CN203941944U - A kind of high-power COB encapsulation copper base - Google Patents
A kind of high-power COB encapsulation copper base Download PDFInfo
- Publication number
- CN203941944U CN203941944U CN201420352050.1U CN201420352050U CN203941944U CN 203941944 U CN203941944 U CN 203941944U CN 201420352050 U CN201420352050 U CN 201420352050U CN 203941944 U CN203941944 U CN 203941944U
- Authority
- CN
- China
- Prior art keywords
- copper base
- bonding area
- solder mask
- crystal bonding
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 51
- 239000010949 copper Substances 0.000 title claims abstract description 51
- 238000005538 encapsulation Methods 0.000 title claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims abstract description 34
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000003825 pressing Methods 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 abstract description 11
- 238000003801 milling Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
The utility model relates to a kind of high-power COB encapsulation copper base, formed by substrate and the crystal bonding area that is located at substrate center, described substrate is formed by copper base, insulating barrier and solder mask successively pressing, described copper base central authorities are set to the crystal bonding area of projection shape, the copper base of crystal bonding area surrounding is provided with insulating barrier, insulating barrier is provided with solder mask, and described solder mask is provided with conductive welding disk, and the copper base of described crystal bonding area and solder mask are in same plane.The utility model in following process process, the crystal bonding area that degree of depth of milling is 0.2mm again, the substrate course of processing is simple, can not produce error because of milling crystal bonding area; Because the copper base of crystal bonding area and solder mask, in same level, so after chip package, naked layer and the solder mask on chip side block, have improved at least 5% light efficiency; And encapsulate with fluorescent glue in the later stage, compared with existing substrate, save the encapsulation at protruding copper base place, reduce the consumption of fluorescent glue, reduce production cost.
Description
Technical field
The utility model relates to a kind of high-power COB encapsulation copper base.
Background technology
COB (encapsulation of chip on board chip on board) is one of bare chip mounting technology, normally semiconductor chip handing-over is mounted on circuit base plate in semiconductor packages field, traditional high-power COB encapsulation copper base, by copper base, insulating barrier and solder mask one step press composition, conductive welding disk is set in solder mask, then in the centre of base plate for packaging, adopt the die bond region that degree of depth of numerically-controlled machine tool milling is 0.2mm, then by chip attachment in die bond region, contact with the direct of copper base in order to realize chip, meet the heat radiation requirement of high power light source.But current this board structure, the course of processing is loaded down with trivial details, and milling depth easily produces error, thereby affects the making of follow-up encapsulation; And after chip package, the insulating barrier exceeding on chip side and solder mask part, can affect the light efficiency of chip; When follow-up filling fluorescent glue, be that box dam is set on solder mask, box dam is with interior area filling fluorescent glue, the die bond region after milling, and the later stage encapsulates with fluorescent glue, also relatively wastes fluorescent glue, has increased production cost.
Utility model content
The purpose of this utility model is to overcome the defect that prior art exists, and a kind of high-power COB encapsulation copper base is provided.
The technical scheme that realizes the utility model object is: a kind of high-power COB encapsulation copper base, formed by substrate and the crystal bonding area that is located at substrate center, described substrate is formed by copper base, insulating barrier and solder mask successively pressing, described copper base central authorities are set to the crystal bonding area of projection shape, the copper base of crystal bonding area surrounding is provided with insulating barrier, insulating barrier is provided with solder mask, and described solder mask is provided with conductive welding disk, and the copper base of described crystal bonding area and solder mask are in same plane.
As preferably, the projection of described copper base central authorities exceeds 0.2mm than surrounding copper base.
The utlity model has positive effect: the utility model is that copper base central authorities are directly set to projection shape, pressing insulating barrier and solder mask on the copper base of projection surrounding, solder mask is provided with conductive welding disk, the copper base of solder mask and projection shape is in a horizontal plane, and the copper base of projection shape is crystal bonding area.In following process process, direct pasting chip on crystal bonding area, the crystal bonding area that degree of depth of milling is 0.2mm again, the substrate course of processing is simple, can not produce error because of milling crystal bonding area; Because the copper base of crystal bonding area and solder mask, in same level, so after chip package, naked layer and the solder mask on chip side block, have improved at least 5% light efficiency; And encapsulate with fluorescent glue in the later stage, compared with existing substrate, save the encapsulation at protruding copper base place, reduce the consumption of fluorescent glue, reduce production cost.
Brief description of the drawings
For content of the present utility model is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail, wherein below
Fig. 1 is cross-sectional view of the present utility model;
Fig. 2 is the cross-sectional view of existing COB encapsulation copper base;
Fig. 3 is the cross-sectional view after the utility model packaged chip;
Fig. 4 is the cross-sectional view after existing COB encapsulation copper base packaged chip.
