CN203859113U - High-voltage diode for microwave oven - Google Patents
High-voltage diode for microwave oven Download PDFInfo
- Publication number
- CN203859113U CN203859113U CN201420186599.8U CN201420186599U CN203859113U CN 203859113 U CN203859113 U CN 203859113U CN 201420186599 U CN201420186599 U CN 201420186599U CN 203859113 U CN203859113 U CN 203859113U
- Authority
- CN
- China
- Prior art keywords
- wafer
- circuit board
- voltage diode
- microwave oven
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 235000012431 wafers Nutrition 0.000 claims abstract description 70
- 239000000919 ceramic Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 239000000084 colloidal system Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Control Of High-Frequency Heating Circuits (AREA)
Abstract
The utility model discloses a high-voltage diode for a microwave oven. The high-voltage diode comprises a circuit board, two leading-out wires and multiple wafers, wherein the wafers are fixed on the circuit board, a gap exists between every two adjacent wafers, the adjacent wafers are connected via a lead or a line on the circuit board, and all the wafers are connected in series via the leads and lines. According to the utility model, the problem in heat radiation of the wafers is solved, the consistency of the wafers is improved, the processing technology is optimized, the product reliability is improved, and the cost is correspondingly reduced.
Description
[technical field]
The utility model relates to microwave oven variable frequency power supply, relates in particular to the high-voltage diode that a kind of microwave oven variable frequency power supply is used.
[background technology]
Existing microwave oven variable frequency power supply has adopted high-frequency electronic transformer to replace traditional Industrial Frequency Transformer, has that efficiency is high, good reliability, operating voltage is wide, volume is little, the feature such as lightweight.In variable frequency power supply, conventionally need use 2 8KV high pressure fast recovery diodes, the high pressure fast recovery diode of existing 8KV is in series by the diode wafer of 8-10 single 1KV.As shown in Figure 1, high-voltage diode adopts 8 wafer stitch welding together, and two termination lead-out wires, form a complete high-voltage diode after plastic packaging.In Fig. 1,1 is element lead-out wire, and 2 is wafer, and 3 is plastic-sealed body, and 4 is weld layer.High-voltage diode shown in Fig. 1, all diode wafers stack, and during work, accumulation of heat is serious, temperature rise, caused the not high problem of reliability, microwave oven variable frequency power supply works under the high frequency frequency of tens of KHz, very high to the coherence request of all series diode wafers; The high-voltage diode production technology that existing frequency-conversion microwave oven is used is after first 8-10 silicon chip being welded together, cut again, form the series connection of 8-10 diode wafer, welding lead plastic packaging forms again, otherness while producing due to 8-10 piece silicon chip, can cause the parameter of each single wafer inconsistent, during work, every wafer is born withstand voltagely has a bigger difference, reduced reliability, and, while finding in production that any wafer in 8-10 wafer is defective, 8-10 the wafer that whole welding is good need all be scrapped.
The high-voltage diode production technology percent defective that existing frequency-conversion microwave oven is used is high, complex process, and cost is corresponding increase also.
[summary of the invention]
The technical problems to be solved in the utility model is to provide the high-voltage diode that a kind of rate of finished products is high, cost is low, the good microwave oven that dispels the heat is used.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is, a kind of microwave oven high-voltage diode, comprise circuit board, two lead-out wires and a plurality of wafer, described wafer is fixed on circuit board, between adjacent wafer, leave space, adjacent wafer compartment of terrain is realized whole wafers by the connection on lead-in wire or circuit board and is connected.
Above-described microwave oven high-voltage diode, the staggered opposed alignment of described wafer PN junction, one connected of two wafer are the connection on P knot and circuit board, another is the connection on N knot and circuit board.
Above-described microwave oven high-voltage diode, one end of lead-out wire is fixed on circuit board, and two lead-out wires are electrically connected to the wafer that is positioned at circuit board two ends by the circuit of circuit board respectively.
Above-described microwave oven high-voltage diode, described circuit board is ceramic substrate.
Above-described microwave oven high-voltage diode, comprises plastic packaging colloid, and circuit board, wafer and lead packages are in plastic packaging colloid.
The utility model microwave oven has solved wafer heat dissipation problem with high-voltage diode, has improved the consistency between each wafer, has optimized processing technology, and product reliability is improved, and cost is corresponding reduction also.
[accompanying drawing explanation]
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Fig. 1 is the structural representation of prior art high-voltage diode.
Fig. 2 is the structural representation of the utility model embodiment 1 high-voltage diode.
Fig. 3 is the structural representation of the utility model embodiment 2 high-voltage diodes.
