CN105226176A - Cover brilliant high temperature resistant PI film printing opacity reelability filament and preparation method thereof - Google Patents
Cover brilliant high temperature resistant PI film printing opacity reelability filament and preparation method thereof Download PDFInfo
- Publication number
- CN105226176A CN105226176A CN201510521678.9A CN201510521678A CN105226176A CN 105226176 A CN105226176 A CN 105226176A CN 201510521678 A CN201510521678 A CN 201510521678A CN 105226176 A CN105226176 A CN 105226176A
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- CN
- China
- Prior art keywords
- printing opacity
- temperature
- resistant
- led
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/002—Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Abstract
The invention discloses one and cover brilliant high temperature resistant PI film printing opacity reelability filament, comprise platelet substrate (1) and printing opacity high-temperature-resistant layer (2), platelet substrate (1) is cohered or is pressed on printing opacity high-temperature-resistant layer (2), printing opacity high-temperature-resistant layer (2) comprises basic unit, exotic material layer, light adjustment layer, exotic material layer is made up of polyimides PI, printing opacity high-temperature-resistant layer (2) there is connection line (3) by the preparation of etching etching process, the end positions of connection line (3) is formed with electrode (4), connection line (3) position between electrode (4) is formed with multiple pad (5), flip LED chips (6) is welded between often pair of pad (5), flip LED chips (6) there is fluorescent glue (11).The invention has the beneficial effects as follows optimize product structure, versatility is wide, matrix is soft better, can realize the filament body of various shape, product printing opacity and high temperature resistant.
Description
Technical field
The present invention relates to LED technology field.
Background technology
LED trichocyst needs in cell-shell, fill heat radiation gas in process of production, needs glass cell-shell to be heated to higher temperature to form sealing, thus proposes new requirement to the resistance to elevated temperatures of LED strand.
Summary of the invention
In order to overcome the deficiency that prior art exists, the object of the present invention is to provide and a kind ofly novel cover brilliant high temperature resistant PI film printing opacity reelability filament.
For reaching above object, the invention provides one and cover brilliant high temperature resistant PI film printing opacity reelability filament, comprise platelet substrate and printing opacity high-temperature-resistant layer, described platelet substrate is cohered or is pressed on described printing opacity high-temperature-resistant layer, described printing opacity high-temperature-resistant layer comprises basic unit, exotic material layer, light adjustment layer, described exotic material layer is made up of polyimides PI, described platelet substrate there is connection line by the preparation of etching etching process, the end positions of described connection line is formed with electrode, described connection line in-between the electrodes position is formed with multiple pad, flip LED chips is fixed by SMT technique between often pair of pad, flip LED chips there is fluorescent glue.
Further improvement of the present invention is, described flip LED chips is the full angle light extracting LED chip of transparent enclosure.
Further improvement of the present invention is, the described integral thickness comprising platelet substrate and printing opacity high-temperature-resistant layer is 0.01mm-10mm.
According to a further aspect in the invention, provide and a kind of there is the above-mentioned LED bulb covering brilliant high temperature resistant PI film printing opacity reelability filament, comprise cell-shell, lamp holder, power circuit and many LED strand unit, each described LED strand unit two ends are provided with for conducting electricity the splicing ear connected, each described LED strand unit comprises platelet substrate and printing opacity high-temperature-resistant layer, described platelet substrate is cohered or is pressed on described printing opacity high-temperature-resistant layer, described printing opacity high-temperature-resistant layer comprises basic unit, exotic material layer, light adjustment layer, described exotic material layer is made up of polyimides PI, described platelet substrate there is connection line by the preparation of etching etching process, the end positions of described connection line is formed with electrode, described connection line in-between the electrodes position is formed with multiple pad, flip LED chips is fixed by SMT technique between often pair of pad, flip LED chips there is fluorescent glue.
Further improvement of the present invention is, the length of each described LED strand unit is 1mm-1000mm, and width is 0.1mm-50mm.
Further improvement of the present invention is, also comprises the light adjusting circuit for adjusting LED strand unit light intensity.
Further improvement of the present invention is, described splicing ear comprises conductive hook mechanism or the socket mechanism of the electrode of the end being installed on LED strand unit.
Further improvement of the present invention is, is filled with heat radiation gas in described cell-shell.