Wherein: 1, copper base, 2, insulating barrier, 3, solder mask, 4, conductive welding disk, 5, crystal bonding area, 6, box dam, 7, fluorescent glue, 8, chip.
Embodiment
As shown in Figure 1, the utlity model has a kind of high-power COB encapsulation copper base, formed by substrate and the crystal bonding area 5 that is located at substrate center, described substrate is formed by copper base 1, insulating barrier 2 and solder mask 3 successively pressing, copper base 1 central authorities are set to the crystal bonding area 5 of projection shape, the projection of copper base 1 central authorities exceeds 0.2mm than surrounding copper base 1, the copper base 1 of crystal bonding area 5 surroundings is provided with insulating barrier 2, insulating barrier 2 is provided with solder mask 3, solder mask 3 is provided with conductive welding disk 4, and copper base 1 and the solder mask 3 of crystal bonding area 5 are in same plane.
As shown in Figure 2,3, 4, the utility model is that copper base 1 central authorities are directly set to projection shape, pressing insulating barrier 2 and solder mask 3 on the copper base 1 of projection surrounding, solder mask 3 is provided with conductive welding disk 4, the copper base 1 of solder mask 3 and projection shape is in a horizontal plane, and the copper base 1 of projection shape is crystal bonding area 5.In following process process, direct pasting chip 8 on crystal bonding area 5, the crystal bonding area 5 that degree of depth of milling is 0.2mm again, the substrate course of processing is simple, can not produce because of milling crystal bonding area 5 error; Because the copper base of crystal bonding area 51 and solder mask 3 are in same level, after chip 8 encapsulation, naked layer 2 and the solder mask 3 on chip 8 sides block, and have improved at least 5% light efficiency; And post-production, box dam 6 is set on solder mask 3, box dam 6 encapsulates with fluorescent glue 7 with interior region, and compared with existing substrate, the utility model has been saved the encapsulation at protruding copper base 1 place, has reduced the consumption of fluorescent glue 7, has reduced production cost.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (2)
1. a high-power COB encapsulation copper base, formed by substrate and the crystal bonding area (5) that is located at substrate center, described substrate is by copper base (1), insulating barrier (2) and solder mask (3) successively pressing form, it is characterized in that: described copper base (1) central authorities are set to the crystal bonding area (5) of projection shape, the copper base (1) of crystal bonding area (5) surrounding is provided with insulating barrier (2), insulating barrier (2) is provided with solder mask (3), described solder mask (3) is provided with conductive welding disk (4), the copper base (1) of described crystal bonding area (5) is in same plane with solder mask (3).
2. the high-power COB encapsulation of one according to claim 1 copper base, is characterized in that: the projection of described copper base (1) central authorities exceeds 0.2mm than surrounding copper base (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420352050.1U CN203941944U (en) | 2014-06-27 | 2014-06-27 | A kind of high-power COB encapsulation copper base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420352050.1U CN203941944U (en) | 2014-06-27 | 2014-06-27 | A kind of high-power COB encapsulation copper base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203941944U true CN203941944U (en) | 2014-11-12 |
Family
ID=51861238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420352050.1U Expired - Lifetime CN203941944U (en) | 2014-06-27 | 2014-06-27 | A kind of high-power COB encapsulation copper base |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203941944U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9907169B1 (en) | 2016-08-30 | 2018-02-27 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Printed circuit board (PCB) and PCB assembly having an encapsulating mold material on a bottom surface thereof and methods for molding an encapsulating mold material on a bottom surface of a PCB |
-
2014
- 2014-06-27 CN CN201420352050.1U patent/CN203941944U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9907169B1 (en) | 2016-08-30 | 2018-02-27 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Printed circuit board (PCB) and PCB assembly having an encapsulating mold material on a bottom surface thereof and methods for molding an encapsulating mold material on a bottom surface of a PCB |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: NANJING SUNFULL ELECTRONIC CIRCUIT Co.,Ltd. Assignor: Li Guihua Contract record no.: 2015320000368 Denomination of utility model: Large power COB (Chip on Board) packaging copper substrate Granted publication date: 20141112 License type: Exclusive License Record date: 20150526 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Large power COB (Chip on Board) packaging copper substrate Effective date of registration: 20160510 Granted publication date: 20141112 Pledgee: Bank of Nanjing, Zhujiang branch, Limited by Share Ltd. Pledgor: Li Guihua Registration number: 2016990000370 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180925 Granted publication date: 20141112 Pledgee: Bank of Nanjing, Zhujiang branch, Limited by Share Ltd. Pledgor: Li Guihua Registration number: 2016990000370 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Large power COB (Chip on Board) packaging copper substrate Effective date of registration: 20180930 Granted publication date: 20141112 Pledgee: Bank of Nanjing Limited by Share Ltd. Nanjing branch Pledgor: Li Guihua Registration number: 2018320000220 |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141112 |