layer 2 of filament bar can be adjusted by the material thickness changing platelet substrate 1, second insulating barrier 8 is made up of the exotic material tolerating the highest 800 degrees Celsius.

On insulating barrier 2, preparation has connection line 3, connection line 3 can be prepared from by the mode of mask etch, the technique of photoresist in semiconductor technology, the light shield etching of such as excuting a law, adopts the structure similar with printed circuit that addition or subtractive processes are prepared from.The end positions of connection line 3 is formed with electrode 4, for being connected with power supply or being interconnected, connection line 3 between the electrodes 4 position is formed with multiple pad 5, one packed LED chip 6 is installed between often pair of pad 5, packed LED chip 6 is the full angle light extracting LED chip of transparent enclosure, the below of each packed LED chip 6 all offers a light hole 7, packed LED chip 6 just facing to light hole 7 bright dipping.It is pointed out that the packed LED chip 6 adopted in the utility model, the welding pin of packed LED chip 6 is positioned at towards the position of light hole 7 one side, positive cartridge chip can be allowed like this with the ease of use of flip-chip, reduce production cost; The size of the welding pin of packed LED chip 6 can be prepared into more conventional bigger, and can one larger than another.

Shown in accompanying drawing 3 to accompanying drawing 5, providing the 360 degree of luminescences of a kind of formal dress flip-chip herein arbitrarily around the preparation method of LED silk, can comprise the steps:

S1: the platelet substrate 1 that whole piece is provided;

S2: prepare flexible insulating layer 2 in platelet substrate 1, prepares the second insulating barrier 8 below platelet substrate 1;

S3: go out as shown in Figure 3, flexible insulating layer 2 makes connection line 3, makes electrode 4, connection line 3 between the electrodes 4 prepares multiple pad 5 in the end positions of connection line 3; And go out as shown in Figure 4, between often pair of pad 5, set out unthreaded hole 7;

S4: install packed LED chip 6 between often pair of pad 5, on pad by can tolerate 1000 degree of high temperature solder(ing) paste adopt die bond weldering mode realize, packed LED chip 6 just facing to light hole 7 bright dipping;

S5: the finished product of the full wafer in accompanying drawing 5 is divided into multiple filament monomer as shown in Figure 2.

It is to be noted, in another embodiment of the present utility model, flexible insulating layer 2, second insulating barrier 8 is made up of transparent materials such as ceramic membrane coatings, and the corresponding position of the below of each packed LED chip 6 is provided with the position of hollow out in platelet substrate 1, so just the outgoing that perforate also can realize light can be set to insulating barrier.

In order to realize above structure, its preparation adjusts as follows:

S1: provide whole piece platelet substrate 1, platelet substrate 1 arranges multiple light hole 7;

S2: prepare flexible insulating layer 2 in platelet substrate 1;

S3: make connection line 3 on flexible insulating layer 2, makes electrode 4 in the end positions of connection line 3, multiple pad 5 prepared by connection line 3 between the electrodes 4 and make to have a light hole 7 between often pair of pad 5;

S4: install packed LED chip 6 between often pair of pad 5, packed LED chip 6 just facing to light hole 7 bright dipping;

S5: be divided into multiple filament monomer.

Above execution mode is only for illustrating technical conceive of the present utility model and feature; its object is to allow person skilled in the art understand content of the present utility model and to be implemented; can not limit protection range of the present utility model with this, all equivalences done according to the utility model Spirit Essence change or modification is all encompassed in protection range of the present utility model.

Claims

1. a formal dress flip-chip 360 degree of luminescences can arbitrarily around LED silk, it is characterized in that: comprise platelet substrate (1), described platelet substrate (1) is upper covers one deck flexible insulating layer (2), the upper preparation of described insulating barrier (2) has connection line (3), the end positions of described connection line (3) is formed with electrode (4), described connection line (3) position between electrode (4) is formed with multiple pad (5), between often pair of pad (5), a packed LED chip (6) is installed, the full angle light extracting LED chip that described packed LED chip (6) is transparent enclosure, the below correspondence of each described packed LED chip (6) arranges and is used for the bright dipping position of beam projecting.

2. formal dress flip-chip according to claim 1 360 degree of luminescences can arbitrarily around LED silk, it is characterized in that: described flexible insulating layer (2) transparent state, the upper position corresponding with each packed LED chip (6) of described platelet substrate (1) arranges hollow out position.

3. formal dress flip-chip according to claim 1 360 degree of luminescences can arbitrarily around LED silk, it is characterized in that: the below of each described packed LED chip (6) all offers a light hole (7), described packed LED chip (6) just facing to described light hole (7) bright dipping.

4. formal dress flip-chip according to claim 1 360 degree of luminescences arbitrarily around LED silk, can is characterized in that: the below of described platelet substrate (1) is also coated with the second insulating barrier (8).

5. formal dress flip-chip according to claim 4 360 degree of luminescences arbitrarily around LED silk, can is characterized in that: described flexible insulating layer (2), the second insulating barrier (8) are integrally coated on the surface of described platelet substrate (1).

6. formal dress flip-chip according to claim 5 360 degree of luminescences arbitrarily around LED silk, can is characterized in that: the intensity of described the second insulating barrier (8) is greater than the intensity of described flexible insulating layer (2).