According to a further aspect in the invention, providing a kind of preparation method for the preparation of covering brilliant high temperature resistant PI film printing opacity reelability filament as above, comprising the steps:
S1: whole piece platelet substrate is provided;
S2: by described platelet substrate by cohering or being pressed on described printing opacity high-temperature-resistant layer, described printing opacity high-temperature-resistant layer comprises basic unit, exotic material layer, light adjustment layer, and described exotic material layer is made up of polyimides PI;
S3: make printed wire by etching etching process in described platelet substrate, makes electrode in the end positions of described printed wire, the printed wire between described electrode prepares multiple pad;
S4: fix flip LED chips by SMT technique between often pair of pad, flip LED chips puts fluorescent glue;
S5: be divided into multiple LED strand unit.
The invention has the beneficial effects as follows optimize product structure, versatility is wide, matrix is soft better, can realize the filament body of various shape, product printing opacity and high temperature resistant.
Accompanying drawing explanation
Accompanying drawing 1 is according to the cross-sectional schematic covering brilliant high temperature resistant PI film printing opacity reelability filament of the present invention;
Accompanying drawing 2 is according to the schematic front view covering brilliant high temperature resistant PI film printing opacity reelability filament of the present invention;
Accompanying drawing 3 is according to the embodiment of LED bulb containing covering brilliant high temperature resistant PI film printing opacity reelability filament of the present invention;
Accompanying drawing 4 and accompanying drawing 5 are that the LED bulb containing covering brilliant high temperature resistant PI film printing opacity reelability filament according to the present invention derives similar fashion;
Accompanying drawing 6 covers the preparation method of brilliant high temperature resistant PI film printing opacity reelability filament to fig. 8 depicts.
Embodiment
Below preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
See accompanying drawing 1 with shown in accompanying drawing 2, eachly cover brilliant high temperature resistant PI film printing opacity reelability filament and comprise platelet substrate 1 and printing opacity high-temperature-resistant layer 2, platelet substrate 1 is cohered or is pressed on printing opacity high-temperature-resistant layer 2, and the integral thickness of platelet substrate 1 and printing opacity high-temperature-resistant layer 2 is 0.01mm-10mm.
Platelet substrate 1 can adopt tinsel, preferred Copper Foil or aluminum foil material, mainly play excellent radiating effect and bent effect, printing opacity high-temperature-resistant layer 2 comprises basic unit, exotic material layer, light adjustment layer, on printing opacity high-temperature-resistant layer 2, preparation has printed wire 3, the end positions of printed wire 3 is formed with electrode 4, printed wire 3 between the electrodes 4 position is formed with multiple pad 5, pad 5 is arranged solder 13, flip LED chips 6 is fixed by SMT technique between often pair of pad 5, flip LED chips 6 is the full angle light extracting LED chip of transparent enclosure, flip LED chips 6 there is fluorescent glue 11.
It should be noted that, basic unit preferably adopts high transmitting substrate, exotic material layer preferably adopts polyimides PI to make, the transmitance of its visible ray is more than 90%, heatproof is more than 250 degree, and in addition, light adjustment layer can correct according to LED chip luminescence is photochromic, can be set to different colours as required, fluorescent material also can be added to correct for emergent light in its inside.
Shown in accompanying drawing 3 to accompanying drawing 5, present embodiment illustrates a kind of LED bulb containing covering brilliant high temperature resistant PI film printing opacity reelability filament, comprise cell-shell 10, lamp holder 9, power circuit 8 and many LED strand unit 7, each LED strand unit 7 two ends are provided with for conducting electricity the splicing ear 12 connected, each LED strand unit 7 comprises platelet substrate 1 and printing opacity high-temperature-resistant layer 2, platelet substrate 1 is cohered or is pressed on printing opacity high-temperature-resistant layer 2, printing opacity high-temperature-resistant layer 2 comprises basic unit, exotic material layer, light adjustment layer, on printing opacity high-temperature-resistant layer 2, preparation has printed wire 3, the end positions of printed wire 3 is formed with electrode 4, printed wire 3 between the electrodes 4 position is formed with multiple pad 5, between often pair of pad 5, flip LED chips 6 is installed, in Figure 5, LED strand unit 7 can also be prepared becomes toroidal.
Cell-shell 10 inside is filled with heat radiation gas, can be G type, C type, S type, A type or PS type, and the diameter of cell-shell 1 is 35mm-125mm, and the length of each LED strand unit 7 is 1mm-1000mm, and width is 0.1mm-50mm.After being installed on lamp holder inside for providing the power circuit 8 of supply voltage current conversion function, entirety is fixedly installed in bottom cell-shell 10, power circuit 8 is also designed with the light adjusting circuit for adjusting LED strand unit 7 luminous intensity.
