CN210052740U - IGBT module with low inductance and high current sharing - Google Patents
IGBT module with low inductance and high current sharing Download PDFInfo
- Publication number
- CN210052740U CN210052740U CN201921017010.0U CN201921017010U CN210052740U CN 210052740 U CN210052740 U CN 210052740U CN 201921017010 U CN201921017010 U CN 201921017010U CN 210052740 U CN210052740 U CN 210052740U
- Authority
- CN
- China
- Prior art keywords
- copper
- clad plate
- ceramic copper
- ceramic
- igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Power Conversion In General (AREA)
Abstract
The utility model discloses a low inductance and high flow equalization IGBT module, which comprises a heat radiation copper plate, a ceramic copper-clad plate arranged on the heat radiation copper plate, an even number group IGBT chip and a diode attached on the ceramic copper-clad plate, wherein the ceramic copper-clad plate is composed of a first ceramic copper-clad plate and a second ceramic copper-clad plate which are symmetrically distributed; the first ceramic copper-clad plate and the second ceramic copper-clad plate are separated by a plurality of mutually independent copper layers, each group of IGBT chips and diodes are distributed on the same copper layer, and each group of IGBT chips and diodes are indirectly bonded through the copper layers adjacent to the IGBT chips and the diodes. The ceramic copper-clad plates are separately and symmetrically designed, so that the inductance of the power semiconductor module can be reduced, and the current-sharing property of the chip of the power semiconductor module in practical application is improved; the indirect bonding structure of the IGBT chip and the diode takes the ceramic copper clad plate as a current-carrying medium, so that the mutual inductance between bonding wires is reduced, the resistance and the inductance of the power semiconductor module are reduced, and the service life of the power semiconductor module is prolonged.
Description
Technical Field
The utility model belongs to the technical field of power semiconductor device technique and specifically relates to a IGBT module that low inductance height flow equalizes.
Background
The power semiconductor module is a high-power device and is widely applied to the fields of motor control, power inverters and the like. At present, the current passing through the IGBT chip is limited by the material and size of the IGBT chip and is not more than 200A, while in practical application, the required current is often much more than 200A, and a plurality of IGBT chips are usually combined in parallel to meet the use requirement of a high-current power device.
Different chip combinations create layout structures with different forms, in the control process of each IGBT chip, due to the difference of the layout structure design, the passing current of the IGBT chip is enabled to generate difference, and in the high-frequency switching-on and switching-off process, the chip is easy to generate serious current unbalance, so that the power semiconductor module is damaged.
SUMMERY OF THE UTILITY MODEL
To the problem, the utility model provides a IGBT module that low inductance height flow equalizes.
A low-inductance high-current-sharing IGBT module comprises a heat-radiating copper plate, a ceramic copper-clad plate arranged on the heat-radiating copper plate, and even-numbered groups of IGBT chips and diodes attached to the ceramic copper-clad plate, wherein the ceramic copper-clad plate is composed of a first ceramic copper-clad plate and a second ceramic copper-clad plate which are symmetrically distributed, a certain interval is formed between the first ceramic copper-clad plate and the second ceramic copper-clad plate, and the first ceramic copper-clad plate and the second ceramic copper-clad plate are bonded through;
the first ceramic copper-clad plate and the second ceramic copper-clad plate are separated by a plurality of mutually independent copper layers, each group of IGBT chips and diodes are distributed on the same copper layer, and each group of IGBT chips and diodes are indirectly bonded through the copper layers adjacent to the IGBT chips and diodes.
Furthermore, the first ceramic copper-clad plate and the second ceramic copper-clad plate are indirectly bonded through an adjacent copper layer.
Furthermore, the even number of groups of IGBT chips and diodes which are attached to the ceramic copper-clad plate are integrally distributed in a centrosymmetric manner.
Furthermore, the gate and the emitter of the IGBT chip are connected with an external signal terminal in a bonding mode through copper layers.
The utility model has the advantages that: the ceramic copper-clad plates are separately and symmetrically designed, so that the inductance of the power semiconductor module can be reduced, the current-sharing performance of a chip in practical application of the power semiconductor module is improved, and the reliability of module application is improved; the indirect bonding structure between the IGBT chip and the diode and the indirect bonding structure between the IGBT chip and the external signal terminal take the ceramic copper-clad plate as a current-carrying medium, so that the mutual inductance between bonding wires is reduced, the resistance and the inductance of the power semiconductor module are reduced, and the service life of the power semiconductor module is prolonged.
Drawings
Fig. 1 is a diagram of IGBT module bonding wire arrangement;
fig. 2 is an IGBT module chip layout diagram.
Description of the reference numerals
1. A heat-dissipating copper plate; 201. a first ceramic copper-clad plate; 202. a second ceramic copper-clad plate; 3. an IGBT chip; 4. a diode; 5. and an external signal terminal.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Example 1
A low-inductance high-current-sharing IGBT module is shown in figures 1 and 2 and comprises a heat-radiating copper plate 1, a ceramic copper-clad plate arranged on the heat-radiating copper plate, four groups of IGBT chips 3 and diodes 4 attached to the ceramic copper-clad plate, wherein the ceramic copper-clad plate is composed of a first ceramic copper-clad plate 201 and a second ceramic copper-clad plate 202 which are symmetrically distributed, a certain interval is formed between the first ceramic copper-clad plate and the second ceramic copper-clad plate, and the first ceramic copper-clad plate and the second ceramic copper-clad plate are bonded through aluminum wires.
In this embodiment, the first and second ceramic copper clad plates have a length of 52mm and a width of 37.9 mm. The ceramic copper-clad plates are separately and symmetrically designed, so that the inductance of the power semiconductor module can be reduced, the current-sharing performance of the chip in practical application of the power semiconductor module is improved, and the reliability of module application is improved.
