CN203911216U - Laser - Google Patents
Laser Download PDFInfo
- Publication number
- CN203911216U CN203911216U CN201420347906.6U CN201420347906U CN203911216U CN 203911216 U CN203911216 U CN 203911216U CN 201420347906 U CN201420347906 U CN 201420347906U CN 203911216 U CN203911216 U CN 203911216U
- Authority
- CN
- China
- Prior art keywords
- laser
- framework
- diaphragm plate
- expanding lens
- beam expanding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000005086 pumping Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 3
- 230000001459 mortal effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Lasers (AREA)
Abstract
The utility model discloses a laser, comprising a laser frame body, a laser frame body front cover, a laser frame body rear cover, a wedge lens, a reflection prism, a traverse diaphragm, a polaroid, a Q-switching, a holophote unit, a beam expanding lens, a beam expanding lens upper cover, an output mirror, a Nd : YAG crystal, a pumping unit, a radiator and a fan. According to the laser provided by the utility model, an interior of the laser is divided into two parts through the traverse diaphragm, and on the part side of the pumping unit, namely on one side of the laser with the largest internal caloric power of the laser, the radiator and the fan arranged on the outside of the laser frame body are adopted to carry out heat radiation for the laser, so that the size of the laser is small. Moreover, air cooling replaces water-cooling, mortal faults such as water leakage of a water tank, and poor cooling flow to cause insufficient heat radiation in water cooling are overcome, hence reliability of the system is increased.
Description
Technical field
The utility model relates to a kind of laser.
Background technology
Development high-performance laser to improving China instrumentation Development Level, promote my army's fighting capacity and there is very major and immediate significance.Laser was invented over 50 years, and military requirement leads the development of laser technology always.A laser weight drops to 3 kilograms by 25 kilograms, power consumption declines 5 times, and it is the technology leap across the epoch that all technical also has lifting, originally weight equipment that can only be vehicle-mounted, after weight reducing, can be applied to fighter plane, helicopter, unmanned plane, telecar, even individual soldier carries, and high-performance laser technology has determined the form of future war.
High-performance laser is in the critical period of technology leap at present.High-performance laser pump mode just changes semiconductor pumping sources into by traditional xenon flash lamp pumping source, and efficiency of laser is brought up to 10% left and right by 1-2%, can accomplish that thus frequency is higher, and energy is larger, and volume is less, and weight is lighter.
The above laser of 20Hz is equipped product at present still taking water-cooled as main, is limited to size, weight, applies laser more limited on guided missile, aircraft, even if application also has a lot of restrictions, can bring problems.Therefore the laser guidance laser before is not contained on bullet, on aircraft, only has detector on bullet or on aircraft, taking passive laser guidance with drive and restraint laser guidance as main.The domestic high target of the above laser of 20Hz is 5.5kg, is still in laboratory stage, far can not meet practical application request.Main Bottleneck is thermal design and the highly reliable design under Miniaturization Design, harsh and unforgiving environments.
Utility model content
It is little that the utility model object is to provide a kind of volume, without water-cooled, and the high laser of reliability.