Splicing ear 12 comprises conductive hook mechanism or the socket mechanism of the electrode 4 of the end being installed on LED strand unit 7, each LED strand unit can be combined into various predetermined moulding, such as, circle in accompanying drawing 3 or the helix moulding in accompanying drawing 4 can also be circle, broken line, wave, heart etc.
Shown in accompanying drawing 6 to accompanying drawing 8, providing a kind of preparation method for the preparation of covering brilliant high temperature resistant PI film printing opacity reelability filament, comprising the steps:
S1: whole piece platelet substrate 1 is provided;
S2: platelet substrate 1 is merged into high-temperature flexible base material by cohering or being pressed on printing opacity high-temperature-resistant layer 2, and printing opacity high-temperature-resistant layer 2 comprises basic unit, exotic material layer, light adjustment layer, and described exotic material layer is made up of polyimides PI; ;
S3: make printed wire 3 in platelet substrate 1, makes electrode 4 in the end positions of printed wire 3, printed wire 3 between the electrodes 4 prepares multiple pad 5;
S4: encapsulate flip LED chips 6 between often pair of pad 5, flip LED chips 6 puts fluorescent glue 11;
S5: be divided into multiple LED strand unit 7.
Printed wire 3 can design according to different electrical requirements, and the technique of the photoresist in semiconductor technology of such as excuting a law, light shield etching, adopts the structure similar with printed circuit that addition or subtractive processes are prepared from.
Above execution mode is only for illustrating technical conceive of the present invention and feature; its object is to allow person skilled in the art understand content of the present invention and to be implemented; can not limit the scope of the invention with this, all equivalences done according to Spirit Essence of the present invention change or modification is all encompassed in protection scope of the present invention.
Claims (9)
1. one kind covers brilliant high temperature resistant PI film printing opacity reelability filament, it is characterized in that: comprise platelet substrate (1) and printing opacity high-temperature-resistant layer (2), described platelet substrate (1) is cohered or is pressed on described printing opacity high-temperature-resistant layer (2), described printing opacity high-temperature-resistant layer (2) comprises basic unit, exotic material layer, light adjustment layer, described exotic material layer is made up of polyimides PI, described platelet substrate (1) there is connection line (3) by the preparation of etching etching process, the end positions of described connection line (3) is formed with electrode (4), described connection line (3) position between electrode (4) is formed with multiple pad (5), flip LED chips (6) is fixed by SMT technique between often pair of pad (5), flip LED chips (6) there is fluorescent glue (11).
2. according to claim 1ly cover brilliant high temperature resistant PI film printing opacity reelability filament, it is characterized in that: the full angle light extracting LED chip that described flip LED chips (6) is transparent enclosure.
3. according to claim 1ly cover brilliant high temperature resistant PI film printing opacity reelability filament, it is characterized in that: the described integral thickness comprising platelet substrate (1) and printing opacity high-temperature-resistant layer (2) is 0.01mm-10mm.
4. one kind comprises the LED bulb covering brilliant high temperature resistant PI film printing opacity reelability filament as described in any one of claims 1 to 3, it is characterized in that: comprise cell-shell (10), lamp holder (9), power circuit (8) and many LED strand unit (7), each described LED strand unit (7) two ends are provided with for conducting electricity the splicing ear (12) connected, each described LED strand unit (7) comprises platelet substrate (1) and printing opacity high-temperature-resistant layer (2), described platelet substrate (1) is cohered or is pressed on described printing opacity high-temperature-resistant layer (2), described printing opacity high-temperature-resistant layer (2) comprises basic unit, exotic material layer, light adjustment layer, described exotic material layer is made up of polyimides PI, described platelet substrate (1) there is connection line (3) by the preparation of etching etching process, the end positions of described connection line (3) is formed with electrode (4), described connection line (3) position between electrode (4) is formed with multiple pad (5), flip LED chips (6) is fixed by SMT technique between often pair of pad (5), flip LED chips (6) there is fluorescent glue (11).
5. LED bulb according to claim 4, is characterized in that: the length of each described LED strand unit (7) is 1mm-1000mm, and width is 0.1mm-50mm.
6. LED bulb according to claim 4, is characterized in that: also comprise the light adjusting circuit for adjusting LED strand unit (7) light intensity.
7. LED bulb according to claim 4, is characterized in that: described splicing ear (12) comprises conductive hook mechanism or the socket mechanism of the electrode (4) of the end being installed on LED strand unit (7).
8. LED bulb according to claim 4, is characterized in that: be filled with heat radiation gas in described cell-shell (10).
9., for the preparation of the preparation method covering brilliant high temperature resistant PI film printing opacity reelability filament as described in Claims 1-4, it is characterized in that: comprise the steps:
S1: whole piece platelet substrate (1) is provided;
S2: by described platelet substrate (1) by cohering or being pressed on described printing opacity high-temperature-resistant layer (2), described printing opacity high-temperature-resistant layer (2) comprises basic unit, exotic material layer, light adjustment layer, and described exotic material layer is made up of polyimides PI;
S3: make printed wire (3) by etching etching process in described platelet substrate (1), electrode (4) is made, the multiple pad of the upper preparation of the printed wire (3) between described electrode (4) (5) in the end positions of described printed wire (3);
S4: fix flip LED chips (6) by SMT technique between often pair of pad (5), at flip LED chips (6) upper some fluorescent glue (11);
S5: be divided into multiple LED strand unit (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510521678.9A CN105226176A (en) | 2015-08-25 | 2015-08-25 | Cover brilliant high temperature resistant PI film printing opacity reelability filament and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510521678.9A CN105226176A (en) | 2015-08-25 | 2015-08-25 | Cover brilliant high temperature resistant PI film printing opacity reelability filament and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105226176A true CN105226176A (en) | 2016-01-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510521678.9A Pending CN105226176A (en) | 2015-08-25 | 2015-08-25 | Cover brilliant high temperature resistant PI film printing opacity reelability filament and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105226176A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106151904A (en) * | 2016-08-24 | 2016-11-23 | 胡溢文 | A kind of LED winding filament and preparation technology thereof |
| CN107420766A (en) * | 2016-05-24 | 2017-12-01 | 浙江亿米光电科技有限公司 | A kind of bulb for being provided with flexible LED filament and flexible LED filament preparation method |
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| CN103635010A (en) * | 2012-08-28 | 2014-03-12 | 昆山雅森电子材料科技有限公司 | Covering film with performances of heating conduction and electromagnetic shielding |
| CN203797440U (en) * | 2014-01-27 | 2014-08-27 | 东莞市田津电子科技有限公司 | Light body LED soft lamp strip and equipment for manufacturing the same |
| CN104282831A (en) * | 2014-09-24 | 2015-01-14 | 惠州市英吉尔光电科技有限公司 | LED packaging structure and technique |
| EP2865702A1 (en) * | 2013-06-26 | 2015-04-29 | Toray Industries, Inc. | Polyimide precursor, polyimide, flexible substrate using same, color filter and manufacturing method therefor, and flexible display device |
| CN205092264U (en) * | 2015-08-25 | 2016-03-16 | 江苏华英光宝科技股份有限公司 | Cover brilliant high temperature resistant PI film printing opacity reelability filament |
-
2015
- 2015-08-25 CN CN201510521678.9A patent/CN105226176A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103635010A (en) * | 2012-08-28 | 2014-03-12 | 昆山雅森电子材料科技有限公司 | Covering film with performances of heating conduction and electromagnetic shielding |
| EP2865702A1 (en) * | 2013-06-26 | 2015-04-29 | Toray Industries, Inc. | Polyimide precursor, polyimide, flexible substrate using same, color filter and manufacturing method therefor, and flexible display device |
| CN203797440U (en) * | 2014-01-27 | 2014-08-27 | 东莞市田津电子科技有限公司 | Light body LED soft lamp strip and equipment for manufacturing the same |
| CN104282831A (en) * | 2014-09-24 | 2015-01-14 | 惠州市英吉尔光电科技有限公司 | LED packaging structure and technique |
| CN205092264U (en) * | 2015-08-25 | 2016-03-16 | 江苏华英光宝科技股份有限公司 | Cover brilliant high temperature resistant PI film printing opacity reelability filament |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107420766A (en) * | 2016-05-24 | 2017-12-01 | 浙江亿米光电科技有限公司 | A kind of bulb for being provided with flexible LED filament and flexible LED filament preparation method |
| CN106151904A (en) * | 2016-08-24 | 2016-11-23 | 胡溢文 | A kind of LED winding filament and preparation technology thereof |
| WO2018035921A1 (en) * | 2016-08-24 | 2018-03-01 | 胡溢文 | Light-emitting diode bulb having windable filament and manufacturing process thereof |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160106 |
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| RJ01 | Rejection of invention patent application after publication |