[embodiment]
As shown in Figure 2,8 wafers 1 are fixed on ceramic substrate 2 structure of the utility model embodiment 1 microwave oven use high-voltage diode, form a line dispersedly, between adjacent wafer, leave space.Whole wafers 1 are divided into 4 groups, and every two wafers 1 are one group, and the top of two wafers 1 of same group is connected with lead-in wire 3; The bottom of two contiguous wafers 1 does not utilize the copper cash 201 on ceramic substrate 2 to be electrically connected on the same group, by go between 3 and copper cash 201 all wafers are together in series.One end of lead-out wire 4 is welded on ceramic substrate 2, and is electrically connected to the wafer 1 of end by the copper cash 201 on ceramic substrate 2.The assembly of wafer 1, ceramic substrate 2 and lead-in wire 3 is encapsulated in a complete high-voltage diode of 5 formation in plastic packaging colloid.Realized the staggered opposed alignment of PN junction of above-mentioned wafer, one of two wafer being connected with lead-in wire are the connection on P knot and circuit board, another for N tie and circuit board on connection.
As shown in Figure 3,10 wafers 1 are fixed on ceramic substrate 2 structure of the utility model embodiment 2 microwave ovens use high-voltage diodes, are divided into two row.The wafer of the connection on P knot and circuit board is arranged in row, and the wafer of the connection on N knot and circuit board is arranged in another row.
In the same manner as in Example 1,10 wafers 1 of the present embodiment are divided into 5 groups, and two wafers that different lines is adjacent are one group, and the top of two wafers 1 of same group is connected with lead-in wire 3; The bottom of two contiguous wafers 1 does not utilize the copper cash 201 on ceramic substrate 2 to be electrically connected on the same group.Like this, by go between 3 and copper cash 201 all wafers are together in series.One end of lead-out wire 4 is welded on ceramic substrate 2, and is electrically connected to the wafer 1 of end by the copper cash 201 on ceramic substrate 2.The assembly of wafer 1, ceramic substrate 2 and lead-in wire 3 is encapsulated in a complete high-voltage diode of 5 formation in plastic packaging colloid.
Spacing between the adjacent wafer of the above embodiment of the utility model is large, is conducive to wafer heat radiation; Wafer is fixed on ceramic substrate, can also dispel the heat by ceramic substrate; The wafer that whole wafers of high-voltage diode can adopt the cutting of same silicon chip to form, has reduced the difference between each wafer, and the parameter of each wafer is consistent, and the withstand voltage difference that during work, every wafer is born is little, has improved the reliability of high-voltage diode,
Due to the utility model, above embodiment has solved wafer heat dissipation problem, has improved the consistency between each wafer, has optimized processing technology, and product reliability is improved, and cost is corresponding reduction also.
Claims (5)
1. a microwave oven high-voltage diode, comprise two lead-out wires and a plurality of wafer, described wafer series connection, it is characterized in that, comprise circuit board, described wafer is fixed on circuit board, between adjacent wafer, leaves space, and adjacent wafer compartment of terrain is realized whole wafers by the connection on lead-in wire or circuit board and connected.
2. microwave oven high-voltage diode according to claim 1, is characterized in that, the staggered opposed alignment of described wafer PN junction, and one connected of two wafer are the connection on P knot and circuit board, another is the connection on N knot and circuit board.
3. microwave oven high-voltage diode according to claim 1, is characterized in that, one end of lead-out wire is fixed on circuit board, and two lead-out wires are electrically connected to the wafer that is positioned at circuit board two ends by the circuit of circuit board respectively.
4. microwave oven high-voltage diode according to claim 1, is characterized in that, described circuit board is ceramic substrate.
5. microwave oven high-voltage diode according to claim 1, is characterized in that, comprises plastic packaging colloid, and circuit board, wafer and lead packages are in plastic packaging colloid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420186599.8U CN203859113U (en) | 2014-04-17 | 2014-04-17 | High-voltage diode for microwave oven |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420186599.8U CN203859113U (en) | 2014-04-17 | 2014-04-17 | High-voltage diode for microwave oven |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203859113U true CN203859113U (en) | 2014-10-01 |
Family
ID=51608954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420186599.8U Expired - Fee Related CN203859113U (en) | 2014-04-17 | 2014-04-17 | High-voltage diode for microwave oven |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203859113U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816647A (en) * | 2020-07-24 | 2020-10-23 | 西安卫光科技有限公司 | Plastic package high-voltage silicon stack |
-
2014
- 2014-04-17 CN CN201420186599.8U patent/CN203859113U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816647A (en) * | 2020-07-24 | 2020-10-23 | 西安卫光科技有限公司 | Plastic package high-voltage silicon stack |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141001 |