CN203910865U - 一种中小功率的led散热结构 - Google Patents

一种中小功率的led散热结构 Download PDF

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CN203910865U
CN203910865U CN201420323376.1U CN201420323376U CN203910865U CN 203910865 U CN203910865 U CN 203910865U CN 201420323376 U CN201420323376 U CN 201420323376U CN 203910865 U CN203910865 U CN 203910865U
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heat sink
metallic reflector
emc
led
support
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郑剑飞
高春瑞
施高伟
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Xiamen Dacol Photoelectronics Technology Co Ltd
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Xiamen Dacol Photoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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Abstract

本实用新型公开一种中小功率的LED散热结构，一种中小功率的LED散热结构，包括支架，支架上在位于金属的固晶位置和焊线的位置处设有热沉，热沉之上设有用于固定LED芯片位置的金属反射层，热沉被EMC隔层分隔为放置芯片的大焊盘和非放置芯片的小焊盘，LED芯片设于金属反射层上；EMC隔层贯穿支架而设置，金属反射层和热沉的结构相配合。EMC隔层为配合支架中间的塑胶料，用以将大焊盘和小焊盘隔开，具有与所述LED芯片底部相结合的固定部分。热沉位于金属的固晶位置和焊线的位置，具有与所述LED芯片底部对应的所述金属反射层相配合的下底面。