The four groups of IGBT chips and diodes which are pasted on the ceramic copper-clad plate are integrally distributed in a central symmetry manner, namely the first ceramic copper-clad plate and the second ceramic copper-clad plate are respectively distributed in two groups, and the two groups of IGBT chips and the diodes are also symmetrically distributed on the first ceramic copper-clad plate and the second ceramic copper-clad plate, so that the flow uniformity of the chips is further improved, and the reliability of module application is further improved.
A plurality of mutually independent copper layers are separated on the first ceramic copper-clad plate and the second ceramic copper-clad plate, each group of IGBT chips and diodes are distributed on the same copper layer, and each group of IGBT chips and diodes are indirectly bonded through the copper layer adjacent to the IGBT chips and diodes; the first ceramic copper-clad plate and the second ceramic copper-clad plate are indirectly bonded through adjacent copper layers. The copper layers mentioned here are not the same copper layer, and the number and distribution positions of the individual copper layers are determined by the internal connection structure of the IGBT module, which can be specifically set by those skilled in the art according to the needs, and fig. 2 shows only one distribution structure of the individual copper layers.
The gate and the emitter of the IGBT chip are connected with an external signal terminal 5 in a bonding mode through copper layers. The indirect bonding structure between the IGBT chip and the diode and the indirect bonding structure between the IGBT chip and the external signal terminal take the ceramic copper-clad plate as a current-carrying medium, so that the mutual inductance between bonding wires is reduced, the resistance and the inductance of the power semiconductor module are reduced, and the service life of the power semiconductor module is prolonged.
It is obvious that the described embodiments are only some of the embodiments of the present invention, and not all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by a person of ordinary skill in the art and related fields without creative efforts shall fall within the protection scope of the present disclosure.
Claims (4)
1. A low-inductance high-current-sharing IGBT module comprises a heat-radiating copper plate, a ceramic copper-clad plate arranged on the heat-radiating copper plate, and even-numbered groups of IGBT chips and diodes attached to the ceramic copper-clad plate, and is characterized in that the ceramic copper-clad plate is composed of a first ceramic copper-clad plate and a second ceramic copper-clad plate which are symmetrically distributed, a certain interval is formed between the first ceramic copper-clad plate and the second ceramic copper-clad plate, and the first ceramic copper-clad plate and the second ceramic copper-clad plate are bonded through;
the first ceramic copper-clad plate and the second ceramic copper-clad plate are separated by a plurality of mutually independent copper layers, each group of IGBT chips and diodes are distributed on the same copper layer, and each group of IGBT chips and diodes are indirectly bonded through the copper layers adjacent to the IGBT chips and diodes.
2. The IGBT module of low inductance high current sharing according to claim 1, characterized in that the first and second ceramic copper clad laminate are indirectly bonded by adjacent copper layers.
3. The IGBT module with low inductance and high current sharing according to claim 2, wherein even number of groups of IGBT chips and diodes attached to the ceramic copper-clad plate are distributed in central symmetry as a whole.
4. A low inductance high current sharing IGBT module according to any one of claims 1-3, characterized in that the IGBT chip gate and emitter are bonded to external signal terminals through copper layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921017010.0U CN210052740U (en) | 2019-07-02 | 2019-07-02 | IGBT module with low inductance and high current sharing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921017010.0U CN210052740U (en) | 2019-07-02 | 2019-07-02 | IGBT module with low inductance and high current sharing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210052740U true CN210052740U (en) | 2020-02-11 |
Family
ID=69398067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921017010.0U Active CN210052740U (en) | 2019-07-02 | 2019-07-02 | IGBT module with low inductance and high current sharing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210052740U (en) |
-
2019
- 2019-07-02 CN CN201921017010.0U patent/CN210052740U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10079552B2 (en) | Power conversion device | |
| JP6836201B2 (en) | Power converter | |
| US12046584B2 (en) | Semiconductor module | |
| WO2016129097A1 (en) | Half-bridge power semiconductor module, and method for manufacturing same | |
| CN111554645B (en) | Double-sided water-cooling SiC half-bridge module packaging structure integrated with laminated busbar | |
| US6384492B1 (en) | Power semiconductor packaging | |
| US11532557B2 (en) | Planar power module with spatially interleaved structure | |
| US20210407875A1 (en) | Semiconductor device | |
| JP2015018943A (en) | Power semiconductor module and power conversion device using the same | |
| WO2020215737A1 (en) | Power device packaging structure and method therefor | |
| CN113875006A (en) | Three-level power module | |
| JP2015225918A (en) | Semiconductor module and semiconductor switch | |
| US11482486B2 (en) | Low-impedance bus assemblies and apparatus including the same | |
| WO2016199352A1 (en) | Semiconductor device | |
| CN208861980U (en) | Power module assembly, power semiconductor modular and vehicle | |
| CN101320938B (en) | Multi-use power module | |
| US11895775B2 (en) | Modular power electronics converters with enhanced connectivity reliability and simplified method of fabrication | |
| CN210052740U (en) | IGBT module with low inductance and high current sharing | |
| CN112701111A (en) | Three-level circuit silicon carbide power module | |
| US9105489B2 (en) | Power semiconductor module | |
| JP5429413B2 (en) | Semiconductor device | |
| US9515012B2 (en) | Package of power dies and three-phase power converter | |
| JP4697025B2 (en) | Power semiconductor module | |
| CN111524877B (en) | Double-sided heat dissipation power module | |
| CN114267649A (en) | Double-sided heat dissipation SiC half-bridge module packaging structure with extremely low parasitic inductance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |