CN204011457U - 共面电极模拟光电探测器芯片 - Google Patents
共面电极模拟光电探测器芯片 Download PDFInfo
- Publication number
- CN204011457U CN204011457U CN201420451612.8U CN201420451612U CN204011457U CN 204011457 U CN204011457 U CN 204011457U CN 201420451612 U CN201420451612 U CN 201420451612U CN 204011457 U CN204011457 U CN 204011457U
- Authority
- CN
- China
- Prior art keywords
- layer
- photosensitive area
- top layer
- detector chip
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420451612.8U CN204011457U (zh) | 2014-08-12 | 2014-08-12 | 共面电极模拟光电探测器芯片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420451612.8U CN204011457U (zh) | 2014-08-12 | 2014-08-12 | 共面电极模拟光电探测器芯片 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204011457U true CN204011457U (zh) | 2014-12-10 |
Family
ID=52051415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420451612.8U Expired - Fee Related CN204011457U (zh) | 2014-08-12 | 2014-08-12 | 共面电极模拟光电探测器芯片 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN204011457U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104576810A (zh) * | 2014-08-12 | 2015-04-29 | 深圳市芯思杰联邦国际科技发展有限公司 | 共面电极模拟光电探测器芯片及其制作方法 |
CN114242825A (zh) * | 2021-11-12 | 2022-03-25 | 武汉敏芯半导体股份有限公司 | 侧面进光式背光监测光电探测器及其制作方法 |
-
2014
- 2014-08-12 CN CN201420451612.8U patent/CN204011457U/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104576810A (zh) * | 2014-08-12 | 2015-04-29 | 深圳市芯思杰联邦国际科技发展有限公司 | 共面电极模拟光电探测器芯片及其制作方法 |
CN104576810B (zh) * | 2014-08-12 | 2016-04-20 | 深圳市芯思杰联邦国际科技发展有限公司 | 共面电极模拟光电探测器芯片及其制作方法 |
CN114242825A (zh) * | 2021-11-12 | 2022-03-25 | 武汉敏芯半导体股份有限公司 | 侧面进光式背光监测光电探测器及其制作方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104576810B (zh) | 共面电极模拟光电探测器芯片及其制作方法 | |
CN103646997B (zh) | 倏逝波耦合型高速高功率光电探测器的制作方法 | |
CN104576786B (zh) | 新型零伏响应雪崩光电探测器芯片及其制作方法 | |
CN110176507B (zh) | 一种台面pin的钝化结构和光电二极管及其制备方法 | |
US11282977B2 (en) | Silicon carbide detector and preparation method therefor | |
CN107170847A (zh) | 基于AlInAsSb体材料作倍增区的雪崩光电二极管及其制备方法 | |
CN111081792B (zh) | 一种背照射紫外红外双色光电探测器及其制备方法 | |
JPWO2008090733A1 (ja) | 半導体受光素子 | |
CN104617166B (zh) | 基于Si衬底的InGaAs红外探测器及其制备方法 | |
CN109728120A (zh) | 一种高可靠nip结构台面型光电二极管及其制作方法 | |
CN105957918A (zh) | 一种双通道宽光谱探测器及其制备方法 | |
CN110690323B (zh) | 紫外光电探测器的制备方法及紫外光电探测器 | |
CN204011457U (zh) | 共面电极模拟光电探测器芯片 | |
CN204067379U (zh) | 新型零伏响应雪崩光电探测器芯片 | |
CN104992953B (zh) | 基于GaAs的光电集成器件及其制备方法 | |
CN104617184B (zh) | PIN台面型InGaAs红外探测器及其制备方法 | |
CN116565040A (zh) | 高速光电探测器的外延结构 | |
CN103050503B (zh) | 量子阱红外探测器的制作方法 | |
CN108447940A (zh) | 背靠背双吸收硅基光电探测器及制备方法 | |
CN101330058B (zh) | 波导光探测器和异质结双极性晶体管的单片集成方法 | |
WO2020107784A1 (zh) | 一种单向载流子传输光电探测器及其制造方法 | |
CN105405913A (zh) | 一种低暗电流铟镓砷探测器及其制备方法 | |
CN104538478A (zh) | 一种复合钝化膜结构的延伸波长铟镓砷探测器及制备方法 | |
CN205542847U (zh) | 平面双面电极模拟光电探测器芯片 | |
CN105552161B (zh) | 平面双面电极模拟光电探测器芯片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: SHENZHEN PHOGRAIN INTELLIGENT SENSING TECHNOLOGY CO., LTD. Assignor: SHENZHEN PHOGRAIN INTERNATIONAL TECHNOLOGY DEVELOPMENT CO., LTD. Contract record no.: 2015440020353 Denomination of utility model: Coplanar electrode analog photoelectric detector chip and manufacturing method thereof Granted publication date: 20141210 License type: Common License Record date: 20151117 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141210 Termination date: 20160812 |