CN113659419A - Temperature-control-free high-beam-quality electro-optic Q-switched pulse laser - Google Patents
Temperature-control-free high-beam-quality electro-optic Q-switched pulse laser Download PDFInfo
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- CN113659419A CN113659419A CN202110889370.5A CN202110889370A CN113659419A CN 113659419 A CN113659419 A CN 113659419A CN 202110889370 A CN202110889370 A CN 202110889370A CN 113659419 A CN113659419 A CN 113659419A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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Abstract
The invention discloses a temperature control-free high-beam quality electro-optic Q-switched pulse laser, which is characterized in that: the laser comprises a U-shaped resonant cavity consisting of a total reflection mirror, a right-angle prism and an output mirror, as well as an LD pumping module, an Nd, a YAG lath crystal and a Q-switching mechanism which are arranged in the U-shaped resonant cavity, wherein the LD pumping module and the Nd, the YAG lath crystal are arranged between the right-angle prism and the output mirror, and the LD pumping module comprises LD bars with a plurality of different central wavelengths and is used for emitting laser with a plurality of different wavelengths; the end face of the YAG slab crystal is cut according to the Brewster angle, the laser in the LD pumping module and the U-shaped resonant cavity is totally reflected, and linear polarization is kept; the Q-switching mechanism is arranged between the right-angle prism and the total reflection mirror and is used for switching Q of laser in the U-shaped resonant cavity. The invention realizes the temperature control free of the laser, the miniaturization and the light weight of the whole machine and improves the application range.
Description
Technical Field
The invention relates to a laser, in particular to a temperature-control-free high-beam-quality electro-optic Q-switched pulse laser.
Background
In the photoelectric countermeasure system, a laser range finder and a laser camera are indispensable photoelectric equipment, and the laser is one of core devices in the range finder or the camera. The laser generally adopts a solid pulse laser, and a typical technical route is to adopt an LD pump Nd: YAG crystal and output pulse laser with the pulse width within the range of 5 ns-20 ns and the single pulse energy within the range of dozens to hundred milli-joules by combining an active or passive Q-switching mode.
The laser in the current mainstream laser detector is provided with a temperature control system, and the laser is usually composed of a TEC (semiconductor cooling plate), a heat sink and a fan. The laser with temperature control has the inherent advantages that the laser is maintained at a certain temperature, the laser energy stability is good, and the laser is relatively easy to realize in design. However, in some severe applications, such as the onboard miniaturized electro-optical pod, if the overall weight and volume of the electro-optical pod is very strict, such as on the order of 5kg, the weight and volume allocated to the laser camera is limited, and may not exceed 1kg, and the overall power consumption is limited. From a thermal perspective, since the TEC integrated in the laser itself is also a heat generating source, waste heat other than the laser waste heat will be generated, and this heat will remain inside the photovoltaic pod for a certain period of time.
Therefore, the power consumption of the laser TEC with temperature control increases, the size of the entire device increases due to the heat sink, and the requirements of miniaturization, light weight and low power consumption cannot be simultaneously satisfied.
Disclosure of Invention
The invention aims to provide a temperature-control-free high-beam-quality electro-optic Q-switched pulse laser, which realizes temperature control free of a full temperature zone, is highly miniaturized and lightened in weight, and improves the application range by using the structure.
In order to achieve the purpose, the invention adopts the technical scheme that: a temperature-control-free high-beam-quality electro-optical Q-switched pulse laser comprises a U-shaped resonant cavity consisting of a total reflection mirror, a right-angle prism and an output mirror, an LD pumping module, an Nd, a YAG slab crystal and a Q-switched mechanism, wherein the LD pumping module, the Nd, the YAG slab crystal and the Q-switched mechanism are arranged in the U-shaped resonant cavity,
the LD pumping module and the Nd-YAG slab crystal are arranged between the right-angle prism and the output mirror,
the LD pumping module comprises LD bar bars with a plurality of different central wavelengths and is used for emitting laser with a plurality of different wavelengths;
the end face of the YAG slab crystal is cut according to the Brewster angle, the laser in the LD pumping module and the U-shaped resonant cavity is totally reflected, and linear polarization is kept;
the Q-switching mechanism is arranged between the right-angle prism and the total reflection mirror and is used for switching Q of laser in the U-shaped resonant cavity.
In the above technical solution, the LD pump module includes LD bar bars having 5 different center wavelengths.
In the above technical solution, the wavelength range of the laser emitted by the LD pumping module is 780nm to 820 nm.
In the above technical scheme, the U-shaped resonant cavity is a concave-convex unstable cavity.
In the above technical solution, the right-angle prism is disposed at a corner of a U-shaped resonant cavity, the total reflection mirror is disposed at one end of the U-shaped resonant cavity, and the output mirror is disposed at the other end of the U-shaped resonant cavity; the Q-switching mechanism is arranged on a light path between the right-angle prism and the all-reflecting mirror, the Nd: YAG slab crystal is arranged on the light path between the right-angle prism and the output mirror, and the LD pumping module is arranged opposite to the Nd: YAG slab crystal.
In the above technical solution, the Q-switching mechanism includes a Q-switching crystal, a λ/4 wave plate and a polarizer, which are sequentially disposed between the total reflection mirror and the right-angle prism.
In the technical scheme, the total reflection mirror is a plano-concave mirror and is plated with a 1064nm total reflection film; the output mirror is a concave-convex mirror, a 1064nm light splitting film is plated on the convex surface of the output mirror, and a 1064nm antireflection film is plated on the concave surface of the output mirror.
In the above technical scheme, the light splitting film is a super-Gaussian distribution light splitting film.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
1. the LD pumping module adopts LD bars with a plurality of different central wavelengths, and can meet the requirement that the energy of a laser is maintained above a design value within the temperature range of-40-60 ℃;
2. YAG lath crystal, and the end face is cut according to Brewster's angle, the oscillating light is totally reflected in the lath according to the shape of Chinese character ' zhi ', compare with crystal of crystal bar, lath crystal heat effect get essential relief, avoid the temperature control, and avoid causing the problem that the quality of light beam is worsened because of the thermal lens under the high repetition frequency, or the laser optical axis shakes, and because the internal optical path is increased, the laser has obtained the sufficient gain, the optical efficiency can reach more than 20% at most;
3. the invention adopts a U-shaped resonant cavity which is a concave-convex unstable cavity, and the output mirror is plated with a super-Gaussian beam splitting film and an antireflection film, so that the quality of a laser beam is greatly improved compared with that of a conventional pulse laser with the magnitude of 80mJ, and the BPP is not more than 2 mm-mrad.
Drawings
Fig. 1 is a schematic structural diagram in a first embodiment of the present invention.
Wherein: 1. a total reflection mirror; 2. a right-angle prism; 3. an output mirror; 4. an LD pumping module; 5. nd is YAG lath crystal; 6. q-switched crystal; 7. a lambda/4 wave plate; 8. a polarizer; 9. and a U-shaped resonant cavity.
Detailed Description
The invention is further described with reference to the following figures and examples:
the first embodiment is as follows: referring to fig. 1, a temperature-control-free high-beam-quality electro-optic Q-switched pulse laser comprises a U-shaped resonant cavity 9 composed of a total reflection mirror 1, a right-angle prism 2 and an output mirror 3, an LD pumping module 4 arranged in the U-shaped resonant cavity, a Nd-YAG slab crystal 5 and a Q-switching mechanism,
the LD pumping module and the Nd-YAG slab crystal are arranged between the right-angle prism and the output mirror,
the LD pumping module comprises LD bar bars with a plurality of different central wavelengths and is used for emitting laser with a plurality of different wavelengths;
the end face of the YAG slab crystal is cut according to the Brewster angle, the laser in the LD pumping module and the U-shaped resonant cavity is totally reflected, and linear polarization is kept;
the Q-switching mechanism is arranged between the right-angle prism and the total reflection mirror and is used for switching Q of laser in the U-shaped resonant cavity.
In this embodiment, the LD pump module includes LD bar bars with 5 different center wavelengths.
The wavelength range of laser emitted by the LD pumping module is 780 nm-820 nm.
In the embodiment, a plurality of LD bar strips with different central wavelengths are adopted, so that the capacity of the laser can be maintained above a design value within the temperature range of-40 ℃ to 60 ℃, meanwhile, an Nd-YAG (yttrium aluminum garnet) strip crystal is adopted and is a gain medium with a strip structure, the end surface is cut according to the Brewster angle, the oscillating light is totally reflected in the crystal according to a zigzag shape, compared with the crystal of a crystal bar, the heat effect of the strip crystal is essentially relieved, the problems of poor light beam quality or laser optical axis jitter caused by a thermal lens under high repetition frequency are avoided, the heat dissipation effect is good, temperature control is avoided, and due to the fact that the internal optical path is increased, the laser obtains sufficient gain, the light efficiency can reach more than 20% at most, and the light beam quality is good. Moreover, temperature control can be avoided, so that the equipment can be more miniaturized, lighter in weight and wider in application range.
The U-shaped resonant cavity is a concave-convex unstable cavity. Compared with the conventional pulse laser with the magnitude of 80mJ, the beam quality of the laser is improved a lot, the BPP does not exceed 2 mm-mrad, and the beam quality is better.
Referring to fig. 1, the rectangular prism is disposed at a corner of the U-shaped resonant cavity, the total reflection mirror is disposed at one end of the U-shaped resonant cavity, and the output mirror is disposed at the other end of the U-shaped resonant cavity; the Q-switching mechanism is arranged on a light path between the right-angle prism and the all-reflecting mirror, the Nd: YAG slab crystal is arranged on the light path between the right-angle prism and the output mirror, and the LD pumping module is arranged opposite to the Nd: YAG slab crystal.
The total reflection mirror is a plano-concave mirror and is plated with a 1064nm total reflection film; the output mirror is a concave-convex mirror, a 1064nm light splitting film is plated on the convex surface of the output mirror, and a 1064nm antireflection film is plated on the concave surface of the output mirror. The light splitting film is in ultrahigh Gaussian distribution.
In this embodiment, the right-angle prism is cut according to the spatial arrangement in the cavity, and is symmetrically distributed on the central axis of the U-shaped resonant cavity with the same aperture, and the end surface of the right-angle prism is plated with a 1064nm antireflection film. Therefore, the laser can be ensured to be subjected to gain enhancement in the U-shaped resonant cavity, and meanwhile, the ultrahigh-power coating is carried out on the output mirror, so that the quality of the output laser beam is improved.
Referring to fig. 1, the Q-switching mechanism includes a Q-switching crystal 6, a λ/4 wave plate 7 and a polarizer 8 sequentially disposed between the total reflection mirror and the rectangular prism. The polarizer is a Brewster polarizer, the Brewster polarizer and the Brewster polarizer form a Q-switching mechanism together to form a Q-switching photoelectric device, before a high-voltage signal is not loaded on a Q-switching crystal, a low-Q-value high-loss state is presented in the U-shaped resonant cavity, the number of particles in the U-shaped resonant cavity can be stored in a large number of inversed states, after the high-voltage signal is loaded, the high-Q-value low-loss state is instantly presented in the U-shaped resonant cavity, the number of particles at the upper energy level is released instantly, and therefore nanosecond-level pulse laser is output.
Claims (8)
1. The utility model provides a exempt from control by temperature change high beam quality electro-optical Q-switched pulse laser which characterized in that: comprises a U-shaped resonant cavity consisting of a total reflection mirror, a right-angle prism and an output mirror, an LD pumping module, an Nd-YAG lath crystal and a Q-adjusting mechanism which are arranged in the U-shaped resonant cavity,
the LD pumping module and the Nd-YAG slab crystal are arranged between the right-angle prism and the output mirror,
the LD pumping module comprises LD bar bars with a plurality of different central wavelengths and is used for emitting laser with a plurality of different wavelengths;
the end face of the YAG slab crystal is cut according to the Brewster angle, the laser in the LD pumping module and the U-shaped resonant cavity is totally reflected, and linear polarization is kept;
the Q-switching mechanism is arranged between the right-angle prism and the total reflection mirror and is used for switching Q of laser in the U-shaped resonant cavity.
2. The temperature-control-free high-beam-quality electro-optic Q-switched pulse laser of claim 1, wherein: the LD pumping module comprises LD bar bars with 5 different center wavelengths.
3. The temperature-control-free high-beam-quality electro-optic Q-switched pulse laser of claim 1, wherein: the wavelength range of laser emitted by the LD pumping module is 780 nm-820 nm.
4. The temperature-control-free high-beam-quality electro-optic Q-switched pulse laser of claim 1, wherein: the U-shaped resonant cavity is a concave-convex unstable cavity.
5. The temperature-control-free high-beam-quality electro-optic Q-switched pulse laser of claim 1, wherein: the right-angle prism is arranged at the corner of the U-shaped resonant cavity, the total reflection mirror is arranged at one end of the U-shaped resonant cavity, and the output mirror is arranged at the other end of the U-shaped resonant cavity; the Q-switching mechanism is arranged on a light path between the right-angle prism and the all-reflecting mirror, the Nd: YAG slab crystal is arranged on the light path between the right-angle prism and the output mirror, and the LD pumping module is arranged opposite to the Nd: YAG slab crystal.
6. The temperature-control-free high-beam-quality electro-optic Q-switched pulse laser of claim 1, wherein: the Q-switching mechanism comprises a Q-switching crystal, a lambda/4 wave plate and a polarizer which are sequentially arranged between the total reflection mirror and the right-angle prism.
7. The temperature-control-free high-beam-quality electro-optic Q-switched pulse laser of claim 1, wherein: the total reflection mirror is a plano-concave mirror and is plated with a 1064nm total reflection film; the output mirror is a concave-convex mirror, a 1064nm light splitting film is plated on the convex surface of the output mirror, and a 1064nm antireflection film is plated on the concave surface of the output mirror.
8. The temperature-control-free high-beam-quality electro-optic Q-switched pulse laser of claim 7, wherein: the light splitting film is in ultrahigh Gaussian distribution.
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| CN202110889370.5A CN113659419A (en) | 2021-08-04 | 2021-08-04 | Temperature-control-free high-beam-quality electro-optic Q-switched pulse laser |
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| CN202110889370.5A CN113659419A (en) | 2021-08-04 | 2021-08-04 | Temperature-control-free high-beam-quality electro-optic Q-switched pulse laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115313129A (en) * | 2022-10-11 | 2022-11-08 | 北京中星时代科技有限公司 | LD end pump pulse solid laser |
| CN117277043A (en) * | 2023-11-17 | 2023-12-22 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooled laser based on right-angle prism cavity and output method |
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| CN2872683Y (en) * | 2006-03-21 | 2007-02-21 | 吴砺 | Semiconductor pump laser in range of wide temperature |
| CN201110900Y (en) * | 2007-09-21 | 2008-09-03 | 中国科学院上海光学精密机械研究所 | Coating device of gradient reflectivity mirror |
| CN203911216U (en) * | 2014-06-25 | 2014-10-29 | 北京国科欣翼科技有限公司 | Laser |
| CN105024266A (en) * | 2015-08-01 | 2015-11-04 | 西南技术物理研究所 | Small constant-temperature air-cooling repetition-rate DPL (Diode Pump Laser) without TEC (ThermoElectric Cooler) |
| CN105591267A (en) * | 2016-03-22 | 2016-05-18 | 中国人民解放军武汉军械士官学校 | Multi-wavelength pumped temperature control-free solid-state laser and multi-wavelength selection method |
| CN111525378A (en) * | 2020-03-20 | 2020-08-11 | 北京国泰蓝盾科技有限公司 | A miniaturized passive Q laser that transfers for airborne laser illumination ware |
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2021
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2872683Y (en) * | 2006-03-21 | 2007-02-21 | 吴砺 | Semiconductor pump laser in range of wide temperature |
| CN201110900Y (en) * | 2007-09-21 | 2008-09-03 | 中国科学院上海光学精密机械研究所 | Coating device of gradient reflectivity mirror |
| CN203911216U (en) * | 2014-06-25 | 2014-10-29 | 北京国科欣翼科技有限公司 | Laser |
| CN105024266A (en) * | 2015-08-01 | 2015-11-04 | 西南技术物理研究所 | Small constant-temperature air-cooling repetition-rate DPL (Diode Pump Laser) without TEC (ThermoElectric Cooler) |
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| CN111525378A (en) * | 2020-03-20 | 2020-08-11 | 北京国泰蓝盾科技有限公司 | A miniaturized passive Q laser that transfers for airborne laser illumination ware |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115313129A (en) * | 2022-10-11 | 2022-11-08 | 北京中星时代科技有限公司 | LD end pump pulse solid laser |
| CN115313129B (en) * | 2022-10-11 | 2023-02-21 | 北京中星时代科技有限公司 | LD end pump pulse solid laser |
| CN117277043A (en) * | 2023-11-17 | 2023-12-22 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooled laser based on right-angle prism cavity and output method |
| CN117277043B (en) * | 2023-11-17 | 2024-06-07 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooled laser based on right-angle prism cavity and output method |
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