The utility model technical solution problem adopts following technical scheme: a kind of laser, comprises laser framework, laser framework protecgulum, laser framework bonnet, wedge-shaped mirrors, reflecting prism, diaphragm plate, polarizer, Q switching, completely reflecting mirror unit, beam expanding lens, beam expanding lens upper cover, outgoing mirror unit, Nd:YAG crystal, pump unit, radiator and fan;
Described laser framework protecgulum and laser framework bonnet are fixed on described laser framework both sides by screw respectively;
Described laser framework is the cuboid framework being made up of upper side wall, lower wall, front side wall and rear wall, the laser beam transmit direction that the length direction of described cuboid framework is described laser;
Described wedge-shaped mirrors and reflecting prism are all arranged on described rear wall, and described wedge-shaped mirrors is arranged in described laser framework, and described reflecting prism is arranged at outside described laser framework;
Described diaphragm plate is parallel to described laser beam transmit direction and is vertically arranged in described laser framework, and described laser framework is divided into two parts;
Described polarizer and Q switching are arranged on described diaphragm plate, and described completely reflecting mirror unit is arranged on described front side wall, and are positioned at described laser framework; Described polarizer, Q switching, completely reflecting mirror unit and described wedge-shaped mirrors are all positioned at the same side of described diaphragm plate, and on same straight line;
Described beam expanding lens is arranged on described front side wall, and is positioned at outside described laser framework;
Described beam expanding lens upper cover is covered in one end of described beam expanding lens;
Described Nd:YAG crystal and outgoing mirror unit are arranged on described diaphragm plate, and described Nd:YAG crystal and outgoing mirror unit be positioned at the same side of described diaphragm plate, and with described polarizer not in described diaphragm plate the same side;
Described pump unit is arranged on described laser framework bonnet, and is positioned at described laser framework;
Described radiator is arranged on described laser framework bonnet, and is positioned at outside described laser framework;
Described fan is arranged on described radiator.
Optionally, described pump unit comprises diode laser matrix, heating resistor and semiconductor cooler; Described diode laser matrix is fixed on described laser framework bonnet, and described heating resistor and semiconductor cooler are arranged between described diode laser matrix and described laser framework bonnet.
The utlity model has following beneficial effect: laser of the present utility model is divided into two parts by diaphragm plate by the inside of described laser, and in described pump unit component side, it is the larger side of described laser internal heat generation amount, outside radiator and fan that employing is arranged at described laser framework dispel the heat to described laser, make the small volume of described laser, and by the air-cooled water-cooled of having replaced, the radiator leak, the cooling water fluidity that while having overcome water-cooled, have existed be poor always causes the critical failures such as heat radiation is not enough, has improved the reliability of system.
Brief description of the drawings
Fig. 1 is the structural representation of laser of the present utility model;
Fig. 2 is another schematic diagram of structure of laser of the present utility model;
Fig. 3 is the light path schematic diagram of laser of the present utility model;
In figure, mark is illustrated as: 1-laser framework; 2-laser framework protecgulum; 3-laser framework bonnet; 4-wedge-shaped mirrors; 5-reflecting prism; 6-diaphragm plate; 7-polarizer; 8-Q switch; 9-completely reflecting mirror unit; 10-beam expanding lens; 11-beam expanding lens upper cover; 12-outgoing mirror unit; 13-Nd:YAG crystal; 14-pump unit; 15-radiator; 16-fan; 17-diode laser matrix; 18-semiconductor cooler.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the technical solution of the utility model is further elaborated.
Embodiment 1
With reference to figure 1-3, the present embodiment provides a kind of laser, comprises laser framework 1, laser framework protecgulum 2, laser framework bonnet 3, wedge-shaped mirrors 4, reflecting prism 5, diaphragm plate 6, polarizer 7, Q switching 8, completely reflecting mirror unit 9, beam expanding lens 10, beam expanding lens upper cover 11, outgoing mirror unit 12, Nd:YAG crystal 13, pump unit 14, radiator 15 and fan 16;
Described laser framework protecgulum 2 and laser framework bonnet 3 are fixed on described laser framework 1 both sides by screw respectively;
The cuboid framework of described laser framework 1 for being formed by upper side wall, lower wall, front side wall and rear wall, the laser beam transmit direction that the length direction of described cuboid framework is described laser;
Described wedge-shaped mirrors 4 and reflecting prism 5 are all arranged on described rear wall, and described wedge-shaped mirrors 4 is arranged in described laser framework 1, and described reflecting prism 5 is arranged at outside described laser framework 1;
Described diaphragm plate 6 is parallel to described laser beam transmit direction and is vertically arranged in described laser framework 1, and described laser framework 1 is divided into two parts;
Described polarizer 7 and Q switching 8 are arranged on described diaphragm plate 6; Described completely reflecting mirror unit 9 is arranged on described front side wall, and is positioned at described laser framework; Described polarizer 7, Q switching 8, completely reflecting mirror unit 9 and described wedge-shaped mirrors 4 are all positioned at the same side of described diaphragm plate 6, and on same straight line;
Described beam expanding lens 10 is arranged on described front side wall, and is positioned at outside described laser framework 1;
Described beam expanding lens upper cover 11 is arranged at one end of described beam expanding lens 10, with in the time that described beam expanding lens upper cover 11 is covered to the one end at described beam expanding lens 10, closes described beam expanding lens 10; And when described beam expanding lens upper cover 11 is removed from one end of described beam expanding lens 10, open described beam expanding lens 10;
Described Nd:YAG crystal 13 and outgoing mirror unit 12 are arranged on described diaphragm plate 6, and described Nd:YAG crystal 13 and outgoing mirror unit 12 be positioned at the same side of described diaphragm plate 6, and with described polarizer 7 not in described diaphragm plate 6 the same sides;
Described pump unit 14 is arranged on described laser framework bonnet 3, and is positioned at described laser framework 1;
Described radiator 15 is arranged on described laser framework bonnet 3, and is positioned at outside described laser framework 1;
Described fan 16 is arranged on described radiator 15.
Laser of the present utility model is divided into two parts by diaphragm plate 6 by the inside of described laser, and in described pump unit 14 component side, it is the larger side of described laser internal heat generation amount, outside radiator 15 and fan 16 that employing is arranged at described laser framework 1 dispel the heat to described laser, make the small volume of described laser, and by the air-cooled water-cooled of having replaced, the radiator leak, the cooling water fluidity that while having overcome water-cooled, have existed be poor always causes the critical failures such as heat radiation is not enough, has improved the reliability of system.
In the present embodiment, optional, described pump unit comprises diode laser matrix (Laser Diode Array) 17, heating resistor and semiconductor cooler 18; Described diode laser matrix 17 is fixed on described laser framework bonnet 3, described heating resistor and semiconductor cooler 18 are arranged between described diode laser matrix 17 and described laser framework bonnet 3, to realize the light source of described laser by described diode laser matrix, adopt semiconductor pumped mode, make the efficiency of laser bring up to 10% left and right, and the life-span of described diode laser matrix is long, other pump lasers are also solved and need to regularly replace a difficult problem for LASER Light Source; Further, adopt the described semiconductor pumped repetition rate of laser that also makes higher, energy is larger, and volume is less, and weight is lighter; And by adopting described semiconductor cooler, because the volume of described semiconductor cooler is little, lightweight, also make the volume and weight of laser have minimizing, and semiconductor refrigerating has also overcome water-cooled and has had that radiator leak, cooling water fluidity are poor causes the critical failures such as heat radiation is not enough always, and the memory cycle was brought up to more than 5 years from 3-6 month.
The parts such as described completely reflecting mirror unit 9, outgoing mirror unit 12 and reflecting prism 5 form the resonant cavity of laser, between described completely reflecting mirror unit 9 and outgoing mirror unit 12, arrange the reflecting prism of resonant optical path deflection 5, described reflecting prism 5 plays the effect of fold resonator, thereby can dwindle the volume of described laser; Distance between described outgoing mirror unit 12 and reflecting prism 5 is 135mm, and the distance between completely reflecting mirror unit 9 and reflecting prism 5 is 130mm.The overall length of described resonant cavity is 265mm.In described resonant cavity, introduce wedge-shaped mirrors 4, the alignment error between compensation completely reflecting mirror unit 9 and outgoing mirror unit 12.The polarizer 7 and the Q switching 8 that in resonant cavity, arrange, realize electric-optically Q-switched.
The crystal of described Q switching 8 is LiNbO
3crystal, adopts ripe LiNbO
3crystal electric light Q-regulating technique is the key that system realizes.Can ensure that pulsewidth is stable, energy stabilization, and there is decisive action for system effectiveness, beam quality.
Describedly electric-optically Q-switchedly refer to that laser becomes linearly polarized light after polarizer 7.If making alive not on the crystal of Q switching 8, the direction of vibration of linearly polarized light that comes and goes the crystal by Q switching 8 is constant.So in the time having voltage on the crystal of Q switching 8, light beam can not pass through in resonant cavity, resonant cavity is in low Q state.Due to dynamic excitation effect, upper energy level population just increases sharply.In the time that the voltage on the crystal of Q switching 8 is removed suddenly, light beam can freely pass through resonant cavity, and now resonant cavity is in high Q state of value, thereby produces laser pulse.
Described beam expanding lens upper cover 11 plays protection beam expanding lens 10.Beam expanding lens 10 has two purposes: the diameter of first expanded beam; It two is the angles of divergence that reduce laser beam.
The end face of described semiconductor cooler 18 is arranged on described laser framework bonnet 3, and combines by semiconductor refrigerating and air blast cooling, and guarantee pump unit 14 is stably worked, and especially, in the time that hot environment is worked, can provide metastable ambient temperature.
The sequencing of above embodiment only, for ease of describing, does not represent the quality of embodiment.
Finally it should be noted that: above embodiment only, in order to the technical solution of the utility model to be described, is not intended to limit; Although the utility model is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or part technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the spirit and scope of the each embodiment technical scheme of the utility model.
Claims (2)
1. a laser, it is characterized in that, comprise laser framework, laser framework protecgulum, laser framework bonnet, wedge-shaped mirrors, reflecting prism, diaphragm plate, polarizer, Q switching, completely reflecting mirror unit, beam expanding lens, beam expanding lens upper cover, outgoing mirror unit, Nd:YAG crystal, pump unit, radiator and fan;
Described laser framework protecgulum and laser framework bonnet are fixed on described laser framework both sides by screw respectively;
Described laser framework is the cuboid framework being made up of upper side wall, lower wall, front side wall and rear wall, the laser beam transmit direction that the length direction of described cuboid framework is described laser;
Described wedge-shaped mirrors and reflecting prism are all arranged on described rear wall, and described wedge-shaped mirrors is arranged in described laser framework, and described reflecting prism is arranged at outside described laser framework;
Described diaphragm plate is parallel to described laser beam transmit direction and is vertically arranged in described laser framework, and described laser framework is divided into two parts;
Described polarizer and Q switching are arranged on described diaphragm plate, and described completely reflecting mirror unit is arranged on described front side wall, and are positioned at described laser framework; Described polarizer, Q switching, completely reflecting mirror unit and described wedge-shaped mirrors are all positioned at the same side of described diaphragm plate, and on same straight line;
Described beam expanding lens is arranged on described front side wall, and is positioned at outside described laser framework;
Described beam expanding lens upper cover is covered in one end of described beam expanding lens;
Described Nd:YAG crystal and outgoing mirror unit are arranged on described diaphragm plate, and described Nd:YAG crystal and outgoing mirror unit be positioned at the same side of described diaphragm plate, and with described polarizer not in described diaphragm plate the same side;
Described pump unit is arranged on described laser framework bonnet, and is positioned at described laser framework;
Described radiator is arranged on described laser framework bonnet, and is positioned at outside described laser framework;
Described fan is arranged on described radiator.
2. laser according to claim 1, is characterized in that, described pump unit comprises diode laser matrix, heating resistor and semiconductor cooler; Described diode laser matrix is fixed on described laser framework bonnet, and described heating resistor and semiconductor cooler are arranged between described diode laser matrix and described laser framework bonnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420347906.6U CN203911216U (en) | 2014-06-25 | 2014-06-25 | Laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420347906.6U CN203911216U (en) | 2014-06-25 | 2014-06-25 | Laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203911216U true CN203911216U (en) | 2014-10-29 |
Family
ID=51785461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420347906.6U Expired - Lifetime CN203911216U (en) | 2014-06-25 | 2014-06-25 | Laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203911216U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105024266A (en) * | 2015-08-01 | 2015-11-04 | 西南技术物理研究所 | Small constant-temperature air-cooling repetition-rate DPL (Diode Pump Laser) without TEC (ThermoElectric Cooler) |
| CN105024277A (en) * | 2015-08-04 | 2015-11-04 | 北京航空航天大学 | Semiconductor laser and controller integrated miniature structure |
| CN105965156A (en) * | 2016-06-27 | 2016-09-28 | 江苏大金激光科技有限公司 | Light path system of laser cutting machine |
| CN113659419A (en) * | 2021-08-04 | 2021-11-16 | 江苏亮点光电研究有限公司 | Temperature-control-free high-beam-quality electro-optic Q-switched pulse laser |
| CN115037865A (en) * | 2022-08-12 | 2022-09-09 | 北京中科飞鸿科技股份有限公司 | Reconnaissance device with anti-invasion laser striking function |
-
2014
- 2014-06-25 CN CN201420347906.6U patent/CN203911216U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105024266A (en) * | 2015-08-01 | 2015-11-04 | 西南技术物理研究所 | Small constant-temperature air-cooling repetition-rate DPL (Diode Pump Laser) without TEC (ThermoElectric Cooler) |
| CN105024277A (en) * | 2015-08-04 | 2015-11-04 | 北京航空航天大学 | Semiconductor laser and controller integrated miniature structure |
| CN105024277B (en) * | 2015-08-04 | 2018-09-25 | 北京航空航天大学 | A kind of semiconductor laser and controller integral miniaturization structure |
| CN105965156A (en) * | 2016-06-27 | 2016-09-28 | 江苏大金激光科技有限公司 | Light path system of laser cutting machine |
| CN113659419A (en) * | 2021-08-04 | 2021-11-16 | 江苏亮点光电研究有限公司 | Temperature-control-free high-beam-quality electro-optic Q-switched pulse laser |
| CN115037865A (en) * | 2022-08-12 | 2022-09-09 | 北京中科飞鸿科技股份有限公司 | Reconnaissance device with anti-invasion laser striking function |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203911216U (en) | Laser | |
| CN204116999U (en) | Temperature control system of semiconductor laser | |
| CN203951027U (en) | Laser control system and laser | |
| CN105024266A (en) | Small constant-temperature air-cooling repetition-rate DPL (Diode Pump Laser) without TEC (ThermoElectric Cooler) | |
| US8204094B2 (en) | Scalable, efficient laser systems | |
| CN105006732A (en) | Medium and small power LD parallelly pumped high-power green laser | |
| CN105390917A (en) | Compact and stable high-peak-power optical fiber output laser | |
| CN103259176B (en) | High-power full-solid-state pico-second laser device | |
| CN211017728U (en) | High-vibration-resistance surface-pumped high-energy Q-switched laser | |
| CN201853935U (en) | Compact multi-pulse electrooptic Q-switched solid laser | |
| CN205452777U (en) | YAG solid laser of narrow pulse width of output macro -energy | |
| CN208368938U (en) | A kind of Q-switched laser of semiconductor laser pumping | |
| CN110176710B (en) | Power-free laser module | |
| CN206461215U (en) | A kind of air-cooled ultraviolet laser | |
| CN101000996A (en) | Quasi-continuous green laser with double-bar series full solid-state straight cavity high power single-Q switch | |
| CN203260887U (en) | High power all-solid-state picosecond laser | |
| CN113451870B (en) | High-power laser suitable for extreme environment and laser generation method thereof | |
| CN105322429A (en) | Semiconductor laser end plane pumping Er: YSGG electro-optical Q-switched laser | |
| CN201853939U (en) | All-solid-state laser resonant cavity of semiconductor pump | |
| CN202940457U (en) | Seed-injection annular cavity electro-optic modulation Q output single-longitudinal-mode 1053nm system | |
| CN202094473U (en) | Diode pump all-solid-state high-power solid laser device | |
| CN109802288A (en) | The all solid state compact picosecond laser of high power | |
| CN203491503U (en) | Nd:YAG laser | |
| CN202127163U (en) | Novel cavity resonator of laser | |
| CN105281193A (en) | A laser structure capable of effectively compensating for a thermal depolarization effect and outputting 2.79-micron laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141029 |