Description

一种中小功率的LED散热结构
技术领域
本实用新型涉及LED照明领域，具体涉及一种中小功率LED灯具的的散热结构。
背景技术
贴片LED光源在照明领域具有广泛的应用，考虑到生产工艺、成本、光学性能等技术要求，越来越多的设计采用贴片封装方式的LED光源，EMC封装结构是近年来为了降低成本和提高光通量，而采取的一种封装方式。
EMC封装同其他所有封装方式的LED光源同样，都需要解决光效、可靠性和成本三者的问题：光效是光通量与其消耗特定电能功率的比值；可靠性往往由光源散热性能决定；而成本主要体现在原材料选择方面，此三者发生相互制衡。在不同的需求下可能需要突出某方面的优化效果。增加镀银层的厚度（传统的镀银层厚度为60-100mil），可以有效的提高LED芯片的取光效率。比如，在成本和可靠性保持的情况下，实现高光通量，这样的议题在大量LED光源生产中显得尤其重要。作为商品，实现其成本下的性能控制，是一种必然的诉求。所以，如何在维持较好的成本和可靠性的同时，采用LED光源实现高光通量，是这类贴片LED封装结构设计的一个必然需求。
目前市场上EMC的封装方式都在大功率方面的散热有所欠缺，要么成本过高，要么散热性能不够好，本实用新型正是针对该问题进行探讨，提出一种较低的成本即可实现较好的散热性能的散热模块。
实用新型内容
因此，针对上述的问题，本实用新型提出一种中小功率的LED散热结构，采用减薄热沉厚度，提高支架散热能力，并通过增加U型金属反射层，提高出光效率，从而提高贴片LED的可靠性，进而达到降低成本的目的，并有效的提高芯片的使用电流，提高光通量。
为了解决上述技术问题，本实用新型所采用的技术方案是，一种中小功率的LED散热结构，包括支架，支架上在位于金属的固晶位置和焊线的位置处设有热沉，热沉之上设有用于固定LED芯片位置的金属反射层，热沉被EMC隔层分隔为放置芯片的大焊盘和非放置芯片的小焊盘，LED芯片设于金属反射层上；EMC隔层贯穿支架而设置，金属反射层和热沉的结构相配合。EMC隔层为配合支架中间的塑胶料，用以将大焊盘和小焊盘隔开，具有与所述LED芯片底部相结合的固定部分。热沉位于金属的固晶位置和焊线的位置，具有与所述LED芯片底部对应的所述金属反射层相配合的下底面。
进一步的，所述热沉设计为U型结构，金属反射层设于热沉之上，该金属反射层也设计为U型金属反射层。这样，热沉设计为U型结构以及金属反射层也设计为U型结构，使得支架上的两个侧面均设有金属反射层，充分将LED芯片的光反射出去，提高了整个封装的出光效率,比传统的PPA、PCT耐温更高。
进一步的，所述金属反射层的厚度范围为120㏕-150㏕，用于固定LED芯片位置的确定，具有与LED芯片底部相结合的固定部分。
进一步的，所述金属反射层选用镜面亮银制成的金属反射层，使LED芯片光线充分反射，提高了整个封装的光效。
进一步的，所述EMC隔层的高度为0.08-0.10MM。
进一步的，所述热沉为金属热沉，该金属热沉厚度为0.04-0.06MM。
另外，热沉的减薄，以及增加的U型金属反射层，有效的提高LED芯片的散热能力，进而提升了LED封装的可靠性。本实用新型的上述封装结构可以将LED的直通电流提高到90ma，从而达到了低成本，小尺寸，高光通量，高稳定性的LED封装效果。
本实用新型采用上述结构，具有如下优点：1、通过镜面金属反射层，将源自LED芯片光线充分反射，增大镀层厚度，提高了整个封装的取光效，增加了镀层的稳定性；2、U型的金属反射层能够更好的增加芯片侧面的取光效率。实现了高光通量、高可靠性LED封装的技术优化；3、U型的热沉结构将有效的增加了支架的稳定性。进一步提升可靠性；4、EMC塑料隔层将LED芯片出光效率；5、热沉的减薄可以提高LED芯片散热性，提高取光效率，进而达到降低成本的目的。
附图说明
图1为本实用新型的LED散热结构的俯视图；
图2为本实用新型的LED散热结构的剖视图；
图3为本实用新型的LED散热结构的支架示意图。
具体实施方式
现结合附图和具体实施方式对本实用新型进一步说明。
作为一个具体的实例，参加图1-图3，一种中小功率的LED散热结构，支架1，支架1上在位于金属的固晶位置和焊线的位置处设有热沉2，热沉2之上设有用于固定LED芯片4位置的金属反射层3，热沉2被EMC隔层5分隔为放置芯片的大焊盘22和非放置芯片的小焊盘21，LED芯片4设于金属反射层3上；EMC隔层5贯穿支架1而设置；金属反射层3与热沉2的结构相配合。EMC隔层5为配合支架1中间的塑胶料，用以将大焊盘22和小焊盘21隔开，具有与所述的大小焊盘结合的固定部分。
配合支架1中间的塑胶料为EMC隔层5，且EMC隔层5贯穿支架1内部，除了支架内部的热沉2和金属反射层3材料外，支架1内部所有材料均用EMC高耐温塑料。EMC隔层5的高度为0.08-0.10MM。
热沉2位于金属的固晶位置和焊线的位置，具有与所述LED芯片4底部对应的所述金属反射层3相配合的下底面。本实施例中，热沉2为金属热沉，该金属热沉厚度为0.04-0.06MM，位于金属的固晶位置和焊线的位置，具有与所述LED芯片4底部对应的所述金属反射层3相配合的下底面。所述热沉2设计为U型结构，金属反射层设于热沉之上，该金属反射层3也设计为U型金属反射层。这样，热沉设计为U型结构以及金属反射层也设计为U型结构，使得支架上的两个侧面均设有金属反射层，充分将LED芯片的光反射出去，提高了整个封装的出光效率,比传统的PPA、PCT耐温更高。同时，该热沉2的结构被分为用于放置LED芯片4的大焊盘22（固晶位置）和非放置芯片的小焊盘21（焊线位置），大焊盘22的面积大于小焊盘21面积的3倍。
其中，所述金属反射层3为镜面亮银，金属反射层3厚度为120-150㏕，用于固定LED芯片4位置的确定。
其中，LED芯片4的最大宽度为0.55mm。采用本实用新型的结构，可将LED的直通电流提高到90ma。
尽管结合优选实施方案具体展示和介绍了本实用新型，但所属领域的技术人员应该明白，在不脱离所附权利要求书所限定的本实用新型的精神和范围内，在形式上和细节上可以对本实用新型做出各种变化，均为本实用新型的保护范围。 

Claims (6)

1.一种中小功率的LED散热结构，其特征在于：包括支架，支架上在位于金属的固晶位置和焊线的位置处设有热沉，热沉之上设有用于固定LED芯片位置的金属反射层，热沉被EMC隔层分隔为放置芯片的大焊盘和非放置芯片的小焊盘，LED芯片设于金属反射层上；
EMC隔层贯穿支架而设置，金属反射层和热沉的结构相配合。
2.根据权利要求1所述的LED散热结构，其特征在于：所述热沉设计为U型结构，金属反射层设于热沉之上，该金属反射层也设计为U型结构。
3.根据权利要求1所述的LED散热结构，其特征在于：所述金属反射层的厚度范围为120㏕-150㏕。
4.根据权利要求1或2或3所述的LED散热结构，其特征在于：所述金属反射层选用镜面亮银制成的金属反射层。
5.根据权利要求1所述的LED散热结构，其特征在于：所述EMC隔层的高度为0.08-0.10MM。
6.根据权利要求1所述的LED散热结构，其特征在于：所述热沉为金属热沉，该金属热沉厚度为0.04-0.06MM。
CN201420323376.1U 2014-06-18 2014-06-18 一种中小功率的led散热结构 Expired - Fee Related CN203910865U (zh)

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